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DE69128334D1 - Integrierte Schaltung und Verfahren zu deren Herstellung - Google Patents

Integrierte Schaltung und Verfahren zu deren Herstellung

Info

Publication number
DE69128334D1
DE69128334D1 DE69128334T DE69128334T DE69128334D1 DE 69128334 D1 DE69128334 D1 DE 69128334D1 DE 69128334 T DE69128334 T DE 69128334T DE 69128334 T DE69128334 T DE 69128334T DE 69128334 D1 DE69128334 D1 DE 69128334D1
Authority
DE
Germany
Prior art keywords
manufacture
integrated circuit
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128334T
Other languages
English (en)
Other versions
DE69128334T2 (de
Inventor
Roland Sauerbrey
Michael C Smayling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69128334D1 publication Critical patent/DE69128334D1/de
Application granted granted Critical
Publication of DE69128334T2 publication Critical patent/DE69128334T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/5328—Conductive materials containing conductive organic materials or pastes, e.g. conductive adhesives, inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H01B1/124—Intrinsically conductive polymers
    • H01B1/128—Intrinsically conductive polymers comprising six-membered aromatic rings in the main chain, e.g. polyanilines, polyphenylenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/485—Adaptation of interconnections, e.g. engineering charges, repair techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0329—Intrinsically conductive polymer [ICP]; Semiconductive polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1136—Conversion of insulating material into conductive material, e.g. by pyrolysis
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
DE69128334T 1990-09-28 1991-09-27 Integrierte Schaltung und Verfahren zu deren Herstellung Expired - Fee Related DE69128334T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/590,259 US5689428A (en) 1990-09-28 1990-09-28 Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture

Publications (2)

Publication Number Publication Date
DE69128334D1 true DE69128334D1 (de) 1998-01-15
DE69128334T2 DE69128334T2 (de) 1998-08-06

Family

ID=24361519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128334T Expired - Fee Related DE69128334T2 (de) 1990-09-28 1991-09-27 Integrierte Schaltung und Verfahren zu deren Herstellung

Country Status (5)

Country Link
US (2) US5689428A (de)
EP (1) EP0478368B1 (de)
JP (1) JP3396488B2 (de)
KR (1) KR100270414B1 (de)
DE (1) DE69128334T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615257B1 (de) * 1993-03-09 1999-06-02 Koninklijke Philips Electronics N.V. Methode zur Herstellung eines Verbundstoffes mit einer Metallschicht auf einer leitfähigen Polymerschicht
EP0615256B1 (de) * 1993-03-09 1998-09-23 Koninklijke Philips Electronics N.V. Herstellungsverfahren eines Musters von einem elektrisch leitfähigen Polymer auf einer Substratoberfläche und Metallisierung eines solchen Musters
US5567550A (en) * 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits
DE69433124T2 (de) 1993-11-05 2004-05-27 Intergraph Corp., Huntsville Befehlsspeicher mit assoziativem Kreuzschienenschalter
JP3503787B2 (ja) * 1996-01-22 2004-03-08 貢 英 薄膜の形成方法
US5870176A (en) * 1996-06-19 1999-02-09 Sandia Corporation Maskless lithography
JP2002504240A (ja) * 1997-06-12 2002-02-05 ゼットフォリエ ビー．ブイ． その表面に対し垂直な一方向の導電性をもつ基板を含む装置、及び該装置を製造する方法
WO1999010929A2 (en) * 1997-08-22 1999-03-04 Koninklijke Philips Electronics N.V. A method of providing a vertical interconnect between thin film microelectronic devices
CN1187793C (zh) * 1998-01-28 2005-02-02 薄膜电子有限公司 制作导电或半导电三维结构的方法和擦除该结构的方法
US6323067B1 (en) * 1999-01-28 2001-11-27 Infineon Technologies North America Corp. Light absorption layer for laser blown fuses
US6486051B1 (en) * 1999-03-17 2002-11-26 Intel Corporation Method for relieving bond stress in an under-bond-pad resistor
JP2003513475A (ja) 1999-11-02 2003-04-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄膜超小型電子装置間の垂直相互接続を形成する方法及びそのような垂直相互接続を備えた製品
US6521972B1 (en) * 2000-09-28 2003-02-18 Eic Corporation RF power transistor having low parasitic impedance input feed structure
DE10048243A1 (de) * 2000-09-29 2002-04-18 Bosch Gmbh Robert Substrat mit geglätteter Oberfläche und Verfahren zu seiner Herstellung
US6864118B2 (en) * 2002-01-28 2005-03-08 Hewlett-Packard Development Company, L.P. Electronic devices containing organic semiconductor materials
EP1470449A1 (de) * 2002-01-31 2004-10-27 Scandinavian Micro Biodevices A/S Verfahren zur verbindung von einem bauteil an einer mikrostruktur durch lichtbestrahlung
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US6890050B2 (en) * 2002-08-20 2005-05-10 Palo Alto Research Center Incorporated Method for the printing of homogeneous electronic material with a multi-ejector print head
US6924661B2 (en) 2003-02-10 2005-08-02 International Business Machines Corporation Power switch circuit sizing technique
US7701323B1 (en) * 2003-05-30 2010-04-20 Interconnect Portfolio Llc Low profile discrete electronic components and applications of same
JP4106438B2 (ja) * 2003-06-20 2008-06-25 独立行政法人産業技術総合研究所 多層微細配線インターポーザおよびその製造方法
US7012013B1 (en) * 2003-12-03 2006-03-14 Advanced Micro Devices, Inc. Dielectric pattern formation for organic electronic devices
US7203036B2 (en) * 2004-07-30 2007-04-10 Hitachi Global Storage Technologies Netherlands B.V. Planar extraordinary magnetoresistance sensor
JP4705771B2 (ja) * 2004-08-30 2011-06-22 三菱電機株式会社 半導体装置の製造方法
JP4655891B2 (ja) * 2005-11-02 2011-03-23 ソニー株式会社 通信用半導体チップ、キャリブレーション方法、並びにプログラム
US7488950B2 (en) * 2006-06-05 2009-02-10 Blaise Laurent Mouttet Crosswire sensor
CN104094403B (zh) * 2011-12-23 2017-03-22 英特尔公司 具有使用者可选值的工艺可调式电阻器
JP6715508B2 (ja) * 2016-03-09 2020-07-01 国立大学法人静岡大学 金属微細構造体の製造方法
EP3723459A1 (de) 2019-04-10 2020-10-14 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Komponententräger mit hoher passiver intermodulationsleistung (pim)

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816163A (en) * 1969-11-19 1974-06-11 Owens Illinois Inc Refractory article and method for producing same
US3704454A (en) 1970-05-18 1972-11-28 Electronic Arrays Accessing system for and in integrated circuit type memories
CH623851A5 (de) * 1975-10-04 1981-06-30 Akzo Nv
US4222903A (en) 1978-05-04 1980-09-16 University Patents, Inc. P-Type electrically conducting doped polyacetylene film and method of preparing same
JPS54162174A (en) * 1978-06-14 1979-12-22 Sumitomo Bakelite Co Method of producing flexible printed circuit board
DE2837800A1 (de) * 1978-08-30 1980-03-13 Philips Patentverwaltung Verfahren zum herstellen von halbleiterbauelementen
US4257825A (en) 1978-08-30 1981-03-24 U.S. Philips Corporation Method of manufacturing semiconductor devices having improvements in device reliability by thermally treating selectively implanted test figures in wafers
US4199650A (en) * 1978-11-07 1980-04-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Modification of the electrical and optical properties of polymers
DE3146981A1 (de) * 1981-11-26 1983-06-01 Siemens AG, 1000 Berlin und 8000 München Fototransistor in mos-duennschichttechnik, verfahren zu seiner herstellung und verfahren zu seinem betrieb.
US4508749A (en) * 1983-12-27 1985-04-02 International Business Machines Corporation Patterning of polyimide films with ultraviolet light
US4843443A (en) 1984-05-14 1989-06-27 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
KR900002364B1 (ko) * 1984-05-30 1990-04-12 후지쓰가부시끼가이샤 패턴 형성재의 제조방법
DE3422316C2 (de) 1984-06-15 1986-11-20 Zipperling Kessler & Co (Gmbh & Co), 2070 Ahrensburg Verfahren zur Herstellung von verformbaren Polymerblends aus elektrisch leitfähigen organischen Polymeren und/oder organischen Leitern, Vorrichtung zur Durchführung des Verfahrens sowie Verwendung der Polymerblends
JPS6161457A (ja) * 1984-09-01 1986-03-29 Canon Inc 光センサおよびその製造方法
JPS61159413A (ja) 1984-11-30 1986-07-19 Polyplastics Co 導電性樹脂複合体の製造方法
US4702792A (en) * 1985-10-28 1987-10-27 International Business Machines Corporation Method of forming fine conductive lines, patterns and connectors
US4781971A (en) 1985-12-16 1988-11-01 Hoechst Celanese Corporation Electrically conductive thermally stabilized acrylic fibrous material and process for preparing same
US4798782A (en) * 1986-02-08 1989-01-17 The British Petroleum Company P.L.C. Poly(acetylene) films having localized zones of a low conductivity material
FR2596935B1 (fr) * 1986-04-02 1988-06-10 Bendix Electronics Sa Procede et dispositif pour envoyer du courant electrique dans un circuit a l'aide d'un transistor
CA1302675C (en) * 1986-05-20 1992-06-09 Masakazu Uekita Thin film and device having the same
JPH0654797B2 (ja) * 1986-08-06 1994-07-20 日産自動車株式会社 Ｃｍｏｓ半導体装置
EP0263574A1 (de) * 1986-09-08 1988-04-13 THORN EMI North America Inc. Methode zur Herstellung eines Halbleiterbauelementes und ein solches Bauelement mit zumindest einer selektiv aktivierbaren Leiterbahn
US4835118A (en) 1986-09-08 1989-05-30 Inmos Corporation Non-destructive energy beam activated conductive links
US4733383A (en) * 1986-09-16 1988-03-22 Waterbury Nelson J Combined digital and analog timepiece and radiation monitor assembly
US4797508A (en) * 1986-09-19 1989-01-10 Firan Corporation Method for producing circuit boards with deposited metal patterns and circuit boards produced thereby
US4707394A (en) * 1986-09-19 1987-11-17 Firan Corporation Method for producing circuit boards with deposited metal patterns and circuit boards produced thereby
US5017420A (en) 1986-10-23 1991-05-21 Hoechst Celanese Corp. Process for preparing electrically conductive shaped articles from polybenzimidazoles
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
US4843034A (en) * 1987-06-12 1989-06-27 Massachusetts Institute Of Technology Fabrication of interlayer conductive paths in integrated circuits
JPS6437872A (en) * 1987-08-04 1989-02-08 Seiko Epson Corp Nonvolatile memory
US5028354A (en) 1987-10-05 1991-07-02 Regents Of The University Of California Conductive articles of intractable polymers method for making
JPH01199404A (ja) * 1988-02-04 1989-08-10 Toshiba Corp トリミング抵抗回路網
JPH01207975A (ja) * 1988-02-16 1989-08-21 Seiko Epson Corp 分子エレクトロニクス装置
US5272359A (en) * 1988-04-07 1993-12-21 California Institute Of Technology Reversible non-volatile switch based on a TCNQ charge transfer complex
US4884119A (en) * 1988-04-22 1989-11-28 American Telephone & Telegraph Company Integrated multiple quantum well photonic and electronic devices
US5250388A (en) * 1988-05-31 1993-10-05 Westinghouse Electric Corp. Production of highly conductive polymers for electronic circuits
US5493129A (en) 1988-06-29 1996-02-20 Hitachi, Ltd. Thin film transistor structure having increased on-current
JPH02174255A (ja) * 1988-12-27 1990-07-05 Mitsubishi Electric Corp 半導体集積回路装置
JPH02184072A (ja) * 1989-01-11 1990-07-18 Victor Co Of Japan Ltd 固体撮像装置
JPH07103190B2 (ja) * 1989-02-15 1995-11-08 松下電器産業株式会社 有機導電性薄膜とその製造方法
US5100762A (en) * 1989-07-10 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Radiation-sensitive polymer and radiation-sensitive composition containing the same
JP2813428B2 (ja) * 1989-08-17 1998-10-22 三菱電機株式会社 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置
JP3028371B2 (ja) * 1989-08-22 2000-04-04 ヴアブコ・ヴエステイングハウス・フアールツオイクブレムゼン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング パワートランジスタ及びこれにより制御される負荷の監視方法
JP2855701B2 (ja) * 1989-09-29 1999-02-10 日本電気株式会社 Ｃｍｏｓ半導体集積回路装置
US5236551A (en) * 1990-05-10 1993-08-17 Microelectronics And Computer Technology Corporation Rework of polymeric dielectric electrical interconnect by laser photoablation
US5130380A (en) 1990-05-29 1992-07-14 Carew Evan B Conductive polymers
WO1992004396A1 (en) * 1990-08-30 1992-03-19 The Regents Of The University Of California Photogenerated conducting organic polymers
US5103293A (en) * 1990-12-07 1992-04-07 International Business Machines Corporation Electronic circuit packages with tear resistant organic cores
JPH04241466A (ja) * 1991-01-16 1992-08-28 Casio Comput Co Ltd 電界効果型トランジスタ
US5408109A (en) 1991-02-27 1995-04-18 The Regents Of The University Of California Visible light emitting diodes fabricated from soluble semiconducting polymers
US5246627A (en) 1991-05-06 1993-09-21 Uniax Corporation Melt-processible conducting polymer blends based on fibrils of intractable conducting polymers
US5567550A (en) * 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits

Also Published As

Publication number Publication date
KR100270414B1 (ko) 2000-11-01
EP0478368B1 (de) 1997-12-03
US5689428A (en) 1997-11-18
JP3396488B2 (ja) 2003-04-14
JPH06204221A (ja) 1994-07-22
EP0478368A1 (de) 1992-04-01
DE69128334T2 (de) 1998-08-06
KR920007195A (ko) 1992-04-28
US6246102B1 (en) 2001-06-12

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