DE69229332D1 - Positiv-arbeitende Resistzusammensetzung - Google Patents

Positiv-arbeitende Resistzusammensetzung

Info

Publication number: DE69229332D1
Authority: DE; Germany
Prior art keywords: resist composition; positive working; working resist; positive; composition
Prior art date: 1991-12-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69229332T

Other languages

English (en)

Other versions

DE69229332T2 (de

Inventor

Kazuhiko Hashimoto

Haruyoshi Osaki

Chinehito Ebina

Kyoko Nagase

Hiroshi Moriuma

Yasunori Uetani

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Chemical Co Ltd

Original Assignee

Sumitomo Chemical Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-12-27

Filing date

1992-12-23

Publication date

1999-07-08

1992-12-23 Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd

1999-07-08 Publication of DE69229332D1 publication Critical patent/DE69229332D1/de

2000-03-02 Application granted granted Critical

2000-03-02 Publication of DE69229332T2 publication Critical patent/DE69229332T2/de

2012-12-24 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/24—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with mixtures of two or more phenols which are not covered by only one of the groups C08G8/10 - C08G8/20

Landscapes

Physics & Mathematics (AREA)
Chemical & Material Sciences (AREA)
Spectroscopy & Molecular Physics (AREA)
General Physics & Mathematics (AREA)
Medicinal Chemistry (AREA)
Organic Chemistry (AREA)
Polymers & Plastics (AREA)
Health & Medical Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Compositions Of Macromolecular Compounds (AREA)
Phenolic Resins Or Amino Resins (AREA)
Materials For Photolithography (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

DE69229332T 1991-12-27 1992-12-23 Positiv-arbeitende Resistzusammensetzung Expired - Fee Related DE69229332T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP34669391A JP3182823B2 (ja)	1991-12-27	1991-12-27	ポジ型レジスト組成物

Publications (2)

Publication Number	Publication Date
DE69229332D1 true DE69229332D1 (de)	1999-07-08
DE69229332T2 DE69229332T2 (de)	2000-03-02

Family

ID=18385180

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69229332T Expired - Fee Related DE69229332T2 (de)	1991-12-27	1992-12-23	Positiv-arbeitende Resistzusammensetzung

Country Status (8)

Country	Link
US (1)	US5468590A (de)
EP (1)	EP0550009B1 (de)
JP (1)	JP3182823B2 (de)
KR (1)	KR100247843B1 (de)
CA (1)	CA2085962A1 (de)
DE (1)	DE69229332T2 (de)
MX (1)	MX9207572A (de)
TW (1)	TW263568B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3319092B2 (ja) *	1993-11-08	2002-08-26	住友化学工業株式会社	ポジ型レジスト組成物
EP0660186A1 (de) *	1993-12-20	1995-06-28	Mitsubishi Chemical Corporation	Lichtempfindliche Harzzusammensetzung und Verfahren zur Bildherstellung damit
JP3424341B2 (ja) *	1994-04-11	2003-07-07	住友化学工業株式会社	感光性樹脂組成物
JP3230925B2 (ja) *	1994-04-12	2001-11-19	富士写真フイルム株式会社	ポジ型フオトレジスト組成物
TW332264B (en) *	1994-09-07	1998-05-21	Mitsubishi Chem Corp	Photosensitive resin composition and method for forming a photoresist pattern
DE69519781T2 (de) *	1994-10-05	2001-06-07	Arakawa Chemical Industries, Ltd.	Strahlungsempfindliche Harzzusammensetzung
JP3427562B2 (ja) *	1995-05-09	2003-07-22	住友化学工業株式会社	ポジ型レジスト組成物
US5709977A (en) *	1995-07-13	1998-01-20	Fuji Photo Film Co., Ltd.	Positive working photoresist composition
JP3076523B2 (ja) *	1996-03-25	2000-08-14	東京応化工業株式会社	ポジ型ホトレジスト組成物
JP3057010B2 (ja) *	1996-08-29	2000-06-26	東京応化工業株式会社	ポジ型レジスト組成物及びレジストパターンの形成方法
US6040107A (en) *	1998-02-06	2000-03-21	Olin Microelectronic Chemicals, Inc.	Photosensitive diazonaphthoquinone esters based on selected cyclic alkyl ether-containing phenolics and their use in radiation sensitive mixtures
JP2002189294A (ja) *	2000-12-21	2002-07-05	Mitsubishi Chemicals Corp	ポジ型画像形成材料
CA2444785C (en) *	2003-10-28	2005-02-15	Centennial 2000 Inc.	Prime rib meat product and process of manufacture
KR101737798B1 (ko) *	2010-03-24	2017-05-30	삼성디스플레이 주식회사	포토레지스트 조성물 및 이를 이용한 패턴의 형성 방법
US8822123B2 (en)	2012-07-13	2014-09-02	Momentive Specialty Chemicals Inc.	Polymeric materials and methods for making the polymeric materials
JP5935955B2 (ja) *	2014-03-20	2016-06-15	Dic株式会社	ノボラック型フェノール性水酸基含有樹脂、その製造方法、硬化性組成物、レジスト用組成物及びカラーレジスト
US10047186B2 (en) *	2014-11-25	2018-08-14	Dic Corporation	Novolac phenol resin, manufacturing method therefor, photosensitive composition, resist material and coating film
TWI668252B (zh) *	2014-12-02	2019-08-11	日商迪愛生股份有限公司	Resist agent underlayer film forming composition and resist underlayer film
US10577449B2 (en) *	2015-05-20	2020-03-03	Dic Corporation	Phenolic-hydroxyl-group-containing novolac resin and resist film
KR102647162B1 (ko) *	2015-10-19	2024-03-14	닛산 가가쿠 가부시키가이샤	장쇄 알킬기함유 노볼락을 포함하는 레지스트 하층막 형성 조성물
JP6940834B2 (ja) *	2019-01-21	2021-09-29	Dic株式会社	フェノール性水酸基含有樹脂、感光性組成物、レジスト膜、硬化性組成物及び硬化物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61141441A (ja) *	1984-12-14	1986-06-28	Tokyo Ohka Kogyo Co Ltd	ポジ型ホトレジスト組成物
US4920028A (en) *	1988-03-31	1990-04-24	Morton Thiokol, Inc.	High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone
US5177172A (en) *	1988-05-31	1993-01-05	Ocg Microelectronic Materials, Inc.	Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions
EP0358871B1 (de) *	1988-07-07	1998-09-30	Sumitomo Chemical Company, Limited	Strahlungsempfindliche, positiv arbeitende Resistzusammensetzung
CA2023791A1 (en) *	1989-08-24	1991-02-25	Ayako Ida	Radiation-sensitive positive resist composition
JP3063148B2 (ja) *	1989-12-27	2000-07-12	住友化学工業株式会社	ポジ型レジスト組成物

1991
- 1991-12-27 JP JP34669391A patent/JP3182823B2/ja not_active Expired - Lifetime
1992
- 1992-12-18 TW TW081110156A patent/TW263568B/zh not_active IP Right Cessation
- 1992-12-21 CA CA002085962A patent/CA2085962A1/en not_active Abandoned
- 1992-12-22 KR KR1019920025116A patent/KR100247843B1/ko not_active IP Right Cessation
- 1992-12-23 DE DE69229332T patent/DE69229332T2/de not_active Expired - Fee Related
- 1992-12-23 EP EP92121878A patent/EP0550009B1/de not_active Expired - Lifetime
- 1992-12-24 MX MX9207572A patent/MX9207572A/es not_active IP Right Cessation
1994
- 1994-11-29 US US08/348,994 patent/US5468590A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0550009B1 (de)	1999-06-02
JP3182823B2 (ja)	2001-07-03
KR930013869A (ko)	1993-07-22
TW263568B (de)	1995-11-21
JPH05181270A (ja)	1993-07-23
MX9207572A (es)	1993-06-30
US5468590A (en)	1995-11-21
KR100247843B1 (ko)	2000-06-01
EP0550009A1 (de)	1993-07-07
DE69229332T2 (de)	2000-03-02
CA2085962A1 (en)	1993-06-28

Publication	Publication Date	Title
DE69232042D1 (de)	2001-10-11	Positiv-arbeitende lichtempfindliche Zusammensetzung
DE69222234D1 (de)	1997-10-23	Photopolymerisierbare Zusammensetzung
DE69218302D1 (de)	1997-04-24	Betonzusammensetzung
DE69129955D1 (de)	1998-09-17	Photolackzusammensetzung
DE69327678D1 (de)	2000-03-02	Positiv arbeitende Resistzusammensetzung
FI931964L (fi)	1993-04-30	Bryningskomposition
DE69229332D1 (de)	1999-07-08	Positiv-arbeitende Resistzusammensetzung
DE69226920D1 (de)	1998-10-15	Lichtempfindliche Zusammensetzung
DE69222987D1 (de)	1997-12-11	Photopolymerisierbare zusammensetzung
DE69431570D1 (de)	2002-11-21	Positivarbeitende resistzusammensetzung
DE69220612D1 (de)	1997-08-07	Positivarbeitende Photoresistzusammensetzung
FI933467L (fi)	1993-08-04	Komposition
DE69123873D1 (de)	1997-02-13	Photoresistzusammensetzung
DE69226456D1 (de)	1998-09-10	Negativarbeitende Photoresistzusammensetzung
DE69309769D1 (de)	1997-05-22	Positivarbeitende Resistzusammensetzung
FI923865L (fi)	1992-08-28	Monoatsopigmentkompositioner
DE69028476D1 (de)	1996-10-17	Positive arbeitende Fotolackzusammensetzungen
KR900006817A (ko)	1990-05-08	레지스트 조성물
DE69228584D1 (de)	1999-04-15	Positiv-arbeitendes Resistmaterial
DE69219747D1 (de)	1997-06-19	Lichtempfindliche Zusammensetzung
DE69121790D1 (de)	1996-10-10	Positivresistzusammensetzung
DE69209356D1 (de)	1996-05-02	Positiv-arbeitende Resistzusammensetzung
DE69126868D1 (de)	1997-08-21	Positivresistzusammensetzung
DE69208580D1 (de)	1996-04-04	Photopolymerisierbare Zusammensetzung
DE69130265D1 (de)	1998-11-05	Positive arbeitende Photolackzusammensetzung

Legal Events

Date	Code	Title	Description
2000-06-29	8364	No opposition during term of opposition
2004-10-21	8339	Ceased/non-payment of the annual fee