KR900006817A - 레지스트 조성물 - Google Patents

레지스트 조성물

Info

Publication number: KR900006817A
Authority: KR; South Korea
Prior art keywords: resist composition; resist; composition
Prior art date: 1988-10-13

Application number

KR1019890014661A

Other languages

English (en)

Other versions

KR0159500B1 (ko

Inventor

야스노리 우에따니

마꼬또 하나바따

히로또시 나까니시

고지 구와나

후미오 오이

Original Assignee

스미또모 가가꾸 고오교 가부시끼가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-10-13

Filing date

1989-10-13

Publication date

1990-05-08

1989-10-13 Application filed by 스미또모 가가꾸 고오교 가부시끼가이샤 filed Critical 스미또모 가가꾸 고오교 가부시끼가이샤

1990-05-08 Publication of KR900006817A publication Critical patent/KR900006817A/ko

1998-12-15 Application granted granted Critical

1998-12-15 Publication of KR0159500B1 publication Critical patent/KR0159500B1/ko

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Spectroscopy & Molecular Physics (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Compositions Of Macromolecular Compounds (AREA)
Materials For Photolithography (AREA)
Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

KR1019890014661A 1988-10-13 1989-10-13 레지스트 조성물 KR0159500B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP63258937A JP2715480B2 (ja)	1988-10-13	1988-10-13	ポジ型レジスト用組成物
JP258937/1988		1988-10-13

Publications (2)

Publication Number	Publication Date
KR900006817A true KR900006817A (ko)	1990-05-08
KR0159500B1 KR0159500B1 (ko)	1998-12-15

Family

ID=17327114

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019890014661A KR0159500B1 (ko)	1988-10-13	1989-10-13	레지스트 조성물

Country Status (6)

Country	Link
US (1)	US5378586A (ko)
EP (1)	EP0363978A3 (ko)
JP (1)	JP2715480B2 (ko)
KR (1)	KR0159500B1 (ko)
CA (1)	CA2000552A1 (ko)
MX (1)	MX170146B (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2761786B2 (ja) *	1990-02-01	1998-06-04	富士写真フイルム株式会社	ポジ型フオトレジスト組成物
JP3070116B2 (ja)	1991-03-25	2000-07-24	住友化学工業株式会社	多価フェノール化合物およびそれを用いてなるポジ型レジスト組成物
JP2976597B2 (ja) *	1991-04-17	1999-11-10	住友化学工業株式会社	キノンジアジドスルホン酸エステルの製造方法
JP3094652B2 (ja) *	1992-05-18	2000-10-03	住友化学工業株式会社	ポジ型レジスト組成物
KR100277365B1 (ko) *	1992-11-11	2001-09-17	고사이 아끼오	포지티브형레제스트조성물
US5609982A (en) *	1993-12-17	1997-03-11	Fuji Photo Film Co., Ltd.	Positive-working photoresist composition
US5700620A (en) *	1993-12-24	1997-12-23	Fuji Photo Film Co., Ltd.	Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound
EP0695740B1 (en)	1994-08-05	2000-11-22	Sumitomo Chemical Company Limited	Quinonediazide sulfonic acid esters and positive photoresist compositions comprising the same
JP3278306B2 (ja)	1994-10-31	2002-04-30	富士写真フイルム株式会社	ポジ型フォトレジスト組成物
US5541033A (en) *	1995-02-01	1996-07-30	Ocg Microelectronic Materials, Inc.	Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions
US5821345A (en) *	1996-03-12	1998-10-13	Shipley Company, L.L.C.	Thermodynamically stable photoactive compound
US5919597A (en) *	1997-10-30	1999-07-06	Ibm Corporation Of Armonk	Methods for preparing photoresist compositions
KR100323831B1 (ko) *	1999-03-30	2002-02-07	윤종용	포토레지스트 조성물, 이의 제조 방법 및 이를 사용한 패턴의 형성방법
KR102060012B1 (ko) *	2013-02-15	2019-12-30	삼성디스플레이 주식회사	감광성 수지 조성물 및 이를 이용한 패턴 형성 방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2767092A (en) *	1951-12-06	1956-10-16	Azoplate Corp	Light sensitive material for lithographic printing
DE938233C (de) *	1953-03-11	1956-01-26	Kalle & Co Ag	Lichtempfindliches Material fuer die photomechanische Herstellung von Druckformen
NL130248C (ko) *	1959-01-21
US4059449A (en) *	1976-09-30	1977-11-22	Rca Corporation	Photoresist containing a thiodipropionate compound
DE3100077A1 (de) *	1981-01-03	1982-08-05	Hoechst Ag, 6000 Frankfurt	Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
JPS58150948A (ja) *	1982-03-03	1983-09-07	Dainippon Ink & Chem Inc	感光性組成物
US4439516A (en) *	1982-03-15	1984-03-27	Shipley Company Inc.	High temperature positive diazo photoresist processing using polyvinyl phenol
US4499171A (en) *	1982-04-20	1985-02-12	Japan Synthetic Rubber Co., Ltd.	Positive type photosensitive resin composition with at least two o-quinone diazides
JPS59165053A (ja) *	1983-03-11	1984-09-18	Japan Synthetic Rubber Co Ltd	ポジ型感光性樹脂組成物
JPS60121445A (ja) *	1983-12-06	1985-06-28	Japan Synthetic Rubber Co Ltd	集積回路作製用ポジ型感光性樹脂組成物
JPS61185741A (ja) *	1985-02-13	1986-08-19	Mitsubishi Chem Ind Ltd	ポジ型フオトレジスト組成物
US4588670A (en) *	1985-02-28	1986-05-13	American Hoechst Corporation	Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist
JPS61257525A (ja) *	1985-05-10	1986-11-15	Mitsubishi Heavy Ind Ltd	浮防油堤装置
JP2568827B2 (ja) *	1986-10-29	1997-01-08	富士写真フイルム株式会社	ポジ型フオトレジスト組成物
JPS63249152A (ja) *	1987-04-06	1988-10-17	Canon Inc	電子写真感光体
US4837121A (en) *	1987-11-23	1989-06-06	Olin Hunt Specialty Products Inc.	Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
DE3842896C2 (de) *	1988-04-22	1998-07-02	Tokyo Ohka Kogyo Co Ltd	Positiv arbeitende lichtempfindliche Zusammensetzung
JPH01283556A (ja) *	1988-05-11	1989-11-15	Chisso Corp	ポジ型フォトレジスト組成物
US5059507A (en) *	1988-06-13	1991-10-22	Sumitomo Chemical Company, Limited	Positive resist composition containing quinone diazide sulfonic acid ester of a phenol compound and an alkali soluble resin
JP2800186B2 (ja) *	1988-07-07	1998-09-21	住友化学工業株式会社	集積回路製作用ポジ型レジスト組成物の製造方法
US4959292A (en) *	1988-07-11	1990-09-25	Olin Hunt Specialty Products Inc.	Light-sensitive o-quinone diazide composition and product with phenolic novolak prepared by condensation with haloacetoaldehyde
JP2636348B2 (ja) *	1988-07-20	1997-07-30	住友化学工業株式会社	ポジ型レジスト用組成物
US4943511A (en) *	1988-08-05	1990-07-24	Morton Thiokol, Inc.	High sensitivity mid and deep UV resist

1988
- 1988-10-13 JP JP63258937A patent/JP2715480B2/ja not_active Expired - Fee Related
1989
- 1989-10-11 MX MX017936A patent/MX170146B/es unknown
- 1989-10-12 CA CA002000552A patent/CA2000552A1/en not_active Abandoned
- 1989-10-13 EP EP19890119055 patent/EP0363978A3/en not_active Withdrawn
- 1989-10-13 KR KR1019890014661A patent/KR0159500B1/ko not_active IP Right Cessation
1993
- 1993-11-16 US US08/152,891 patent/US5378586A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0363978A2 (en)	1990-04-18
MX170146B (es)	1993-08-09
KR0159500B1 (ko)	1998-12-15
CA2000552A1 (en)	1990-04-13
JPH02103543A (ja)	1990-04-16
EP0363978A3 (en)	1991-06-05
JP2715480B2 (ja)	1998-02-18
US5378586A (en)	1995-01-03

Publication	Publication Date	Title
BR8905204A (pt)	1990-05-15	Composicao colutoria
DE68926516D1 (de)	1996-06-27	Lichtempfindliche Zusammensetzung
BR9007196A (pt)	1991-12-10	Composicao
DK55889A (da)	1989-08-11	Substituerede pyrroler
DE68927140D1 (de)	1996-10-17	Photolackzusammensetzung
ES2012750A4 (es)	1990-04-16	Conjunto recipiente-aplicador
DE68921867D1 (de)	1995-04-27	Photopolymerisierbare Zusammensetzung.
DE68915148D1 (de)	1994-06-09	Fotoresist-zusammensetzung.
DE68928328D1 (de)	1997-10-23	Harzzusammensetzung
SE9000221D0 (sv)	1990-01-22	Komposition
DE68914176D1 (de)	1994-05-05	Photopolymerisierbare Zusammensetzung.
BR8906787A (pt)	1990-09-18	Composicao
KR900007237A (ko)	1990-05-09	투영장치
DE69031785D1 (de)	1998-01-22	Lichtempfindliche Zusammensetzung
DE69032715D1 (de)	1998-12-03	Lichtempfindliche Zusammensetzung
KR900006817A (ko)	1990-05-08	레지스트 조성물
DE68919102D1 (de)	1994-12-08	Photopolymerisierbare Zusammensetzung.
DE69121790D1 (de)	1996-10-10	Positivresistzusammensetzung
DE69029222D1 (de)	1997-01-09	Lichtempfindliche Zusammensetzung
BR8902491A (pt)	1990-01-16	Composicao
DE69126868D1 (de)	1997-08-21	Positivresistzusammensetzung
TR26099A (tr)	1993-12-28	Islah edilmis pestisid terkip
DK578389A (da)	1990-05-19	Substituerede oxadiaminobutaner
DE68922901D1 (de)	1995-07-06	Photoresistzusammensetzung.
BR8907528A (pt)	1991-06-11	Composicao crio-protetora

Legal Events

Date	Code	Title	Description
1989-10-13	PA0109	Patent application	Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19891013
1990-05-08	PG1501	Laying open of application
1994-10-05	A201	Request for examination
1994-10-05	PA0201	Request for examination	Patent event code: PA02012R01D Patent event date: 19941005 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19891013 Comment text: Patent Application
1997-10-13	E902	Notification of reason for refusal
1997-10-13	PE0902	Notice of grounds for rejection	Comment text: Notification of reason for refusal Patent event date: 19971013 Patent event code: PE09021S01D
1998-03-12	E902	Notification of reason for refusal
1998-03-12	PE0902	Notice of grounds for rejection	Comment text: Notification of reason for refusal Patent event date: 19980312 Patent event code: PE09021S01D
1998-06-02	E701	Decision to grant or registration of patent right
1998-06-02	PE0701	Decision of registration	Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19980602
1998-08-12	GRNT	Written decision to grant
1998-08-12	PR0701	Registration of establishment	Comment text: Registration of Establishment Patent event date: 19980812 Patent event code: PR07011E01D
1998-08-12	PR1002	Payment of registration fee	Payment date: 19980812 End annual number: 3 Start annual number: 1
1998-12-15	PG1601	Publication of registration
2001-08-01	PR1001	Payment of annual fee	Payment date: 20010801 Start annual number: 4 End annual number: 4
2002-08-08	PR1001	Payment of annual fee	Payment date: 20020808 Start annual number: 5 End annual number: 5
2003-08-07	PR1001	Payment of annual fee	Payment date: 20030807 Start annual number: 6 End annual number: 6
2004-08-09	PR1001	Payment of annual fee	Payment date: 20040809 Start annual number: 7 End annual number: 7
2005-08-09	PR1001	Payment of annual fee	Payment date: 20050809 Start annual number: 8 End annual number: 8
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2012-07-27	FPAY	Annual fee payment	Payment date: 20120727 Year of fee payment: 15
2012-07-27	PR1001	Payment of annual fee	Payment date: 20120727 Start annual number: 15 End annual number: 15
2013-08-13	EXPY	Expiration of term
2013-08-13	PC1801	Expiration of term	Termination date: 20140212 Termination category: Expiration of duration