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DE69025297D1 - Integrierte Halbleiterschaltung vom Master-slice-Typ - Google Patents

Integrierte Halbleiterschaltung vom Master-slice-Typ

Info

Publication number
DE69025297D1
DE69025297D1 DE69025297T DE69025297T DE69025297D1 DE 69025297 D1 DE69025297 D1 DE 69025297D1 DE 69025297 T DE69025297 T DE 69025297T DE 69025297 T DE69025297 T DE 69025297T DE 69025297 D1 DE69025297 D1 DE 69025297D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
integrated semiconductor
slice type
master slice
master
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69025297T
Other languages
English (en)
Other versions
DE69025297T2 (de
Inventor
Andreas A Van Den Elshout
Hendrikus Josephius Veendrick
Dirk Willem Harberts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69025297D1 publication Critical patent/DE69025297D1/de
Application granted granted Critical
Publication of DE69025297T2 publication Critical patent/DE69025297T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE69025297T 1989-11-15 1990-11-09 Integrierte Halbleiterschaltung vom Master-slice-Typ Expired - Fee Related DE69025297T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8902820A NL8902820A (nl) 1989-11-15 1989-11-15 Geintegreerde halfgeleiderschakeling van het master slice type.

Publications (2)

Publication Number Publication Date
DE69025297D1 true DE69025297D1 (de) 1996-03-21
DE69025297T2 DE69025297T2 (de) 1996-08-29

Family

ID=19855628

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69025297T Expired - Fee Related DE69025297T2 (de) 1989-11-15 1990-11-09 Integrierte Halbleiterschaltung vom Master-slice-Typ

Country Status (8)

Country Link
US (1) US5053648A (de)
EP (1) EP0434104B1 (de)
JP (1) JP2852386B2 (de)
KR (1) KR100209866B1 (de)
CN (1) CN1030022C (de)
DE (1) DE69025297T2 (de)
NL (1) NL8902820A (de)
RU (1) RU2089943C1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430859A (en) * 1991-07-26 1995-07-04 Sundisk Corporation Solid state memory system including plural memory chips and a serialized bus
US5592415A (en) * 1992-07-06 1997-01-07 Hitachi, Ltd. Non-volatile semiconductor memory
US5311079A (en) * 1992-12-17 1994-05-10 Ditlow Gary S Low power, high performance PLA
JPH06318683A (ja) * 1993-05-01 1994-11-15 Toshiba Corp 半導体記憶装置及びその製造方法
US6154864A (en) * 1998-05-19 2000-11-28 Micron Technology, Inc. Read only memory embedded in a dynamic random access memory
US6269017B1 (en) 1999-03-04 2001-07-31 Macronix International Co., Ltd. Multi level mask ROM with single current path
US6603693B2 (en) 2001-12-12 2003-08-05 Micron Technology, Inc. DRAM with bias sensing
US6545899B1 (en) * 2001-12-12 2003-04-08 Micron Technology, Inc. ROM embedded DRAM with bias sensing
US6747889B2 (en) * 2001-12-12 2004-06-08 Micron Technology, Inc. Half density ROM embedded DRAM
US20030115538A1 (en) * 2001-12-13 2003-06-19 Micron Technology, Inc. Error correction in ROM embedded DRAM
US20030185062A1 (en) * 2002-03-28 2003-10-02 Micron Technology, Inc. Proximity lookup for large arrays
US6785167B2 (en) * 2002-06-18 2004-08-31 Micron Technology, Inc. ROM embedded DRAM with programming
US6781867B2 (en) 2002-07-11 2004-08-24 Micron Technology, Inc. Embedded ROM device using substrate leakage
US6865100B2 (en) * 2002-08-12 2005-03-08 Micron Technology, Inc. 6F2 architecture ROM embedded DRAM
US7174477B2 (en) * 2003-02-04 2007-02-06 Micron Technology, Inc. ROM redundancy in ROM embedded DRAM
KR100624960B1 (ko) * 2004-10-05 2006-09-15 에스티마이크로일렉트로닉스 엔.브이. 반도체 메모리 장치 및 이의 패키지 및 이를 이용한메모리 카드
DE102005045952B3 (de) * 2005-09-26 2007-01-25 Infineon Technologies Ag Verfahren zur Spannungsversorgung einer Bitleitung und entsprechend ausgestaltete Speicheranordnung
US8098540B2 (en) * 2008-06-27 2012-01-17 Qualcomm Incorporated Dynamic power saving memory architecture
US8139426B2 (en) * 2008-08-15 2012-03-20 Qualcomm Incorporated Dual power scheme in memory circuit

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244551A (en) * 1975-10-06 1977-04-07 Toshiba Corp Logic circuit
US4032894A (en) * 1976-06-01 1977-06-28 International Business Machines Corporation Logic array with enhanced flexibility
JPS6057732B2 (ja) * 1976-12-17 1985-12-17 富士通株式会社 プログラム可能なcmos論理アレイ
US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays
JPS56156993A (en) * 1980-05-08 1981-12-03 Fujitsu Ltd Read only memory
US4485460A (en) * 1982-05-10 1984-11-27 Texas Instruments Incorporated ROM coupling reduction circuitry
US4506341A (en) * 1982-06-10 1985-03-19 International Business Machines Corporation Interlaced programmable logic array having shared elements
FR2563651B1 (fr) * 1984-04-27 1986-06-27 Thomson Csf Mat Tel Memoire morte realisee en circuit integre prediffuse
JPS60254495A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 半導体記憶装置
JPS61289598A (ja) * 1985-06-17 1986-12-19 Toshiba Corp 読出専用半導体記憶装置
US4740721A (en) * 1985-10-21 1988-04-26 Western Digital Corporation Programmable logic array with single clock dynamic logic
US4899308A (en) * 1986-12-11 1990-02-06 Fairchild Semiconductor Corporation High density ROM in a CMOS gate array

Also Published As

Publication number Publication date
JPH03176897A (ja) 1991-07-31
CN1030022C (zh) 1995-10-11
EP0434104A1 (de) 1991-06-26
EP0434104B1 (de) 1996-02-07
RU2089943C1 (ru) 1997-09-10
DE69025297T2 (de) 1996-08-29
NL8902820A (nl) 1991-06-03
KR910010523A (ko) 1991-06-29
JP2852386B2 (ja) 1999-02-03
US5053648A (en) 1991-10-01
KR100209866B1 (ko) 1999-07-15
CN1051823A (zh) 1991-05-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee