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DE3484313D1 - Integrierte halbleiterschaltung. - Google Patents

Integrierte halbleiterschaltung.

Info

Publication number
DE3484313D1
DE3484313D1 DE8585900191T DE3484313T DE3484313D1 DE 3484313 D1 DE3484313 D1 DE 3484313D1 DE 8585900191 T DE8585900191 T DE 8585900191T DE 3484313 T DE3484313 T DE 3484313T DE 3484313 D1 DE3484313 D1 DE 3484313D1
Authority
DE
Germany
Prior art keywords
semiconductor circuit
integrated semiconductor
integrated
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585900191T
Other languages
English (en)
Inventor
Hideo Sunami
Makoto Ohkura
Shinichiro Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3484313D1 publication Critical patent/DE3484313D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0195—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
DE8585900191T 1983-12-16 1984-12-14 Integrierte halbleiterschaltung. Expired - Lifetime DE3484313D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58236160A JPS60128654A (ja) 1983-12-16 1983-12-16 半導体集積回路
PCT/JP1984/000597 WO1985002716A1 (fr) 1983-12-16 1984-12-14 Circuit integre a semi-conducteurs

Publications (1)

Publication Number Publication Date
DE3484313D1 true DE3484313D1 (de) 1991-04-25

Family

ID=16996652

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585900191T Expired - Lifetime DE3484313D1 (de) 1983-12-16 1984-12-14 Integrierte halbleiterschaltung.

Country Status (5)

Country Link
US (1) US4670768A (de)
EP (1) EP0166003B1 (de)
JP (1) JPS60128654A (de)
DE (1) DE3484313D1 (de)
WO (1) WO1985002716A1 (de)

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US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5225697A (en) * 1984-09-27 1993-07-06 Texas Instruments, Incorporated dRAM cell and method
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US4788158A (en) * 1985-09-25 1988-11-29 Texas Instruments Incorporated Method of making vertical inverter
EP0261666B1 (de) * 1986-09-24 1992-08-05 Nec Corporation Komplementärer Feldeffekt-Transistor mit isoliertem Gate
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US5072276A (en) * 1986-10-08 1991-12-10 Texas Instruments Incorporated Elevated CMOS
JPS63239973A (ja) * 1986-10-08 1988-10-05 テキサス　インスツルメンツ　インコーポレイテツド 集積回路およびその製造方法
US4833094A (en) * 1986-10-17 1989-05-23 International Business Machines Corporation Method of making a dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
JPH0687500B2 (ja) * 1987-03-26 1994-11-02 日本電気株式会社 半導体記憶装置およびその製造方法
JPH0795568B2 (ja) * 1987-04-27 1995-10-11 日本電気株式会社 半導体記憶装置
US4910564A (en) * 1987-07-01 1990-03-20 Mitsubishi Denki Kabushiki Kaisha Highly integrated field effect transistor and method for manufacturing the same
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
JP2653095B2 (ja) * 1988-04-22 1997-09-10 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
US5103276A (en) * 1988-06-01 1992-04-07 Texas Instruments Incorporated High performance composed pillar dram cell
US4881105A (en) * 1988-06-13 1989-11-14 International Business Machines Corporation Integrated trench-transistor structure and fabrication process
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US4927779A (en) * 1988-08-10 1990-05-22 International Business Machines Corporation Complementary metal-oxide-semiconductor transistor and one-capacitor dynamic-random-access memory cell and fabrication process therefor
JP3057661B2 (ja) * 1988-09-06 2000-07-04 株式会社東芝 半導体装置
US5258635A (en) * 1988-09-06 1993-11-02 Kabushiki Kaisha Toshiba MOS-type semiconductor integrated circuit device
US5181088A (en) * 1988-09-14 1993-01-19 Kabushiki Kaisha Toshiba Vertical field effect transistor with an extended polysilicon channel region
US4920065A (en) * 1988-10-31 1990-04-24 International Business Machines Corporation Method of making ultra dense dram cells
US5346834A (en) * 1988-11-21 1994-09-13 Hitachi, Ltd. Method for manufacturing a semiconductor device and a semiconductor memory device
US5021355A (en) * 1989-05-22 1991-06-04 International Business Machines Corporation Method of fabricating cross-point lightly-doped drain-source trench transistor
US4954854A (en) * 1989-05-22 1990-09-04 International Business Machines Corporation Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
JP2804539B2 (ja) * 1989-09-28 1998-09-30 沖電気工業株式会社 半導体装置およびその製造方法
JPH03187272A (ja) * 1989-12-15 1991-08-15 Mitsubishi Electric Corp Ｍｏｓ型電界効果トランジスタ及びその製造方法
US5177027A (en) * 1990-08-17 1993-01-05 Micron Technology, Inc. Process for fabricating, on the edge of a silicon mesa, a MOSFET which has a spacer-shaped gate and a right-angled channel path
US5087581A (en) * 1990-10-31 1992-02-11 Texas Instruments Incorporated Method of forming vertical FET device with low gate to source overlap capacitance
US5073519A (en) * 1990-10-31 1991-12-17 Texas Instruments Incorporated Method of fabricating a vertical FET device with low gate to drain overlap capacitance
KR920010963A (ko) * 1990-11-23 1992-06-27 오가 노리오 Soi형 종채널 fet 및 그 제조방법
DE4101167A1 (de) * 1991-01-17 1992-07-23 Daimler Benz Ag Anordnung und verfahren zur herstellung komplementaerer feldeffekttransistoren
US5466961A (en) * 1991-04-23 1995-11-14 Canon Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US5283456A (en) * 1992-06-17 1994-02-01 International Business Machines Corporation Vertical gate transistor with low temperature epitaxial channel
DE4417150C2 (de) * 1994-05-17 1996-03-14 Siemens Ag Verfahren zur Herstellung einer Anordnung mit selbstverstärkenden dynamischen MOS-Transistorspeicherzellen
US5604368A (en) * 1994-07-15 1997-02-18 International Business Machines Corporation Self-aligned double-gate MOSFET by selective lateral epitaxy
JPH098290A (ja) * 1995-06-20 1997-01-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5757038A (en) * 1995-11-06 1998-05-26 International Business Machines Corporation Self-aligned dual gate MOSFET with an ultranarrow channel
US5885864A (en) * 1996-10-24 1999-03-23 Micron Technology, Inc. Method for forming compact memory cell using vertical devices
US5864158A (en) * 1997-04-04 1999-01-26 Advanced Micro Devices, Inc. Trench-gated vertical CMOS device
JPH10290007A (ja) * 1997-04-14 1998-10-27 Sharp Corp 半導体装置およびその製造方法
US6100123A (en) 1998-01-20 2000-08-08 International Business Machines Corporation Pillar CMOS structure
US6121651A (en) 1998-07-30 2000-09-19 International Business Machines Corporation Dram cell with three-sided-gate transfer device
US6027975A (en) * 1998-08-28 2000-02-22 Lucent Technologies Inc. Process for fabricating vertical transistors
US6197641B1 (en) * 1998-08-28 2001-03-06 Lucent Technologies Inc. Process for fabricating vertical transistors
US6204123B1 (en) 1998-10-30 2001-03-20 Sony Corporation Vertical floating gate transistor with epitaxial channel
US6459123B1 (en) * 1999-04-30 2002-10-01 Infineon Technologies Richmond, Lp Double gated transistor
US6472767B1 (en) 1999-04-30 2002-10-29 Infineon Technologies Ag Static random access memory (SRAM)
EP1063697B1 (de) * 1999-06-18 2003-03-12 Lucent Technologies Inc. Fertigungsverfahren zur Herstellung eines CMOS integrieten Schaltkreises mit vertikalen Transistoren
US6483171B1 (en) * 1999-08-13 2002-11-19 Micron Technology, Inc. Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming same
US6686604B2 (en) * 2001-09-21 2004-02-03 Agere Systems Inc. Multiple operating voltage vertical replacement-gate (VRG) transistor
US6461900B1 (en) * 2001-10-18 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form a self-aligned CMOS inverter using vertical device integration
US6773994B2 (en) * 2001-12-26 2004-08-10 Agere Systems Inc. CMOS vertical replacement gate (VRG) transistors
KR100673105B1 (ko) * 2005-03-31 2007-01-22 주식회사 하이닉스반도체 반도체 소자의 수직형 트랜지스터 및 그의 형성 방법
KR100734266B1 (ko) * 2005-07-15 2007-07-02 삼성전자주식회사 콘택 저항이 개선된 수직 채널 반도체 소자 및 그 제조방법
JP2008300623A (ja) * 2007-05-31 2008-12-11 Elpida Memory Inc 半導体装置及びその製造方法、並びに、データ処理システム
JP5430981B2 (ja) * 2009-03-17 2014-03-05 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びその製造方法
SG165252A1 (en) * 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
SG166752A1 (en) * 2009-05-22 2010-12-29 Unisantis Electronics Jp Ltd Semiconductor memory device and production method therefor
JP5032532B2 (ja) * 2009-06-05 2012-09-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5555452B2 (ja) * 2009-07-14 2014-07-23 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法並びにデータ処理システム
JP5006378B2 (ja) 2009-08-11 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5524547B2 (ja) 2009-09-14 2014-06-18 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体記憶装置
JP5006379B2 (ja) * 2009-09-16 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
US8575584B2 (en) 2011-09-03 2013-11-05 Avalanche Technology Inc. Resistive memory device having vertical transistors and method for making the same
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US11088033B2 (en) 2016-09-08 2021-08-10 International Business Machines Corporation Low resistance source-drain contacts using high temperature silicides
US9991267B1 (en) * 2017-01-25 2018-06-05 International Business Machines Corporation Forming eDRAM unit cell with VFET and via capacitance
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JPS5066184A (de) * 1973-10-12 1975-06-04
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Also Published As

Publication number Publication date
JPS60128654A (ja) 1985-07-09
EP0166003B1 (de) 1991-03-20
EP0166003A4 (de) 1987-06-29
WO1985002716A1 (fr) 1985-06-20
EP0166003A1 (de) 1986-01-02
US4670768A (en) 1987-06-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee