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DE68921368D1 - Gate-Abschalthalbleitereinrichtung. - Google Patents

Gate-Abschalthalbleitereinrichtung.

Info

Publication number
DE68921368D1
DE68921368D1 DE68921368T DE68921368T DE68921368D1 DE 68921368 D1 DE68921368 D1 DE 68921368D1 DE 68921368 T DE68921368 T DE 68921368T DE 68921368 T DE68921368 T DE 68921368T DE 68921368 D1 DE68921368 D1 DE 68921368D1
Authority
DE
Germany
Prior art keywords
semiconductor device
gate shutdown
shutdown semiconductor
gate
shutdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68921368T
Other languages
English (en)
Other versions
DE68921368T2 (de
Inventor
Bantval Jayant Baliga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE68921368D1 publication Critical patent/DE68921368D1/de
Application granted granted Critical
Publication of DE68921368T2 publication Critical patent/DE68921368T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/199—Anode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
DE68921368T 1988-05-02 1989-04-28 Gate-Abschalthalbleitereinrichtung. Expired - Lifetime DE68921368T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/188,888 US4982258A (en) 1988-05-02 1988-05-02 Metal oxide semiconductor gated turn-off thyristor including a low lifetime region

Publications (2)

Publication Number Publication Date
DE68921368D1 true DE68921368D1 (de) 1995-04-06
DE68921368T2 DE68921368T2 (de) 1995-10-05

Family

ID=22694977

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68921368T Expired - Lifetime DE68921368T2 (de) 1988-05-02 1989-04-28 Gate-Abschalthalbleitereinrichtung.

Country Status (4)

Country Link
US (1) US4982258A (de)
EP (1) EP0341000B1 (de)
JP (1) JPH0221661A (de)
DE (1) DE68921368T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243021A (en) * 1990-04-09 1991-10-16 Philips Electronic Associated Mos- gated thyristor
US5099300A (en) * 1990-06-14 1992-03-24 North Carolina State University Gated base controlled thyristor
US5177027A (en) * 1990-08-17 1993-01-05 Micron Technology, Inc. Process for fabricating, on the edge of a silicon mesa, a MOSFET which has a spacer-shaped gate and a right-angled channel path
US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
US5073519A (en) * 1990-10-31 1991-12-17 Texas Instruments Incorporated Method of fabricating a vertical FET device with low gate to drain overlap capacitance
GB2263579A (en) * 1992-01-24 1993-07-28 Texas Instruments Ltd An integrated circuit with intermingled electrodes
JPH07506933A (ja) * 1992-04-29 1995-07-27 ノース カロライナ ステイト ユニヴァーシティ 改良されたターンオフ特性を有するベース抵抗制御ｍｏｓゲートサイリスタ
US5317171A (en) * 1992-04-29 1994-05-31 North Carolina State University MOS gated thyristor with remote turn-off electrode
US5319222A (en) * 1992-04-29 1994-06-07 North Carolina State University MOS gated thyristor having on-state current saturation capability
JP3281145B2 (ja) * 1993-10-28 2002-05-13 株式会社東芝 Ｇｔｏサイリスタ
GB2292252A (en) * 1994-08-05 1996-02-14 Texas Instruments Ltd Rapid turn off semiconductor devices
US5493134A (en) * 1994-11-14 1996-02-20 North Carolina State University Bidirectional AC switching device with MOS-gated turn-on and turn-off control
DE19732912C2 (de) * 1997-07-30 2000-05-04 Siemens Ag Kaskoden-MOS-Thyristor
JP2001501383A (ja) 1997-07-30 2001-01-30 シーメンス アクチエンゲゼルシヤフト ゲート制御されるサイリスタ
US6239466B1 (en) * 1998-12-04 2001-05-29 General Electric Company Insulated gate bipolar transistor for zero-voltage switching
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
US6891205B1 (en) 2001-03-22 2005-05-10 T-Ram, Inc. Stability in thyristor-based memory device
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
US6462359B1 (en) 2001-03-22 2002-10-08 T-Ram, Inc. Stability in thyristor-based memory device
JP2002329727A (ja) * 2001-04-27 2002-11-15 Toyota Motor Corp 縦型半導体装置とそれを用いた回路
US6666481B1 (en) 2002-10-01 2003-12-23 T-Ram, Inc. Shunt connection to emitter
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports
JP4827960B2 (ja) * 2009-10-05 2011-11-30 株式会社リコー 画像形成装置、及び、現像装置
EP2812360B1 (de) * 2012-02-09 2022-08-31 Life Technologies Corporation Hydrophile polymerteilchen und verfahren zur herstellung davon
KR102226206B1 (ko) * 2020-02-06 2021-03-11 포항공과대학교 산학협력단 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1041931B (it) * 1974-09-06 1980-01-10 Rca Corp Raddrizzatore a semiconduttore commutabile allo stato di non conduzione per mezzo di una tensione applicata al proprio elettrodo di porta
JPS51147978A (en) * 1975-06-13 1976-12-18 Mitsubishi Electric Corp Semiconductor controlled rectifier
US4259683A (en) * 1977-02-07 1981-03-31 General Electric Company High switching speed P-N junction devices with recombination means centrally located in high resistivity layer
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
DE2917786C2 (de) * 1979-05-03 1983-07-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristortriode und Verfahren zu ihrer Herstellung
JPS6050067B2 (ja) * 1979-12-20 1985-11-06 富士電機株式会社 静電誘導形逆導通サイリスタ
SE423946B (sv) * 1980-10-08 1982-06-14 Asea Ab Tyristor anordnad for sjelvtendning
JPS5917547B2 (ja) * 1981-09-05 1984-04-21 財団法人半導体研究振興会 サイリスタ
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
US4568958A (en) * 1984-01-03 1986-02-04 General Electric Company Inversion-mode insulated-gate gallium arsenide field-effect transistors
US4752818A (en) * 1985-09-28 1988-06-21 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device with multiple recombination center layers
US4760432A (en) * 1985-11-04 1988-07-26 Siemens Aktiengesellschaft Thyristor having controllable emitter-base shorts
US4799095A (en) * 1987-07-06 1989-01-17 General Electric Company Metal oxide semiconductor gated turn off thyristor
US4827321A (en) * 1987-10-29 1989-05-02 General Electric Company Metal oxide semiconductor gated turn off thyristor including a schottky contact

Also Published As

Publication number Publication date
EP0341000A2 (de) 1989-11-08
EP0341000A3 (en) 1990-08-01
DE68921368T2 (de) 1995-10-05
US4982258A (en) 1991-01-01
JPH0221661A (ja) 1990-01-24
EP0341000B1 (de) 1995-03-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition