DE3773957D1 - Halbleitervorrichtung. - Google Patents

Halbleitervorrichtung.

Info

Publication number: DE3773957D1
Authority: DE; Germany
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1986-03-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8787102929T

Other languages

English (en)

Inventor

Kenji Kobayashi

Masataka Kondo

Kazunori Tsuge

Yoshihisa Tawada

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Kanegafuchi Chemical Industry Co Ltd

Original Assignee

Kanegafuchi Chemical Industry Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-03-03

Filing date

1987-03-02

Publication date

1991-11-28

1987-03-02 Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd

1991-11-28 Application granted granted Critical

1991-11-28 Publication of DE3773957D1 publication Critical patent/DE3773957D1/de

2007-03-03 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
- H10F77/1662—Amorphous semiconductors including only Group IV materials
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells

DE8787102929T 1986-03-03 1987-03-02 Halbleitervorrichtung. Expired - Fee Related DE3773957D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61047122A JPH0656883B2 (ja)	1986-03-03	1986-03-03	半導体装置

Publications (1)

Publication Number	Publication Date
DE3773957D1 true DE3773957D1 (de)	1991-11-28

Family

ID=12766350

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8787102929T Expired - Fee Related DE3773957D1 (de)	1986-03-03	1987-03-02	Halbleitervorrichtung.

Country Status (5)

Country	Link
US (1)	US4941032A (de)
EP (1)	EP0235785B1 (de)
JP (1)	JPH0656883B2 (de)
AU (1)	AU600472B2 (de)
DE (1)	DE3773957D1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH036867A (ja) *	1989-06-05	1991-01-14	Mitsubishi Electric Corp	光発電素子の電極構造、形成方法、及びその製造装置
DE4023495A1 (de) *	1990-07-24	1992-01-30	Nukem Gmbh	Elektronisches bauelement
US5500301A (en) *	1991-03-07	1996-03-19	Kabushiki Kaisha Kobe Seiko Sho	A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films
JP3061654B2 (ja) *	1991-04-23	2000-07-10	株式会社神戸製鋼所	液晶ディスプレイ用半導体装置材料及び液晶ディスプレイ用半導体装置材料製造用溶製スパッタリングターゲット材料
AU662360B2 (en) *	1991-10-22	1995-08-31	Canon Kabushiki Kaisha	Photovoltaic device
JP2837302B2 (ja) *	1991-12-04	1998-12-16	シャープ株式会社	太陽電池
JP2733006B2 (ja) *	1993-07-27	1998-03-30	株式会社神戸製鋼所	半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット
JP3792281B2 (ja) *	1995-01-09	2006-07-05	株式会社半導体エネルギー研究所	太陽電池
EP1553205B1 (de)	1995-10-12	2017-01-25	Kabushiki Kaisha Toshiba	Sputtertarget zur Dünnschicht-Leitungherstellung und Dünnschicht-Leitung
USRE45481E1 (en) *	1995-10-12	2015-04-21	Kabushiki Kaisha Toshiba	Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same
US5986204A (en) *	1996-03-21	1999-11-16	Canon Kabushiki Kaisha	Photovoltaic cell
JP3106956B2 (ja) *	1996-05-23	2000-11-06	住友化学工業株式会社	化合物半導体用電極材料
US6124205A (en)	1998-09-03	2000-09-26	Micron Technology, Inc.	Contact/via force fill process
US6949464B1 (en) *	1998-09-03	2005-09-27	Micron Technology, Inc.	Contact/via force fill techniques
FR2805395B1 (fr) *	2000-02-23	2002-05-10	Centre Nat Rech Scient	Transistor mos pour circuits a haute densite d'integration
JP4117001B2 (ja)	2005-02-17	2008-07-09	株式会社神戸製鋼所	薄膜トランジスタ基板、表示デバイス、および表示デバイス用のスパッタリングターゲット
JP4948778B2 (ja) *	2005-03-30	2012-06-06	Ｔｄｋ株式会社	太陽電池およびその色調整方法
WO2007102988A2 (en) *	2006-03-06	2007-09-13	Tosoh Smd, Inc.	Electronic device, method of manufacture of same and sputtering target
US20090008786A1 (en) *	2006-03-06	2009-01-08	Tosoh Smd, Inc.	Sputtering Target
WO2008047580A1 (en) *	2006-09-28	2008-04-24	Kyocera Corporation	Solar battery element and method for manufacturing the same
KR20080069448A (ko) *	2007-01-23	2008-07-28	엘지전자 주식회사	측면결정화 공정을 이용한 고효율 광기전력 변환소자 모듈및 그의 제조방법
CN115394864A (zh) *	2022-03-11	2022-11-25	浙江爱旭太阳能科技有限公司	太阳能电池的导电接触结构、组件及发电系统

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4392010A (en) *	1979-01-16	1983-07-05	Solarex Corporation	Photovoltaic cells having contacts and method of applying same
US4433004A (en) *	1979-07-11	1984-02-21	Tokyo Shibaura Denki Kabushiki Kaisha	Semiconductor device and a method for manufacturing the same
US4375007A (en) *	1980-11-26	1983-02-22	E. I. Du Pont De Nemours & Co.	Silicon solar cells with aluminum-magnesium alloy low resistance contacts
JPS57104184A (en) *	1980-12-19	1982-06-29	Nippon Electric Co	Position display system
US4471376A (en) *	1981-01-14	1984-09-11	Harris Corporation	Amorphous devices and interconnect system and method of fabrication
JPS5839072A (ja) *	1981-08-31	1983-03-07	Sanyo Electric Co Ltd	非晶質光半導体装置
JPS5898985A (ja) *	1981-12-09	1983-06-13	Seiko Epson Corp	薄膜太陽電池
IL67926A (en) *	1982-03-18	1986-04-29	Energy Conversion Devices Inc	Photo-voltaic device with radiation reflector means
JPS58178573A (ja) *	1982-04-12	1983-10-19	Sanyo Electric Co Ltd	非晶質半導体装置
DE3242835A1 (de) *	1982-11-19	1984-05-24	Siemens AG, 1000 Berlin und 8000 München	Solarzelle aus amorphem silizium
DE3244461A1 (de) *	1982-12-01	1984-06-07	Siemens AG, 1000 Berlin und 8000 München	Integrierte halbleiterschaltung mit einer aus einer aluminium/silizium-legierung bestehenden kontaktleiterbahnebene
JPS59232456A (ja) *	1983-06-16	1984-12-27	Hitachi Ltd	薄膜回路素子
JPS6030183A (ja) *	1983-07-28	1985-02-15	Fuji Electric Corp Res & Dev Ltd	薄膜太陽電池
JPS6083382A (ja) *	1983-10-14	1985-05-11	Hitachi Ltd	半導体装置及びその製造方法
US4510344A (en) *	1983-12-19	1985-04-09	Atlantic Richfield Company	Thin film solar cell substrate
JPS60140881A (ja) *	1983-12-28	1985-07-25	Hitachi Ltd	太陽電池の製造方法
JPS60147171A (ja) *	1984-01-12	1985-08-03	Hitachi Maxell Ltd	光起電力装置
JPS60239069A (ja) *	1984-05-11	1985-11-27	Sanyo Electric Co Ltd	非晶質太陽電池
US4694317A (en) *	1984-10-22	1987-09-15	Fuji Photo Film Co., Ltd.	Solid state imaging device and process for fabricating the same

1986
- 1986-03-03 JP JP61047122A patent/JPH0656883B2/ja not_active Expired - Lifetime
1987
- 1987-02-26 AU AU69298/87A patent/AU600472B2/en not_active Ceased
- 1987-03-02 EP EP87102929A patent/EP0235785B1/de not_active Expired - Lifetime
- 1987-03-02 DE DE8787102929T patent/DE3773957D1/de not_active Expired - Fee Related
1989
- 1989-01-13 US US07/298,279 patent/US4941032A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPH0656883B2 (ja)	1994-07-27
JPS62203369A (ja)	1987-09-08
EP0235785B1 (de)	1991-10-23
EP0235785A3 (en)	1989-03-22
AU600472B2 (en)	1990-08-16
EP0235785A2 (de)	1987-09-09
US4941032A (en)	1990-07-10
AU6929887A (en)	1987-09-10

Publication	Publication Date	Title
DE3850855D1 (de)	1994-09-01	Halbleitervorrichtung.
DE3650012D1 (de)	1994-09-08	Halbleitervorrichtung.
DE3687795D1 (de)	1993-03-25	Halbleiterbehandlungsvorrichtung.
DE3787769D1 (de)	1993-11-18	Halbleiterlaservorrichtung.
DE3763336D1 (de)	1990-07-26	Tragevorrichtung.
NL189326C (nl)	1993-03-01	Halfgeleiderinrichting.
DE3750110D1 (de)	1994-07-28	Lagebestimmungsgerät.
DE68917848D1 (de)	1994-10-06	Halbleiteranordnung.
DE3688064D1 (de)	1993-04-22	Halbleitervorrichtung.
DE3750995D1 (de)	1995-03-02	Halbleiterlaservorrichtung.
DE3786339D1 (de)	1993-07-29	Halbleiterlaservorrichtung.
DE3584799D1 (de)	1992-01-16	Halbleitervorrichtung.
DE68921421D1 (de)	1995-04-06	Halbleitervorrichtung.
DE3773957D1 (de)	1991-11-28	Halbleitervorrichtung.
DE3770953D1 (de)	1991-08-01	Halbleiterspeichervorrichtungen.
DE3770720D1 (de)	1991-07-18	Halbleiterkamera.
DE3581370D1 (de)	1991-02-21	Halbleitervorrichtung.
DE3773433D1 (de)	1991-11-07	Abisolierfreie verbindungsvorrichtung.
DE3889354D1 (de)	1994-06-09	Halbleiteranordnung.
DE3789783D1 (de)	1994-06-16	Halbleiterspeicheranordnung.
DE3789832D1 (de)	1994-06-23	Halbleiterlaser-Vorrichtung.
DE3586568D1 (de)	1992-10-08	Halbleitereinrichtung.
DE3776186D1 (de)	1992-03-05	Halbleiterlaser-vorrichtung.
DE3751342D1 (de)	1995-07-20	Halbleiter-Bildaufnahmevorrichtung.
DE3783507D1 (de)	1993-02-25	Zusammengesetztes halbleiterbauelement.

Legal Events

Date	Code	Title	Description
1992-11-19	8364	No opposition during term of opposition
2007-01-18	8339	Ceased/non-payment of the annual fee