NL191814C - Halfgeleidergeheugeninrichting. - Google Patents

Halfgeleidergeheugeninrichting.

Info

Publication number: NL191814C
Authority: NL; Netherlands
Prior art keywords: memory device; semiconductor memory; semiconductor; memory
Prior art date: 1988-02-15

Application number

NL8803189A

Other languages

English (en)

Other versions

NL191814B (nl

NL8803189A (nl

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-02-15

Filing date

1988-12-28

Publication date

1996-08-02

1988-12-28 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1989-09-01 Publication of NL8803189A publication Critical patent/NL8803189A/nl

1996-04-01 Publication of NL191814B publication Critical patent/NL191814B/nl

1996-08-02 Application granted granted Critical

1996-08-02 Publication of NL191814C publication Critical patent/NL191814C/nl

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/01—Manufacture or treatment
- H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
- H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
- H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Semiconductor Memories (AREA)
Semiconductor Integrated Circuits (AREA)

NL8803189A 1988-02-15 1988-12-28 Halfgeleidergeheugeninrichting. NL191814C (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR880001556		1988-02-15
KR1019880001556A KR910000246B1 (ko)	1988-02-15	1988-02-15	반도체 메모리장치

Publications (3)

Publication Number	Publication Date
NL8803189A NL8803189A (nl)	1989-09-01
NL191814B NL191814B (nl)	1996-04-01
NL191814C true NL191814C (nl)	1996-08-02

Family

ID=19272250

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8803189A NL191814C (nl)	1988-02-15	1988-12-28	Halfgeleidergeheugeninrichting.

Country Status (7)

Country	Link
US (1)	US5432365A (nl)
JP (1)	JP2510265B2 (nl)
KR (1)	KR910000246B1 (nl)
DE (1)	DE3844388A1 (nl)
FR (1)	FR2627326A1 (nl)
GB (1)	GB2215913B (nl)
NL (1)	NL191814C (nl)

Families Citing this family (47)

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JP2936659B2 (ja) *	1990-06-28	1999-08-23	日本電気株式会社	ダイナミック型メモリ装置
JP2994110B2 (ja) *	1991-09-09	1999-12-27	株式会社東芝	半導体記憶装置
KR100231140B1 (ko) *	1991-12-16	1999-11-15	문정환	Dram셀의트랜치캐패시터제조방법
US5264716A (en) *	1992-01-09	1993-11-23	International Business Machines Corporation	Diffused buried plate trench dram cell array
US5250829A (en) *	1992-01-09	1993-10-05	International Business Machines Corporation	Double well substrate plate trench DRAM cell array
JPH07112049B2 (ja) *	1992-01-09	1995-11-29	インターナショナル・ビジネス・マシーンズ・コーポレイション	ダイナミック・ランダム・アクセス・メモリ・デバイスおよび製造方法
JP2904635B2 (ja) *	1992-03-30	1999-06-14	株式会社東芝	半導体装置およびその製造方法
JPH0637275A (ja) *	1992-07-13	1994-02-10	Toshiba Corp	半導体記憶装置及びその製造方法
JP3268158B2 (ja) *	1995-03-31	2002-03-25	株式会社東芝	半導体装置およびその製造方法
DE19620625C1 (de) *	1996-05-22	1997-10-23	Siemens Ag	DRAM-Zellenanordnung und Verfahren zu deren Herstellung
US5885863A (en) *	1997-03-31	1999-03-23	Kabushiki Kaisha Toshiba	Method of making a contact for contacting an impurity region formed in a semiconductor substrate
US7067406B2 (en) *	1997-03-31	2006-06-27	Intel Corporation	Thermal conducting trench in a semiconductor structure and method for forming the same
US6222254B1 (en) *	1997-03-31	2001-04-24	Intel Corporation	Thermal conducting trench in a semiconductor structure and method for forming the same
US5998821A (en) *	1997-05-21	1999-12-07	Kabushiki Kaisha Toshiba	Dynamic ram structure having a trench capacitor
US5981332A (en) *	1997-09-30	1999-11-09	Siemens Aktiengesellschaft	Reduced parasitic leakage in semiconductor devices
US5943581A (en) *	1997-11-05	1999-08-24	Vanguard International Semiconductor Corporation	Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits
US5976945A (en) *	1997-11-20	1999-11-02	Vanguard International Semiconductor Corporation	Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor
US6008103A (en) *	1998-02-27	1999-12-28	Siemens Aktiengesellschaft	Method for forming trench capacitors in an integrated circuit
US6008104A (en) *	1998-04-06	1999-12-28	Siemens Aktiengesellschaft	Method of fabricating a trench capacitor with a deposited isolation collar
US6259129B1 (en) *	1999-04-20	2001-07-10	International Business Machines Corporation	Strap with intrinsically conductive barrier
US6380575B1 (en)	1999-08-31	2002-04-30	International Business Machines Corporation	DRAM trench cell
US6472702B1 (en) *	2000-02-01	2002-10-29	Winbond Electronics Corporation	Deep trench DRAM with SOI and STI
US6404000B1 (en)	2000-06-22	2002-06-11	International Business Machines Corporation	Pedestal collar structure for higher charge retention time in trench-type DRAM cells
US6313008B1 (en)	2001-01-25	2001-11-06	Chartered Semiconductor Manufacturing Inc.	Method to form a balloon shaped STI using a micro machining technique to remove heavily doped silicon
US6882000B2 (en)	2001-08-10	2005-04-19	Siliconix Incorporated	Trench MIS device with reduced gate-to-drain capacitance
DE10149199B4 (de) *	2001-10-05	2006-05-18	Infineon Technologies Ag	Speicherzellenfeld und Verfahren zu seiner Herstellung
DE10220584B3 (de) *	2002-05-08	2004-01-08	Infineon Technologies Ag	Dynamische Speicherzelle und Verfahren zum Herstellen derselben
DE10245534B4 (de)	2002-09-30	2005-12-22	Infineon Technologies Ag	Teststruktur zum Bestimmen eines Bereiches einer Deep-Trench-Ausdiffusion in einem Speicherzellenfeld
US7518179B2 (en)	2004-10-08	2009-04-14	Freescale Semiconductor, Inc.	Virtual ground memory array and method therefor
US7619275B2 (en) *	2005-07-25	2009-11-17	Freescale Semiconductor, Inc.	Process for forming an electronic device including discontinuous storage elements
US7314798B2 (en) *	2005-07-25	2008-01-01	Freescale Semiconductor, Inc.	Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7112490B1 (en) *	2005-07-25	2006-09-26	Freescale Semiconductor, Inc.	Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7250340B2 (en) *	2005-07-25	2007-07-31	Freescale Semiconductor, Inc.	Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench
US7582929B2 (en) *	2005-07-25	2009-09-01	Freescale Semiconductor, Inc	Electronic device including discontinuous storage elements
US7226840B2 (en) *	2005-07-25	2007-06-05	Freescale Semiconductor, Inc.	Process for forming an electronic device including discontinuous storage elements
US7394686B2 (en) *	2005-07-25	2008-07-01	Freescale Semiconductor, Inc.	Programmable structure including discontinuous storage elements and spacer control gates in a trench
US20070020840A1 (en) *	2005-07-25	2007-01-25	Freescale Semiconductor, Inc.	Programmable structure including nanocrystal storage elements in a trench
US7642594B2 (en) *	2005-07-25	2010-01-05	Freescale Semiconductor, Inc	Electronic device including gate lines, bit lines, or a combination thereof
US7619270B2 (en) *	2005-07-25	2009-11-17	Freescale Semiconductor, Inc.	Electronic device including discontinuous storage elements
US7256454B2 (en) *	2005-07-25	2007-08-14	Freescale Semiconductor, Inc	Electronic device including discontinuous storage elements and a process for forming the same
US7285819B2 (en) *	2005-07-25	2007-10-23	Freescale Semiconductor, Inc.	Nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7262997B2 (en) *	2005-07-25	2007-08-28	Freescale Semiconductor, Inc.	Process for operating an electronic device including a memory array and conductive lines
US7592224B2 (en)	2006-03-30	2009-09-22	Freescale Semiconductor, Inc	Method of fabricating a storage device including decontinuous storage elements within and between trenches
US7572699B2 (en) *	2007-01-24	2009-08-11	Freescale Semiconductor, Inc	Process of forming an electronic device including fins and discontinuous storage elements
US7838922B2 (en) *	2007-01-24	2010-11-23	Freescale Semiconductor, Inc.	Electronic device including trenches and discontinuous storage elements
US7651916B2 (en) *	2007-01-24	2010-01-26	Freescale Semiconductor, Inc	Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
KR101967525B1 (ko) *	2017-04-14	2019-04-09	포항공과대학교 산학협력단	다중 레벨의 전하 저장이 가능한 반도체 소자

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US4353086A (en) *	1980-05-07	1982-10-05	Bell Telephone Laboratories, Incorporated	Silicon integrated circuits
JPS58137245A (ja) *	1982-02-10	1983-08-15	Hitachi Ltd	大規模半導体メモリ
JPS5982761A (ja) *	1982-11-04	1984-05-12	Hitachi Ltd	半導体メモリ
JPS60128658A (ja) *	1983-12-15	1985-07-09	Toshiba Corp	半導体記憶装置
EP0169938B1 (en) *	1983-12-15	1989-03-29	Kabushiki Kaisha Toshiba	Semiconductor memory device having trenched capacitor
JPS60152058A (ja) *	1984-01-20	1985-08-10	Toshiba Corp	半導体記憶装置
JPS60154664A (ja) *	1984-01-25	1985-08-14	Hitachi Ltd	半導体記憶装置
JPS60206163A (ja) *	1984-03-30	1985-10-17	Toshiba Corp	半導体記憶装置
KR900000170B1 (ko) *	1984-06-05	1990-01-23	가부시끼가이샤 도오시바	다이내믹형 메모리셀과 그 제조방법
US5170234A (en) *	1984-07-03	1992-12-08	Texas Instruments Incorporated	High density dynamic RAM with trench capacitor
JPS6190395A (ja) *	1984-10-09	1986-05-08	Fujitsu Ltd	半導体記憶装置
JPS61179568A (ja) *	1984-12-29	1986-08-12	Fujitsu Ltd	半導体記憶装置の製造方法
DE3681490D1 (de) *	1985-04-01	1991-10-24	Nec Corp	Dynamische speicheranordnung mit wahlfreiem zugriff mit einer vielzahl von eintransistorspeicherzellen.
JPS61280651A (ja) *	1985-05-24	1986-12-11	Fujitsu Ltd	半導体記憶装置
US4801989A (en) *	1986-02-20	1989-01-31	Fujitsu Limited	Dynamic random access memory having trench capacitor with polysilicon lined lower electrode
JPH0685428B2 (ja) *	1986-03-14	1994-10-26	富士通株式会社	ダイナミツクランダムアクセスメモリ
JPS62208663A (ja) *	1986-03-07	1987-09-12	Sony Corp	半導体記憶装置の製造方法
JPS62249473A (ja) *	1986-04-23	1987-10-30	Hitachi Ltd	半導体記憶装置
US4918502A (en) *	1986-11-28	1990-04-17	Hitachi, Ltd.	Semiconductor memory having trench capacitor formed with sheath electrode
GB2199695B (en) *	1987-01-06	1990-07-25	Samsung Semiconductor Inc	Dynamic random access memory with selective well biasing
DE3851649T2 (de) *	1987-03-20	1995-05-04	Nippon Electric Co	Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff.
JP2517015B2 (ja) *	1987-11-06	1996-07-24	シャープ株式会社	半導体メモリの製造方法

1988
- 1988-02-15 KR KR1019880001556A patent/KR910000246B1/ko not_active IP Right Cessation
- 1988-12-26 JP JP63326412A patent/JP2510265B2/ja not_active Expired - Lifetime
- 1988-12-28 NL NL8803189A patent/NL191814C/nl not_active IP Right Cessation
- 1988-12-29 FR FR8817424A patent/FR2627326A1/fr active Granted
- 1988-12-30 DE DE3844388A patent/DE3844388A1/de active Granted
1989
- 1989-01-06 GB GB8900281A patent/GB2215913B/en not_active Expired - Lifetime
1993
- 1993-03-09 US US08/038,842 patent/US5432365A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
KR890013775A (ko)	1989-09-26
FR2627326B1 (nl)	1995-03-10
DE3844388A1 (de)	1989-08-24
GB8900281D0 (en)	1989-03-08
GB2215913A (en)	1989-09-27
JPH027465A (ja)	1990-01-11
GB2215913B (en)	1991-05-15
JP2510265B2 (ja)	1996-06-26
NL191814B (nl)	1996-04-01
KR910000246B1 (ko)	1991-01-23
DE3844388C2 (nl)	1993-01-21
NL8803189A (nl)	1989-09-01
FR2627326A1 (fr)	1989-08-18
US5432365A (en)	1995-07-11

Publication	Publication Date	Title
NL191814C (nl)	1996-08-02	Halfgeleidergeheugeninrichting.
DE68923505D1 (de)	1995-08-24	Halbleiterspeicheranordnung.
DE3889097D1 (de)	1994-05-19	Halbleiterspeicheranordnung.
DE68911044D1 (de)	1994-01-13	Halbleiterspeicher.
DE68926811D1 (de)	1996-08-14	Halbleiterspeicheranordnung
DE3875767D1 (de)	1992-12-17	Halbleiter-festwertspeichereinrichtung.
DE68918367D1 (de)	1994-10-27	Halbleiterspeicheranordnung.
DE3887224D1 (de)	1994-03-03	Halbleiterspeicheranordnung.
DE68917848D1 (de)	1994-10-06	Halbleiteranordnung.
DE69007827D1 (de)	1994-05-11	Halbleiter-Speicher.
DE69016153D1 (de)	1995-03-02	Nichtflüchtige Halbleiterspeicheranordnung.
DE3884022D1 (de)	1993-10-21	Halbleiterspeicheranordnung.
DE68921421D1 (de)	1995-04-06	Halbleitervorrichtung.
DE69022537D1 (de)	1995-10-26	Halbleiterspeicheranordnung.
DE68923588D1 (de)	1995-08-31	Halbleiterspeicheranordnung.
DE3889872D1 (de)	1994-07-07	Halbleiterspeicheranordnung.
DE68918193D1 (de)	1994-10-20	Halbleiterspeicher.
DE68920946D1 (de)	1995-03-16	Halbleiter-Speichereinrichtung.
DE69017518D1 (de)	1995-04-13	Halbleiterspeicheranordnung.
DE3865702D1 (de)	1991-11-28	Halbleiter-festwertspeichereinrichtung.
DE68924080D1 (de)	1995-10-12	Halbleiterspeichervorrichtung.
DE68923899D1 (de)	1995-09-28	Halbleiterspeicher.
DE3789783D1 (de)	1994-06-16	Halbleiterspeicheranordnung.
NL194178B (nl)	2001-04-02	Halfgeleidergeheugeneenheid.
DE3876666D1 (de)	1993-01-28	Halbleiter-festwertspeichereinrichtung.

Legal Events

Date	Code	Title	Description
1989-09-01	A1A	A request for search or an international-type search has been filed
1991-03-01	BB	A search report has been drawn up
1991-05-01	BC	A request for examination has been filed
1996-03-01	BV	The patent application has lapsed
2009-03-02	V4	Discontinued because of reaching the maximum lifetime of a patent	Effective date: 20081228