DE68920130D1 - Flüssigkristallanzeige mit aktiver Matrix. - Google Patents

Flüssigkristallanzeige mit aktiver Matrix.

Info

Publication number: DE68920130D1
Authority: DE; Germany
Prior art keywords: liquid crystal; crystal display; active matrix; matrix; active
Prior art date: 1988-08-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE68920130T

Other languages

English (en)

Other versions

DE68920130T2 (de

Inventor

Hiroaki Kato

Toshihiko Hirobe

Yoshitaka Hibino

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-08-10

Filing date

1989-08-10

Publication date

1995-02-02

1989-08-10 Application filed by Sharp Corp filed Critical Sharp Corp

1995-02-02 Publication of DE68920130D1 publication Critical patent/DE68920130D1/de

1995-06-22 Application granted granted Critical

1995-06-22 Publication of DE68920130T2 publication Critical patent/DE68920130T2/de

2009-08-11 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode

Landscapes

Physics & Mathematics (AREA)
Nonlinear Science (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Mathematical Physics (AREA)
Chemical & Material Sciences (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
General Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Liquid Crystal (AREA)
Thin Film Transistor (AREA)
Liquid Crystal Display Device Control (AREA)
Devices For Indicating Variable Information By Combining Individual Elements (AREA)

DE68920130T 1988-08-10 1989-08-10 Flüssigkristallanzeige mit aktiver Matrix. Expired - Fee Related DE68920130T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP20078288A JPH0816756B2 (ja)	1988-08-10	1988-08-10	透過型アクティブマトリクス液晶表示装置

Publications (2)

Publication Number	Publication Date
DE68920130D1 true DE68920130D1 (de)	1995-02-02
DE68920130T2 DE68920130T2 (de)	1995-06-22

Family

ID=16430101

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE68920130T Expired - Fee Related DE68920130T2 (de)	1988-08-10	1989-08-10	Flüssigkristallanzeige mit aktiver Matrix.

Country Status (4)

Country	Link
US (1)	US5054887A (de)
EP (1)	EP0376437B1 (de)
JP (1)	JPH0816756B2 (de)
DE (1)	DE68920130T2 (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2620240B2 (ja) *	1987-06-10	1997-06-11	株式会社日立製作所	液晶表示装置
US5231039A (en) *	1988-02-25	1993-07-27	Sharp Kabushiki Kaisha	Method of fabricating a liquid crystal display device
US5225364A (en) *	1989-06-26	1993-07-06	Oki Electric Industry Co., Ltd.	Method of fabricating a thin-film transistor matrix for an active matrix display panel
JP3009438B2 (ja) *	1989-08-14	2000-02-14	株式会社日立製作所	液晶表示装置
DE69117785T2 (de) *	1990-03-27	1997-02-06	Canon Kk	Dünnschicht-Halbleiterbauelement
FR2662290B1 (fr) *	1990-05-15	1992-07-24	France Telecom	Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.
JP3226223B2 (ja) *	1990-07-12	2001-11-05	株式会社東芝	薄膜トランジスタアレイ装置および液晶表示装置
JPH0475034A (ja) *	1990-07-17	1992-03-10	Sharp Corp	アクティブマトリクス表示装置及びその製造方法
US5153142A (en) *	1990-09-04	1992-10-06	Industrial Technology Research Institute	Method for fabricating an indium tin oxide electrode for a thin film transistor
US5402254B1 (en) *	1990-10-17	1998-09-22	Hitachi Ltd	Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon
JP3024661B2 (ja) *	1990-11-09	2000-03-21	セイコーエプソン株式会社	アクティブマトリクス基板及びその製造方法
US5206749A (en)	1990-12-31	1993-04-27	Kopin Corporation	Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5666175A (en) *	1990-12-31	1997-09-09	Kopin Corporation	Optical systems for displays
US5362671A (en) *	1990-12-31	1994-11-08	Kopin Corporation	Method of fabricating single crystal silicon arrayed devices for display panels
US5528397A (en) *	1991-12-03	1996-06-18	Kopin Corporation	Single crystal silicon transistors for display panels
EP0499979A3 (en)	1991-02-16	1993-06-09	Semiconductor Energy Laboratory Co., Ltd.	Electro-optical device
JP2873632B2 (ja)	1991-03-15	1999-03-24	株式会社半導体エネルギー研究所	半導体装置
US6713783B1 (en)	1991-03-15	2004-03-30	Semiconductor Energy Laboratory Co., Ltd.	Compensating electro-optical device including thin film transistors
JPH0572553A (ja) *	1991-09-11	1993-03-26	Hitachi Ltd	液晶表示装置およびその製造方法
US6979840B1 (en) *	1991-09-25	2005-12-27	Semiconductor Energy Laboratory Co., Ltd.	Thin film transistors having anodized metal film between the gate wiring and drain wiring
JP2907629B2 (ja) *	1992-04-10	1999-06-21	松下電器産業株式会社	液晶表示パネル
JP3245959B2 (ja) *	1992-06-05	2002-01-15	松下電器産業株式会社	液晶画像表示装置の製造方法
JPH05341315A (ja) *	1992-06-08	1993-12-24	Hitachi Ltd	薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置
US5707746A (en) *	1992-09-25	1998-01-13	Sharp Kabushiki Kaisha	Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer
JP2924506B2 (ja) *	1992-10-27	1999-07-26	日本電気株式会社	アクティブマトリックス型液晶表示装置の画素構造
CA2150573A1 (en) *	1992-12-01	1994-06-09	David Waechter	Thin film transistor having a triple layer dielectric gate insulator, method of fabricating such a thin film transistor and an active matrix display having a plurality of such thin film transistors
JP3098345B2 (ja) *	1992-12-28	2000-10-16	富士通株式会社	薄膜トランジスタマトリクス装置及びその製造方法
DE4339721C1 (de) *	1993-11-22	1995-02-02	Lueder Ernst	Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren
US5483366A (en) *	1994-07-20	1996-01-09	David Sarnoff Research Center Inc	LCD with hige capacitance pixel having an ITO active region/poly SI pixel region electrical connection and having poly SI selection line extensions along pixel edges
JPH08172202A (ja) *	1994-12-20	1996-07-02	Sharp Corp	薄膜トランジスタおよびその製造方法
JP2900229B2 (ja)	1994-12-27	1999-06-02	株式会社半導体エネルギー研究所	半導体装置およびその作製方法および電気光学装置
KR0145900B1 (ko) *	1995-02-11	1998-09-15	김광호	박막 트랜지스터 액정디스플레이 소자 및 그 제조방법
US5834327A (en) *	1995-03-18	1998-11-10	Semiconductor Energy Laboratory Co., Ltd.	Method for producing display device
KR100303134B1 (ko) *	1995-05-09	2002-11-23	엘지.필립스 엘시디 주식회사	액정표시소자및그제조방법.
FR2737314B1 (fr) *	1995-07-28	1997-08-29	Thomson Lcd	Procede de fabrication d'une matrice active pour ecran plat, ecran a cristaux liquides comportant une matrice active obtenue selon ledit procede et procede d'adressage d'un tel ecran
KR100205388B1 (ko) *	1995-09-12	1999-07-01	구자홍	액정표시장치 및 그 제조방법
JPH09236826A (ja) *	1995-09-28	1997-09-09	Sharp Corp	液晶表示素子およびその製造方法
EP1338914A3 (de)	1995-11-21	2003-11-19	Samsung Electronics Co., Ltd.	Verfahren zur Herstellung von Flüssigkristallanzeigevorrichtungen
KR100190041B1 (ko) *	1995-12-28	1999-06-01	윤종용	액정표시장치의 제조방법
JP3205501B2 (ja) *	1996-03-12	2001-09-04	シャープ株式会社	アクティブマトリクス表示装置およびその修正方法
US6383899B1 (en)	1996-04-05	2002-05-07	Sharp Laboratories Of America, Inc.	Method of forming polycrystalline semiconductor film from amorphous deposit by modulating crystallization with a combination of pre-annealing and ion implantation
JPH1010583A (ja) *	1996-04-22	1998-01-16	Sharp Corp	アクティブマトリクス基板の製造方法、およびそのアクティブマトリクス基板
KR100209620B1 (ko) *	1996-08-31	1999-07-15	구자홍	액정 표시 장치 및 그 제조방법
KR100241287B1 (ko) *	1996-09-10	2000-02-01	구본준	액정표시소자 제조방법
JPH10229197A (ja) *	1997-02-17	1998-08-25	Sanyo Electric Co Ltd	薄膜トランジスタ、薄膜トランジスタの製造方法
JP3376379B2 (ja) *	1997-02-20	2003-02-10	富士通ディスプレイテクノロジーズ株式会社	液晶表示パネル、液晶表示装置及びその製造方法
JP3592535B2 (ja) *	1998-07-16	2004-11-24	株式会社半導体エネルギー研究所	半導体装置の作製方法
US6124164A (en) *	1998-09-17	2000-09-26	Micron Technology, Inc.	Method of making integrated capacitor incorporating high K dielectric
JP2000275663A (ja) *	1999-03-26	2000-10-06	Hitachi Ltd	液晶表示装置とその製造方法
JP4744757B2 (ja) *	1999-07-21	2011-08-10	イーインクコーポレイション	アクティブマトリクス駆動電子ディスプレイの性能を高めるための蓄電キャパシタの使用
KR100647775B1 (ko) *	2004-12-01	2006-11-23	엘지.필립스 엘시디 주식회사	박막 트랜지스터 기판 및 제조 방법
TWI257646B (en) *	2005-09-05	2006-07-01	Innolux Display Corp	Thin film transistor array substrate and method of manufacturing the same
KR100962795B1 (ko)	2005-12-26	2010-06-10	샤프 가부시키가이샤	액티브 매트릭스 기판, 표시 장치, ｔｖ 수상기
TWI304655B (en) *	2006-04-07	2008-12-21	Innolux Display Corp	Thin film transistor and method of manufacturing the same
CN100529866C (zh) *	2006-04-19	2009-08-19	群康科技(深圳)有限公司	液晶显示器制造方法
TWI339303B (en) *	2006-12-15	2011-03-21	Chimei Innolux Corp	Liquid crystal panel
JP5182993B2 (ja) *	2008-03-31	2013-04-17	株式会社半導体エネルギー研究所	表示装置及びその作製方法
WO2011070901A1 (en) *	2009-12-11	2011-06-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method thereof
JP5735255B2 (ja)	2010-10-28	2015-06-17	株式会社ハイレックスコーポレーション	係留装置及びそれを用いたステアリング係留機構
TWI422940B (zh) *	2010-12-16	2014-01-11	Innolux Corp	陣列基板的形成方法
CN110797353A (zh) *	2019-11-12	2020-02-14	京东方科技集团股份有限公司	阵列基板、显示面板和显示装置

Family Cites Families (9)

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Publication number	Priority date	Publication date	Assignee	Title
US3671820A (en) *	1970-04-27	1972-06-20	Rudolph R Haering	High voltage thin-film transistor
JPS5922029A (ja) *	1982-07-28	1984-02-04	Matsushita Electric Ind Co Ltd	マトリクス表示パネルの製造方法
JPS6045219A (ja) *	1983-08-23	1985-03-11	Toshiba Corp	アクテイブマトリクス型表示装置
GB2169746B (en) *	1984-11-13	1988-09-14	Sharp Kk	Thin film transistor
US4571816A (en) *	1984-12-11	1986-02-25	Rca Corporation	Method of making a capacitor with standard self-aligned gate process
JPS62285464A (ja) *	1986-06-03	1987-12-11	Matsushita Electric Ind Co Ltd	薄膜トランジスタアレイ基板及びその製造方法
EP0288011A3 (de) *	1987-04-20	1991-02-20	Hitachi, Ltd.	Flüssigkristallanzeigeeinrichtung und Steuerungsverfahren dafür
JPH01291467A (ja) *	1988-05-19	1989-11-24	Toshiba Corp	薄膜トランジスタ
JP3351026B2 (ja) *	1993-06-04	2002-11-25	松下電器産業株式会社	電気湯沸かし器

1988
- 1988-08-10 JP JP20078288A patent/JPH0816756B2/ja not_active Expired - Lifetime
1989
- 1989-08-09 US US07/391,244 patent/US5054887A/en not_active Expired - Lifetime
- 1989-08-10 EP EP89308162A patent/EP0376437B1/de not_active Expired - Lifetime
- 1989-08-10 DE DE68920130T patent/DE68920130T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0376437B1 (de)	1994-12-21
JPH0248639A (ja)	1990-02-19
JPH0816756B2 (ja)	1996-02-21
US5054887A (en)	1991-10-08
EP0376437A2 (de)	1990-07-04
DE68920130T2 (de)	1995-06-22
EP0376437A3 (en)	1990-10-31

Publication	Publication Date	Title
DE68920130D1 (de)	1995-02-02	Flüssigkristallanzeige mit aktiver Matrix.
DE68920620D1 (de)	1995-03-02	Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix.
DE68920935D1 (de)	1995-03-16	Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix mit reduziertem Flimmern.
DE69015961D1 (de)	1995-02-23	Flüssigkristallanzeigeelement mit aktiver Matrix.
DE3888465D1 (de)	1994-04-21	Flüssigkristallsubstrat mit aktiver Matrix.
DE69108062D1 (de)	1995-04-20	Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix.
DE68923929D1 (de)	1995-09-28	Flüssigkristall-Anzeige.
DE69316399D1 (de)	1998-02-26	Flüssigkristallanzeige mit Aktivmatrixansteuerung
DE68926942D1 (de)	1996-09-19	Flüssigkristall-Projektionsanzeigevorrichtung mit einer aktiven Matrix
DE3685821D1 (de)	1992-07-30	Anzeigeanordnung mit fluessigkristall.
DE68915413D1 (de)	1994-06-23	Anzeigevorrichtung mit aktiver Matrix.
DE69427109D1 (de)	2001-05-23	Flüssigkristallanzeigegerät mit aktiver Matrix
DE68921591D1 (de)	1995-04-13	Flüssigkristall-Anzeigevorrichtung.
DE68915325D1 (de)	1994-06-23	Flüssigkristallanzeigevorrichtung.
DE68906608D1 (de)	1993-06-24	Fluessigkristall-anzeigevorrichtung.
DE68914860D1 (de)	1994-06-01	Flüssigkristall-Anzeigevorrichtung.
DE68924212D1 (de)	1995-10-19	Flüssigkristall-Anzeigevorrichtung.
DE69424990D1 (de)	2000-07-27	Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix
DE68915947D1 (de)	1994-07-14	Flüssigkristall-Anzeigevorrichtung.
DE69428354D1 (de)	2001-10-25	Flüssigkristall-anzeigevorrichtung mit aktiver matrix
DE69423675D1 (de)	2000-05-04	Flüssigkristallanzeigevorrichtung mit aktiver Matrix
DE68924247D1 (de)	1995-10-19	Anzeigevorrichtung mit aktiver Matrix.
DE68924823D1 (de)	1995-12-21	Flüssigkristall-Anzeigevorrichtung.
DE68924766D1 (de)	1995-12-14	Flüssigkristall-Anzeigevorrichtung.
DE69627393D1 (de)	2003-05-15	Flüssigkristallanzeige mit aktivmatrix

Legal Events

Date	Code	Title	Description
1996-01-25	8364	No opposition during term of opposition
1997-03-20	8328	Change in the person/name/address of the agent	Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN
2003-06-12	8339	Ceased/non-payment of the annual fee