DE68915413D1 - Anzeigevorrichtung mit aktiver Matrix. - Google Patents
Anzeigevorrichtung mit aktiver Matrix.Info
- Publication number
- DE68915413D1 DE68915413D1 DE68915413T DE68915413T DE68915413D1 DE 68915413 D1 DE68915413 D1 DE 68915413D1 DE 68915413 T DE68915413 T DE 68915413T DE 68915413 T DE68915413 T DE 68915413T DE 68915413 D1 DE68915413 D1 DE 68915413D1
- Authority
- DE
- Germany
- Prior art keywords
- display device
- active matrix
- matrix display
- active
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136268—Switch defects
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63321361A JPH02165125A (ja) | 1988-12-20 | 1988-12-20 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68915413D1 true DE68915413D1 (de) | 1994-06-23 |
DE68915413T2 DE68915413T2 (de) | 1994-11-17 |
Family
ID=18131714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68915413T Expired - Lifetime DE68915413T2 (de) | 1988-12-20 | 1989-12-11 | Anzeigevorrichtung mit aktiver Matrix. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5173792A (de) |
EP (1) | EP0375233B1 (de) |
JP (1) | JPH02165125A (de) |
DE (1) | DE68915413T2 (de) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69108062T2 (de) * | 1990-01-17 | 1995-07-20 | Toshiba Kawasaki Kk | Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix. |
JPH06100757B2 (ja) * | 1990-07-09 | 1994-12-12 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 液晶表示装置 |
JP2711015B2 (ja) * | 1990-07-25 | 1998-02-10 | 三菱電機株式会社 | マトリクス形表示装置 |
US5287206A (en) * | 1990-11-30 | 1994-02-15 | Sharp Kabushiki Kaisha | Active matrix display device |
JP2650780B2 (ja) * | 1990-11-30 | 1997-09-03 | シャープ株式会社 | アクティブマトリクス基板 |
JP2999271B2 (ja) * | 1990-12-10 | 2000-01-17 | 株式会社半導体エネルギー研究所 | 表示装置 |
US6713783B1 (en) * | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
JPH07119919B2 (ja) * | 1991-05-15 | 1995-12-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 液晶表示装置 |
US5414278A (en) * | 1991-07-04 | 1995-05-09 | Mitsushibi Denki Kabushiki Kaisha | Active matrix liquid crystal display device |
JPH05119344A (ja) * | 1991-10-25 | 1993-05-18 | Nec Corp | 液晶表示デバイス |
GB9219836D0 (en) * | 1992-09-18 | 1992-10-28 | Philips Electronics Uk Ltd | Electronic drive circuits for active matrix devices,and a method of self-tasting and programming such circuits |
KR100268007B1 (ko) * | 1992-12-22 | 2000-10-16 | 구본준 | 액정표시소자 제조방법 |
US5555001A (en) * | 1994-03-08 | 1996-09-10 | Prime View Hk Limited | Redundant scheme for LCD display with integrated data driving circuit |
JP3402400B2 (ja) | 1994-04-22 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
US6943764B1 (en) | 1994-04-22 | 2005-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit for an active matrix display device |
CN1146056C (zh) | 1994-06-02 | 2004-04-14 | 株式会社半导体能源研究所 | 有源矩阵显示器 |
JP3897826B2 (ja) * | 1994-08-19 | 2007-03-28 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
US5956008A (en) * | 1994-09-06 | 1999-09-21 | Semiconductor Energy Laboratory Co., | Driver circuit for active matrix display and method of operating same |
US5929464A (en) * | 1995-01-20 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix electro-optical device |
JP3418653B2 (ja) | 1995-09-28 | 2003-06-23 | シャープ株式会社 | アクティブマトリクス型液晶表示装置 |
JP3256110B2 (ja) * | 1995-09-28 | 2002-02-12 | シャープ株式会社 | 液晶表示装置 |
JP4059292B2 (ja) * | 1996-09-26 | 2008-03-12 | セイコーエプソン株式会社 | 表示装置 |
GB9705417D0 (en) * | 1997-03-15 | 1997-04-30 | Sharp Kk | Fault tolerant circuit arrangements |
KR100430773B1 (ko) * | 1998-07-14 | 2004-05-10 | 가부시끼가이샤 도시바 | 액티브 매트릭스형 액정표시장치 |
US6512504B1 (en) | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
JP4755748B2 (ja) * | 1999-09-24 | 2011-08-24 | 東芝モバイルディスプレイ株式会社 | 平面表示装置 |
TWI301915B (de) | 2000-03-17 | 2008-10-11 | Seiko Epson Corp | |
JP3645184B2 (ja) * | 2000-05-31 | 2005-05-11 | シャープ株式会社 | 液晶表示装置及びその欠陥修正方法 |
JP4925528B2 (ja) * | 2000-09-29 | 2012-04-25 | 三洋電機株式会社 | 表示装置 |
JP4632522B2 (ja) * | 2000-11-30 | 2011-02-16 | Nec液晶テクノロジー株式会社 | 反射型液晶表示装置の製造方法 |
TW466673B (en) * | 2000-12-11 | 2001-12-01 | Unipac Optoelectronics Corp | Cst on common structure |
JP3520417B2 (ja) | 2000-12-14 | 2004-04-19 | セイコーエプソン株式会社 | 電気光学パネルおよび電子機器 |
US7280090B2 (en) | 2000-12-22 | 2007-10-09 | Electronics For Imaging, Inc. | Methods and apparatus for repairing inoperative pixels in a display |
GB2372620A (en) * | 2001-02-27 | 2002-08-28 | Sharp Kk | Active Matrix Device |
GB0112561D0 (en) * | 2001-05-23 | 2001-07-18 | Koninl Philips Electronics Nv | Active plate |
KR100469342B1 (ko) * | 2001-07-11 | 2005-02-02 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 |
US7112517B2 (en) | 2001-09-10 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Laser treatment device, laser treatment method, and semiconductor device fabrication method |
JP2003091245A (ja) | 2001-09-18 | 2003-03-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
US6862052B2 (en) * | 2001-12-14 | 2005-03-01 | Samsung Electronics Co., Ltd. | Liquid crystal display, thin film transistor array panel for liquid crystal display and manufacturing method thereof |
US20040110326A1 (en) * | 2002-11-20 | 2004-06-10 | Charles Forbes | Active matrix thin film transistor array backplane |
TWI224234B (en) * | 2003-08-12 | 2004-11-21 | Quanta Display Inc | Pixel structure and fabricating method thereof |
KR20050041010A (ko) * | 2003-10-29 | 2005-05-04 | 삼성전자주식회사 | 박막 다이오드 표시판 및 그 제조 방법 |
TWI277935B (en) * | 2004-01-06 | 2007-04-01 | Hannstar Display Corp | Pixel structure and exposure method thereof |
JP4088619B2 (ja) * | 2004-01-28 | 2008-05-21 | シャープ株式会社 | アクティブマトリクス基板及び表示装置 |
JP4627081B2 (ja) * | 2004-01-28 | 2011-02-09 | シャープ株式会社 | アクティブマトリクス基板及び表示装置 |
JP2005252228A (ja) * | 2004-02-05 | 2005-09-15 | Sharp Corp | 表示装置及びその製造方法 |
TWI282969B (en) * | 2004-04-29 | 2007-06-21 | Au Optronics Corp | Thin film transistor array and fabricating method thereof |
US20050275352A1 (en) * | 2004-06-14 | 2005-12-15 | Au Optronics Corporation. | Redundant storage capacitor and method for repairing OLED pixels and driving circuits |
JP4829534B2 (ja) * | 2005-05-31 | 2011-12-07 | シャープ株式会社 | 薄膜トランジスタマトリクス基板及びその欠陥修復方法 |
JP4405557B2 (ja) * | 2005-09-22 | 2010-01-27 | シャープ株式会社 | アクティブマトリクス基板、表示装置、テレビジョン装置、アクティブマトリクス基板の製造方法、及び表示装置の製造方法 |
US8947297B2 (en) * | 2006-01-30 | 2015-02-03 | The Invention Science Fund I, Llc | Positional display elements |
KR101232157B1 (ko) * | 2006-06-09 | 2013-02-12 | 엘지디스플레이 주식회사 | Lcd 검사 장비 |
JP5004908B2 (ja) * | 2008-09-05 | 2012-08-22 | パナソニック液晶ディスプレイ株式会社 | 液晶表示装置 |
WO2010052954A1 (ja) * | 2008-11-05 | 2010-05-14 | シャープ株式会社 | アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶パネル、液晶パネルの製造方法、液晶表示装置、液晶表示ユニット、テレビジョン受像機 |
US8659712B2 (en) | 2008-12-10 | 2014-02-25 | Sharp Kabushiki Kaisha | Active matrix substrate, method for manufacturing active matrix substrate, liquid crystal panel, method for manufacturing liquid crystal panel, liquid crystal display device, liquid crystal display unit, and television receiver |
EP2256544A1 (de) * | 2009-05-27 | 2010-12-01 | Polymer Vision Limited | Verfahren zur Herstellung einer Anzeigetafel und Anzeigetafel mit reparierfähigen Elementen |
TWI409894B (zh) * | 2010-07-09 | 2013-09-21 | Chunghwa Picture Tubes Ltd | 薄膜電晶體之對位檢測方法 |
CN103018987B (zh) * | 2012-12-06 | 2015-05-13 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
KR20140120167A (ko) * | 2013-04-02 | 2014-10-13 | 삼성디스플레이 주식회사 | 수리된 화소를 갖는 유기전계발광 표시장치 및 그의 화소 수리방법 |
WO2014208013A1 (ja) * | 2013-06-27 | 2014-12-31 | 凸版印刷株式会社 | 薄膜トランジスタアレイ、その製造方法、画像表示装置及び表示方法 |
JP6451054B2 (ja) * | 2014-01-23 | 2019-01-16 | 凸版印刷株式会社 | 薄膜トランジスタアレイ、その製造方法及び画像表示装置 |
KR102296945B1 (ko) * | 2014-07-04 | 2021-09-01 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN109270756B (zh) * | 2018-09-30 | 2020-12-25 | 惠科股份有限公司 | 一种显示面板和显示装置 |
JP7193404B2 (ja) * | 2019-03-29 | 2022-12-20 | 株式会社ジャパンディスプレイ | 表示装置 |
CN114446187B (zh) * | 2020-11-03 | 2023-06-27 | 成都辰显光电有限公司 | 驱动背板、显示面板及其制备方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3532813A (en) * | 1967-09-25 | 1970-10-06 | Rca Corp | Display circuit including charging circuit and fast reset circuit |
JPS55120175A (en) * | 1979-03-12 | 1980-09-16 | Clarion Co Ltd | Variable capacitance diode with plural super-capacitance variable electrode structures |
US4431271A (en) * | 1979-09-06 | 1984-02-14 | Canon Kabushiki Kaisha | Display device with a thin film transistor and storage condenser |
JPS59119390A (ja) * | 1982-12-25 | 1984-07-10 | 株式会社東芝 | 薄膜トランジスタ回路 |
US4748445A (en) * | 1983-07-13 | 1988-05-31 | Citizen Watch Co., Ltd. | Matrix display panel having a diode ring structure as a resistive element |
US4639087A (en) * | 1984-08-08 | 1987-01-27 | Energy Conversion Devices, Inc. | Displays having pixels with two portions and capacitors |
US4728172A (en) * | 1984-08-08 | 1988-03-01 | Energy Conversion Devices, Inc. | Subassemblies for displays having pixels with two portions and capacitors |
GB8508656D0 (en) * | 1985-04-03 | 1985-05-09 | Gen Electric Co Plc | Liquid crystal displays |
US4728175A (en) * | 1986-10-09 | 1988-03-01 | Ovonic Imaging Systems, Inc. | Liquid crystal display having pixels with auxiliary capacitance |
US4820222A (en) * | 1986-12-31 | 1989-04-11 | Alphasil, Inc. | Method of manufacturing flat panel backplanes including improved testing and yields thereof and displays made thereby |
US4762398A (en) * | 1987-01-26 | 1988-08-09 | Hosiden Electronics Co., Ltd. | Pixel transistor free of parasitic capacitance fluctuations from misalignment |
DE3851557T2 (de) * | 1987-03-18 | 1995-01-26 | Matsushita Electric Ind Co Ltd | Videoprojektor. |
GB2206721A (en) * | 1987-07-03 | 1989-01-11 | Philips Electronic Associated | Active matrix display device |
JPS6437585A (en) * | 1987-08-04 | 1989-02-08 | Nippon Telegraph & Telephone | Active matrix type display device |
JPS6473324A (en) * | 1987-09-14 | 1989-03-17 | Matsushita Electric Ind Co Ltd | Display device and its driving method |
JPH0251129A (ja) * | 1988-08-12 | 1990-02-21 | Sanyo Electric Co Ltd | アクテイブマトリクス液晶表示パネル |
KR940005124B1 (ko) * | 1989-10-04 | 1994-06-11 | 호시덴 가부시기가이샤 | 액정표시소자 |
-
1988
- 1988-12-20 JP JP63321361A patent/JPH02165125A/ja active Pending
-
1989
- 1989-12-11 DE DE68915413T patent/DE68915413T2/de not_active Expired - Lifetime
- 1989-12-11 EP EP89312881A patent/EP0375233B1/de not_active Expired - Lifetime
- 1989-12-19 US US07/454,396 patent/US5173792A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH02165125A (ja) | 1990-06-26 |
DE68915413T2 (de) | 1994-11-17 |
US5173792A (en) | 1992-12-22 |
EP0375233A2 (de) | 1990-06-27 |
EP0375233A3 (de) | 1991-01-16 |
EP0375233B1 (de) | 1994-05-18 |
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