DE68921591D1 - Flüssigkristall-Anzeigevorrichtung. - Google Patents
Flüssigkristall-Anzeigevorrichtung.Info
- Publication number
- DE68921591D1 DE68921591D1 DE68921591T DE68921591T DE68921591D1 DE 68921591 D1 DE68921591 D1 DE 68921591D1 DE 68921591 T DE68921591 T DE 68921591T DE 68921591 T DE68921591 T DE 68921591T DE 68921591 D1 DE68921591 D1 DE 68921591D1
- Authority
- DE
- Germany
- Prior art keywords
- liquid crystal
- display device
- crystal display
- liquid
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33134288A JP2794583B2 (ja) | 1988-12-28 | 1988-12-28 | 液晶表示装置 |
JP33134488A JP2754639B2 (ja) | 1988-12-28 | 1988-12-28 | 液晶表示装置 |
JP63331341A JPH02176724A (ja) | 1988-12-28 | 1988-12-28 | 液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68921591D1 true DE68921591D1 (de) | 1995-04-13 |
DE68921591T2 DE68921591T2 (de) | 1995-11-09 |
Family
ID=27340480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68921591T Expired - Fee Related DE68921591T2 (de) | 1988-12-28 | 1989-12-28 | Flüssigkristall-Anzeigevorrichtung. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5159476A (de) |
EP (1) | EP0376329B1 (de) |
DE (1) | DE68921591T2 (de) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2714993B2 (ja) * | 1989-12-15 | 1998-02-16 | セイコーエプソン株式会社 | 液晶表示装置 |
FR2669759A1 (fr) * | 1990-11-23 | 1992-05-29 | Thomson Lcd | Ecran plat a matrice active. |
EP0499979A3 (en) | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
JP2873632B2 (ja) | 1991-03-15 | 1999-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
JP2794499B2 (ja) * | 1991-03-26 | 1998-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6778231B1 (en) | 1991-06-14 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device |
US6975296B1 (en) | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US5414442A (en) * | 1991-06-14 | 1995-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US5457553A (en) * | 1991-12-25 | 1995-10-10 | Casio Computer Co., Ltd. | Thin-film transistor panel with reduced number of capacitor lines |
TW226044B (de) * | 1992-04-15 | 1994-07-01 | Toshiba Co Ltd | |
JP2814161B2 (ja) * | 1992-04-28 | 1998-10-22 | 株式会社半導体エネルギー研究所 | アクティブマトリクス表示装置およびその駆動方法 |
US6693681B1 (en) | 1992-04-28 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
EP0592063A3 (en) * | 1992-09-14 | 1994-07-13 | Toshiba Kk | Active matrix liquid crystal display device |
US5461501A (en) | 1992-10-08 | 1995-10-24 | Hitachi, Ltd. | Liquid crystal substrate having 3 metal layers with slits offset to block light from reaching the substrate |
US6686976B2 (en) | 1992-10-08 | 2004-02-03 | Hitachi, Ltd. | Liquid crystal light valve and projection type display using same |
US5708483A (en) * | 1993-07-13 | 1998-01-13 | Kabushiki Kaisha Toshiba | Active matrix type display device |
US5491347A (en) * | 1994-04-28 | 1996-02-13 | Xerox Corporation | Thin-film structure with dense array of binary control units for presenting images |
US5546204A (en) * | 1994-05-26 | 1996-08-13 | Honeywell Inc. | TFT matrix liquid crystal device having data source lines and drain means of etched and doped single crystal silicon |
US5650636A (en) * | 1994-06-02 | 1997-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display and electrooptical device |
US5774099A (en) * | 1995-04-25 | 1998-06-30 | Hitachi, Ltd. | Liquid crystal device with wide viewing angle characteristics |
KR0169386B1 (ko) * | 1995-05-31 | 1999-03-20 | 김광호 | 액정 표시 장치 및 이에 사용되는 박막 트랜지스터 기판 |
JP3792749B2 (ja) * | 1995-06-02 | 2006-07-05 | 株式会社東芝 | 液晶表示装置 |
KR0149297B1 (ko) * | 1995-07-12 | 1998-12-15 | 김광호 | 액정 표시 장치 및 그 구동 방법 |
KR0171984B1 (ko) * | 1995-12-11 | 1999-03-30 | 김주용 | 박막 트랜지스터의 자기 정렬 노광 방법 |
JP3228401B2 (ja) * | 1996-02-26 | 2001-11-12 | シャープ株式会社 | 液晶表示装置およびその駆動方法 |
KR100419087B1 (ko) * | 1996-05-22 | 2004-05-24 | 삼성전자주식회사 | 액정표시장치 |
KR100209281B1 (ko) * | 1996-10-16 | 1999-07-15 | 김영환 | 액정 표시 소자 및 그 제조방법 |
KR100247493B1 (ko) * | 1996-10-18 | 2000-03-15 | 구본준, 론 위라하디락사 | 액티브매트릭스기판의 구조 |
KR100230595B1 (ko) * | 1996-12-28 | 1999-11-15 | 김영환 | 액정 표시 장치 및 그 제조방법 |
KR100228431B1 (ko) * | 1996-12-30 | 1999-11-01 | 김영환 | 액정 표시 소자 및 그 제조방법 |
JPH10221704A (ja) * | 1997-02-07 | 1998-08-21 | Sharp Corp | 反射型液晶表示装置およびその製造方法 |
US6124912A (en) * | 1997-06-09 | 2000-09-26 | National Semiconductor Corporation | Reflectance enhancing thin film stack in which pairs of dielectric layers are on a reflector and liquid crystal is on the dielectric layers |
KR100277182B1 (ko) * | 1998-04-22 | 2001-01-15 | 김영환 | 액정표시소자 |
US6452652B1 (en) | 1998-06-12 | 2002-09-17 | National Semiconductor Corporation | Light absorbing thin film stack in a light valve structure |
US6300241B1 (en) | 1998-08-19 | 2001-10-09 | National Semiconductor Corporation | Silicon interconnect passivation and metallization process optimized to maximize reflectance |
JP3401589B2 (ja) * | 1998-10-21 | 2003-04-28 | 株式会社アドバンスト・ディスプレイ | Tftアレイ基板および液晶表示装置 |
JP2000227770A (ja) | 1998-12-01 | 2000-08-15 | Sanyo Electric Co Ltd | カラーel表示装置 |
JP2000227771A (ja) * | 1998-12-01 | 2000-08-15 | Sanyo Electric Co Ltd | カラーel表示装置 |
US5982472A (en) * | 1998-12-14 | 1999-11-09 | National Semiconductor Corporation | Self-aligned pixel with support pillars for a liquid crystal light valve |
KR20000041955A (ko) * | 1998-12-24 | 2000-07-15 | 김영환 | 박막 트랜지스터 액정표시소자 |
EP2284605A3 (de) | 1999-02-23 | 2017-10-18 | Semiconductor Energy Laboratory Co, Ltd. | Halbleiterbauelement und Verfahren zu dessen Herstellung |
KR100375349B1 (ko) * | 2000-08-04 | 2003-03-08 | 삼성에스디아이 주식회사 | 다중 데이타 전극을 갖는 메트릭스형 평판 표시 패널 및그 구동 방법 |
JP3884625B2 (ja) * | 2001-03-14 | 2007-02-21 | シャープ株式会社 | 液晶表示装置及びその欠陥修復方法 |
KR100770543B1 (ko) * | 2001-03-20 | 2007-10-25 | 엘지.필립스 엘시디 주식회사 | 액정표시장치와 그 구동방법 |
US20020167479A1 (en) * | 2001-05-10 | 2002-11-14 | Koninklijke Philips Electronics N.V. | High performance reflective liquid crystal light valve using a multi-row addressing scheme |
DE10134900B4 (de) * | 2001-07-18 | 2007-03-15 | Infineon Technologies Ag | Haltevorrichtung mit Diffusionssperrschicht für Halbleitereinrichtungen |
JP4798907B2 (ja) | 2001-09-26 | 2011-10-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI280532B (en) | 2002-01-18 | 2007-05-01 | Semiconductor Energy Lab | Light-emitting device |
KR100890022B1 (ko) * | 2002-07-19 | 2009-03-25 | 삼성전자주식회사 | 액정 표시 장치 및 그 구동 방법 |
JP4000515B2 (ja) * | 2002-10-07 | 2007-10-31 | セイコーエプソン株式会社 | 電気光学装置、マトリクス基板、及び電子機器 |
KR101012944B1 (ko) * | 2002-12-21 | 2011-02-08 | 엘지디스플레이 주식회사 | 강유전성 액정의 전계배향방법과 이를 이용한 액정표시장치 |
KR100647774B1 (ko) * | 2004-11-04 | 2006-11-23 | 엘지.필립스 엘시디 주식회사 | 폴리 실리콘형 박막 트랜지스터 기판 및 제조 방법 |
CN100489633C (zh) * | 2005-01-25 | 2009-05-20 | 友达光电股份有限公司 | 薄膜晶体管阵列基板 |
KR101237011B1 (ko) * | 2005-08-02 | 2013-02-26 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR20070031620A (ko) * | 2005-09-15 | 2007-03-20 | 삼성전자주식회사 | 액정 표시 장치 |
CN101796455B (zh) * | 2007-09-27 | 2012-05-02 | 夏普株式会社 | 显示装置 |
JP2009092912A (ja) | 2007-10-09 | 2009-04-30 | Hitachi Displays Ltd | 液晶表示装置 |
US8610653B2 (en) * | 2007-10-11 | 2013-12-17 | Sharp Kabushiki Kaisha | Liquid crystal display panel and liquid crystal display device |
CN101726892B (zh) * | 2008-10-24 | 2012-07-18 | 群康科技(深圳)有限公司 | 液晶显示面板 |
KR20100053949A (ko) * | 2008-11-13 | 2010-05-24 | 삼성전자주식회사 | 액정 표시 장치 |
US8704232B2 (en) | 2012-06-12 | 2014-04-22 | Apple Inc. | Thin film transistor with increased doping regions |
US20130335658A1 (en) * | 2012-06-15 | 2013-12-19 | Apple Inc. | Pixel Architecture for Electronic Displays |
US9065077B2 (en) | 2012-06-15 | 2015-06-23 | Apple, Inc. | Back channel etch metal-oxide thin film transistor and process |
US8987027B2 (en) | 2012-08-31 | 2015-03-24 | Apple Inc. | Two doping regions in lightly doped drain for thin film transistors and associated doping processes |
US9685557B2 (en) | 2012-08-31 | 2017-06-20 | Apple Inc. | Different lightly doped drain length control for self-align light drain doping process |
US8748320B2 (en) | 2012-09-27 | 2014-06-10 | Apple Inc. | Connection to first metal layer in thin film transistor process |
US8999771B2 (en) | 2012-09-28 | 2015-04-07 | Apple Inc. | Protection layer for halftone process of third metal |
US9201276B2 (en) | 2012-10-17 | 2015-12-01 | Apple Inc. | Process architecture for color filter array in active matrix liquid crystal display |
US9001297B2 (en) | 2013-01-29 | 2015-04-07 | Apple Inc. | Third metal layer for thin film transistor with reduced defects in liquid crystal display |
US9088003B2 (en) | 2013-03-06 | 2015-07-21 | Apple Inc. | Reducing sheet resistance for common electrode in top emission organic light emitting diode display |
JP7245788B2 (ja) | 2018-02-01 | 2023-03-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3113041A1 (de) * | 1980-04-01 | 1982-01-28 | Canon K.K., Tokyo | Verfahren und vorrichtung zur anzeige von informationen |
GB2081018B (en) * | 1980-07-31 | 1985-06-26 | Suwa Seikosha Kk | Active matrix assembly for display device |
FR2533072B1 (fr) * | 1982-09-14 | 1986-07-18 | Coissard Pierre | Procede de fabrication de circuits electroniques a base de transistors en couches minces et de condensateurs |
JPS59116685A (ja) * | 1982-12-23 | 1984-07-05 | セイコーインスツルメンツ株式会社 | 画像表示装置 |
FR2571526B1 (fr) * | 1984-08-22 | 1991-02-08 | Canon Kk | Panneau d'affichage et son procede de commande |
EP0275140B1 (de) * | 1987-01-09 | 1995-07-19 | Hitachi, Ltd. | Verfahren und Schaltung zum Abtasten von kapazitiven Belastungen |
JPS63175832A (ja) * | 1987-01-16 | 1988-07-20 | Hosiden Electronics Co Ltd | アクテイブマトリクス液晶表示装置 |
US4762398A (en) * | 1987-01-26 | 1988-08-09 | Hosiden Electronics Co., Ltd. | Pixel transistor free of parasitic capacitance fluctuations from misalignment |
EP0283290B1 (de) * | 1987-03-18 | 1994-09-21 | Matsushita Electric Industrial Co., Ltd. | Videoprojektor |
DE3884442T2 (de) * | 1987-04-15 | 1994-02-17 | Sharp Kk | Flüssigkristallanzeigegerät. |
JPS6437585A (en) * | 1987-08-04 | 1989-02-08 | Nippon Telegraph & Telephone | Active matrix type display device |
US4839707A (en) * | 1987-08-27 | 1989-06-13 | Hughes Aircraft Company | LCMOS displays fabricated with implant treated silicon wafers |
JPS6473324A (en) * | 1987-09-14 | 1989-03-17 | Matsushita Electric Ind Co Ltd | Display device and its driving method |
US4922240A (en) * | 1987-12-29 | 1990-05-01 | North American Philips Corp. | Thin film active matrix and addressing circuitry therefor |
US4968119A (en) * | 1989-01-10 | 1990-11-06 | David Sarnoff Research Center, Inc. | High-density liquid-crystal active dot-matrix display structure |
-
1989
- 1989-12-28 US US07/458,397 patent/US5159476A/en not_active Expired - Lifetime
- 1989-12-28 DE DE68921591T patent/DE68921591T2/de not_active Expired - Fee Related
- 1989-12-28 EP EP89124104A patent/EP0376329B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0376329A3 (de) | 1991-06-19 |
EP0376329B1 (de) | 1995-03-08 |
DE68921591T2 (de) | 1995-11-09 |
US5159476A (en) | 1992-10-27 |
EP0376329A2 (de) | 1990-07-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |