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DE3582415D1 - Halbleiterspeicher mit in bloecken unterteilten bitleitungen. - Google Patents

Halbleiterspeicher mit in bloecken unterteilten bitleitungen.

Info

Publication number
DE3582415D1
DE3582415D1 DE8585402247T DE3582415T DE3582415D1 DE 3582415 D1 DE3582415 D1 DE 3582415D1 DE 8585402247 T DE8585402247 T DE 8585402247T DE 3582415 T DE3582415 T DE 3582415T DE 3582415 D1 DE3582415 D1 DE 3582415D1
Authority
DE
Germany
Prior art keywords
blocks
semiconductor memory
bit lines
lines divided
divided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585402247T
Other languages
English (en)
Inventor
Keizo Aoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP24580384A external-priority patent/JPH0652635B2/ja
Priority claimed from JP59245801A external-priority patent/JPS61123093A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3582415D1 publication Critical patent/DE3582415D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE8585402247T 1984-11-20 1985-11-20 Halbleiterspeicher mit in bloecken unterteilten bitleitungen. Expired - Lifetime DE3582415D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24580384A JPH0652635B2 (ja) 1984-11-20 1984-11-20 半導体記憶装置
JP59245801A JPS61123093A (ja) 1984-11-20 1984-11-20 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3582415D1 true DE3582415D1 (de) 1991-05-08

Family

ID=26537410

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585402247T Expired - Lifetime DE3582415D1 (de) 1984-11-20 1985-11-20 Halbleiterspeicher mit in bloecken unterteilten bitleitungen.

Country Status (4)

Country Link
US (1) US4730280A (de)
EP (1) EP0185572B1 (de)
KR (1) KR900005667B1 (de)
DE (1) DE3582415D1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731747A (en) * 1986-04-14 1988-03-15 American Telephone And Telegraph Company, At&T Bell Laboratories Highly parallel computation network with normalized speed of response
US5132930A (en) * 1986-07-31 1992-07-21 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic memory device having multiple flip-flop circuits selectively coupled to form sense amplifiers specific to neighboring data bit lines
EP0523756A3 (en) * 1986-08-15 1993-06-09 Nec Corporation Static random access memory having bi-cmos construction
JPH07118193B2 (ja) * 1986-09-18 1995-12-18 富士通株式会社 半導体記憶装置
EP0271718B1 (de) * 1986-11-18 1992-03-04 Siemens Aktiengesellschaft Digitalverstärkeranordnung in integrierten Schaltungen
KR890002812B1 (ko) * 1986-11-28 1989-07-31 삼성전자 주식회사 씨모오스 디램에서 레이아웃이 최적화된 감지증폭기
JPS63149900A (ja) * 1986-12-15 1988-06-22 Toshiba Corp 半導体メモリ
JPH0799627B2 (ja) * 1987-01-23 1995-10-25 松下電器産業株式会社 半導体メモリの書き込み読み出し回路
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
US4980863A (en) * 1987-03-31 1990-12-25 Kabushiki Kaisha Toshiba Semiconductor memory device having switching circuit for coupling together two pairs of bit lines
US4807195A (en) * 1987-05-18 1989-02-21 International Business Machines Corporation Apparatus and method for providing a dual sense amplifier with divided bit line isolation
JP2828630B2 (ja) * 1987-08-06 1998-11-25 三菱電機株式会社 半導体装置
JPH07105137B2 (ja) * 1987-11-17 1995-11-13 日本電気株式会社 半導体メモリ
KR890010917A (ko) * 1987-12-28 1989-08-11 다니이 아끼오 낮은 첨두전류로 작동하는 반도체 메모리
JPH0235765A (ja) * 1988-07-26 1990-02-06 Nec Corp 半導体集積回路装置
DE3937068C2 (de) * 1988-11-07 1994-10-06 Toshiba Kawasaki Kk Dynamische Halbleiterspeicheranordnung
JPH07105140B2 (ja) * 1988-12-16 1995-11-13 日本電気株式会社 半導体メモリ
US5293563A (en) * 1988-12-29 1994-03-08 Sharp Kabushiki Kaisha Multi-level memory cell with increased read-out margin
JPH03176891A (ja) * 1989-12-04 1991-07-31 Nec Corp 半導体記憶装置
US4972374A (en) * 1989-12-27 1990-11-20 Motorola, Inc. Output amplifying stage with power saving feature
US5226014A (en) * 1990-12-24 1993-07-06 Ncr Corporation Low power pseudo-static ROM
JP3533227B2 (ja) * 1992-09-10 2004-05-31 株式会社日立製作所 半導体記憶装置
US5515315A (en) * 1993-12-24 1996-05-07 Sony Corporation Dynamic random access memory
US5666320A (en) * 1995-12-20 1997-09-09 International Business Machines Corporation Storage system
US6552932B1 (en) * 2001-09-21 2003-04-22 Sandisk Corporation Segmented metal bitlines
KR100564607B1 (ko) * 2004-01-29 2006-03-28 삼성전자주식회사 태퍼드 ｌｉｏ 센스 앰프를 사용하는 반도체 메모리 장치
TWI493568B (zh) * 2013-08-19 2015-07-21 Ind Tech Res Inst 記憶體裝置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2647394C2 (de) * 1976-10-20 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen MOS-Halbleiterspeicherbaustein
US4286178A (en) * 1978-06-12 1981-08-25 Texas Instruments Incorporated Sense amplifier with dual parallel driver transistors in MOS random access memory
JPS573290A (en) * 1980-01-31 1982-01-08 Nec Corp Semiconductor storing circuit
US4287576A (en) * 1980-03-26 1981-09-01 International Business Machines Corporation Sense amplifying system for memories with small cells
JPS57198592A (en) * 1981-05-29 1982-12-06 Hitachi Ltd Semiconductor memory device
EP0101884A3 (de) * 1982-07-21 1987-09-02 Hitachi, Ltd. Monolithischer Halbleiterspeicher
JPH0670878B2 (ja) * 1982-11-30 1994-09-07 富士通株式会社 半導体記憶装置
US4542483A (en) * 1983-12-02 1985-09-17 At&T Bell Laboratories Dual stage sense amplifier for dynamic random access memory

Also Published As

Publication number Publication date
EP0185572B1 (de) 1991-04-03
EP0185572A3 (en) 1988-04-20
KR860004409A (ko) 1986-06-20
US4730280A (en) 1988-03-08
KR900005667B1 (ko) 1990-08-03
EP0185572A2 (de) 1986-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee