DE3275609D1 - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number: DE3275609D1
Authority: DE; Germany
Prior art keywords: memory device; semiconductor memory; semiconductor; memory
Prior art date: 1981-08-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

DE8282304429T

Other languages

English (en)

Inventor

Keizo Aoyama

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-08-24

Filing date

1982-08-23

Publication date

1987-04-09

1982-08-23 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1987-04-09 Application granted granted Critical

1987-04-09 Publication of DE3275609D1 publication Critical patent/DE3275609D1/de

Status Expired legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Static Random-Access Memory (AREA)
Dram (AREA)

DE8282304429T 1981-08-24 1982-08-23 Semiconductor memory device Expired DE3275609D1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP56132406A JPS5835783A (ja)	1981-08-24	1981-08-24	半導体メモリ

Publications (1)

Publication Number	Publication Date
DE3275609D1 true DE3275609D1 (en)	1987-04-09

Family

ID=15080642

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8282304429T Expired DE3275609D1 (en)	1981-08-24	1982-08-23	Semiconductor memory device

Country Status (5)

Country	Link
US (1)	US4480321A (de)
EP (1)	EP0074206B1 (de)
JP (1)	JPS5835783A (de)
DE (1)	DE3275609D1 (de)
IE (1)	IE53776B1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58125291A (ja) *	1982-01-20	1983-07-26	Hitachi Ltd	Ｍｏｓスタテイツク型ｒａｍ
JPS5952492A (ja) *	1982-09-17	1984-03-27	Fujitsu Ltd	スタテイツク型半導体記憶装置
JPH0762958B2 (ja) *	1983-06-03	1995-07-05	株式会社日立製作所	Ｍｏｓ記憶装置
JPS60117491A (ja) *	1983-11-29	1985-06-24	Nec Ic Microcomput Syst Ltd	メモリ書き込み回路
JPS60253091A (ja) *	1984-05-30	1985-12-13	Fujitsu Ltd	半導体記憶装置
JPS6166295A (ja) *	1984-09-10	1986-04-05	Nec Corp	半導体メモリ
JPS61110396A (ja) *	1984-11-05	1986-05-28	Fujitsu Ltd	半導体記憶装置
KR940011426B1 (ko) *	1985-07-26	1994-12-15	가부시기가이샤 히다찌세이사꾸쇼	반도체 기억 장치
US4947374A (en) *	1987-05-12	1990-08-07	Mitsubishi Denki Kabushiki Kaisha	Semiconductor memeory device in which writing is inhibited in address skew period and controlling method thereof
JP2507529B2 (ja) *	1988-03-31	1996-06-12	株式会社東芝	不揮発性半導体記憶装置
JPH0748307B2 (ja) *	1989-06-08	1995-05-24	株式会社東芝	半導体メモリ装置
JPH0399874U (de) *	1990-01-31	1991-10-18
JPH05234380A (ja) *	1992-02-21	1993-09-10	Sharp Corp	半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5345939A (en) *	1976-10-07	1978-04-25	Sharp Corp	Ram circuit
US4202045A (en) *	1979-03-05	1980-05-06	Motorola, Inc.	Write circuit for a read/write memory
JPS5668990A (en) *	1979-11-08	1981-06-09	Nec Corp	Memory circuit
JPS5856198B2 (ja) *	1980-09-25	1983-12-13	株式会社東芝	半導体記憶装置

1981
- 1981-08-24 JP JP56132406A patent/JPS5835783A/ja active Granted
1982
- 1982-08-23 DE DE8282304429T patent/DE3275609D1/de not_active Expired
- 1982-08-23 EP EP82304429A patent/EP0074206B1/de not_active Expired
- 1982-08-24 IE IE2041/82A patent/IE53776B1/en not_active IP Right Cessation
- 1982-08-24 US US06/411,008 patent/US4480321A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0074206A3 (en)	1985-01-09
IE822041L (en)	1983-02-24
JPS5835783A (ja)	1983-03-02
EP0074206B1 (de)	1987-03-04
US4480321A (en)	1984-10-30
JPS6249676B2 (de)	1987-10-20
IE53776B1 (en)	1989-02-15
EP0074206A2 (de)	1983-03-16

Publication	Publication Date	Title
DE3277659D1 (en)	1987-12-17	Semiconductor memory device
DE3171836D1 (en)	1985-09-19	Semiconductor memory device
GB2114811B (en)	1985-02-13	Semiconductor memory
GB8309216D0 (en)	1983-05-11	Semiconductor memory
DE3271769D1 (en)	1986-07-24	Semiconductor memory device
GB2097157B (en)	1985-02-20	Semiconductor memory device
DE3174417D1 (en)	1986-05-22	Semiconductor memory device
DE3168790D1 (en)	1985-03-21	Semiconductor memory device
GB2107114B (en)	1986-02-12	Semiconductor memory device
DE3272052D1 (en)	1986-08-21	Semiconductor memory device
IE822897L (en)	1983-06-07	Semiconductor memory device
DE3278055D1 (en)	1988-03-03	Semiconductor memory devices
DE3175431D1 (en)	1986-11-06	Semiconductor memory device
DE3275609D1 (en)	1987-04-09	Semiconductor memory device
DE3267623D1 (en)	1986-01-02	Semiconductor memory device
DE3173413D1 (en)	1986-02-20	Semiconductor memory device
DE3172401D1 (en)	1985-10-31	Semiconductor memory device
DE3175419D1 (en)	1986-11-06	Semiconductor memory
DE3170914D1 (en)	1985-07-18	Semiconductor memory device
DE3175320D1 (en)	1986-10-23	Semiconductor memory device
DE3278867D1 (en)	1988-09-08	Semiconductor memory device
DE3278894D1 (en)	1988-09-15	Semiconductor memory device
DE3278865D1 (en)	1988-09-08	Semiconductor memory devices
DE3171881D1 (en)	1985-09-26	Semiconductor memory device
GB2107541B (en)	1985-02-20	Semiconductor integrated memory device

Legal Events

Date	Code	Title	Description
1988-03-31	8364	No opposition during term of opposition