CN1242858A - 显示装置 - Google Patents
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- CN1242858A CN1242858A CN98801586A CN98801586A CN1242858A CN 1242858 A CN1242858 A CN 1242858A CN 98801586 A CN98801586 A CN 98801586A CN 98801586 A CN98801586 A CN 98801586A CN 1242858 A CN1242858 A CN 1242858A
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
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Abstract
本发明的显示装置在各象素中形成发光强度各不相同的多个发光元件,通过控制各发光元件的发光或不发光来显示灰度等级。将数字信号传递到各象素中,由串联连接到各发光元件上的薄膜晶体管来控制。各发光元件的发光强度是公比为2的等比数列。使薄膜晶体管的导通电阻比发光元件的导通电阻小,使薄膜晶体管的关断电阻比发光元件的关断电阻大。由此,可降低因晶体管的电导的不均匀性引起的发光元件的发光强度的不均匀性,实现了图象质量的提高。
Description
技术领域
本发明涉及显示元件,特别是涉及具备薄膜晶体管和因电流而发光的元件的显示装置(以下,记为电流发光显示装置)。
背景技术
作为实现大型、高精细、广视角、低功耗的在将来非常有希望的电流发光显示装置,可举出薄膜晶体管有机场致发光装置(以下,记为TFT-OELD)。
以下说明典型的现有的TFT-OELD的驱动方法。
在图5中示出现有的TFT-OELD的等效电路。在此,只图示了1个象素,但实际上存在多行、多列的多个象素。
从移位寄存器101输出脉冲,模拟信号供给线1022的模拟信号通过传送开关1032传递到源线1042上。相对于此时被选择的栅线109,模拟信号通过开关晶体管1052传递到保持电容1062上。由模拟信号来控制电流晶体管1072的电导,有机EL元件1082以对应于模拟信号的强度发光。
图6中示出现有的TFT-OELD的驱动方法。
利用第0列的移位寄存器的脉冲SRO将模拟信号A传递到第0列的源线的电位S0上。此外,利用第1列的移位寄存器的脉冲SR1将模拟信号A传递到第1列的源线的电位S1上。首先,在施加第0行的栅线的脉冲G0时,将第0列的源线的电位S0传递到第0行、第0列的的保持电容的电位C00上,将第1列的源线的电位S1传递到第0行、第1列的的保持电容的电位C01上。其次,在施加第1行的栅线的脉冲G1时,将第0列的源线的电位S0传递到第1行、第0列的的保持电容的电位C10上,将第1列的源线的电位S1传递到第1行、第1列的的保持电容的电位C11上。按照各保持电容1062(图5)的电位、即对应的模拟信号A,各有机EL元件1082(图5)以预定的强度发光。
此外,作为液晶显示装置的驱动方法的一种方式,已知有面积灰度等级方式。一般来说,在液晶显示装置中存在下述的问题。即,存在下述问题:由于在偏离显示面的法线方向的视角方向上透射率的变化及灰度等级反转变得显著,故视角变窄。上述面积灰度等级方式以解决该问题为目的,利用全部透过、全部不透过的面积比率来显示灰度等级。由此,实现了液晶显示装置的广视角化。
在上述的现有的TFT-OELD的驱动方法中,为了控制有机EL元件1082的发光强度,使用模拟信号来控制电流晶体管1072的电导。即,为了得到中间色调,必须使电流晶体管1072的电导与有机EL元件1082的电导相等,利用电流晶体管1072与有机EL元件1082的电压分割,来控制施加到有机EL元件1082上的电压。但是,此时存在下述问题:在屏内或屏间在电流晶体管1072的电导中产生不均匀性的情况下,该不均匀性作为有机EL元件1082的发光强度的不均匀性原封不动地被观察到。
因此,本发明的目的在于在电流发光显示装置、特别是TFT-OELD中降低因晶体管的电导的不均匀性引起的发光元件(特别是有机EL元件)的发光强度的不均匀性,实现图象质量的提高。
发明的公开
本发明的显示装置具有以下的结构。
本发明的显示装置具有多条扫描线、多条信号线以及由上述扫描线和上述信号线形成为矩阵状的象素,在上述象素中形成了多个薄膜晶体管和多个发光元件,该显示装置的特征在于:分别串联地连接上述薄膜晶体管和上述发光元件,上述发光元件的发光强度各不相同。
按照本结构,可实现将发光强度各不相同的多个发光元件的每一个控制成完全导通状态或完全关断状态的某一种的灰度等级方式。由此,可降低因薄膜晶体管的电导的不均匀性引起的发光元件的发光强度的不均匀性。
在本发明中,发光元件的发光、不发光最好由数字信号来控制。由此,可在每个象素中将发光强度各不相同的多个发光元件的每一个控制成完全导通状态或完全关断状态的某一种。
在本发明中,发光元件的发光强度最好是公比为2的等比数列。由此,就在每个象素中具备DA变换器,可得到对应于数字信号的发光强度特性。
在本发明中,薄膜晶体管的导通电阻最好比发光元件的导通电阻小,薄膜晶体管的关断电阻最好比发光元件的关断电阻大。由此,通过切换薄膜晶体管的导通状态和关断状态,可切换发光元件的导通状态和关断状态。更为理想的是,薄膜晶体管的导通电阻小到与发光元件的导通电阻相比是可忽略的程度。此时,流过发光元件的电流只由发光元件的导通电阻来决定,薄膜晶体管的导通电阻多少有点增减都没有关系。因此,可抑制因晶体管的电导的不均匀性引起的发光强度的不均匀性。再有,薄膜晶体管的关断电阻最好比发光元件的关断电阻大很多。此时能使发光元件可靠地处于关断状态。
在本发明中,薄膜晶体管最好是用600℃以下的低温工艺来形成的多晶硅薄膜晶体管。由此,可实现廉价且大面积的发光元件,同时可得到能进行发光元件的驱动的高迁移率、高可靠性等的特点。
在本发明中,发光元件最好是由喷射工艺形成的有机场致发光元件。由此,可在屏上以图形刻蚀方式作成实现高发光效率、长寿命等优良特性的有机场致发光元件。
附图的简单说明
图1是与本发明的实施例1有关的TFT-OELD的等效电路图。
图2是与本发明的实施例1有关的TFT-OELD的平面图和剖面图。
图3是示出与本发明的实施例1有关的TFT-OELD的驱动方法的图。
图4是与本发明的实施例2有关的TFT-OELD的等效电路图。
图5是现有的TFT-OELD的等效电路图。
图6是示出现有的TFT-OELD的驱动方法的图。
符号的说明
101 移位寄存器
10210 第0比特的数字信号供给线
10211 第1比特的数字信号供给线
10212 第2比特的数字信号供给线
10213 第3比特的数字信号供给线
1022 模拟信号供给线
10310 第0比特的传送开关
10311 第1比特的传送开关
10312 第2比特的传送开关
10313 第3比特的传送开关
1032 传送开关
10410 第0比特的源线
10411 第1比特的源线
10412 第2比特的源线
10413 第3比特的源线
1042 源线
10510 第0比特的开关晶体管
10511 第1比特的开关晶体管
10512 第2比特的开关晶体管
10513 第3比特的开关晶体管
1052 开关晶体管
10610 第0比特的保持电容
10611 第1比特的保持电容
10612 第2比特的保持电容
10613 第3比特的保持电容
1062 保持电容
10710 第0比特的电流晶体管
10711 第1比特的电流晶体管
10712 第2比特的电流晶体管
10713 第3比特的电流晶体管
1072 电流晶体管
10810 第0比特的有机EL元件
10811 第1比特的有机EL元件
10812 第2比特的有机EL元件
10813 第3比特的有机EL元件
1082 有机EL元件
109 栅线
1090 低位比特用栅线
1091 高位比特用栅线
110 共用电极
111 上侧电极
SR0 第0列的移位寄存器的脉冲
SR1 第1列的移位寄存器的脉冲
D0 第0比特的数字信号
D1 第1比特的数字信号
A 模拟信号
S00 第0列、第0比特的源线的电位
S01 第0列、第1比特的源线的电位
S10 第1列、第0比特的源线的电位
S11 第1列、第1比特的源线的电位
S0 第0列的源线的电位
S1 第1列的源线的电位
G0 第0行的栅线的脉冲
G1 第1行的栅线的脉冲
C000 第0行、第0列、第0比特的保持电容的电位
C001 第0行、第0列、第1比特的保持电容的电位
C010 第0行、第1列、第0比特的保持电容的电位
C011 第0行、第1列、第1比特的保持电容的电位
C100 第1行、第0列、第0比特的保持电容的电位
C101 第1行、第0列、第1比特的保持电容的电位
C110 第1行、第1列、第0比特的保持电容的电位
C110 第1行、第1列、第1比特的保持电容的电位
C00 第0行、第0列的保持电容的电位
C01 第0行、第1列的保持电容的电位
C10 第1行、第0列的保持电容的电位
C11 第1行、第1列的保持电容的电位
用于实施发明的最佳形态
以下,根据附图说明本发明的优选实施形态。
(实施例1)
图1是与本发明的实施例1有关的TFT-OELD的等效电路图。在此,只图示了1个象素,但实际上存在多行、多列的多个象素。
从移位寄存器101输出脉冲,第0~3比特的数字信号供给线10210-10213的数字信号分别通过第0~3比特的传送开关10310~10313分别传递到第0~3比特的源线10410~10413上。即,将数字信号传递到各象素中。相对于此时被选择的栅线109,数字信号分别通过第0~3比特的开关晶体管10510~10513分别传递到第0~3比特的保持电容10610~10613上。薄膜晶体管、即电流晶体管10710~10713与电流元件、即有机EL元件10810~10813分别串联地连接。因此,由数字信号来控制第0~3比特的电流晶体管10710~10713的导通、关断,第0~3比特的有机EL元件10810~10813对应于数字信号发光或不发光。
图2中示出与本发明的实施例1有关的TFT-OELD的平面图和剖面图。
由于作为发光元件的第0~3比特的有机EL元件10810~10813的面积各不相同,故发光强度各不相同。可实现所谓的面积灰度等级方式。此外,该面积、即发光强度成为公比2的等比数列,结果在每个象素中也内置了DA变换器的功能。
在此,作为构成移位寄存器101、第0~3比特的传送开关10310~10313、第0~3比特的开关晶体管10510~10513和电流晶体管10710~10713等的薄膜晶体管,使用了用600℃以下的低温工艺形成的多晶硅薄膜晶体管。但是,如果是具有与其同等的功能的器件,即使是其它的元件也没有关系。此外,作为第0~3比特的有机EL元件10810~10813的构成要素的有机半导体膜是使液状的材料从喷射头喷出而形成的,即使用了所谓的喷射工艺。但是,或者用其它的工艺形成,或者是有机EL元件以外的电流发光元件,也没有关系。
图3中示出与本发明的实施例1有关的TFT-OELD的驱动方法的图。
利用第0列的移位寄存器的脉冲SR0将第0和第1比特的数字信号D0和D1传递到第0列、第0和第1比特的源线的电位S00和S01上。此外,利用第1列的移位寄存器的脉冲SR1将第0和第1比特的数字信号D0和D1传递到第1列、第0和第1比特的源线的电位S10和S11上。首先,在施加了第0行的栅线的脉冲G0时,将第0列、第0和第1比特的源线的电位S00和S01传递到第0行、第0列、第0和第1比特的保持电容的电位C000上和C001上,将第1列、第0和第1比特的源线的电位S10和S11传递到第0行、第1列、第0和第1比特的保持电容的电位C010和C011上。其次,在施加了第1行的栅线的脉冲时,将第0列、第0和第1比特的源线的电位S00和S01传递到第1行、第0列、第0和第1比特的保持电容的电位C100上和C101上,将第1列、第0和第1比特的源线的电位S10和S11传递到第1行、第1列、第0和第1比特的保持电容的电位C110和C111上。按照各保持电容的电位、即对应的数字信号,各有机EL元件成为预定的发光或不发光。
在此,导通状态的电流晶体管的电阻小到与导通状态的有机EL元件的电阻相比是可忽略的程度。因此,流过有机EL元件的电流只由有机EL元件相对于共用电极110与上侧电极111间的电压的电阻来决定,电流晶体管的电阻多少有点增减都没有关系。故可抑制因晶体管的电导的不均匀性引起的发光强度的不均匀性。此外,关断状态的电流晶体管的电阻比关断状态的有机EL元件的电阻大很多。因此,能使有机EL元件可靠地处于关断状态。
(实施例2)
图4是与本发明的实施例2有关的TFT-OELD的等效电路图。
本实施例的TFT-OELD的工作、功能、效果大致与实施例1相同。但是,在本实施例中,将栅线109分为低位比特用栅线1090和高位比特用栅线1091,各自担当第0和第1比特以及第2和第3比特的功能。由此,可使数字供给线的条数、每列的传送开关和源线的条数从4减少到2。但是,要将栅线的扫描信号、移位寄存器的脉冲和数字信号的频率增大一倍。
(应用例)
由于本发明的目的在于在电流发光显示元件中降低因晶体管的电导的不均匀性引起的发光元件的发光强度的不均匀性,故与「背景技术」项目中叙述的液晶显示元件的面积灰度等级方式在本质上是不同的。实际上,在电流发光显示元件中,只要发光强度不同,就没有必要使面积不同。但是,在该结构中,能见到类似的方面。因此,相对于液晶显示元件的面积灰度等级方式而发表的许多实施例可适用于本发明的灰度等级方式,能预期得到与该发表的文章中记述的相同的效果。
产业上的利用可能性
因为本发明具有上述的效果,故可适用于具备利用晶体管和电流而发光的元件的显示装置。作为发光元件,例如可举出有机场致发光元件。此外,应用了本发明的显示装置不仅可用于个人使用的个人计算机、携带型电子笔记本,也可用于室外的大型揭示板、广告板等信息显示装置。
Claims (6)
1.一种显示元件,该显示元件具有多条扫描线、多条信号线以及由上述扫描线和上述信号线形成为矩阵状的象素,在上述象素中形成了多个薄膜晶体管和多个发光元件,该显示装置的特征在于:
分别串联地连接上述薄膜晶体管和上述发光元件,上述发光元件的发光强度各不相同。
2.如权利要求1中所述的显示元件,其特征在于:
上述发光元件的发光、不发光由数字信号来控制。
3.如权利要求1中所述的显示元件,其特征在于:
上述发光元件的发光强度是公比为2的等比数列。
4.如权利要求1中所述的显示元件,其特征在于:
上述薄膜晶体管的导通电阻比上述发光元件的导通电阻小,上述薄膜晶体管的关断电阻比上述发光元件的关断电阻大。
5.如权利要求1中所述的显示元件,其特征在于:
上述薄膜晶体管是用600℃以下的低温工艺形成的多晶硅薄膜晶体管。
6.如权利要求1中所述的显示元件,其特征在于:
上述发光元件是用喷射工艺形成的有机场致发光元件。
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EP (1) | EP0949603B1 (zh) |
JP (1) | JPH1173158A (zh) |
KR (1) | KR100594828B1 (zh) |
CN (1) | CN1146849C (zh) |
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-
1997
- 1997-08-28 JP JP9233107A patent/JPH1173158A/ja active Pending
-
1998
- 1998-08-24 TW TW087113913A patent/TW385420B/zh not_active IP Right Cessation
- 1998-08-25 WO PCT/JP1998/003756 patent/WO1999012150A1/ja active IP Right Grant
- 1998-08-25 US US09/297,263 patent/US6518941B1/en not_active Expired - Lifetime
- 1998-08-25 CN CNB988015862A patent/CN1146849C/zh not_active Expired - Lifetime
- 1998-08-25 DE DE69833257T patent/DE69833257T2/de not_active Expired - Lifetime
- 1998-08-25 EP EP98938969A patent/EP0949603B1/en not_active Expired - Lifetime
- 1998-08-25 KR KR1019997003441A patent/KR100594828B1/ko not_active IP Right Cessation
-
2002
- 2002-12-18 US US10/321,656 patent/US7236164B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100507996C (zh) * | 2001-12-20 | 2009-07-01 | 皇家飞利浦电子股份有限公司 | 有源矩阵电致发光显示器件 |
CN100407267C (zh) * | 2002-04-24 | 2008-07-30 | 精工爱普生株式会社 | 电子元件的控制电路、电子电路、电光学装置、电光学装置的驱动方法和电子设备与电子元件的控制方法 |
US7872618B2 (en) | 2002-04-24 | 2011-01-18 | Seiko Epson Corporation | Control circuit for electronic devices, electronic circuit, electro-optical apparatus, driving method for electro-optical apparatus, electronic system, and control method for electronic devices |
Also Published As
Publication number | Publication date |
---|---|
DE69833257T2 (de) | 2006-09-21 |
KR100594828B1 (ko) | 2006-07-03 |
WO1999012150A1 (fr) | 1999-03-11 |
US20030071772A1 (en) | 2003-04-17 |
CN1146849C (zh) | 2004-04-21 |
EP0949603A4 (en) | 2000-12-06 |
EP0949603A1 (en) | 1999-10-13 |
JPH1173158A (ja) | 1999-03-16 |
KR20000068801A (ko) | 2000-11-25 |
EP0949603B1 (en) | 2006-01-18 |
TW385420B (en) | 2000-03-21 |
US6518941B1 (en) | 2003-02-11 |
US7236164B2 (en) | 2007-06-26 |
DE69833257D1 (de) | 2006-04-06 |
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