CN114242562A - Method for preventing single-side chemical plating leakage and semiconductor device manufacturing method - Google Patents
Method for preventing single-side chemical plating leakage and semiconductor device manufacturing method Download PDFInfo
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- CN114242562A CN114242562A CN202111300105.5A CN202111300105A CN114242562A CN 114242562 A CN114242562 A CN 114242562A CN 202111300105 A CN202111300105 A CN 202111300105A CN 114242562 A CN114242562 A CN 114242562A
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- ring
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- taiko
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000007747 plating Methods 0.000 title claims abstract description 54
- 239000000126 substance Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000005520 cutting process Methods 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims description 15
- 238000007772 electroless plating Methods 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- -1 polyethylene Polymers 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 229910052755 nonmetal Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 29
- 239000000758 substrate Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 241001050985 Disco Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
Abstract
The invention is designed aiming at the problem that the wafer thinned by adopting the Taiko process needs to be subjected to single-side chemical plating, mainly aims to avoid the leakage problem in the single-side chemical plating link, relates to a method for avoiding the leakage of the single-side chemical plating and a semiconductor device manufacturing method, and is characterized in that the wafer forming the Taiko ring is loaded on a fixed frame, the surface of the Taiko ring is adhered to a loading film in the middle of the fixed frame, and the outer ring of the loading film is fixed by a rigid supporting ring; and performing ring cutting on the fixed wafer, removing the Taiko ring on the wafer, and then putting the wafer which is still loaded on the fixed frame after ring cutting and the fixed frame into plating solution together for single-side chemical plating. Compared with the existing single-side chemical plating process method, the invention omits the film pasting before chemical plating and the film uncovering process after chemical plating, advances the ring cutting after chemical plating in the original process to the process before chemical plating, eliminates the liquid leakage influence caused by Taiko ring, simplifies the process, and improves the appearance and application reliability of the product.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for avoiding single-side chemical plating liquid leakage and a semiconductor device manufacturing method.
Background
Clip packaging is a common packaging form of a power device IGBT and has the advantages of good contact, good heat dissipation block and good temperature rise. Chemical plating is a necessary process in the Clip packaging process, and the chemical plating is divided into single-sided plating and double-sided plating. Taking IGBT production as an example, after a unit structure of an IGBT device is formed on a substrate, a front metal layer is formed on the front surface of the substrate, the substrate is thinned, a collector region is formed on the back surface of the substrate, before a target metal layer is formed on the front surface by single-surface chemical plating, a film is coated on the back surface of a wafer, a UV film is usually adopted, the back metal layer is prevented from contacting with a chemical agent by a protective film, and after the chemical plating is completed, the film is removed.
The substrate is thinned by adopting a Taiko thinning process in the process of manufacturing the IGBT, the process is developed and researched by the Japan DISCO, the Taiko thinning process does not thin the whole surface of a certain surface of a wafer, but only thins the middle part of the wafer, so that a circle of thicker support ring is formed at the edge of the wafer, the support ring is usually called a Taiko ring, particularly for the wafer with larger size (such as 8 inches), the subsequent process is influenced by the warping problem after thinning, therefore, the reserved Taiko ring is beneficial to reducing the warping of the wafer, and the transmission requirement on a post-process processing machine and the wafer breakage risk are greatly reduced.
In the existing IGBT manufacturing process, a back thinning process is usually performed after a front process of a wafer is completed, a collector electrode is formed by ion implantation, activation and a back PVD process, then a film is attached to the back of the wafer for protection, a protective film is removed after a chemical plating process is performed, then the wafer is fixed on a frame for a ring cutting process (i.e., a Taiko ring is cut), and finally the wafer is subjected to scribing and shipment packaging. As shown in fig. 1, the wafer is subjected to a Taiko thinning process to form the structure shown in fig. 1, that is, a middle thinning portion 1 and a Taiko ring 2 at the edge, and a step is formed at the joint of the Taiko ring 2 and the middle thinning portion 1, in the existing single-sided chemical plating process, when a film is pasted on the back surface of the wafer, the Taiko ring 2 is already formed, due to the existence of the step difference of the Taiko ring 2, a protective film 3 pasted on the back surface of the wafer cannot be well pasted with the wafer, and the step of the Taiko ring 2 is easily subjected to a liquid leakage problem in a chemical plating solution (shown by a circle in fig. 1), so that a metal layer on the back surface of the wafer is contacted with a chemical agent, and certain influence is caused on the appearance of a product and the reliability of application. In view of the above, the present invention provides an improvement on the conventional IGBT process, and particularly an improvement on the prevention of liquid leakage in a single-sided electroless plating process.
Disclosure of Invention
The invention firstly discloses a method for avoiding the leakage of single-side chemical plating, which omits the film pasting step before the chemical plating and the film uncovering step after the chemical plating, simplifies the production process, saves the manufacturing cost and can effectively avoid the leakage problem in the single-side chemical plating link.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a method for avoiding single-sided electroless plating liquid leakage comprises the following steps: loading the wafer forming the Taiko ring on a fixed frame, enabling the surface of the Taiko ring to be adhered to a loading film in the middle of the fixed frame, and fixing the outer ring of the loading film by using a rigid support ring; and performing ring cutting on the fixed wafer, removing the Taiko ring on the wafer, and then putting the wafer which is still loaded on the fixed frame after ring cutting and the fixed frame into plating solution together for single-side chemical plating.
Furthermore, the rigid support ring is a metal ring, and the exterior of the metal ring is coated with a corrosion-resistant non-metal material.
Further, the metal ring is externally coated with polyethylene.
Further, the rigid support ring is a corrosion-resistant non-metallic ring.
Further, the loaded film is adhesive and corrosion resistant.
Further, the loading membrane adopts a UV membrane.
The invention also discloses a manufacturing method of the semiconductor device, which comprises the method for avoiding the single-side chemical plating liquid leakage.
And further, scribing the wafer after the single-side chemical plating is finished.
Further, when the wafer is diced, the wafer surface which is not adhered by the loaded film is diced by directly using the fixing frame loaded with the wafer as a fixing carrier.
Further, the semiconductor device is an IGBT.
The invention is designed aiming at the situation that the wafer thinned by adopting the Taiko thinning process needs to be subjected to single-side chemical plating, and mainly aims to avoid the problem of liquid leakage in the single-side chemical plating process.
Drawings
FIG. 1 is a schematic view of a Taiko ring and a protective film attached to a wafer surface in the prior art;
FIG. 2 is a schematic structural diagram of a thinned wafer loaded on a mount by the method of the present invention before circular cutting;
FIG. 3 is a top view of FIG. 2;
FIG. 4 is a schematic view of a wafer mounted on a holder after ring-cutting by the method of the present invention;
FIG. 5 is a top view of FIG. 4;
fig. 6 is a flowchart of manufacturing an IGBT by the manufacturing method of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The embodiment discloses a method for avoiding single-side chemical plating liquid leakage and a manufacturing method of a semiconductor device. The method for avoiding the leakage of the single-sided chemical plating is not only suitable for the IGBT manufacturing process, but also suitable for the single-sided chemical plating operation of the wafer thinned by the Taiko thinning process.
As shown in fig. 6, in the conventional process of the IGBT, a device structure layer is formed on the front surface of a substrate wafer, and then the back surface of the wafer is thinned, which is mainly implemented by a Taiko thinning process in the prior art, and a collector is formed on the back surface of the wafer by ion implantation, activation, back surface PVD and other processes after thinning. After the collector electrode is formed on the back surface of the wafer, the front surface of the wafer needs to be subjected to single-side chemical plating treatment, and at this time, because the metal layer is already formed on the back surface of the wafer, in order to avoid the influence of the plating solution on the back surface of the wafer during single-side chemical plating, a back surface film pasting mode is usually adopted for protection. However, due to the existence of the Taiko ring formed by the Taiko thinning process, the step of the Taiko ring cannot be well adhered to the attached protective film, and once a gap is formed, the plating solution can penetrate from the position to the back surface of the wafer, so that the product quality is affected. Therefore, before performing the single-sided electroless plating, the Taiko ring is cut (corresponding to the ring cutting process), and then the single-sided electroless plating operation is performed.
When the circular cutting process is performed, the wafer needs to be fixed, and in this embodiment, the wafer is loaded and fixed by using the fixing frame. The fixing frame is shown in fig. 2 and comprises a loading film in the middle and a rigid supporting ring 7 for fixing the outer ring of the loading film. The loading film needs to have acid and alkali corrosion resistance and single-side adhesion and is mainly used for fixing the wafer, and the loading film can be a UV film. The rigid support ring 7 tightens and fixes the edge of the outer ring of the loading film to form a film tightening frame structure. When a wafer is loaded, the surface of the Taiko ring on the back surface of the wafer is adhered to the loading film, as shown in fig. 2 and 3, the loading film after the wafer is fixed can be regarded as three parts, wherein the part tightly attached to the wafer thinning part 1 is an attaching part 4, the part contacting with the Taiko ring is an inserting part 5 of the Taiko ring, and the part connected with the rigid support ring 7 is an edge connecting part 6. Because the fixing frame loaded with the wafer needs to be placed into the plating solution together with the wafer after the ring cutting process, the rigid support ring 7 is usually made of a metal ring, such as a stainless steel ring, and if the metal ring is adopted, the outer surface of the metal ring needs to be treated, i.e., coated with a layer of corrosion-resistant non-metallic material, such as polyethylene, in order to prevent the metal ring from reacting with the plating solution to pollute the plating solution. Of course, the rigid support ring 7 can also be made directly from a corrosion-resistant non-metallic ring.
After the wafer is loaded on the holder according to the above method, a ring cutting process is performed to cut off the Taiko ring 2, i.e., to separate the Taiko ring 2 from the thinned portion 1, and then the cut-off Taiko ring 2 is removed from the loading film. The structure after ring cutting is shown in fig. 4 and fig. 5, at this time, the Taiko ring 2 does not exist, the thinning part 1 and the attaching part 4 of the loading film are closely adhered together, and the wafer still loaded on the fixed frame after ring cutting and the fixed frame are put into the plating solution for single-side chemical plating. In the original process, the back side is pasted with a film before chemical plating, film uncovering treatment is needed after chemical plating, a circular cutting process is needed after film uncovering, and a wafer is fixed firstly during circular cutting. In this embodiment, the wafer is fixed by the fixing frame with the loading film before the chemical plating, so that after the chemical plating is performed, the fixing frame and the wafer are taken out from the plating solution, and then the wafer scribing process is performed on the front surface (i.e. the surface which is not loaded and adhered) of the wafer. In the embodiment, because the wafer after chemical plating is still loaded on the fixing frame, the loading film on the fixing frame already plays a role in fixing the wafer, the wafer is not required to be cut and then fixed by film pasting again, a plurality of working procedures can be saved in the process steps, the production efficiency is improved, and the consumption of the film is also saved.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A method for avoiding single-side chemical plating liquid leakage is characterized by comprising the following steps: loading the wafer forming the Taiko ring on a fixed frame, enabling the surface of the Taiko ring to be adhered to a loading film in the middle of the fixed frame, and fixing the outer ring of the loading film by using a rigid support ring; and performing ring cutting on the fixed wafer, removing the Taiko ring on the wafer, and then putting the wafer which is still loaded on the fixed frame after ring cutting and the fixed frame into plating solution together for single-side chemical plating.
2. The method for avoiding the liquid leakage of the single-sided electroless plating according to claim 1, wherein the method comprises the following steps: the rigid support ring is a metal ring, and the outside of the metal ring is coated by a corrosion-resistant non-metal material.
3. The method for avoiding the liquid leakage of the single-sided electroless plating according to claim 2, wherein the method comprises the following steps: the metal ring is externally coated with polyethylene.
4. The method for avoiding the liquid leakage of the single-sided electroless plating according to claim 1, wherein the method comprises the following steps: the rigid support ring is a corrosion-resistant non-metallic ring.
5. The method for avoiding the liquid leakage of the single-sided electroless plating according to claim 1, wherein the method comprises the following steps: the loaded film is adhesive and corrosion resistant.
6. The method for avoiding the liquid leakage of the single-sided electroless plating according to claim 5, wherein the method comprises the following steps: the loading film adopts a UV film.
7. A semiconductor device manufacturing method characterized by: comprises the method for avoiding the leakage of the single-sided electroless plating solution according to any one of the claims 1 to 6.
8. A semiconductor device manufacturing method according to claim 7, wherein: and after the single-side chemical plating is finished, scribing the wafer.
9. A semiconductor device manufacturing method according to claim 8, wherein: when the wafer is diced, the wafer surface which is not adhered by the loaded film is diced by directly using the fixing frame loaded with the wafer as a fixing carrier.
10. A semiconductor device manufacturing method according to claim 7, wherein: the semiconductor device is an IGBT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111300105.5A CN114242562A (en) | 2021-11-04 | 2021-11-04 | Method for preventing single-side chemical plating leakage and semiconductor device manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111300105.5A CN114242562A (en) | 2021-11-04 | 2021-11-04 | Method for preventing single-side chemical plating leakage and semiconductor device manufacturing method |
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| CN114242562A true CN114242562A (en) | 2022-03-25 |
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| CN202111300105.5A Pending CN114242562A (en) | 2021-11-04 | 2021-11-04 | Method for preventing single-side chemical plating leakage and semiconductor device manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114899126A (en) * | 2022-04-19 | 2022-08-12 | 绍兴中芯集成电路制造股份有限公司 | Wafer single-side electroless plating method, semiconductor device manufacturing method, and semiconductor device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276740A (en) * | 2007-03-30 | 2008-10-01 | 万国半导体股份有限公司 | Method of forming ultra thin chips of power devices |
| CN104934309A (en) * | 2014-03-18 | 2015-09-23 | 株式会社迪思科 | Wafer processing method |
| CN111540683A (en) * | 2020-05-29 | 2020-08-14 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of power device |
| TW202103227A (en) * | 2019-07-10 | 2021-01-16 | 昇陽國際半導體股份有限公司 | Taiko wafer ring cut process method |
| CN112571837A (en) * | 2020-11-25 | 2021-03-30 | 东莞市微科光电科技有限公司 | UV film heating film pressing method |
-
2021
- 2021-11-04 CN CN202111300105.5A patent/CN114242562A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276740A (en) * | 2007-03-30 | 2008-10-01 | 万国半导体股份有限公司 | Method of forming ultra thin chips of power devices |
| CN104934309A (en) * | 2014-03-18 | 2015-09-23 | 株式会社迪思科 | Wafer processing method |
| TW202103227A (en) * | 2019-07-10 | 2021-01-16 | 昇陽國際半導體股份有限公司 | Taiko wafer ring cut process method |
| CN111540683A (en) * | 2020-05-29 | 2020-08-14 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of power device |
| CN112571837A (en) * | 2020-11-25 | 2021-03-30 | 东莞市微科光电科技有限公司 | UV film heating film pressing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114899126A (en) * | 2022-04-19 | 2022-08-12 | 绍兴中芯集成电路制造股份有限公司 | Wafer single-side electroless plating method, semiconductor device manufacturing method, and semiconductor device |
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