CN114899126B - Wafer single-sided chemical plating method, semiconductor device manufacturing method and semiconductor device - Google Patents
Wafer single-sided chemical plating method, semiconductor device manufacturing method and semiconductor device Download PDFInfo
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- CN114899126B CN114899126B CN202210407375.4A CN202210407375A CN114899126B CN 114899126 B CN114899126 B CN 114899126B CN 202210407375 A CN202210407375 A CN 202210407375A CN 114899126 B CN114899126 B CN 114899126B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明涉及晶圆单面化学镀方法、半导体器件制造方法及半导体器件，晶圆单面化学镀方法包括：提供一侧形成Taiko环的晶圆；提供刚性支撑板；将Taiko环的端面与刚性支撑板紧密相连；将紧密相连的晶圆以及刚性支撑板进行化学镀处理；分离化学镀处理后的晶圆与刚性支撑板。利用该单面化学镀方法可进行采用Taiko减薄工艺减薄后的晶圆单面化学镀处理，省去了现有化学镀工艺前后的贴膜和揭膜工序，避免了原有化学镀贴膜工艺漏液的发生；采用刚性支撑板与晶圆的Taiko环的端面进行粘接，有助于减小单面化学镀时晶圆的翘曲度，可以显著降低晶圆单面化学镀后片内色差，对产品的外观及应用的可靠性都有所提升。
The invention relates to a wafer single-sided chemical plating method, a semiconductor device manufacturing method and a semiconductor device. The wafer single-sided chemical plating method comprises: providing a wafer with a Taiko ring formed on one side; providing a rigid support plate; closely connecting the end face of the Taiko ring with the rigid support plate; performing chemical plating treatment on the closely connected wafer and the rigid support plate; and separating the wafer after chemical plating from the rigid support plate. The single-sided chemical plating method can be used to perform single-sided chemical plating treatment on a wafer thinned by a Taiko thinning process, thereby eliminating the film sticking and film peeling procedures before and after the existing chemical plating process, and avoiding the occurrence of liquid leakage in the original chemical plating film sticking process; the rigid support plate is used to bond the end face of the Taiko ring of the wafer, which helps to reduce the warpage of the wafer during single-sided chemical plating, and can significantly reduce the color difference within the wafer after single-sided chemical plating, thereby improving the appearance of the product and the reliability of application.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer single-sided electroless plating method, semiconductor device manufacturing and a semiconductor device.
Background
Electroless plating is a common process in semiconductor manufacturing and can be classified into single-sided plating and double-sided plating. Particularly, for the single-sided electroless plating process, a film is required to be coated on the back surface of the wafer, a UV film is generally adopted, a protective film is used to prevent the back metal layer from contacting with chemical agents, and the film is removed after the electroless plating is completed. The wafer is usually thinned before electroless plating, and the Taiko thinning process is developed by DISCO in japan, and is not to thin the whole surface of a certain surface of the wafer, but only to thin the middle part of the wafer, so that the edge of the wafer forms a thicker ring, which is generally called as Taiko ring.
As shown in fig. 1, after a wafer is subjected to a Taiko thinning process, the structure in fig. 1 is formed, that is, a middle thinning portion 1 and a Taiko ring 2 at the edge are formed, a step is formed at the joint of the Taiko ring 2 and the middle thinning portion 1, in the existing single-sided chemical plating process, when the back of the wafer is coated, the Taiko ring 2 is formed, because of the step difference of the Taiko ring 2, a protective film 3 attached to the back of the wafer cannot be well attached to the wafer, and the step of the Taiko ring 2 is in an electroless plating solution, so that a leakage problem (shown by a circle in fig. 1) is easy to occur, which leads to contact between a metal layer on the back of the wafer and a chemical agent, and can cause a certain influence on the appearance and the reliability of the application of the product.
Moreover, for large-size (e.g., 8 inch) wafers, the wafer warpage is more pronounced after thinning, and the Taiko ring remaining after the thinning process is completed has some effect on wafer warpage improvement, but for devices such as IGBT die larger, even if the Taiko ring is present, the wafer still has some warpage. The existing single-sided chemical plating operation is protected by pasting a protective film on the back of the wafer, so that the protective film is soft and has no rigidity, and the warping effect of the wafer cannot be further eliminated. In single-sided electroless plating operation, the electroless plating solution exchange and cleaning effects at the warped edge of the wafer are poor, which easily causes the problem of chromatic aberration in the wafer, and the chromatic aberration is more serious for larger-sized (e.g., 12 inch) wafers.
Disclosure of Invention
The invention firstly discloses a single-sided chemical plating method of a wafer, which omits a film pasting step before chemical plating and a film uncovering step after chemical plating, simplifies the production process, and effectively avoids the problem of liquid leakage and the problem of color difference in the wafer during single-sided chemical plating.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a wafer single-sided electroless plating method comprises the following steps:
providing a wafer with one side forming a Taiko ring;
Providing a rigid support plate;
tightly connecting the end face of the Taiko ring with the rigid support plate;
carrying out electroless plating treatment on the tightly connected wafers and the rigid support plates;
Separating the wafer after the electroless plating treatment from the rigid support plate.
Further, closely connecting the end face of the Taiko ring with the rigid support plate includes coating temporary bonding glue on one side surface of the rigid support plate and/or the end face of the Taiko ring, bonding the end face of the Taiko ring with the rigid support plate, and then curing.
Further, the temporary bonding glue comprises photosensitive glue and LTHC coating liquid, and the rigid support plate adopts a light-transmitting plate;
The LTHC coating liquid is coated on one side surface of the rigid supporting plate, and then is cured for the first time to form an LTHC coating;
And coating the photosensitive adhesive on the end face of the Taiko ring, bonding the side, provided with the LTHC coating, of the rigid support plate with the photosensitive adhesive on the end face of the Taiko ring, and then performing secondary curing.
Further, the rigid supporting plate adopts a light-transmitting glass plate or a light-transmitting acrylic plate.
Further, the first curing adopts a heating curing mode, the temperature of the first curing is 220 ℃ to 300 ℃, and the time of the first curing is 200s to 300s.
Further, the second curing adopts a mode of ultraviolet irradiation curing.
Further, the wafer and the rigid support plate after the electroless plating treatment are separated by a laser irradiation mode.
The invention also discloses a manufacturing method of the semiconductor device, which comprises the wafer single-sided electroless plating method.
The invention further discloses a semiconductor device manufactured by the manufacturing method of the semiconductor device.
Further, the semiconductor device is an IGBT.
The wafer back surface is shielded by bonding the rigid support plate on the end surface of the wafer back surface Taiko ring, compared with the prior art that the single-surface chemical plating adopts a film pasting protection mode, the method omits a film pasting process on the wafer protection surface before chemical plating, omits a film uncovering process after chemical plating, effectively avoids leakage of the prior chemical plating film pasting process, and is beneficial to reducing the warping degree of the wafer during single-surface chemical plating, remarkably reducing the color difference in the wafer after single-surface chemical plating, and improving the appearance and the application reliability of products.
Drawings
FIG. 1 is a schematic view of a prior art Taiko ring and a protective film attached to a wafer surface;
FIG. 2 is a flow chart of a single-sided electroless plating method in an embodiment of the invention;
fig. 3a to 3e are views showing a device structure at different process stages in the single-sided electroless plating method according to the present invention, wherein:
FIG. 3a is a schematic view of a wafer with a Taiko ring formed and a rigid support plate;
FIG. 3b is a schematic illustration of a rigid support plate with a LTHC coating formed on one side thereof;
FIG. 3c is a schematic view of a wafer Taiko ring coated with a photosensitive paste on the end face;
FIG. 3d is a schematic view of the structure after bonding the rigid support plate to the end face of the wafer Taiko ring;
fig. 3e is a schematic view of the structure of separating the wafer from the rigid support plate after single-sided electroless plating.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The embodiment firstly discloses a single-sided chemical plating method for a wafer, which is applicable to all the processes of single-sided chemical plating of the wafer thinned by adopting a Taiko thinning process. Referring to fig. 2 and 3a to 3e, the wafer single-sided electroless plating method includes the following steps:
step S100, providing a wafer with one side forming a Taiko ring and providing a rigid supporting plate;
Step 200, tightly connecting the end face of the Taiko ring with a rigid supporting plate;
Step 300, carrying out chemical plating treatment on the tightly connected wafers and the rigid support plates;
and S400, separating the wafer subjected to the electroless plating treatment from the rigid support plate.
In the above method, the rigid support plate 200 is a rigid plate, which is tightly connected to the end surface of the Taiko ring 2 of the wafer 100, so that the back surface of the wafer 100 is sealed and protected from exposure, and the chemical plating operation can be directly performed without film sticking. In addition, compared with the protective film 3 in the prior art, the rigid support plate 200 can play a role in reducing the warpage of the thinned wafer 100, so that the wafer 100 can keep a flat surface during single-sided chemical plating, and the problem of chromatic aberration in a plating layer can be eliminated.
The single-sided electroless plating method is described in further detail below with reference to fig. 3a to 3e, and specific examples given below.
In step S100, as shown in fig. 3a, the wafer 100 on which the Taiko ring 2 has been formed has an inner portion, i.e., the middle thinned portion 1, surrounded by the Taiko ring 2, and the Taiko ring 2 needs to be cut off after the single-sided electroless plating, so that the middle thinned portion 1 needs to be protected in the single-sided electroless plating process. A rigid support plate 200 is additionally provided so that the back surface of the wafer 100 is protected by covering the intermediate thinned portion 1 with the rigid support plate 200.
In step S200, the tight connection of the end face of the Taiko ring 2 to the rigid support plate 200 is achieved by applying a temporary bonding glue on the connection face of the two. The temporary bonding glue is coated on one side surface of the rigid support plate 200, or the temporary bonding glue is coated on the end surface of the Taiko ring 2, or the surface of the rigid support plate 200 and the end surface of the Taiko ring 2 are respectively coated with the temporary bonding glue, if the final coating mode is adopted, the temporary bonding glue on the rigid support plate 200 and the temporary bonding glue on the end surface of the Taiko ring 2 may not be the same. The end face of the Taiko ring 2 according to the present invention refers to the upper surface of the Taiko ring 2 in the direction shown in fig. 1. After the rigid support plate 200 is bonded to the end face of the Taiko ring 2 of the wafer 100, a curing process is performed to ensure firm connection.
As a further explanation of step S200, the temporary bonding glue may be selected in various types, but in consideration of avoiding the temporary bonding glue coated on the wafer 100 from being heated, baked and cured, the wafer 100 may aggravate warpage and parameter deterioration in a high-temperature environment, so the temporary bonding glue coated on the wafer 100 should be cured at normal temperature, and the de-bonding mode is relatively simple and does not need to be performed in a high-temperature link. The following is a further description of the invention by means of a preferred embodiment, with reference to fig. 3 a-3 e:
Example 1:
In the step (1), the wafer 100 with the Taiko ring 2 formed is prepared, and the rigid support plate 200 is prepared, wherein the rigid support plate 200 in the embodiment adopts a light-transmitting plate, so that the curing and bonding release of the temporary bonding glue can be realized conveniently through a light irradiation mode, and a plate material with light transmission and certain rigidity such as a light-transmitting glass plate or a light-transmitting acrylic plate can be met, and the light-transmitting plate material has certain acid and alkali corrosion resistance.
And (2) selecting temporary bonding glue, wherein the temporary bonding glue selected in the embodiment comprises photosensitive glue 5 and LTHC coating liquid. The photosensitive paste 5 can be cured by ultraviolet irradiation, and the LTHC coating liquid can be easily unbound by laser irradiation.
The LTHC (Light-To-Heat-Conversion) coating liquid is a photo-thermal Conversion coating liquid manufactured by 3M company, has a certain viscosity at normal temperature, but has a weak viscosity, and after curing, the viscosity of the LTHC coating 4 is enhanced. The LTHC coating 4 is irradiated with laser light at normal temperature to easily separate the rigid support plate 200 from the photosensitive paste 5 on the wafer 100 at normal temperature without stress, thereby separating the rigid support plate 200 and the wafer 100 from each other. The main components of the LTHC coating liquid include acetic acid-1-methoxy-2-propyl ester, 2-butoxyethanol, carbon black, silica, styrene and acrylic acid polymer.
The inventors found that although LTHC coating liquids also have some tackiness at normal temperature, tackiness is weak, and if only LTHC coating 4 is present between wafer 100 and rigid support plate 200, it is easily separated during single-sided electroless plating, and high temperature curing can enhance tackiness, but the thermal process can affect wafer warpage and device parameters. Although the photosensitive paste 5 has strong adhesiveness, it is difficult to remove, and if only the photosensitive paste 5 is difficult to be unbound between the wafer 100 and the rigid support plate 200, the two are used in combination in this embodiment.
And (3) spin-coating a layer of LTHC coating liquid on one side surface of the rigid support plate 200, and then performing a first curing to form the LTHC coating 4, wherein the purpose of the first curing is to form a stable adhesion of the LTHC coating 4 on the surface of the rigid support plate 200, and the wafer 100 is not involved at this time, so that the first curing adopts a high-temperature heating curing mode and does not cause any influence on the wafer 100. The temperature of the first curing in the embodiment is 220-300 ℃, and the time of the first curing is 200-300 seconds.
And (4) coating the photosensitive adhesive 5 on the end face of the Taiko ring 2 of the wafer 100.
The order of the steps (3) and (4) may be changed or may be performed simultaneously.
The LTHC coating liquid selected in this embodiment is only suitable for coating on the surface of the rigid support plate 200, but not suitable for coating on the end face of the Taiko ring 2, because the curing mode of the LTHC coating liquid is high temperature heating, if the LTHC coating liquid is applied to the end face of the Taiko ring 2, the warpage and parameters of the wafer 100 will be affected during high temperature curing, and the LTHC coating 4 formed on the end face of the Taiko ring 2 is difficult to remove, which usually requires an alkaline solution cleaning method.
And (5) the surface of the rigid support plate 200 with the LTHC coating 4 which is used for completing the step (3) is opposite to the end surface of the Taiko ring 2 which is used for completing the step (4), and the two surfaces are bonded together, and then the second curing is carried out. The purpose of the second curing is mainly to increase the adhesiveness of the photosensitive paste 5, so the second curing in this embodiment is implemented by irradiating the photosensitive paste 5 with the uv-transparent rigid support plate 200.
And (6) carrying out single-sided chemical plating treatment on the wafer 100 after the step (5) and the rigid support plate 200, wherein the chemical plating is carried out according to the prior art.
And (7) taking out the wafer 100 and the rigid support plate 200 after the step (6) is completed, airing, and irradiating the LTHC coating 4 in the middle of the wafer 100 and the rigid support plate 200 through laser at normal temperature by using the transparent rigid support plate 200 to enable the LTHC coating 4 to be easily separated from the photosensitive adhesive 5, so that the rigid support plate 200 and the wafer 100 are separated from each other.
After the single-sided electroless plating is completed according to the above method, the Taiko ring 2 is cut off according to the conventional process, and since the subsequent process belongs to the conventional process, it will not be described here too much.
Based on the above-mentioned single-sided electroless wafer plating method, the present embodiment also provides a semiconductor device manufacturing method including the single-sided electroless wafer plating method, and provides a semiconductor device manufactured by using the semiconductor device manufacturing method, which may be, for example, an IGBT, but is not limited to this device.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. The wafer single-sided electroless plating method is characterized by comprising the following steps:
providing a wafer with one side forming a Taiko ring;
providing a rigid support plate, wherein the rigid support plate adopts a light-transmitting plate;
Coating a photosensitive adhesive on the end face of the Taiko ring, bonding one face of the rigid support plate with the LTHC coating with the photosensitive adhesive on the end face of the Taiko ring, and then curing to enable the end face of the Taiko ring to be tightly connected with the rigid support plate;
carrying out electroless plating treatment on the tightly connected wafers and the rigid support plates;
And separating the wafer after the electroless plating treatment from the rigid support plate by adopting a laser irradiation mode.
2. The method of claim 1, wherein the rigid support plate is bonded to the end surface of the Taiko ring and then cured for a second time.
3. The method of claim 1, wherein the rigid support plate is a glass plate or an acrylic plate.
4. The method of single-sided electroless plating of a wafer of claim 2, wherein the first curing is performed by heating, the temperature of the first curing is 220-300 ℃, and the time of the first curing is 200-300 s.
5. The method of single-sided electroless plating of a wafer as claimed in claim 2, wherein the second curing is performed by ultraviolet irradiation.
6. A method for manufacturing a semiconductor device, comprising the wafer single-sided electroless plating method according to any one of claims 1 to 5.
7. A semiconductor device manufactured by the method for manufacturing a semiconductor device according to claim 6.
8. The semiconductor device according to claim 7, wherein the semiconductor device is an IGBT.
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| CN111540683A (en) * | 2020-05-29 | 2020-08-14 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of power device |
| CN111834277A (en) * | 2019-04-17 | 2020-10-27 | 美光科技公司 | Method and apparatus for wafer handling and processing |
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| CN114242562A (en) * | 2021-11-04 | 2022-03-25 | 绍兴中芯集成电路制造股份有限公司 | Method for preventing single-side chemical plating leakage and semiconductor device manufacturing method |
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| CN111834277A (en) * | 2019-04-17 | 2020-10-27 | 美光科技公司 | Method and apparatus for wafer handling and processing |
| CN111540683A (en) * | 2020-05-29 | 2020-08-14 | 上海华虹宏力半导体制造有限公司 | Manufacturing method of power device |
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