CN111070448A - Wafer ring cutting method - Google Patents
Wafer ring cutting method Download PDFInfo
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- CN111070448A CN111070448A CN201911397470.5A CN201911397470A CN111070448A CN 111070448 A CN111070448 A CN 111070448A CN 201911397470 A CN201911397470 A CN 201911397470A CN 111070448 A CN111070448 A CN 111070448A
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- wafer
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- blue film
- edge
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
The invention discloses a wafer ring cutting method, which comprises the following steps: A. adhering the wafer to the blue film; B. selecting a cutting blade; C. and sequentially carrying out annular cutting on the to-be-cut area on the edge of the wafer for multiple times, wherein the adjacent annular cutting areas for two times have coincidence quantity in the radial direction of the wafer. The method comprises the steps of firstly sticking a wafer on a blue film, then selecting a cutting blade, and then sequentially carrying out annular cutting on a region to be cut at the edge of the wafer for many times, wherein the annular cutting regions of two adjacent times have coincidence quantity in the radial direction of the wafer; the method can adopt a thick cutting blade, utilizes multiple annular cutting, completely cuts off the edge part of the wafer into crystal slag which is discharged along with cutting liquid, changes the conventional method of cutting and tearing the film, greatly reduces the wafer fragments, can save a blue film and labor cost, and greatly improves the production efficiency.
Description
Technical Field
The invention relates to the field of semiconductor packaging, in particular to a wafer ring cutting method.
Background
In the semiconductor packaging process, the wafer needs to be back-glued, and the back-gluing mode is generally glue brushing. As shown in fig. 1, the wafer is placed under the glue-brushing template 01, and the glue brushing is performed on the back surface 02 of the wafer, so that the outer edge of the wafer cannot be brushed. When the wafer after the gum is pasted on the blue film for scribing and cutting, the edge of the back of the wafer is not brushed with the gum, so that the edge of the back of the wafer is provided with steps, the blue film cannot be attached to the edge of the back of the wafer, when the wafer is scribed and cut, the edge of the wafer which is not attached to the blue film generates crystal flying, and the condition of damaging the cutting blade is further caused. Therefore, before wafer dicing and cutting, the part of the wafer edge without being brushed with glue needs to be cut off in a ring shape, so as to avoid the problem of flying wafer.
At present, the annular cutting is realized by adopting a diamond blade with the thickness of 0.03-0.1mm, single annular cutting is carried out after alignment, the part of the edge of the wafer, which is not brushed with glue, is separated from the main body of the wafer, and then the blue film on the back of the wafer is torn off, so that the edge part of the wafer is removed. At present, the film is torn manually, the wafer is likely to be broken when the film is torn, the film tearing efficiency is low, and the subsequent process of the wafer needs to stick the film to the wafer again, so that a blue film and labor cost are wasted, and the production cycle and the rhythm are influenced.
Disclosure of Invention
The invention aims to: the wafer ring cutting method is characterized in that a thick cutting blade is adopted, multiple annular cutting is applied, the edge part of a wafer is completely cut off, the membrane is not required to be torn again, wafer breakage is greatly reduced, and one blue membrane and labor cost can be saved.
In order to achieve the purpose, the invention adopts the technical scheme that:
a wafer ring cutting method comprises the following steps:
A. adhering the wafer to the blue film;
B. selecting a cutting blade;
C. and sequentially carrying out annular cutting on the to-be-cut area on the edge of the wafer for multiple times, wherein the adjacent annular cutting areas for two times have coincidence quantity in the radial direction of the wafer.
The method comprises the steps of firstly sticking a wafer on a blue film, then selecting a cutting blade, and then sequentially carrying out annular cutting on a region to be cut at the edge of the wafer for many times, wherein the annular cutting regions of two adjacent times have coincidence quantity in the radial direction of the wafer; the method can adopt a thick cutting blade, utilizes multiple annular cutting, completely cuts off the edge part of the wafer into crystal slag which is discharged along with cutting liquid, changes the conventional method of cutting and tearing the film, greatly reduces the wafer fragments, can save a blue film and labor cost, and greatly improves the production efficiency.
As a preferable aspect of the present invention, the width of the cutting blade is 0.7 to 0.9 mm. Because the radial width of the part to be cut at the edge of the wafer is about 1.7mm, the cutting blade with larger width is adopted, the annular cutting frequency can be greatly reduced, and the annular cutting efficiency is improved.
As a preferable scheme of the invention, the number of the annular cutting is three, and each cutting is 0.6 mm. Through annular cutting thrice, each time cutting 0.6mm, can cut off 1.7 mm's wafer edge fast, compromise annular cutting efficiency and quality.
In a preferred embodiment of the present invention, the total weight is 0.2 mm. Because the adjacent two annular cuts have the superposition amount of 0.2mm in the radial direction of the wafer, the wafer at the junction of the two annular cuts is completely cut off.
As a preferable scheme of the invention, the thickness of the blue film is 75 μm so as to meet the bearing requirement during wafer cutting and avoid the blue film from being damaged.
As a preferable scheme of the invention, the cutting blade cuts into the blue film to a depth of 20 μm during annular cutting, which is beneficial to ensuring that the wafer is completely cut off and the bearing requirement of the blue film is not influenced.
As a preferable scheme of the invention, the edge of the blue film is provided with a cutting clamping ring during annular cutting, so that the wafer annular cutting is carried out by mounting the cutting clamping ring on a workbench.
As a preferable scheme of the invention, the thickness of the cutting clasp is 1.2-1.5 mm.
As a preferable scheme of the invention, the sizes of the cutting snap ring are 6 inches, 8 inches and 12 inches.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. the method comprises the steps of firstly sticking a wafer on a blue film, then selecting a cutting blade, and then sequentially carrying out annular cutting on a region to be cut at the edge of the wafer for many times, wherein the annular cutting regions of two adjacent times have coincidence quantity in the radial direction of the wafer; the method can adopt a thick cutting blade, utilizes multiple annular cutting, completely cuts off the edge part of the wafer into crystal slag which is discharged along with cutting liquid, changes the conventional method of cutting and tearing the film, greatly reduces the wafer fragment, saves a blue film and labor cost, and greatly improves the production efficiency;
2. because the radial width of the part to be cut at the edge of the wafer is about 1.7mm, the cutting blade with the width of 0.7-0.9mm is adopted, the annular cutting times can be greatly reduced, and the annular cutting efficiency is improved;
3. the overlapping amount of the two adjacent annular cuts in the radial direction of the wafer is 0.2mm, so that the wafer at the junction of the two annular cuts is completely cut off;
4. the cutting depth of the cutting blade into the blue film is 20 μm during annular cutting, which is beneficial to ensuring that the wafer is completely cut off and the bearing requirement of the blue film is not influenced.
Drawings
Fig. 1 is a schematic diagram of wafer backside glue in the prior art.
FIG. 2 is a schematic diagram of wafer ring cutting according to the present invention.
The labels in the figure are: 01-glue brushing template, 02-wafer back, 1-cutting snap ring, 2-blue film, 3-wafer, 4-first ring cutting position, 5-second ring cutting position, and 6-third ring cutting position.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Examples
The embodiment provides a wafer ring cutting method;
as shown in fig. 2, the method for cutting a wafer ring in this embodiment includes the following steps:
A. adhering the wafer 3 to the blue film 2;
B. selecting a cutting blade;
C. and sequentially carrying out annular cutting on the to-be-cut area on the edge of the wafer 3 for multiple times, wherein the adjacent annular cutting areas at two times have coincidence quantity in the radial direction of the wafer.
The method comprises the steps of firstly sticking a wafer on a blue film, then selecting a cutting blade, and then sequentially carrying out annular cutting on a region to be cut at the edge of the wafer for many times, wherein the annular cutting regions of two adjacent times have coincidence quantity in the radial direction of the wafer; the method can adopt a thick cutting blade, utilizes multiple annular cutting, completely cuts off the edge part of the wafer into crystal slag which is discharged along with cutting liquid, changes the conventional method of cutting and tearing the film, greatly reduces the wafer fragments, can save a blue film and labor cost, and greatly improves the production efficiency.
In this embodiment, the width of the cutting blade is 0.8 mm. Because the radial width of the part to be cut at the edge of the wafer is about 1.7mm, and the width of the cutting blade is 0.8mm, compared with the existing annular cutting blade with the thickness of 0.03-0.1mm, the cutting blade with larger width is adopted, the annular cutting times can be greatly reduced, and the annular cutting efficiency is improved.
In this embodiment, the number of times of the circular cutting is three, and the cutting width is 0.6mm each time, specifically refer to a circular cutting position one 4, a circular cutting position two 5, and a circular cutting position three 6. Specifically, the circular dicing may be performed from the edge of the wafer toward the center (4 → 5 → 6), or may be performed from the center of the wafer toward the edge (6 → 5 → 4). Through annular cutting thrice, each time cutting 0.6mm, can cut off 1.7 mm's wafer edge fast, compromise annular cutting efficiency and quality.
In this embodiment, the combined weight is 0.2 mm. Because the adjacent two annular cuts have the superposition amount of 0.2mm in the radial direction of the wafer, the wafer at the junction of the two annular cuts is completely cut off.
In this embodiment, the thickness of the blue film 2 is 75 μm to meet the carrying requirement of wafer dicing and avoid the blue film from being damaged.
In the embodiment, the cutting blade cuts into the blue film 2 to a depth of 20 μm during the annular cutting, which is beneficial to ensuring that the wafer is completely cut off and does not affect the bearing requirement of the blue film.
In this embodiment, blue membrane 2 edge is provided with cutting snap ring 1 when annular cutting, specifically is cutting snap ring 1 and blue membrane 2 half bonding, and blue membrane 2 edge pastes on cutting snap ring 1 promptly to through installing the cutting snap ring and carry out brilliant ring shape cutting on the workstation.
In this embodiment, the thickness of the cutting snap ring 1 is 1.2-1.5mm, and the requirement that the cutting snap ring can be connected with a workbench is met.
In this embodiment, the size of the cutting clasp 1 is 6 inches, 8 inches, 12 inches. The cutting clamp rings with various specifications and sizes are arranged, so that the requirements of cutting wafers with various specifications and sizes are met.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. A wafer ring shape cutting method is characterized by comprising the following steps:
A. adhering the wafer to the blue film;
B. selecting a cutting blade;
C. and sequentially carrying out annular cutting on the to-be-cut area on the edge of the wafer for multiple times, wherein the adjacent annular cutting areas for two times have coincidence quantity in the radial direction of the wafer.
2. The wafer ring-shaped dicing method according to claim 1, wherein the width of the dicing blade is 0.7 to 0.9 mm.
3. The wafer ring-shaped cutting method according to claim 2, wherein the number of the ring-shaped cuts is three, and each cut is 0.6 mm.
4. The method for cutting a wafer ring according to any one of claims 1 to 3, wherein the weight is 0.2 mm.
5. The wafer ring shape dicing method according to any one of claims 1 to 3, wherein the thickness of the blue film is 75 μm.
6. The wafer ring dicing method according to claim 5, wherein the cutting blade cuts into the blue film to a depth of 20 μm in the ring dicing.
7. The wafer ring cutting method according to any one of claims 1 to 3, wherein a cutting snap ring is provided at an edge of the blue film in the ring cutting.
8. The wafer ring-shaped cutting method according to claim 7, wherein the cutting snap ring has a thickness of 1.2 to 1.5 mm.
9. The wafer ring-shaped cutting method according to claim 8, wherein the cutting snap ring has a size of 6 inches, 8 inches, or 12 inches.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911397470.5A CN111070448A (en) | 2019-12-30 | 2019-12-30 | Wafer ring cutting method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911397470.5A CN111070448A (en) | 2019-12-30 | 2019-12-30 | Wafer ring cutting method |
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| CN111070448A true CN111070448A (en) | 2020-04-28 |
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| CN201911397470.5A Pending CN111070448A (en) | 2019-12-30 | 2019-12-30 | Wafer ring cutting method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112435987A (en) * | 2020-11-09 | 2021-03-02 | 太极半导体（苏州）有限公司 | Groove type positioning method for 3D wafer |
| CN113380702A (en) * | 2021-06-10 | 2021-09-10 | 广州安晟半导体技术有限公司 | Cutting method and control system of indium phosphide wafer |
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| CN113380702A (en) * | 2021-06-10 | 2021-09-10 | 广州安晟半导体技术有限公司 | Cutting method and control system of indium phosphide wafer |
| CN113380702B (en) * | 2021-06-10 | 2023-05-09 | 东莞安晟半导体技术有限公司 | Cutting method and control system for indium phosphide wafer |
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Application publication date: 20200428 |