CN110007555B - 图案描绘方法、光掩模及其制造方法、显示装置的制造方法 - Google Patents
图案描绘方法、光掩模及其制造方法、显示装置的制造方法 Download PDFInfo
- Publication number
- CN110007555B CN110007555B CN201811530914.3A CN201811530914A CN110007555B CN 110007555 B CN110007555 B CN 110007555B CN 201811530914 A CN201811530914 A CN 201811530914A CN 110007555 B CN110007555 B CN 110007555B
- Authority
- CN
- China
- Prior art keywords
- pattern
- photomask
- hole
- correction
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017241926 | 2017-12-18 | ||
JP2017-241926 | 2017-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110007555A CN110007555A (zh) | 2019-07-12 |
CN110007555B true CN110007555B (zh) | 2022-07-08 |
Family
ID=67104956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811530914.3A Active CN110007555B (zh) | 2017-12-18 | 2018-12-14 | 图案描绘方法、光掩模及其制造方法、显示装置的制造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7126925B2 (ja) |
KR (1) | KR102229514B1 (ja) |
CN (1) | CN110007555B (ja) |
TW (1) | TWI710848B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220090668A (ko) | 2020-12-22 | 2022-06-30 | 삼성디스플레이 주식회사 | 임계선폭 오차 관리방법 및 이를 이용한 포토마스크 제조방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08254812A (ja) * | 1995-03-16 | 1996-10-01 | Fujitsu Ltd | 位相シフトマスク、パターン形成方法及び半導体装置の製造方法 |
JP2003107665A (ja) * | 2001-09-19 | 2003-04-09 | Samsung Electronics Co Ltd | フォトマスク製造時に現像段階で生じる線幅変化を補正して露光する方法及びそのためのプログラムを記録したコンピュータ読み取り可能な記録媒体 |
CN1570760A (zh) * | 2003-07-15 | 2005-01-26 | 南亚科技股份有限公司 | 接触孔洞光学邻近效应修正和掩模及半导体装置制造方法 |
JP2006039488A (ja) * | 2004-07-30 | 2006-02-09 | Dainippon Printing Co Ltd | マスクパターンデータ補正方法 |
KR20110121462A (ko) * | 2010-04-30 | 2011-11-07 | 주식회사 하이닉스반도체 | 컨택홀 패턴의 임계치수(cd) 보정방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100393227B1 (ko) * | 2001-07-21 | 2003-07-31 | 삼성전자주식회사 | 전자빔 리소그래피시 선폭변화를 보정하여 노광하는 방법및 이를 기록한 기록매체 |
JP2006235515A (ja) | 2005-02-28 | 2006-09-07 | Sharp Corp | フォトマスクおよび表示パネルの製造方法 |
US7617475B2 (en) | 2006-11-13 | 2009-11-10 | United Microelectronics Corp. | Method of manufacturing photomask and method of repairing optical proximity correction |
JP4607139B2 (ja) * | 2007-03-19 | 2011-01-05 | 株式会社リコー | 追記型情報記録媒体及びマスター基板 |
KR101161919B1 (ko) * | 2008-03-28 | 2012-07-20 | 호야 가부시키가이샤 | 다계조 포토마스크 및 그 제조 방법과 패턴 전사 방법 |
US8736084B2 (en) * | 2011-12-08 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for E-beam in-chip overlay mark |
KR101555015B1 (ko) * | 2012-12-28 | 2015-09-22 | 주식회사 잉크테크 | 전도성 패턴의 형성방법 |
TWI575308B (zh) * | 2013-05-03 | 2017-03-21 | 聯華電子股份有限公司 | 修正輔助圖案的方法 |
JP6324044B2 (ja) * | 2013-12-03 | 2018-05-16 | キヤノン株式会社 | セルのパターンの作成方法、マスクパターンの作成方法、プログラム、情報処理装置、マスク製造方法 |
JP6189242B2 (ja) * | 2014-03-28 | 2017-08-30 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及び表示装置の製造方法 |
-
2018
- 2018-11-08 JP JP2018210876A patent/JP7126925B2/ja active Active
- 2018-12-06 TW TW107143816A patent/TWI710848B/zh active
- 2018-12-11 KR KR1020180159050A patent/KR102229514B1/ko active Active
- 2018-12-14 CN CN201811530914.3A patent/CN110007555B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08254812A (ja) * | 1995-03-16 | 1996-10-01 | Fujitsu Ltd | 位相シフトマスク、パターン形成方法及び半導体装置の製造方法 |
JP2003107665A (ja) * | 2001-09-19 | 2003-04-09 | Samsung Electronics Co Ltd | フォトマスク製造時に現像段階で生じる線幅変化を補正して露光する方法及びそのためのプログラムを記録したコンピュータ読み取り可能な記録媒体 |
CN1570760A (zh) * | 2003-07-15 | 2005-01-26 | 南亚科技股份有限公司 | 接触孔洞光学邻近效应修正和掩模及半导体装置制造方法 |
JP2006039488A (ja) * | 2004-07-30 | 2006-02-09 | Dainippon Printing Co Ltd | マスクパターンデータ補正方法 |
KR20110121462A (ko) * | 2010-04-30 | 2011-11-07 | 주식회사 하이닉스반도체 | 컨택홀 패턴의 임계치수(cd) 보정방법 |
Also Published As
Publication number | Publication date |
---|---|
JP7126925B2 (ja) | 2022-08-29 |
KR20190073276A (ko) | 2019-06-26 |
JP2019109499A (ja) | 2019-07-04 |
KR102229514B1 (ko) | 2021-03-17 |
TWI710848B (zh) | 2020-11-21 |
CN110007555A (zh) | 2019-07-12 |
TW201928508A (zh) | 2019-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8440376B2 (en) | Exposure determining method, method of manufacturing semiconductor device, and computer program product | |
US7904851B2 (en) | Photomask manufacturing method and semiconductor device manufacturing method | |
US7732109B2 (en) | Method and system for improving critical dimension uniformity | |
US9005882B2 (en) | Reticle defect correction by second exposure | |
KR101295479B1 (ko) | 다계조 포토마스크의 제조 방법 및 패턴 전사 방법 | |
TWI731641B (zh) | 微影製程之子場控制及相關聯裝置 | |
US8669022B2 (en) | Photomask | |
CN110007555B (zh) | 图案描绘方法、光掩模及其制造方法、显示装置的制造方法 | |
TW201732977A (zh) | 焦距監測方法 | |
CN107643651B (zh) | 一种光刻辅助图形的设计方法 | |
CN109725487B (zh) | 图案描绘方法、光掩模和显示装置用器件的制造方法 | |
EP4060409A1 (en) | Novel interface definition for lithographic apparatus | |
JP2001223155A (ja) | フォトリソグラフィ方法 | |
WO2022179739A1 (en) | Novel interface definition for lithographic apparatus | |
CN119376175A (zh) | 版图的修正方法、装置、介质、设备及程序产品 | |
CN112180678A (zh) | 一种光罩工艺误差修正方法 | |
JP2011257614A (ja) | フォトマスク、フォトマスクの再加工方法、及びレジストパターンの形成方法 | |
JP2010123767A (ja) | 露光装置、露光方法及びプログラム | |
JP2004272137A (ja) | マスク及びパターン形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |