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CN110007555B - 图案描绘方法、光掩模及其制造方法、显示装置的制造方法 - Google Patents

图案描绘方法、光掩模及其制造方法、显示装置的制造方法 Download PDF

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Publication number
CN110007555B
CN110007555B CN201811530914.3A CN201811530914A CN110007555B CN 110007555 B CN110007555 B CN 110007555B CN 201811530914 A CN201811530914 A CN 201811530914A CN 110007555 B CN110007555 B CN 110007555B
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China
Prior art keywords
pattern
photomask
hole
correction
transfer
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CN201811530914.3A
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Chinese (zh)
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CN110007555A (zh
Inventor
金谷健一
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Hoya Corp
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Hoya Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76Patterning of masks by imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76Patterning of masks by imaging
    • G03F1/78Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201811530914.3A 2017-12-18 2018-12-14 图案描绘方法、光掩模及其制造方法、显示装置的制造方法 Active CN110007555B (zh)

Applications Claiming Priority (2)

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JP2017241926 2017-12-18
JP2017-241926 2017-12-18

Publications (2)

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CN110007555A CN110007555A (zh) 2019-07-12
CN110007555B true CN110007555B (zh) 2022-07-08

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CN201811530914.3A Active CN110007555B (zh) 2017-12-18 2018-12-14 图案描绘方法、光掩模及其制造方法、显示装置的制造方法

Country Status (4)

Country Link
JP (1) JP7126925B2 (ja)
KR (1) KR102229514B1 (ja)
CN (1) CN110007555B (ja)
TW (1) TWI710848B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220090668A (ko) 2020-12-22 2022-06-30 삼성디스플레이 주식회사 임계선폭 오차 관리방법 및 이를 이용한 포토마스크 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08254812A (ja) * 1995-03-16 1996-10-01 Fujitsu Ltd 位相シフトマスク、パターン形成方法及び半導体装置の製造方法
JP2003107665A (ja) * 2001-09-19 2003-04-09 Samsung Electronics Co Ltd フォトマスク製造時に現像段階で生じる線幅変化を補正して露光する方法及びそのためのプログラムを記録したコンピュータ読み取り可能な記録媒体
CN1570760A (zh) * 2003-07-15 2005-01-26 南亚科技股份有限公司 接触孔洞光学邻近效应修正和掩模及半导体装置制造方法
JP2006039488A (ja) * 2004-07-30 2006-02-09 Dainippon Printing Co Ltd マスクパターンデータ補正方法
KR20110121462A (ko) * 2010-04-30 2011-11-07 주식회사 하이닉스반도체 컨택홀 패턴의 임계치수(cd) 보정방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100393227B1 (ko) * 2001-07-21 2003-07-31 삼성전자주식회사 전자빔 리소그래피시 선폭변화를 보정하여 노광하는 방법및 이를 기록한 기록매체
JP2006235515A (ja) 2005-02-28 2006-09-07 Sharp Corp フォトマスクおよび表示パネルの製造方法
US7617475B2 (en) 2006-11-13 2009-11-10 United Microelectronics Corp. Method of manufacturing photomask and method of repairing optical proximity correction
JP4607139B2 (ja) * 2007-03-19 2011-01-05 株式会社リコー 追記型情報記録媒体及びマスター基板
KR101161919B1 (ko) * 2008-03-28 2012-07-20 호야 가부시키가이샤 다계조 포토마스크 및 그 제조 방법과 패턴 전사 방법
US8736084B2 (en) * 2011-12-08 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for E-beam in-chip overlay mark
KR101555015B1 (ko) * 2012-12-28 2015-09-22 주식회사 잉크테크 전도성 패턴의 형성방법
TWI575308B (zh) * 2013-05-03 2017-03-21 聯華電子股份有限公司 修正輔助圖案的方法
JP6324044B2 (ja) * 2013-12-03 2018-05-16 キヤノン株式会社 セルのパターンの作成方法、マスクパターンの作成方法、プログラム、情報処理装置、マスク製造方法
JP6189242B2 (ja) * 2014-03-28 2017-08-30 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08254812A (ja) * 1995-03-16 1996-10-01 Fujitsu Ltd 位相シフトマスク、パターン形成方法及び半導体装置の製造方法
JP2003107665A (ja) * 2001-09-19 2003-04-09 Samsung Electronics Co Ltd フォトマスク製造時に現像段階で生じる線幅変化を補正して露光する方法及びそのためのプログラムを記録したコンピュータ読み取り可能な記録媒体
CN1570760A (zh) * 2003-07-15 2005-01-26 南亚科技股份有限公司 接触孔洞光学邻近效应修正和掩模及半导体装置制造方法
JP2006039488A (ja) * 2004-07-30 2006-02-09 Dainippon Printing Co Ltd マスクパターンデータ補正方法
KR20110121462A (ko) * 2010-04-30 2011-11-07 주식회사 하이닉스반도체 컨택홀 패턴의 임계치수(cd) 보정방법

Also Published As

Publication number Publication date
JP7126925B2 (ja) 2022-08-29
KR20190073276A (ko) 2019-06-26
JP2019109499A (ja) 2019-07-04
KR102229514B1 (ko) 2021-03-17
TWI710848B (zh) 2020-11-21
CN110007555A (zh) 2019-07-12
TW201928508A (zh) 2019-07-16

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