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CN109643657B - Manufacturing equipment and manufacturing method of array substrate - Google Patents

Manufacturing equipment and manufacturing method of array substrate Download PDF

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CN109643657B
CN109643657B CN201780050103.0A CN201780050103A CN109643657B CN 109643657 B CN109643657 B CN 109643657B CN 201780050103 A CN201780050103 A CN 201780050103A CN 109643657 B CN109643657 B CN 109643657B
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polysilicon
photoresist
substrate
amorphous silicon
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CN109643657A (en
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徐顺龙
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Shenzhen Royole Technologies Co Ltd
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Abstract

一种阵列基板的制作设备及阵列基板的制作方法，通过将光阻涂布装置(20)及多晶硅转化装置(10)紧邻并贴靠设置，并使光阻涂布装置(20)的光阻输出口(21)与多晶硅转化装置的发射口(11)之间的距离小于基板(30)移动方向的基板(30)的长度，使得基板(30)同时经过所述多晶硅转化装置(10)及光阻涂布装置(20)，从而使得多晶硅材料层(32)与光阻材料层(34)同时形成，进而缩短基板的生产周期，降低产品的成本。

Figure 201780050103

A manufacturing equipment for an array substrate and a manufacturing method for the array substrate, by arranging a photoresist coating device (20) and a polysilicon conversion device (10) in close proximity and close to each other, and making the photoresist coating device (20) a photoresist The distance between the output port (21) and the emission port (11) of the polysilicon conversion device is smaller than the length of the substrate (30) in the moving direction of the substrate (30), so that the substrate (30) passes through the polysilicon conversion device (10) and the The photoresist coating device (20) enables the polysilicon material layer (32) and the photoresist material layer (34) to be formed at the same time, thereby shortening the production cycle of the substrate and reducing the cost of the product.

Figure 201780050103

Description

阵列基板的制作设备及阵列基板的制作方法Fabrication equipment of array substrate and fabrication method of array substrate

技术领域technical field

本发明涉及显示技术领域，尤其涉及一种阵列基板的制作设备及阵列基板的制作方法。The present invention relates to the field of display technology, and in particular, to an array substrate fabrication equipment and an array substrate fabrication method.

背景技术Background technique

在LTPS(Low Temperature Poly-silicon，低温多晶硅)显示基板制作或OLED(Organic Light-Emitting Diode，有机发光二极管)显示基板的制作过程中，需要先在基板上形成非晶硅材料层，再经由准分子镭射退火使该非晶硅材料层转化成多晶硅材料层。然后，再在所述多晶硅材料层上进行光阻涂布，之后通过曝光、显影及刻蚀等步骤将所述多晶硅材料层进行图案化。容易理解的是，制成所述LTPS显示基板或者所述OLED的显示基板的制程越多，制造单片所述LTPS显示基板或者所述OLED的显示基板的周期越长，进而会使产品的成本增加。In the production process of LTPS (Low Temperature Poly-silicon, low temperature polysilicon) display substrate or OLED (Organic Light-Emitting Diode, organic light emitting diode) display substrate, it is necessary to form an amorphous silicon material layer on the substrate first, and then pass through the standard Molecular laser annealing converts the layer of amorphous silicon material into a layer of polysilicon material. Then, photoresist coating is performed on the polysilicon material layer, and then the polysilicon material layer is patterned through the steps of exposure, development, and etching. It is easy to understand that the more manufacturing processes of the LTPS display substrate or the OLED display substrate, the longer the cycle of manufacturing a single piece of the LTPS display substrate or the OLED display substrate, which in turn will increase the cost of the product. Increase.

发明内容SUMMARY OF THE INVENTION

本发明提供一种阵列基板的制作设备及一种阵列基板的制作方法，缩短所述阵列基板的生产周期，降低产品的成本。The present invention provides an array substrate fabrication equipment and an array substrate fabrication method, which can shorten the production cycle of the array substrate and reduce the product cost.

所述阵列基板的制作设备用于将非晶硅材料层转化为多晶硅材料层及层叠于所述多晶硅材料层上的光阻材料层，其包括光阻涂布装置及位于所述光阻涂布装置一侧的多晶硅转化装置。通过所述多晶硅转化装置将非晶硅材料层转化为多晶硅材料层，通过所述光阻涂布装置形成层叠于所述多晶硅层上的光阻材料层。所述光阻涂布装置包括光阻输出口，所述多晶硅转化装置包括发射口，所述光阻输出口与所述发射口之间的距离小于所述基板在所述基板的长度。The manufacturing equipment of the array substrate is used to convert the amorphous silicon material layer into a polysilicon material layer and a photoresist material layer stacked on the polysilicon material layer, which includes a photoresist coating device and a photoresist coating device located on the photoresist coating device. Polysilicon conversion unit on one side of the unit. The amorphous silicon material layer is converted into a polysilicon material layer by the polysilicon conversion device, and a photoresist material layer stacked on the polysilicon layer is formed by the photoresist coating device. The photoresist coating device includes a photoresist output port, the polysilicon conversion device includes an emission port, and the distance between the photoresist output port and the emission port is smaller than the length of the substrate on the substrate.

所述阵列基板的制作方法包括步骤：The manufacturing method of the array substrate comprises the steps of:

提供一形成有非晶硅材料层的基板；providing a substrate formed with an amorphous silicon material layer;

将所述非晶硅材料层转化为多晶硅材料层，且在所述非晶硅材料层转化为所述多晶硅材料层的同时，在所述多晶硅材料层上形成光阻材料层；converting the amorphous silicon material layer into a polycrystalline silicon material layer, and forming a photoresist material layer on the polycrystalline silicon material layer while the amorphous silicon material layer is converted into the polycrystalline silicon material layer;

图案化所述光阻材料层形成光阻层；patterning the photoresist material layer to form a photoresist layer;

对所述多晶硅材料层进行蚀刻，得到与所述光阻层图案相同的多晶硅层；etching the polysilicon material layer to obtain a polysilicon layer with the same pattern as the photoresist layer;

剥离所述光阻层。The photoresist layer is stripped.

相对于现有技术，本发明提供的所述阵列基板的制作设备通过将光阻涂布装置及多晶硅转化装置贴靠设置，且所述所述光阻输出口与所述发射口之间的距离小于所述基板在所述基板的长度，使得在所述非晶硅材料层转化为所述多晶硅材料层的同时形成层叠于所述多晶硅材料层上的所述光阻材料层，从而缩短基板的生产周期，降低产品的成本。Compared with the prior art, the manufacturing equipment of the array substrate provided by the present invention is arranged by attaching a photoresist coating device and a polysilicon conversion device, and the distance between the photoresist output port and the emission port is is smaller than the length of the substrate on the substrate, so that the photoresist material layer stacked on the polysilicon material layer is formed while the amorphous silicon material layer is converted into the polysilicon material layer, thereby shortening the length of the substrate. Production cycle, reduce product cost.

附图说明Description of drawings

为了更清楚地说明本发明实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to illustrate the technical solutions in the embodiments of the present invention more clearly, the following briefly introduces the drawings required in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without any creative effort.

图1是本发明的阵列基板的制作设备的结构示意图；FIG. 1 is a schematic structural diagram of an array substrate manufacturing equipment of the present invention;

图2是本发明一实施例的阵列基板的制作方法的流程图；2 is a flowchart of a method for fabricating an array substrate according to an embodiment of the present invention;

图3及图5-8为本发明一实施例的阵列基板的各个制造流程中所述阵列基板的剖面图。3 and FIGS. 5-8 are cross-sectional views of the array substrate in each manufacturing process of the array substrate according to an embodiment of the present invention.

图4为图2所述阵列基板中多晶硅材料层及光阻材料层形成过程中的所述阵列基板的剖面图。FIG. 4 is a cross-sectional view of the array substrate in the process of forming a polysilicon material layer and a photoresist material layer in the array substrate of FIG. 2 .

具体实施方式Detailed ways

下面将结合本发明实施方式中的附图，对本发明实施方式中的技术方案进行清楚、完整地描述。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

请参阅图1，本发明所述阵列基板的制作设备，包括多晶硅转化装置10及光阻涂布装置20。所述多晶硅转化装置10紧邻并贴靠所述光阻涂布装置20设置。制作所述阵列基板时，先提供一基板30，并在所述基板30上形成非晶硅材料层31。将所述多晶硅转化装置10及光阻涂布装置20设于所述基板30上所述非晶硅材料层31的一侧。通过所述阵列基板的制作设备将所述非晶硅材料层31转化为多晶硅材料层32，并将所述多晶硅材料层32进行图案化得到图案化的多晶硅层33。在所述基板10上形成所述图案化的多晶硅层33后再进行后续的其它制作工序。其中，所述阵列基板制作的所述其它制作工序与现有技术相同，在此不再进行赘述。Please refer to FIG. 1 , the manufacturing equipment of the array substrate according to the present invention includes a polysilicon conversion device 10 and a photoresist coating device 20 . The polysilicon conversion device 10 is disposed adjacent to and close to the photoresist coating device 20 . When manufacturing the array substrate, a substrate 30 is provided first, and an amorphous silicon material layer 31 is formed on the substrate 30 . The polysilicon conversion device 10 and the photoresist coating device 20 are arranged on one side of the amorphous silicon material layer 31 on the substrate 30 . The amorphous silicon material layer 31 is converted into a polysilicon material layer 32 by the manufacturing equipment of the array substrate, and the polysilicon material layer 32 is patterned to obtain a patterned polysilicon layer 33 . After the patterned polysilicon layer 33 is formed on the substrate 10, other subsequent fabrication processes are performed. Wherein, the other fabrication processes for fabricating the array substrate are the same as those in the prior art, and will not be repeated here.

所述多晶硅转化装置10用于将非晶硅材料层31转化为多晶硅材料层32。本实施例中，所述多晶硅转化装置10为准分子激光退火器。所述多晶硅转化装置10通过向所述非晶硅材料层31发射激光脉冲，所述非晶硅材料层31吸收所述激光脉冲产生的能量，从而转化形成多晶硅材料层32。通过准分子激光退火的方式实现在较低的温度下实现所述非晶硅材料层31向多晶硅材料层32的转化，从而降低对基板耐高温性能的要求。可以理解的是，所述多晶硅转化装置10还可以为微波发射器，通过所述微波发射器向所述非晶硅层发射微波，实现通过微波有道晶化法促使所述非晶硅材料层31转化为多晶硅材料层32。或者，所述多晶硅转化装置10还可以为脉冲发射器，通过所述微波发射器向所述非晶硅材料层31发射脉冲，实现所述非晶硅材料层31的脉冲快速热烧结，进而实现所述非晶硅材料层31转化为所述多晶硅材料层32。本实施例中，所述多晶硅转化装置10包括发射口11，所述发射口11位于所述多晶硅转化装置10上靠近所述基板30的位置，通过所述发射口11发射激光、微波或脉冲等，从而实现将所述非晶硅材料层31转化为多晶硅材料层32。本实施例中，所述发射口11用于发射激光，且所述发射口11发射出的激光束为线性激光，线性的所述激光束从所述非晶硅层的一侧移动至所述非晶硅层的另一侧，从而完成所述非晶硅材料层31逐渐转化为所述多晶硅材料层32。The polysilicon conversion device 10 is used for converting the amorphous silicon material layer 31 into the polysilicon material layer 32 . In this embodiment, the polysilicon conversion device 10 is an excimer laser annealer. The polysilicon conversion device 10 emits a laser pulse to the amorphous silicon material layer 31 , and the amorphous silicon material layer 31 absorbs the energy generated by the laser pulse, thereby converting to form the polysilicon material layer 32 . The transformation of the amorphous silicon material layer 31 to the polysilicon material layer 32 is realized at a lower temperature by means of excimer laser annealing, thereby reducing the requirements for the high temperature resistance of the substrate. It can be understood that, the polysilicon conversion device 10 can also be a microwave transmitter, and the microwave transmitter can emit microwaves to the amorphous silicon layer, so as to promote the amorphous silicon material layer through the microwave channel crystallization method. 31 is converted into a layer 32 of polysilicon material. Alternatively, the polysilicon conversion device 10 may also be a pulse transmitter, and the microwave transmitter transmits pulses to the amorphous silicon material layer 31 to achieve pulsed rapid thermal sintering of the amorphous silicon material layer 31, thereby achieving The amorphous silicon material layer 31 is transformed into the polysilicon material layer 32 . In this embodiment, the polysilicon conversion device 10 includes an emission port 11 , and the emission port 11 is located on the polysilicon conversion device 10 near the substrate 30 , and through the emission port 11 , lasers, microwaves or pulses are emitted. , so as to realize the transformation of the amorphous silicon material layer 31 into the polysilicon material layer 32 . In this embodiment, the emission port 11 is used for emitting laser light, and the laser beam emitted by the emission port 11 is a linear laser, and the linear laser beam moves from one side of the amorphous silicon layer to the On the other side of the amorphous silicon layer, the amorphous silicon material layer 31 is gradually transformed into the polysilicon material layer 32 .

所述光阻涂布装置20位于所述多晶硅转化装置10的一侧并贴靠所述多晶硅转化装置10设置。所述光阻涂布装置20用于在所述多晶硅材料层32上进行光阻涂布，从而在所述多晶硅材料层32上形成光阻材料层34。通过具有一定镂空图案的光罩对所述光阻材料层34进行曝光显影，将所述光罩上的图案转移至所述光阻材料层34上，即得到图案化的光阻层。本实施例中，所述光阻材料层34的光阻材料为负光阻，即被光线照射到的所述光阻材料层34不溶解，没有被光线照射到的所述光阻材料层34溶解。因此，所述光阻材料层34相对所述光罩镂空图案的部分不发生变化，而相对所述光罩未镂空部分的所述光阻材料层34进行溶解，露出所述多晶硅材料层32。进一步的，对所述多晶硅材料层32进行蚀刻，露出所述图案化的光阻层的所述多晶硅材料层32被蚀刻，被所述图案化的光阻层遮挡的所述多晶硅材料层32仍然保留。蚀刻完成后，将所述图案化的光阻层进行剥离，即得图案化的所述多晶硅层33。可以理解的是，所述光阻材料还可以为正光阻，即被光线照射到的所述光阻材料层34溶解，没有被光线照射到的所述光阻材料层34不溶解，同样可以实现所述光阻材料层34的图案化。The photoresist coating device 20 is located on one side of the polysilicon conversion device 10 and is disposed adjacent to the polysilicon conversion device 10 . The photoresist coating device 20 is used for performing photoresist coating on the polysilicon material layer 32 to form a photoresist material layer 34 on the polysilicon material layer 32 . The photoresist layer 34 is exposed and developed through a photomask with a certain hollow pattern, and the pattern on the photomask is transferred to the photoresist layer 34 to obtain a patterned photoresist layer. In this embodiment, the photoresist material of the photoresist material layer 34 is negative photoresist, that is, the photoresist material layer 34 irradiated by light does not dissolve, and the photoresist material layer 34 not irradiated by light dissolve. Therefore, the portion of the photoresist material layer 34 relative to the hollow pattern of the mask does not change, but the photoresist layer 34 relative to the non-hollow portion of the mask is dissolved to expose the polysilicon material layer 32 . Further, the polysilicon material layer 32 is etched, the polysilicon material layer 32 exposing the patterned photoresist layer is etched, and the polysilicon material layer 32 blocked by the patterned photoresist layer remains reserve. After the etching is completed, the patterned photoresist layer is peeled off to obtain the patterned polysilicon layer 33 . It can be understood that the photoresist material can also be a positive photoresist, that is, the photoresist material layer 34 irradiated by the light dissolves, and the photoresist material layer 34 not irradiated by the light does not dissolve, and the same can be achieved. The patterning of the photoresist layer 34 .

本实施例中，所述光阻涂布装置20为狭缝式的光阻涂布机。所述光阻涂布装置20包括光阻输出口21，通过所述光阻输出口21向所述多晶硅层33上涂布光阻形成所述光阻材料层34。并且，通过控制所述光阻输出口21的开口大小，可以控制所述光阻材料层34的厚度。进一步的，所述光阻涂布装置20还包括一刮板22，所述刮板22位于所述光阻涂布装置30上背离所述多晶硅转化装置10的一侧。并且，所述刮板22与所述非晶硅层32之间的距离与所述光阻材料层34的厚度相同。在所述光阻输出口21在所述非晶硅层32上输出光阻材料后，通过所述刮板22将所述光阻材料进行刮涂，从而将所述光阻材料层34均匀的涂覆与所述非晶硅材料层31上。进一步的，通过调整所述刮板22与所述非晶硅材料层31之间的距离可以改变所述光阻材料层34的厚度。In this embodiment, the photoresist coating device 20 is a slit-type photoresist coating machine. The photoresist coating device 20 includes a photoresist output port 21 , and the photoresist material layer 34 is formed by coating photoresist on the polysilicon layer 33 through the photoresist output port 21 . Moreover, by controlling the opening size of the photoresist output port 21 , the thickness of the photoresist material layer 34 can be controlled. Further, the photoresist coating device 20 further includes a scraper 22 , and the scraper 22 is located on the side of the photoresist coating device 30 away from the polysilicon conversion device 10 . Moreover, the distance between the scraper 22 and the amorphous silicon layer 32 is the same as the thickness of the photoresist material layer 34 . After the photoresist output port 21 outputs the photoresist material on the amorphous silicon layer 32, the photoresist material is scraped by the scraper 22, so that the photoresist material layer 34 is uniformly coated. Coated with the amorphous silicon material layer 31 . Further, the thickness of the photoresist material layer 34 can be changed by adjusting the distance between the scraper 22 and the amorphous silicon material layer 31 .

本发明中，在所述阵列基板的制作时，形成有所述非晶硅材料层31的所述基板30相对所述多晶硅转化装置10及光阻涂布装置20进行移动，所述多晶硅转化装置10在所述基板10上形成多晶硅材料层32，所述光阻涂布装置20在形成的所述多晶硅材料层32上形成所述光阻材料层34。进一步的，本发明中，在所述基板30的移动方向上，所述多晶硅转化装置10位于所述光阻涂布装置20的前方，即所述基板30先经过所述多晶硅转化装置10再经过所述光阻涂布装置20。并且，所述多晶硅转化装置10的发射口11与所述光阻涂布装置20的光阻输出口21之间的距离小于所述基板30移动方向的所述基板的长度。本实施例中，所述基板30通过一传输机构进行传输，以实现相对所述多晶硅转化装置10及光阻涂布装置20的移动。可以理解的是，还可以将所述多晶硅转化装置10及光阻涂布装置20设于以移动机构上，当所述基板30传输至一固定位置后，移动所述多晶硅转化装置10及光阻涂布装置20，从而在所述基板30上形成多晶硅材料层32及光阻材料层34。In the present invention, during the fabrication of the array substrate, the substrate 30 on which the amorphous silicon material layer 31 is formed is moved relative to the polysilicon conversion device 10 and the photoresist coating device 20. The polysilicon conversion device 10. A polysilicon material layer 32 is formed on the substrate 10, and the photoresist coating device 20 forms the photoresist material layer 34 on the formed polysilicon material layer 32. Further, in the present invention, in the moving direction of the substrate 30, the polysilicon conversion device 10 is located in front of the photoresist coating device 20, that is, the substrate 30 first passes through the polysilicon conversion device 10 and then passes through the polysilicon conversion device 10. The photoresist coating device 20 . Moreover, the distance between the emission port 11 of the polysilicon conversion device 10 and the photoresist output port 21 of the photoresist coating device 20 is smaller than the length of the substrate in the moving direction of the substrate 30 . In this embodiment, the substrate 30 is transported by a transport mechanism to achieve movement relative to the polysilicon conversion device 10 and the photoresist coating device 20 . It can be understood that, the polysilicon conversion device 10 and the photoresist coating device 20 can also be arranged on a moving mechanism, and after the substrate 30 is transferred to a fixed position, the polysilicon conversion device 10 and the photoresist can be moved. The coating device 20 is applied to form a polysilicon material layer 32 and a photoresist material layer 34 on the substrate 30 .

本实施例中，所述基板30的一端移动至所述多晶硅转化装置10时，所述多晶硅转化装置10的所述发射口11发射的线性的激光束将所述非晶硅材料层31转化为多晶硅材料层32，并随着所述基板30相对所述多晶硅转化装置10的移动，所述多晶硅材料层32从所述基板30的该端至另一端逐渐形成；当所述基板30的该端经过所述光阻涂布装置20时，所述光阻涂布装置20在转化形成的所述多晶硅材料层32上进行光阻涂布以形成所述光阻材料层34。由于所述多晶硅转化装置10的发射口11与所述光阻涂布装置20的光阻输出口21之间的距离小于所述基板30移动方向的所述基板的长度，所述基板30同时经过所述多晶硅转化装置10及光阻涂布装置20，从而使得所述多晶硅材料层32与所述光阻材料层34同时形成。相比于现有技术中将所述基板30先经过所述多晶硅转化装置10形成多晶硅材料层32，再将形成有所述多晶硅材料层32的所述基板30移动至所述光阻涂布装置20形成光阻层的方案来说。本实施例中，在形成所述多晶硅材料层32的同时形成所述光阻材料层34，可以缩短基板的生产周期，降低产品的成本。In this embodiment, when one end of the substrate 30 moves to the polysilicon conversion device 10 , the linear laser beam emitted by the emission port 11 of the polysilicon conversion device 10 converts the amorphous silicon material layer 31 into The polysilicon material layer 32 is gradually formed from the end of the substrate 30 to the other end with the movement of the substrate 30 relative to the polysilicon conversion device 10 ; when the end of the substrate 30 is When passing through the photoresist coating device 20 , the photoresist coating device 20 performs photoresist coating on the converted polysilicon material layer 32 to form the photoresist material layer 34 . Since the distance between the emission port 11 of the polysilicon conversion device 10 and the photoresist output port 21 of the photoresist coating device 20 is smaller than the length of the substrate in the moving direction of the substrate 30, the substrate 30 passes through the The polysilicon conversion device 10 and the photoresist coating device 20 are used to form the polysilicon material layer 32 and the photoresist material layer 34 at the same time. Compared with the prior art, the substrate 30 is first passed through the polysilicon conversion device 10 to form a polysilicon material layer 32 , and then the substrate 30 on which the polysilicon material layer 32 is formed is moved to the photoresist coating device 20 for the scheme of forming the photoresist layer. In this embodiment, the photoresist material layer 34 is formed at the same time as the polysilicon material layer 32 is formed, which can shorten the production cycle of the substrate and reduce the cost of the product.

请参阅图2，本发明还提供一种阵列基板的制作方法，包括在基板30上形成图案化的多晶硅层33。在所述基板30上形成所述图案化的多晶硅层33的步骤包括：Referring to FIG. 2 , the present invention further provides a method for fabricating an array substrate, including forming a patterned polysilicon layer 33 on the substrate 30 . The step of forming the patterned polysilicon layer 33 on the substrate 30 includes:

201、提供一形成有非晶硅材料层31的基板30。201. Provide a substrate 30 on which an amorphous silicon material layer 31 is formed.

请参阅图3，提供一所述基板30，通过溅镀、低压化学气相沉积等方式在所述基板30上形成所述非晶硅材料层31，即得到所述形成有非晶硅材料层31的基板30。Referring to FIG. 3 , a substrate 30 is provided, and the amorphous silicon material layer 31 is formed on the substrate 30 by sputtering, low pressure chemical vapor deposition, etc., to obtain the amorphous silicon material layer 31 formed thereon. the substrate 30.

202、请参阅图4-5，将所述非晶硅材料层31转化为多晶硅材料层33，且在所述非晶硅材料层31转化为所述多晶硅材料层33的同时，在所述多晶硅材料层33上形成光阻材料层34。202. Referring to FIGS. 4-5, the amorphous silicon material layer 31 is converted into a polysilicon material layer 33, and when the amorphous silicon material layer 31 is converted into the polysilicon material layer 33, the polysilicon A photoresist material layer 34 is formed on the material layer 33 .

通过多晶硅转化装置10处理所述非晶硅材料层31，使所述非晶硅材料层31转化为所述多晶硅材料层33，并通过光阻涂布装置20涂布形成所述光阻材料层34。本实施例中，所述基板30相对所述多晶硅转化装置10及所述光阻涂布装置20进行移动，所述基板30的一端依次经过所述多晶硅转化装置10及所述光阻涂布装置20，以在所述基板30上形成所述多晶硅材料层32及所述光阻材料层34。本发明中，所述光阻涂布装置20与所述多晶硅转化装置10贴靠在一起。所述光阻涂布装置20包括光阻输出口21，所述多晶硅转化装置10包括发射口11，所述光阻输出口21与所述发射口10之间的距离小于所述基板30移动方向的所述基板30的长度。即所述基板30经过所述光阻涂布装置20时，所述基板30同时位于所述所述多晶硅转化装置10及光阻涂布装置20的一侧，使得所述所述多晶硅转化装置10将所述非晶硅材料层31转化为多晶硅材料层32的同时，所述光阻涂布设备20在所述多晶硅材料层32上形成光阻材料层34。相比于现有技术中将所述基板30先经过所述多晶硅转化装置10形成多晶硅材料层32，再将形成有所述多晶硅材料层32的所述基板30移动至所述光阻涂布装置20形成光阻层的方案来说。本实施例中，在形成所述多晶硅材料层32的同时形成所述光阻材料层34，可以缩短基板的生产周期，降低产品的成本。The amorphous silicon material layer 31 is processed by the polysilicon conversion device 10 to convert the amorphous silicon material layer 31 into the polysilicon material layer 33 , and the photoresist material layer is formed by coating the photoresist coating device 20 34. In this embodiment, the substrate 30 moves relative to the polysilicon conversion device 10 and the photoresist coating device 20 , and one end of the substrate 30 passes through the polysilicon conversion device 10 and the photoresist coating device in sequence. 20 , to form the polysilicon material layer 32 and the photoresist material layer 34 on the substrate 30 . In the present invention, the photoresist coating device 20 and the polysilicon conversion device 10 are abutted together. The photoresist coating device 20 includes a photoresist output port 21 , the polysilicon conversion device 10 includes an emission port 11 , and the distance between the photoresist output port 21 and the emission port 10 is smaller than the moving direction of the substrate 30 . the length of the substrate 30. That is, when the substrate 30 passes through the photoresist coating device 20 , the substrate 30 is located on one side of the polysilicon conversion device 10 and the photoresist coating device 20 at the same time, so that the polysilicon conversion device 10 While converting the amorphous silicon material layer 31 into the polysilicon material layer 32 , the photoresist coating apparatus 20 forms a photoresist material layer 34 on the polysilicon material layer 32 . Compared with the prior art, the substrate 30 is first passed through the polysilicon conversion device 10 to form a polysilicon material layer 32 , and then the substrate 30 on which the polysilicon material layer 32 is formed is moved to the photoresist coating device 20 for the scheme of forming the photoresist layer. In this embodiment, the photoresist material layer 34 is formed at the same time as the polysilicon material layer 32 is formed, which can shorten the production cycle of the substrate and reduce the cost of the product.

本实施例中，所述多晶硅转化装置20为准分子激光退火器。通过所述多晶硅转化装置20实现以准分子激光退火技术对所述非晶硅材料层31进行准分子激光退火，使所述非晶硅材料层31转化为所述多晶硅材料层32。In this embodiment, the polysilicon conversion device 20 is an excimer laser annealer. Excimer laser annealing is performed on the amorphous silicon material layer 31 by using the excimer laser annealing technology through the polysilicon conversion device 20 , so that the amorphous silicon material layer 31 is converted into the polysilicon material layer 32 .

203、请参阅图6，图案化所述光阻材料层34形成光阻层35。203 . Referring to FIG. 6 , pattern the photoresist material layer 34 to form a photoresist layer 35 .

通过曝光、显影等步骤对所述光阻材料层34进行图案化，得到光阻层35。对所述光阻材料层34进行图案化的曝光、显影等步骤的具体过程在上述阵列基板的制作设备中已经进行了描述，此处不再进行赘述。The photoresist material layer 34 is patterned by steps such as exposure and development to obtain a photoresist layer 35 . The specific process of patterning the photoresist material layer 34 such as exposure, development and other steps has been described in the above-mentioned manufacturing equipment of the array substrate, and will not be repeated here.

204、请参阅图7，对所述多晶硅材料层32进行蚀刻，得到与所述光阻层35图案相同的所述图案化的多晶硅层33。204 . Referring to FIG. 7 , the polysilicon material layer 32 is etched to obtain the patterned polysilicon layer 33 having the same pattern as the photoresist layer 35 .

本实施例中，通过湿法蚀刻对所述多晶硅材料层32进行蚀刻，其具体过程现有技术已经进行了揭示，此处不再进行赘述。In this embodiment, the polysilicon material layer 32 is etched by wet etching, the specific process of which has been disclosed in the prior art, and will not be repeated here.

205、请参阅图8，剥离所述光阻层35。205. Referring to FIG. 8, peel off the photoresist layer 35.

进一步的，在上述步骤中形成所述多晶硅层33并剥离所述光阻层35后，还需要在所述多晶硅层33进行上依次形成第一绝缘层、栅极、第二绝缘层、源漏极、公共电极等，其具体形成方式与现有技术相同，此处不再进行赘述。Further, after forming the polysilicon layer 33 and peeling off the photoresist layer 35 in the above steps, it is also necessary to form a first insulating layer, a gate, a second insulating layer, a source/drain layer on the polysilicon layer 33 in sequence. The specific formation method of the electrode, the common electrode, etc. is the same as that in the prior art, and will not be repeated here.

本发明中，通过将所述光阻涂布装置20及多晶硅转化装置10紧邻并贴靠设置，使得所述光阻输出口21与所述发射口11之间的距离小于所述基板30移动方向的所述基板30的长度，所述基板30同时经过所述多晶硅转化装置10及光阻涂布装置20，从而使得所述多晶硅材料层32与所述光阻材料层34同时形成。相比于现有技术中将所述基板30先经过所述多晶硅转化装置10形成多晶硅材料层32，再将形成有所述多晶硅材料层32的所述基板30移动至所述光阻涂布装置20形成光阻材料层的方案来说，本发明在形成所述多晶硅材料层32的同时形成所述光阻材料层34，可以缩短基板的生产周期，降低产品的成本。In the present invention, by arranging the photoresist coating device 20 and the polysilicon conversion device 10 in close proximity and close to each other, the distance between the photoresist output port 21 and the emission port 11 is smaller than the moving direction of the substrate 30 According to the length of the substrate 30 , the substrate 30 passes through the polysilicon conversion device 10 and the photoresist coating device 20 at the same time, so that the polysilicon material layer 32 and the photoresist material layer 34 are formed simultaneously. Compared with the prior art, the substrate 30 is first passed through the polysilicon conversion device 10 to form a polysilicon material layer 32 , and then the substrate 30 on which the polysilicon material layer 32 is formed is moved to the photoresist coating device 20 For the solution of forming the photoresist material layer, the present invention forms the photoresist material layer 34 at the same time as the polysilicon material layer 32 is formed, which can shorten the production cycle of the substrate and reduce the cost of the product.

以上所述是本发明的优选实施例，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。The above are the preferred embodiments of the present invention. It should be pointed out that for those skilled in the art, without departing from the principles of the present invention, several improvements and modifications can be made, and these improvements and modifications may also be regarded as It is the protection scope of the present invention.

Claims (9)

1.一种阵列基板的制作设备，用于将非晶硅材料层转化为多晶硅材料层及在所述多晶硅材料层上形成光阻材料层，其特征在于，包括光阻涂布装置及贴靠于所述光阻涂布装置一侧的多晶硅转化装置；所述多晶硅转化装置将非晶硅材料层转化为多晶硅材料层，所述光阻涂布装置形成层叠于所述多晶硅材料层上的光阻材料层；所述光阻涂布装置包括光阻输出口，所述多晶硅转化装置包括发射口，所述光阻输出口与所述发射口之间的距离小于所述基板移动方向的所述基板的长度；所述非晶硅材料层及所述光阻材料层依次形成于一基板上，所述基板相对所述多晶硅转化装置及所述光阻涂布装置沿一个方向进行移动，所述多晶硅转化装置及所述光阻涂布装置位于所述基板的移动方向上；且在所述基板的移动方向上，所述多晶硅转化装置位于所述光阻涂布装置前方。1. a manufacturing equipment of an array substrate, for converting an amorphous silicon material layer into a polysilicon material layer and forming a photoresist material layer on the polysilicon material layer, it is characterized in that, comprising a photoresist coating device and a A polysilicon conversion device on one side of the photoresist coating device; the polysilicon conversion device converts the amorphous silicon material layer into a polysilicon material layer, and the photoresist coating device forms a photoresist layer stacked on the polysilicon material layer. a resist material layer; the photoresist coating device includes a photoresist output port, the polysilicon conversion device includes an emission port, and the distance between the photoresist output port and the emission port is smaller than the distance between the photoresist output port and the emission port in the moving direction of the substrate The length of the substrate; the amorphous silicon material layer and the photoresist material layer are sequentially formed on a substrate, and the substrate moves relative to the polysilicon conversion device and the photoresist coating device in one direction, the The polysilicon conversion device and the photoresist coating device are located in the moving direction of the substrate; and in the moving direction of the substrate, the polysilicon conversion device is located in front of the photoresist coating device. 2.如权利要求1所述的阵列基板的制作设备，其特征在于，所述多晶硅转化装置为准分子激光退火器。2 . The manufacturing equipment of the array substrate according to claim 1 , wherein the polysilicon conversion device is an excimer laser annealer. 3 . 3.如权利要求1所述的阵列基板的制作设备，其特征在于，所述光阻涂布装置包括一刮板，所述刮板位于所述光阻涂布装置上背离所述多晶硅转化装置的一侧，且所述刮板与所述非晶硅材料层之间的距离与所述光阻材料层的厚度相同。3 . The manufacturing apparatus of an array substrate according to claim 1 , wherein the photoresist coating device comprises a blade, and the blade is located on the photoresist coating device and away from the polysilicon conversion device. 4 . side, and the distance between the scraper and the amorphous silicon material layer is the same as the thickness of the photoresist material layer. 4.一种阵列基板的制作方法，其特征在于，包括步骤：4. A method for fabricating an array substrate, comprising the steps of: 提供一形成有非晶硅材料层的基板；providing a substrate formed with an amorphous silicon material layer; 将所述非晶硅材料层转化为多晶硅材料层，且在所述非晶硅材料层转化为所述多晶硅材料层的同时，在所述多晶硅材料层上形成光阻材料层；converting the amorphous silicon material layer into a polycrystalline silicon material layer, and forming a photoresist material layer on the polycrystalline silicon material layer while the amorphous silicon material layer is converted into the polycrystalline silicon material layer; 图案化所述光阻材料层形成光阻层；patterning the photoresist material layer to form a photoresist layer; 对所述多晶硅材料层进行蚀刻，得到与所述光阻层图案相同的多晶硅层；etching the polysilicon material layer to obtain a polysilicon layer with the same pattern as the photoresist layer; 剥离所述光阻层。The photoresist layer is stripped. 5.如权利要求4所述的阵列基板的制作方法，其特征在于，所述“将所述非晶硅材料层转化为多晶硅材料层”的步骤中，采用多晶硅转化装置处理所述非晶硅材料层，从而将所述非晶硅材料层转化为多晶硅材料层。5 . The manufacturing method of an array substrate according to claim 4 , wherein, in the step of “converting the amorphous silicon material layer into a polysilicon material layer”, a polysilicon conversion device is used to process the amorphous silicon. 6 . material layer, thereby converting the amorphous silicon material layer into a polysilicon material layer. 6.如权利要求5所述的阵列基板的制作方法，其特征在于，所述“在所述非晶硅材料层转化为所述多晶硅材料层的同时，在多晶硅材料层上形成光阻材料层”的步骤中，采用光阻涂布装置在所述多晶硅材料层上形成所述光阻材料层。6 . The method for fabricating an array substrate according to claim 5 , wherein, in the process of “forming a photoresist material layer on the polysilicon material layer while the amorphous silicon material layer is converted into the polysilicon material layer. 7 . ”, a photoresist coating device is used to form the photoresist material layer on the polysilicon material layer. 7.如权利要求6所述的阵列基板的制作方法，其特征在于，在“将所述非晶硅材料层转化为多晶硅材料层，且在所述非晶硅材料层转化为所述多晶硅材料层的同时，在所述多晶硅材料层上形成光阻材料层”的步骤中，所述基板相对所述多晶硅转化装置及所述光阻涂布装置进行移动，所述基板的一端依次经过所述多晶硅转化装置及所述光阻涂布装置，以在所述基板上形成所述多晶硅材料层及所述光阻层。7. The method for fabricating an array substrate according to claim 6, characterized in that in "converting the amorphous silicon material layer into a polysilicon material layer, and converting the amorphous silicon material layer into the polysilicon material" In the step of forming a photoresist material layer on the polysilicon material layer at the same time, the substrate moves relative to the polysilicon conversion device and the photoresist coating device, and one end of the substrate passes through the A polysilicon conversion device and the photoresist coating device are used to form the polysilicon material layer and the photoresist layer on the substrate. 8.如权利要求7所述的阵列基板的制作方法，其特征在于，在“将所述非晶硅材料层转化为多晶硅材料层，且在所述非晶硅材料层转化为所述多晶硅材料层的同时，在所述多晶硅材料层上形成光阻材料层”的步骤中，所述光阻涂布装置与所述多晶硅转化装置贴靠在一起，所述光阻涂布装置包括光阻输出口，所述多晶硅转化装置包括发射口，所述光阻输出口与所述发射口之间的距离小于所述基板在所述基板的移动方向上的长度。8. The method for fabricating an array substrate according to claim 7, characterized in that in "converting the amorphous silicon material layer into a polysilicon material layer, and converting the amorphous silicon material layer into the polysilicon material" In the step of forming a photoresist material layer on the polysilicon material layer at the same time, the photoresist coating device is abutted with the polysilicon conversion device, and the photoresist coating device includes a photoresist output The polysilicon conversion device includes an emission port, and the distance between the photoresist output port and the emission port is smaller than the length of the substrate in the moving direction of the substrate. 9.如权利要求5所述的阵列基板的制作方法，其特征在于，通过准分子激光退火技术对所述非晶硅材料层进行准分子激光退火，使所述非晶硅材料层转化为所述多晶硅材料层。9 . The method for fabricating an array substrate according to claim 5 , wherein the amorphous silicon material layer is subjected to excimer laser annealing through an excimer laser annealing technique, so that the amorphous silicon material layer is converted into the the polysilicon material layer.
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