CN104505340A - Preparation method for low-temperature polycrystalline silicon film - Google Patents
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Abstract
The invention discloses a preparation method for a low-temperature polycrystalline silicon film, and the specific steps of the method are that: forming a buffering layer and a noncrystalline silicon layer successively on a substrate; carrying out regioselectivity doping of the noncrystalline silicon layer through the technology of element doping, and forming a periodic structure at the noncrystalline silicon layer, wherein the periodic structure is formed by the alternative arrangement of doped regions and non-doped regions; and carrying out laser crystallization of the noncrystalline silicon layer, and obtaining the low-temperature polycrystalline silicon film. When the noncrystalline silicon layer is irradiated by laser, a complete fusion region and a non-complete fusion region are formed because the doped regions and the non-doped regions are different in capability of absorbing laser energy, and there is a lateral temperature gradient between the complete fusion region and the non-complete fusion region, thereby prompting and controlling the super lateral crystallization of crystal nucleus, and increasing the crystal grain size. Through doping, the super lateral crystallization condition is established, thereby facilitating the growth of a large-size crystal grain. Meanwhile, the method can change the absorption capability of noncrystalline silicon layer, and a solid laser and other cheap lasers are employed for crystallization, thereby reducing the preparation cost.
Description
Technical field
The present invention relates to field of polysilicon technology, be specifically related to a kind of method that super transverse crystallization formed based on doping prepares low-temperature polysilicon film.
Background technology
Polysilicon (p-Si) has and flows transport factor much larger than amorphous silicon (a-Si), the high carrier mobility of the comparable endorsement crystal silicon of polysilicon (p-Si), normal replacement amorphous silicon is applied to the active layer of thin-film transistor (TFT), therefore shows application in (AMLCD) and active organic LED (AMOLED) at the active liquid crystal of integrated peripheral drive very wide.The substrate of the polysilicon membrane of flat-panel monitor is the glass being difficult to bear high-temperature technology, and under the restriction of this condition, low temperature polycrystalline silicon (LTPS) technology is industry inevitable choice.
With regard to current technology, low-temperature polysilicon silicon technology mainly contains following several: short annealing solid phase crystallization method (RTA); Quasi-molecule laser annealing crystallization method (ELA); Metal induced lateral crystallization (MILC); Heated filament catalytic chemical gaseous phase deposition (Cat-CVD) etc.Excimer laser crystallization (ELA) utilizes excimer laser to irradiate amorphous silicon on glass substrate, it is heat energy that amorphous silicon absorbs light energy conversion, amorphous silicon will from solid state transformed for molten condition when temperature reaches certain value, and can when cooling recrystallization and generate the process of polysilicon.Because amorphous silicon membrane is strong to the absorbability of ultraviolet light, and quasi-molecule laser pulse power is large, little to the infringement of substrate, the first-selected lasing light emitter that these features make excimer laser become industry to prepare low-temperature polysilicon film.But also there is the unstable and maintenance cost high-technology defect of beam uniformity difference, power in excimer laser.In order to overcome the above-mentioned shortcoming of excimer laser, people begin one's study and use long wavelength laser (such as: Nd:YAG, the neodymium doped yttrium aluminium garnet laser such as solid state laser; Nd:YVG, Nd-doped yttrium vanadate laser) prepare the method for low temperature polycrystalline silicon.Compared with excimer laser, this kind of laser has the advantages such as high and stable, the reliability and durability and maintenance cost of power output is low.But the output wavelength of these solid state lasers is generally positioned at visible light wave range or near infrared band, and the absworption peak of amorphous silicon is mainly positioned at ultraviolet light wave band.In order to alleviate this problem, general method adopts complicated frequency doubling technology and strengthens laser output power, and this can substantially increase technical difficulty and manufacturing cost undoubtedly.
In laser crystallization technology, control to generate large scale crystal grain and realizing crystal grain, in amorphous silicon layer, build Transverse Temperature Gradient (Thermal Gradient) condition, be study one of Main way at present to realize the super transverse crystallization (Super Lateral Growth) of crystal grain.Super transverse crystallization (Super Lateral Growth, SLG) refer to that amorphous silicon is under laser irradiates, and is in critical complete molten condition, under critical molten condition, there is the solid state si of trace in the amorphous silicon of molten state, and distance between them is suitable; When amorphous silicon cools, will with the solid state si grain of these trace for seed generation crystallization, and be greater than its longitudinal size from far away due to the crystal grain lateral dimension after the thin film amorphous silicon crystallization under this condition.The general principle of super transverse crystallization is the regional temperature being changed amorphous silicon film layer by various method, in different interregional formation temperature gradients, forms super transverse crystallization.
Low temperature polycrystalline silicon preparation is the core technology in AMOLED and AMLCD, and the preparation cost increasing low temperature polycrystalline silicon crystallite dimension and reduction low temperature polycrystalline silicon is the Focal point and difficult point in low-temperature polysilicon silicon technology.A kind of preparation method controlling low temperature polycrystalline silicon manufacturing cost, increase crystallite dimension of current urgent need.
Summary of the invention
The present invention provides a kind of preparation method of low-temperature polysilicon film in order to solve the problems of the technologies described above, this method solve the technical problem that low temperature polycrystalline silicon manufacturing cost is high, crystallite dimension is little.
Technical problem to be solved by this invention is achieved by the following technical programs: a kind of preparation method of low-temperature polysilicon film, it is characterized in that comprising the following steps:
Step one: adopt plasma reinforced chemical vapour deposition (PECVD) technology, substrate successively forms resilient coating and amorphous silicon layer, and resilient coating is between substrate and amorphous silicon layer;
Step 2: adopt lithography patterning process and element doping technology, chosen doping element carries out selective doping to amorphous silicon layer, forms the periodic structure that doped region is alternate with undoped region in amorphous silicon layer;
Step 3: adopt laser to carry out irradiation crystallization to the amorphous silicon layer after doping, obtain low-temperature polysilicon film;
Laser irradiation mode is scan-type or stepping.
Wherein, step 2 is specially: a, make glue spreader with photoresist, amorphous silicon layer coats photoresist, and dries; B, employing mask plate carry out mask exposure to photoresist, and develop; C, the amorphous silicon layer finishing photoetching offset plate figure to be adulterated, wash photoetching offset plate figure, and dry; Mask plate figure is strip periodic structure.
When excimer laser selected by laser, described doped chemical is rare element, this rare element is less than the absorbability of amorphous silicon to UV energy to the absorbability of UV energy, the area in undoped region is greater than doped region area, and the area ratio between doped region and undoped region can regulate according to laser exposure intensity and doping content.
When solid state laser selected by laser, described doped chemical is rare element, the absorbability of this rare element to visible ray or near infrared energy is stronger than the absorbability of amorphous silicon to visible ray or near infrared energy, the area of doped region is greater than undoped region area, and the area ratio between doped region and undoped region can regulate according to laser exposure intensity and doping content.
Preferably, the ion implantation technique that directivity is stronger is adopted to the doping way of amorphous silicon layer, and accurately controls the concentration of ion implantation element, regulate the absorption coefficient of light of doped region.
Preferably, resilient coating uses SiNx and SiO2 compound tunic, and first on substrate, plate SiNx film, and then plate SiO2 film, the thickness of resilient coating is 1500 Ethylmercurichlorendimide ~ 3000 Ethylmercurichlorendimides.
Preferably, the width of described laser illumination beam is greater than the cycle sum in doped region and undoped region.
Further preferred, described laser illumination light beam is be the rectangle light beam of 750 millimeters, wide about 0.4 millimeter through the length of wide beam, homogenizing and shaping.
Preferably, the long limit of described laser illumination light beam is parallel to substrate minor face, and illumination beam moving direction is parallel to the long limit of substrate.
Preferably, described substrate is resin substrate or alkali-free substrate or quartz base plate.
Preferred further, in order to improve coating quality, in advance substrate was cleaned before step one.
The invention provides a kind of preparation method of low-temperature polysilicon film, the method adopts lithography patterning process and element doping technology, forms Transverse Temperature Gradient, realize the super transverse crystallization of amorphous silicon in amorphous silicon layer; Effectively change peak ranges and the size of amorphous silicon layer absorption spectrum, eliminate the restriction to optical maser wavelength in low temperature polycrystalline silicon preparation, solve the wavelength restricted problem existed in the long wavelength laser crystallization technology such as existing solid state laser; Amorphous silicon layer is under the laser beam irradiation of certain power, impurity doping region forms complete melt region and non-fully melt region with undoped region because of different to laser energy absorption ability, there is Transverse Temperature Gradient in complete melt region and non-fully melt region, can effectively promote and control the super transverse crystallization of nucleus, thus realize increasing crystallite dimension and crystal boundary control.The present invention, by element doping technology, builds super transverse crystallization condition, is conducive to large-sized crystal grain of growing up; The absorbability of amorphous silicon layer can be changed simultaneously; Adopt the cheap lasers such as solid state laser to be used for crystallization, reduce low-temperature polysilicon film preparation cost.
Accompanying drawing explanation
Fig. 1 is preparation flow figure of the present invention.
Fig. 2 is the cut-away illustration before mask exposure of the present invention.
Fig. 3 is the cut-away illustration of carrying out mask exposure process of the embodiment of the present invention one.
Fig. 4 is the embodiment of the present invention one mask exposure and the cut-away illustration after developing.
Fig. 5 is the cut-away illustration of the carrying out of the embodiment of the present invention one when adulterating.
Fig. 6 be after the embodiment of the present invention one is adulterated and photoresist demoulding cleaning after cut-away illustration.
Fig. 7 is the cut-away illustration of carrying out mask exposure process of the embodiment of the present invention two.
Fig. 8 is the embodiment of the present invention two mask exposure and the cut-away illustration after developing.
Fig. 9 is the cut-away illustration of the carrying out of the embodiment of the present invention two when adulterating.
Figure 10 be after the embodiment of the present invention two is adulterated and photoresist demoulding cleaning after cut-away illustration.
Figure 11 is the schematic diagram that in the present invention, laser carries out irradiating crystallization to the amorphous silicon membrane after element doping.
Embodiment
In order to allow those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, the present invention is further elaborated.
The invention provides a kind of preparation method of low-temperature polysilicon film, it is characterized in that comprising the following steps:
Step one: adopt plasma reinforced chemical vapour deposition (PECVD) technology, substrate successively forms resilient coating and amorphous silicon layer, and resilient coating is between substrate and amorphous silicon layer;
Step 2: adopt lithography patterning process and element doping technology, chosen doping element carries out selective doping to amorphous silicon layer, forms the periodic structure that doped region is alternate with undoped region in amorphous silicon layer;
Step 3: adopt laser to carry out irradiation crystallization to the amorphous silicon layer after doping, obtain low-temperature polysilicon film.
Method step details are shown in accompanying drawing 1-10, wherein: 1 is substrate, 2 is resilient coating, 3 is amorphous silicon layer, 4 is photoresist layer, 11, the 21 uv-exposure mask plates being respectively embodiment one and embodiment two, 12, the 22 uv-exposure light beams being respectively embodiment one and embodiment two, 13, the 23 Doped ions bundles being respectively embodiment one and embodiment two, 14,24 doped regions being respectively embodiment one and embodiment two; 5 be doped region in embodiment one, be undoped region in embodiment two, 6 be undoped region in embodiment one, be doped region in embodiment two, 7 be excimer laser ultraviolet light beam in embodiment one, be solid state laser light beam in embodiment two, 8 is light beam moving direction.
Embodiment one
In the present embodiment, being used in the laser preparing low temperature polycrystalline silicon is excimer laser.
The invention provides a kind of preparation method of low-temperature polysilicon film, comprise the following steps:
Step one, adopts plasma reinforced chemical vapour deposition (PECVD) technology, first forms resilient coating 2 on substrate 1, and then forms amorphous silicon layer 3 on the buffer layer.
In this step, resilient coating plays a part to prevent the impurity on substrate from entering amorphous silicon layer and reducing amorphous silicon layer defect.Resilient coating uses SiNx and SiO2 compound tunic, and first on substrate, plate layer of sin x film, and then plate SiO2 film, the thickness of resilient coating is 1500 Ethylmercurichlorendimide ~ 3000 Ethylmercurichlorendimides.Certainly, the thickness of resilient coating also can need to be set to other numerical value according to reality preparation.
Substrate can select resin substrate, alkali-free substrate and quartz base plate, in preparation process, before execution step one, can clean substrate in advance, makes substrate keep clean, can improve coating quality.
Step 2, by lithography patterning process and element doping technology, chosen doping element carries out selective doping to amorphous silicon layer, forms the periodic structure that doped region is alternate with undoped region in amorphous silicon layer.
In this step, described doped chemical is rare element, and this rare element is more much smaller than the absorbability of amorphous silicon to UV energy to the absorbability of UV energy.The area in undoped region is much larger than doped region area, but between them, area ratio can regulate according to laser exposure intensity and doping content.
Particularly, the concrete technology step of step 2 comprises:
With reference to shown in accompanying drawing 2, make glue spreader with photoresist, amorphous silicon layer 3 is coated photoresist 4, and dries;
Shown in accompanying drawing 3, accompanying drawing 4, adopt mask plate to carry out mask exposure to photoresist, and develop;
Shown in accompanying drawing 5, accompanying drawing 6, the amorphous silicon layer finishing photoetching offset plate figure is adulterated, washes photoetching offset plate figure, and dry.
The mask plate figure selected in this step is strip periodic structure, and the figure of mask plate also can need to be designed to other figures according to reality preparation.In order to ensure doped region and undoped region interface phase to obviously, the doping way of amorphous silicon layer adopts the ion implantation technique that directivity is stronger, accurately controls the concentration of ion implanted impurity, regulates the absorption coefficient of light of doped region.
Step 3, as shown in figure 11, carries out excimer laser irradiation crystallization to the amorphous silicon layer through step one, step 2 process, obtains low-temperature polysilicon film.
In this step, because the absorbing ability of doped region is more weak than undoped region, under the threshold condition that irradiating laser power reaches certain, when undoped region is in complete molten condition, doped region is also in non-fully molten condition, be in complete molten condition region and be between non-fully molten condition region and will form Transverse Temperature Gradient in amorphous silicon, this facilitate the super transverse crystallization of crystal grain, increase crystallite dimension.Undoped region also has certain illumination and penetrates absorbability, effectively can improve the temperature of crystallization environment, extends the amorphous silicon melting time, is conducive to the growth of large scale crystal grain.For selected doped chemical, it, while reduction amorphous silicon energy absorption ability, has the effect of metal-induced crystallization, effectively can reduce crystallization temperature, increase crystallite dimension.
Laser irradiation mode is scan-type, and the radiation modality of certain laser also can need to select stepping according to reality preparation.Swash light-struck width of light beam much larger than doped region and undoped sum regional cycle.Laser illumination beam be through the length of wide beam, homogenizing and shaping be about 750 millimeters, the wide rectangle light beam being about 0.4 millimeter.The length and width of certain light beam also can need to be set to other numerical value according to reality preparation.The long limit of laser illumination beam is parallel to the shorter one side of substrate length, i.e. substrate minor face; Light beam moving direction is parallel to the long one side of substrate length, i.e. the long limit of substrate.
Embodiment two
In the present embodiment, being used in the laser preparing low temperature polycrystalline silicon is the long wavelength lasers such as solid state laser, and their output light wavelength scopes are visible light wave range or near infrared light wave band.
The invention provides a kind of preparation method of low-temperature polysilicon film, comprise the following steps:
Step one, adopts plasma reinforced chemical vapour deposition (PECVD) technology, first forms resilient coating 2 on substrate 1, and then forms amorphous silicon layer 3 on the buffer layer.
In this step, resilient coating plays a part to prevent the impurity on substrate from entering amorphous silicon layer and reducing amorphous silicon layer defect.Resilient coating uses SiNx and SiO2 compound tunic, and first on substrate, plate layer of sin x film, and then plate SiO2 film, the thickness of resilient coating is 1500 Ethylmercurichlorendimide ~ 3000 Ethylmercurichlorendimides.Certainly, the thickness of resilient coating also can need to be set to other numerical value according to reality preparation.
Substrate can select resin substrate, alkali-free substrate and quartz base plate, in preparation process, before execution step one, can clean substrate in advance, makes substrate keep clean, can improve coating quality.
Step 2, by lithography patterning process and element doping technology, chosen doping element carries out selective doping to amorphous silicon layer, forms the periodic structure that doped region is alternate with undoped region in amorphous silicon layer.
In this step, described doped chemical is rare element, and the absorbability of this rare element to visible ray or near infrared energy is more much better than than the absorbability of amorphous silicon to visible ray or near infrared energy.The area of doped region is much larger than undoped region area, but between them, area ratio can regulate according to laser exposure intensity and doping content.
Particularly, the concrete technology step of step 2 comprises:
With reference to shown in accompanying drawing 1, make glue spreader with photoresist, amorphous silicon layer 3 is coated photoresist 4, and dries;
Shown in accompanying drawing 7, accompanying drawing 8, adopt mask plate to carry out mask exposure to photoresist, and develop;
Shown in accompanying drawing 9, accompanying drawing 10, the amorphous silicon layer finishing photoetching offset plate figure is adulterated, washes photoetching offset plate figure, and dry.
The mask plate figure selected in this step is strip periodic structure, and the figure of mask plate also can need to be designed to other figures according to reality preparation.In order to ensure doped region and undoped region interface phase to obviously, the doping way of amorphous silicon layer adopts the ion implantation technique that directivity is stronger, accurately controls the concentration of ion implanted impurity, regulates the absorption coefficient of light of doped region.
Step 3, as shown in figure 11, carries out excimer laser irradiation crystallization to the amorphous silicon layer through step one, step 2 process, obtains low-temperature polysilicon film.
In this step, because the absorbing ability of doped region is stronger than undoped region, under the threshold condition that irradiating laser power reaches certain, when doped region is in complete molten condition, undoped region is also in non-fully molten condition, be in complete molten condition region and be between non-fully molten condition region and will form Transverse Temperature Gradient at amorphous silicon layer, this facilitate the super transverse crystallization of crystal grain, increase crystallite dimension.Undoped region also has certain illumination and penetrates absorbability, effectively can improve the temperature of crystallization environment, extends the amorphous silicon melting time, is conducive to the growth of large scale crystal grain.For selected doped chemical (as cobalt element), it, when improving amorphous silicon energy absorption ability, has the effect of metal-induced crystallization simultaneously, effectively can reduce crystallization temperature, increase crystallite dimension.
Laser irradiation mode is scan-type, and the radiation modality of certain laser also can need to select stepping according to reality preparation.Swash light-struck width of light beam much larger than doped region and undoped sum regional cycle.Laser illumination beam be through the length of wide beam, homogenizing and shaping be about 750 millimeters, the wide rectangle light beam being about 0.4 millimeter.The length and width of certain light beam also can need to be set to other numerical value according to reality preparation.The long limit of laser illumination beam is parallel to the shorter one side of substrate length, i.e. substrate minor face; Light beam moving direction is parallel to the long one side of substrate length, i.e. the long limit of substrate.
The invention provides a kind of preparation method of low-temperature polysilicon film, the method adopts lithography patterning process and element doping technology, forms Transverse Temperature Gradient, realize the super transverse crystallization of amorphous silicon in amorphous silicon layer; Effectively change peak ranges and the size of amorphous silicon layer absorption spectrum, eliminate the restriction to optical maser wavelength in low temperature polycrystalline silicon preparation, solve the wavelength restricted problem existed in the long wavelength laser crystallization technology such as existing solid state laser; Amorphous silicon layer is under the laser beam irradiation of certain power, impurity doping region forms complete melt region and non-fully melt region with undoped region because of different to laser energy absorption ability, there is Transverse Temperature Gradient in complete melt region and non-fully melt region, can effectively promote and control the super transverse crystallization of nucleus, thus realize increasing crystallite dimension and crystal boundary control.The present invention, by element doping technology, builds super transverse crystallization condition, is conducive to large-sized crystal grain of growing up; The absorbability of amorphous silicon layer can be changed simultaneously; Adopt the cheap lasers such as solid state laser to be used for crystallization, reduce low-temperature polysilicon film preparation cost.
It is more than the present invention's preferably implementation; it should be noted that; when not deviating from the present invention's spirit and essence thereof, those of ordinary skill in the art are when making various corresponding change according to the present invention and be out of shape the protection range that should belong to the claim appended by the present invention.
Claims (10)
1. a preparation method for low-temperature polysilicon film, is characterized in that comprising the following steps:
Step one: adopt plasma reinforced chemical vapour deposition (PECVD) technology, substrate successively forms resilient coating and amorphous silicon layer, and resilient coating is between substrate and amorphous silicon layer;
Step 2: adopt lithography patterning process and element doping technology, chosen doping element carries out selective doping to amorphous silicon layer, forms the periodic structure that doped region is alternate with undoped region in amorphous silicon layer;
Step 3: adopt laser to carry out irradiation crystallization to the amorphous silicon layer after doping, obtain low-temperature polysilicon film;
Laser irradiation mode is scan-type or stepping.
2. the preparation method of low-temperature polysilicon film according to claim 1, is characterized in that: described step 2 is specially: a, make glue spreader with photoresist, amorphous silicon layer coats photoresist, and dries; B, employing mask plate carry out mask exposure to photoresist, and develop; C, the amorphous silicon layer finishing photoetching offset plate figure to be adulterated, wash photoetching offset plate figure, and dry; Mask plate figure is strip periodic structure.
3. the preparation method of low-temperature polysilicon film according to claim 2, is characterized in that: described laser is excimer laser.
4. the preparation method of low-temperature polysilicon film according to claim 2, is characterized in that: described laser is solid state laser.
5. the preparation method of low-temperature polysilicon film according to claim 3, it is characterized in that: described doped chemical is rare element, this rare element is less than the absorbability of amorphous silicon to UV energy to the absorbability of UV energy, the area in undoped region is greater than doped region area, and the area ratio between doped region and undoped region can regulate according to laser exposure intensity and doping content.
6. the preparation method of low-temperature polysilicon film according to claim 4, it is characterized in that: described doped chemical is rare element, the absorbability of this rare element to visible ray or near infrared energy is stronger than the absorbability of amorphous silicon to visible ray or near infrared energy, the area of doped region is greater than undoped region area, and the area ratio between doped region and undoped region can regulate according to laser exposure intensity and doping content.
7. the preparation method of the low-temperature polysilicon film according to claim 5 or 6, it is characterized in that: the ion implantation technique that directivity is stronger is adopted to the doping way of amorphous silicon layer, and accurately control the concentration of ion implantation element, regulate the absorption coefficient of light of doped region.
8. the preparation method of low-temperature polysilicon film according to claim 7, is characterized in that: resilient coating uses SiNx and SiO2 compound tunic, and first on substrate, plate SiNx film, and then plate SiO2 film, the thickness of resilient coating is 1500 Ethylmercurichlorendimide ~ 3000 Ethylmercurichlorendimides.
9. the preparation method of low-temperature polysilicon film according to claim 8, it is characterized in that: the width of described laser illumination beam is greater than the cycle sum in doped region and undoped region, the long limit of laser illumination light beam is parallel to substrate minor face, and illumination beam moving direction is parallel to the long limit of substrate.
10. the preparation method of low-temperature polysilicon film according to claim 9, is characterized in that: in order to improve coating quality, cleaned in advance before step one to substrate, and described substrate is resin substrate or alkali-free substrate or quartz base plate.
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| CN105355544A (en) * | 2015-11-24 | 2016-02-24 | 信利（惠州）智能显示有限公司 | Preparation method of low temperature polysilicon thin film and thin film transistor, and thin film transistor |
| CN106206257A (en) * | 2016-08-12 | 2016-12-07 | 昆山国显光电有限公司 | The method preparing low-temperature polysilicon film and transistor |
| CN106773431A (en) * | 2017-04-01 | 2017-05-31 | 京东方科技集团股份有限公司 | Liquid crystal display device structure and preparation method thereof |
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| CN104851905A (en) * | 2015-05-14 | 2015-08-19 | 信利（惠州）智能显示有限公司 | Integrated touch-control transparent AMOLED display device and preparation method thereof |
| CN104966790A (en) * | 2015-05-14 | 2015-10-07 | 信利（惠州）智能显示有限公司 | Method for producing integrated touch control AMOLED display device |
| CN104851905B (en) * | 2015-05-14 | 2018-03-27 | 信利（惠州）智能显示有限公司 | Transparent displayer part of integrated touch-control and preparation method thereof |
| CN105355544A (en) * | 2015-11-24 | 2016-02-24 | 信利（惠州）智能显示有限公司 | Preparation method of low temperature polysilicon thin film and thin film transistor, and thin film transistor |
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| CN106847675A (en) * | 2017-04-21 | 2017-06-13 | 京东方科技集团股份有限公司 | Low-temperature polysilicon film and preparation method thereof, thin film transistor (TFT) and display panel |
| CN109643657A (en) * | 2017-06-22 | 2019-04-16 | 深圳市柔宇科技有限公司 | The production method of the making apparatus and array substrate of array substrate |
| CN109643657B (en) * | 2017-06-22 | 2022-08-16 | 深圳市柔宇科技股份有限公司 | Manufacturing equipment and manufacturing method of array substrate |
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