CN105428220B - The ring cutting process of too bulging reduction process - Google Patents
The ring cutting process of too bulging reduction process Download PDFInfo
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- CN105428220B CN105428220B CN201510977067.5A CN201510977067A CN105428220B CN 105428220 B CN105428220 B CN 105428220B CN 201510977067 A CN201510977067 A CN 201510977067A CN 105428220 B CN105428220 B CN 105428220B
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- ring
- wafer
- arm
- support ring
- cutting
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- 238000005520 cutting process Methods 0.000 title claims abstract description 37
- 238000011946 reduction process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000002390 adhesive tape Substances 0.000 claims description 7
- 238000013459 approach Methods 0.000 claims description 6
- 239000012634 fragment Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 241001050985 Disco Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of ring cutting process of too bulging reduction process, including step：Wafer rear is thinned using too bulging reduction process method；Back process is completed at the back side of wafer；Wafer is attached on dicing tape and is fixed on scribing ring；Carrying out ring cutting technique is included step by step：Cut at the outer ledge of the center section of wafer；Using Step wise approximation mode several times ring arm will will be taken to be cut between dicing tape and support ring.The present invention can reduce the fragment rate in ring cutting step.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit method of manufacturing technology, subtracts more particularly to a kind of too drum (Taiko)
The ring cutting process of thin technique.
Background technology
Taiko reduction process is a kind of ultra-thin reduction process developed by Japanese DISCO companies, and Taiko reduction process is simultaneously
It is not that the whole plane of the i.e. silicon chip of wafer is all thinned, but only the center section of wafer is thinned, the edge part of wafer
Divide and be thinned without grinding, the width without thinned marginal portion is about 2 millimeters~5 millimeters and by this without being thinned
Marginal portion forms support ring.
Typically when silicon chip is thin to a certain extent, and when area is larger, its mechanical strength is greatly reduced, using 8 inch silicon wafers as
Example, works as silicon wafer thickness<At 200 microns, silicon chip can crimp, therefore can not continue to transport, shift and process.And use
After Taiko reduction process, the center section of only silicon chip is thinned, and the device of integrated circuit is formed using the center section of silicon chip；
The mechanical strength of whole silicon chip is kept using thicker support ring, prevents silicon chip from crimping, it is right in subsequent technique to be advantageous to
Conveyance, transfer and the processing of silicon chip.
Taiko reduction process mainly includes pad pasting, is thinned, and takes off film, back process, and cutting film (Dicing tape) attaches,
The steps such as ring cutting.
Ring cutting processing step wherein is typically cut off support ring or using grinding using machine cuts or laser cutting
Method the support ring is polished.
As shown in figure 1, it is the schematic diagram of existing method middle ring cutting process process；In wafer 1 after too bulging reduction process
Edge is formed with support ring 2.Positive back process all after the completion of need to carry out ring cutting technique to take support ring 2 from the wafer 1
Under.Need that the surface of wafer 1 is attached on dicing tape such as ultraviolet irradiation adhesive tape (UV films) 3 and is fixed on before ring cutting to draw
On loop 5, and the surface of wafer 1 is then placed on absorption platform (chuck table, CK) 4, absorption platform 4 by vacuum or
The mode of electrostatic adsorbs wafer 1 in platform surface, is fixed wafer 1.Afterwards in the outer of the center section of the wafer 1
Be at lateral edges opening position shown in dotted line circle 7 carry out cutting separate the center section of the support ring 2 and the wafer 1.Will
Take ring arm 6 to be cut between the dicing tape 3 and the support ring 2, ring arm 6 is taken described in existing method using once
Property incision, incision direction is as shown in the arrow of the horizontal direction in Fig. 1.
During last ring cutting, sticky stronger, the so disposable cut process of support ring 2 at UV films and the edge of wafer 1
In need to use larger power and torque in cut process can be made uneven, it is whard to control and easily cause to continue larger torque
Folder film is occurring during taking ring and the problem of fragment.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of ring cutting process of too bulging reduction process, can reduce ring
Cut the fragment rate in step.
In order to solve the above technical problems, the ring cutting process of too bulging reduction process provided by the invention includes following step
Suddenly：
Step 1: wafer rear is thinned using too bulging reduction process method, the center section of the wafer is thinned
To the thickness of needs, the marginal portion of the wafer is not thinned and forms a support ring.
Step 2: back process is completed at the back side of the wafer after being thinned.
Step 3: being attached to the wafer for completing back process on dicing tape and being fixed on scribing ring.
Step 4: carrying out ring cutting technique, the ring cutting technique is included step by step：
Step 41, carry out cutting at the outer ledge of the center section of the wafer and make the support ring and the wafer
Center section separate.
Step 42, ring arm will be taken to be cut between the dicing tape and the support ring, it is described to take ring arm cutting
The surface of support ring described in Step wise approximation several times during entering, finally by the support ring from the dicing tape it is completely de-
From.
Further improve is that the surface for approaching the support ring in ring arm cut process every time is taken described in step 42
Distance it is equal and for it is described take the ring arm to start a cut through when apart from the support ring surface distance divided by approach number.
Further improve is to take ring arm in cut process described in points 2 times or 3 Step wise approximations described in step 42
The surface of support ring.
Further improve is to take ring arm to approach behind the surface of the support ring described in step 42 to take ring hand by described
Arm and the support ring surface fitting take ring arm to lift certain angle by described.
Further improve is that the dicing tape is that ultraviolet irradiates adhesive tape or heat sensitive adhesive tape.
Present invention Step wise approximation branch several times during ring arm will be taken to be cut between dicing tape and support ring
The surface of pushing out ring, the power in cut process and torque can be made to obtain good control, separated dicing tape and support ring
Cheng Pingwen, the fragment rate in ring cutting step can be reduced.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description：
Fig. 1 is the schematic diagram of existing method middle ring cutting process process；
Fig. 2 is present invention method flow chart；
Fig. 3 A- Fig. 3 C are the schematic diagrames of present invention method ring cutting technical process.
Embodiment
As shown in Fig. 2 it is present invention method flow chart；It is embodiment of the present invention side as shown in Fig. 3 A to Fig. 3 C
The schematic diagram of method ring cutting technical process.The ring cutting process of the too bulging reduction process of the embodiment of the present invention comprises the following steps：
Step 1: the back side of wafer 1 is thinned using too bulging reduction process method, the center section of the wafer 1 subtracts
The thin thickness to needs, the marginal portion of the wafer 1 is not thinned and forms a support ring 2.
Step 2: back process is completed at the back side of the wafer 1 after being thinned.
Step 3: being attached to the wafer 1 for completing back process on dicing tape 3 and being fixed on scribing ring 5.
Preferably, the dicing tape 3 is that ultraviolet irradiates adhesive tape or heat sensitive adhesive tape.
Wherein, the surface of wafer 1 is placed on absorption platform 4, and absorption platform 4 is by way of vacuum or electrostatic by wafer
1 adsorbs in platform surface, is fixed wafer 1.
After the front of the wafer 1 is attached on dicing tape 3 in step 3, be fixed on scribing ring 5 before, also
The step of being included in surface formation photoresist 4 of the wafer 1, the photoresist 4 is used to protect the surface of wafer 1
Shield.
Step 4: carrying out ring cutting technique, the ring cutting technique is included step by step：
Step 41, it is that opening position shown in dotted line frame 7 carries out cutting and made at the outer ledge of the center section of the wafer 1
The center section of the support ring 2 and the wafer 1 separates.
Step 42, ring arm 6 will be taken to be cut between the dicing tape 3 and the support ring 2, it is described to take ring arm 6
The surface of support ring 2 described in Step wise approximation several times in cut process, finally by the support ring 2 from the dicing tape 3
On completely disengage.
The table for approaching the support ring 2 in the cut process of ring arm 6 every time is taken in the embodiment of the present invention, described in step 42
The distance in face it is equal and for it is described take the ring arm 6 to start a cut through when apart from the surface of support ring 2 distance divided by approach number.
Described to take the distance on ring arm 6 and the surface of the support ring 2 as shown in arrow upward in Fig. 3 A, incision direction is as in Fig. 3 A
Shown in the arrow of horizontal direction to the left.Fig. 3 A are the schematic diagram of incision original state；Fig. 3 B are the schematic diagram in cut process, can
Described ring arm 6 and the distance on the surface of the support ring 2 is taken to diminish to find out；Fig. 3 C are described to take the Step wise approximation institute of ring arm 6
State the schematic diagram behind the surface of support ring 2.
Take ring arm 6 in cut process described in points 2 times or 3 Step wise approximations in the embodiment of the present invention described in step 42
The surface of support ring 2.More numbers more than 3 can be also used in other embodiments.
Take ring arm 6 to approach behind the surface of the support ring 2 described in step 42 and take ring arm 6 and the support by described
The surface of ring 2 is bonded or takes ring arm 6 to lift certain angle by described.Certain angle is wherein lifted to may be referred to shown in Fig. 3 C,
The root for taking ring arm 6 and the contact of the surface of the support ring 2, the tip for taking ring arm 6 have it is certain have a downwarp, this
Sample is more beneficial for tearing the dicing tape 3 and the support ring 2 is completely disengaged from the dicing tape 3.
The present invention is described in detail above by specific embodiment, but these not form the limit to the present invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, and these also should
It is considered as protection scope of the present invention.
Claims (5)
1. a kind of ring cutting process of too bulging reduction process, it is characterised in that comprise the following steps：
Step 1: wafer rear is thinned using too bulging reduction process method, the center section of the wafer is thinned to and needed
The thickness wanted, the marginal portion of the wafer are not thinned and form a support ring；
Step 2: back process is completed at the back side of the wafer after being thinned；
Step 3: the back side for the wafer for completing back process is attached on dicing tape and is fixed on scribing ring；
Step 4: carrying out ring cutting technique, the ring cutting technique is included step by step：
Step 41, carry out at the outer ledge of the center section of the wafer cutting and make in the support ring and the wafer
Between partly separate；
Step 42, ring arm will be taken to be cut between the dicing tape and the support ring, it is described to take ring arm cutting
The surface of support ring described in Step wise approximation several times in journey, finally completely disengages the support ring from the dicing tape.
2. the ring cutting process of too bulging reduction process as claimed in claim 1, it is characterised in that：Ring is taken described in step 42
Approached every time in arm cut process the surface of the support ring distance it is equal and for it is described take the ring arm to start a cut through when away from
Number is supported with a distance from ring surface divided by approaches from described.
3. the ring cutting process of too bulging reduction process as claimed in claim 2, it is characterised in that：Ring is taken described in step 42
The surface of arm support ring described in points 2 times or 3 Step wise approximations in cut process.
4. the ring cutting process of too bulging reduction process as claimed in claim 1, it is characterised in that：Ring is taken described in step 42
Arm approaches behind the surface of the support ring and takes ring arm and the support ring surface fitting by described or take ring arm by described
Lift certain angle.
5. the ring cutting process of too bulging reduction process as claimed in claim 1, it is characterised in that：The dicing tape is purple
Adhesive tape or heat sensitive adhesive tape are irradiated in outside line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510977067.5A CN105428220B (en) | 2015-12-22 | 2015-12-22 | The ring cutting process of too bulging reduction process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510977067.5A CN105428220B (en) | 2015-12-22 | 2015-12-22 | The ring cutting process of too bulging reduction process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105428220A CN105428220A (en) | 2016-03-23 |
| CN105428220B true CN105428220B (en) | 2017-12-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510977067.5A Active CN105428220B (en) | 2015-12-22 | 2015-12-22 | The ring cutting process of too bulging reduction process |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546104B (en) * | 2016-06-28 | 2020-10-27 | 昇阳国际半导体股份有限公司 | Wafer thinning preparation process |
| CN107706120B (en) * | 2017-09-28 | 2019-10-22 | 深圳赛意法微电子有限公司 | The packaging method of ultra-thin wafers |
| CN111463141B (en) * | 2019-01-18 | 2023-05-02 | 芯恩（青岛）集成电路有限公司 | Method for improving utilization rate of wafer probe station |
| CN111446155A (en) * | 2020-03-30 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | Method for cutting crystal grains of thin wafer by using plasma dicing and laser equipment |
| CN112475627A (en) * | 2020-11-17 | 2021-03-12 | 华虹半导体(无锡)有限公司 | Ring removing method for Taiko thinned wafer |
| CN112992655B (en) * | 2021-02-05 | 2022-08-16 | 华虹半导体(无锡)有限公司 | Method for controlling Taiko wafer offset |
| CN113211664A (en) * | 2021-04-28 | 2021-08-06 | 华虹半导体(无锡)有限公司 | TAIKO ring taking device and method |
| CN114274387B (en) * | 2022-01-06 | 2022-07-05 | 沈阳和研科技有限公司 | Wafer ring removing machine |
| CN114582713B (en) * | 2022-03-11 | 2023-01-24 | 江苏京创先进电子科技有限公司 | Wafer processing method and wafer processing apparatus |
| CN115083889A (en) * | 2022-07-01 | 2022-09-20 | 上海积塔半导体有限公司 | Wafer grinding method and wafer processing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104517804A (en) * | 2014-07-29 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | Ring removing method of Taiko thinning process |
| CN104795317A (en) * | 2015-04-17 | 2015-07-22 | 上海华虹宏力半导体制造有限公司 | Wafer positioning method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5664656B2 (en) * | 2010-09-30 | 2015-02-04 | 富士電機株式会社 | Manufacturing method of semiconductor device |
| JP6341709B2 (en) * | 2014-03-18 | 2018-06-13 | 株式会社ディスコ | Wafer processing method |
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2015
- 2015-12-22 CN CN201510977067.5A patent/CN105428220B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104517804A (en) * | 2014-07-29 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | Ring removing method of Taiko thinning process |
| CN104795317A (en) * | 2015-04-17 | 2015-07-22 | 上海华虹宏力半导体制造有限公司 | Wafer positioning method |
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| Publication number | Publication date |
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| CN105428220A (en) | 2016-03-23 |
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