CN105428220A - Annular cutting process method of Taiko thinning process - Google Patents
Annular cutting process method of Taiko thinning process Download PDFInfo
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- CN105428220A CN105428220A CN201510977067.5A CN201510977067A CN105428220A CN 105428220 A CN105428220 A CN 105428220A CN 201510977067 A CN201510977067 A CN 201510977067A CN 105428220 A CN105428220 A CN 105428220A
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- Prior art keywords
- ring
- wafer
- support ring
- cutting
- arm
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000005520 cutting process Methods 0.000 title claims abstract description 42
- 239000002390 adhesive tape Substances 0.000 claims abstract description 9
- 238000011946 reduction process Methods 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 4
- 238000013459 approach Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 241001050985 Disco Species 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses an annular cutting process method of a Taiko thinning process. The annular cutting process method comprises the following steps of thinning the back surface of a wafer by the Taiko thinning process method; completing a back surface process on the back surface of the wafer; and attaching the wafer onto a cutting adhesive tape and fixing the wafer on a scribing ring. The annular cutting process comprises the following steps of cutting an edge of an outer side at the middle part of the wafer; and cutting a ring taking arm to be between the cutting adhesive tape and a support ring by a successive approximation mode in multiple times. By the annular cutting process, the debris rate in the annular cutting step can be reduced.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit method of manufacturing technology, particularly relate to the ring cutting process that one rouses very much (Taiko) reduction process.
Background technology
Taiko reduction process is the ultra-thin reduction process of one developed by Japanese DISCO company, Taiko reduction process is not all thinning to the whole plane of wafer and silicon chip, but only carry out thinning to the mid portion of wafer, it is thinning that grinding is not carried out in the marginal portion of wafer, and the width not carrying out thinning marginal portion is about 2 millimeters ~ 5 millimeters and is not carried out thinning marginal portion formed support ring by this.
General silicon chip of working as is thinned to a certain degree, and when area is larger, its mechanical strength declines greatly, and for 8 inch silicon wafer, when silicon wafer thickness <200 micron, silicon chip can occur curling, therefore cannot proceed conveyance, transfer and processing.And after adopting Taiko reduction process, only the mid portion of silicon chip is thinning, the mid portion of silicon chip is utilized to form the device of integrated circuit; Utilize thicker support ring to keep the mechanical strength of whole silicon chip, prevent silicon chip from occurring curling, be conducive in subsequent technique the conveyance of silicon chip, transfer and processing.
Taiko reduction process mainly comprises pad pasting, thinning, takes off film, back process, and cutting film (Dicingtape) attaches, the steps such as ring cutting.
Ring cutting processing step wherein generally adopts machine cuts or laser cutting by support ring excision or adopts the method for grinding to be polished by described support ring.
As shown in Figure 1, be the schematic diagram of ring cutting technical process in existing method; Support ring 2 is formed with at the edge of wafer 1 after too bulging reduction process.Need to carry out ring cutting technique after positive back process all completes support ring 2 is taken off from described wafer 1.Need the surface of wafer 1 to be attached to dicing tape before ring cutting as Ultraviolet radiation adhesive tape (UV film) 3 is fixed on scribing ring 5, the surface of wafer 1 is then placed on absorption platform (chucktable, CK) on 4, wafer 1 is adsorbed on platform surface by the mode of vacuum or electrostatic by absorption platform 4, and wafer 1 is fixed.Afterwards shown in the outer ledge place of the mid portion of described wafer 1 and dotted line circle 7 position carry out cutting make described support ring 2 and described wafer 1 mid portion separately.To get ring arm 6 to be cut between described dicing tape 3 and described support ring 2, and get ring arm 6 and adopt disposable incision described in existing method, incision direction is as shown in the arrow of the horizontal direction in Fig. 1.
In the end in ring cutting process, support ring 2 viscosity at UV film and wafer 1 edge is stronger, need to use larger power in disposable like this cut process and moment in cut process can be made uneven, continuing larger moment wayward and easily cause, in the process of getting ring, folder film and the problem of fragment occur.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of ring cutting process of too bulging reduction process, can reduce the fragment rate in ring cutting step.
For solving the problems of the technologies described above, the ring cutting process of too bulging reduction process provided by the invention comprises the steps:
Step one, the too bulging reduction process method of use are carried out thinning to wafer rear, and the mid portion of described wafer is thinned to the thickness of needs, and the marginal portion of described wafer is not thinned and forms a support ring.
The back side of step 2, described wafer after thinning completes back process.
Step 3, being attached on dicing tape and being fixed on scribing ring of the described wafer of back process will be completed.
Step 4, carry out ring cutting technique, described ring cutting technique comprises step by step:
Step 41, carry out cutting at the outer ledge place of the mid portion of described wafer make described support ring and described wafer mid portion separately.
Step 42, ring arm will be got be cut between described dicing tape and described support ring, described in get the surface of ring arm support ring described in Step wise approximation several times in cut process, finally described support ring is departed from completely from described dicing tape.
Further improvement is, get described in step 42 distance of at every turn approaching the surface of described support ring in ring arm cut process equal and for described in get when ring arm starts to cut apart from the distance on described support ring surface divided by approaching number of times.
Further improvement is, gets the surface of ring arm support ring described in points 2 times or 3 Step wise approximation in cut process described in step 42.
Further improvement is, gets after ring arm approaches the surface of described support ring and get ring arm and the laminating of described support ring surface by described or described ring arm of getting is lifted certain angle described in step 42.
Further improvement is, described dicing tape is Ultraviolet radiation adhesive tape or heat sensitive adhesive tape.
The present invention will get the surface of Step wise approximation support ring several times in process that ring arm is cut between dicing tape and support ring, the force and moment in cut process can be made to obtain good control, make dicing tape and support ring separation process steadily, the fragment rate in ring cutting step can be reduced.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:
Fig. 1 is the schematic diagram of ring cutting technical process in existing method;
Fig. 2 is embodiment of the present invention method flow diagram;
Fig. 3 A-Fig. 3 C is the schematic diagram of embodiment of the present invention method ring cutting technical process.
Embodiment
As shown in Figure 2, be embodiment of the present invention method flow diagram; As shown in Fig. 3 A to Fig. 3 C, it is the schematic diagram of embodiment of the present invention method ring cutting technical process.The ring cutting process of the too bulging reduction process of the embodiment of the present invention comprises the steps:
Step one, the too bulging reduction process method of use are carried out thinning to wafer 1 back side, and the mid portion of described wafer 1 is thinned to the thickness of needs, and the marginal portion of described wafer 1 is not thinned and forms a support ring 2.
The back side of step 2, described wafer 1 after thinning completes back process.
Step 3, being attached on dicing tape 3 and being fixed on scribing ring 5 of the described wafer 1 of back process will be completed.Be preferably, described dicing tape 3 is Ultraviolet radiation adhesive tape or heat sensitive adhesive tape.
Wherein, the surface of wafer 1 is placed on absorption platform 4, and wafer 1 is adsorbed on platform surface by the mode of vacuum or electrostatic by absorption platform 4, and wafer 1 is fixed.
After the front of described wafer 1 being attached on dicing tape 3 in step 3, be fixed on scribing ring 5 before, the surface being also included in described wafer 1 forms the step of photoresist 4, and described photoresist 4 is for protecting described wafer 1 surface.
Step 4, carry out ring cutting technique, described ring cutting technique comprises step by step:
Step 41, shown in the outer ledge place of the mid portion of described wafer 1 and dotted line frame 7 position carry out cutting make described support ring 2 and described wafer 1 mid portion separately.
Step 42, ring arm 6 will be got be cut between described dicing tape 3 and described support ring 2, described in get the surface of ring arm 6 support ring 2 described in Step wise approximation several times in cut process, finally described support ring 2 is departed from completely from described dicing tape 3.
In the embodiment of the present invention, the distance of getting the surface at every turn approaching described support ring 2 in ring arm 6 cut process described in step 42 equal and for described in get when ring arm 6 starts to cut apart from the distance on described support ring 2 surface divided by approaching number of times.Described distance of getting ring arm 6 and described support ring 2 surface is as shown in arrow upwards in Fig. 3 A, and incision direction is as shown in the arrow left of the horizontal direction in Fig. 3 A.Fig. 3 A is the schematic diagram of incision initial condition; Fig. 3 B is the schematic diagram in cut process, and the distance of getting ring arm 6 and described support ring 2 surface described in can finding out diminishes; Fig. 3 C gets the schematic diagram behind the surface of support ring 2 described in ring arm 6 Step wise approximation described in being.
The surface of ring arm 6 support ring 2 described in points 2 times or 3 Step wise approximation in cut process is got described in step 42 in the embodiment of the present invention.Also the more number of times being greater than 3 can be adopted in other embodiments.
Get described in step 42 after ring arm 6 approaches the surface of described support ring 2 and get ring arm 6 and the laminating of described support ring 2 surface by described or described ring arm 6 of getting is lifted certain angle.Wherein lifting certain angle can shown in reference diagram 3C, describedly get the root of ring arm 6 and the surface contact of described support ring 2, there is certain having a downwarp at described tip of getting ring arm 6, and is so more conducive to tearing described dicing tape 3 and described support ring 2 is departed from completely from described dicing tape 3.
Above by specific embodiment to invention has been detailed description, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (5)
1. a ring cutting process for too bulging reduction process, is characterized in that, comprise the steps:
Step one, the too bulging reduction process method of use are carried out thinning to wafer rear, and the mid portion of described wafer is thinned to the thickness of needs, and the marginal portion of described wafer is not thinned and forms a support ring;
The back side of step 2, described wafer after thinning completes back process;
Step 3, being attached on dicing tape and being fixed on scribing ring of the described wafer of back process will be completed;
Step 4, carry out ring cutting technique, described ring cutting technique comprises step by step:
Step 41, carry out cutting at the outer ledge place of the mid portion of described wafer make described support ring and described wafer mid portion separately;
Step 42, ring arm will be got be cut between described dicing tape and described support ring, described in get the surface of ring arm support ring described in Step wise approximation several times in cut process, finally described support ring is departed from completely from described dicing tape.
2. the ring cutting process of too bulging reduction process as claimed in claim 1, is characterized in that: get described in step 42 distance of at every turn approaching the surface of described support ring in ring arm cut process equal and for described in get when ring arm starts to cut apart from the distance on described support ring surface divided by approaching number of times.
3. the ring cutting process of too bulging reduction process as claimed in claim 2, is characterized in that: the surface of getting ring arm support ring described in points 2 times or 3 Step wise approximation in cut process described in step 42.
4. the ring cutting process of too bulging reduction process as claimed in claim 1, is characterized in that: get described in step 42 after ring arm approaches the surface of described support ring and get ring arm and the laminating of described support ring surface by described or described ring arm of getting is lifted certain angle.
5. the ring cutting process of too bulging reduction process as claimed in claim 1, is characterized in that: described dicing tape is Ultraviolet radiation adhesive tape or heat sensitive adhesive tape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510977067.5A CN105428220B (en) | 2015-12-22 | 2015-12-22 | The ring cutting process of too bulging reduction process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510977067.5A CN105428220B (en) | 2015-12-22 | 2015-12-22 | The ring cutting process of too bulging reduction process |
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| CN105428220A true CN105428220A (en) | 2016-03-23 |
| CN105428220B CN105428220B (en) | 2017-12-05 |
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| CN201510977067.5A Active CN105428220B (en) | 2015-12-22 | 2015-12-22 | The ring cutting process of too bulging reduction process |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546104A (en) * | 2016-06-28 | 2018-01-05 | 昇阳国际半导体股份有限公司 | Wafer thinning preparation process |
| CN107706120A (en) * | 2017-09-28 | 2018-02-16 | 深圳赛意法微电子有限公司 | The method for packing of ultra-thin wafers |
| CN111446155A (en) * | 2020-03-30 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | Method for cutting crystal grains of thin wafer by using plasma dicing and laser equipment |
| CN111463141A (en) * | 2019-01-18 | 2020-07-28 | 芯恩（青岛）集成电路有限公司 | Method for improving utilization rate of wafer probe station |
| CN112475627A (en) * | 2020-11-17 | 2021-03-12 | 华虹半导体(无锡)有限公司 | Ring removing method for Taiko thinned wafer |
| CN112992655A (en) * | 2021-02-05 | 2021-06-18 | 华虹半导体(无锡)有限公司 | Method for controlling Taiko wafer offset |
| CN113211664A (en) * | 2021-04-28 | 2021-08-06 | 华虹半导体(无锡)有限公司 | TAIKO ring taking device and method |
| CN114274387A (en) * | 2022-01-06 | 2022-04-05 | 沈阳和研科技有限公司 | Wafer ring removing machine |
| CN114582713A (en) * | 2022-03-11 | 2022-06-03 | 江苏京创先进电子科技有限公司 | Wafer processing method and wafer processing apparatus |
| CN115083889A (en) * | 2022-07-01 | 2022-09-20 | 上海积塔半导体有限公司 | Wafer grinding method and wafer processing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130196457A1 (en) * | 2010-09-30 | 2013-08-01 | Fuji Electric Co., Ltd. | Method of manufacturing semiconductor device |
| CN104517804A (en) * | 2014-07-29 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | Ring removing method of Taiko thinning process |
| CN104795317A (en) * | 2015-04-17 | 2015-07-22 | 上海华虹宏力半导体制造有限公司 | Wafer positioning method |
| JP2015177170A (en) * | 2014-03-18 | 2015-10-05 | 株式会社ディスコ | Processing method of wafer |
-
2015
- 2015-12-22 CN CN201510977067.5A patent/CN105428220B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130196457A1 (en) * | 2010-09-30 | 2013-08-01 | Fuji Electric Co., Ltd. | Method of manufacturing semiconductor device |
| JP2015177170A (en) * | 2014-03-18 | 2015-10-05 | 株式会社ディスコ | Processing method of wafer |
| CN104517804A (en) * | 2014-07-29 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | Ring removing method of Taiko thinning process |
| CN104795317A (en) * | 2015-04-17 | 2015-07-22 | 上海华虹宏力半导体制造有限公司 | Wafer positioning method |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546104A (en) * | 2016-06-28 | 2018-01-05 | 昇阳国际半导体股份有限公司 | Wafer thinning preparation process |
| CN107706120A (en) * | 2017-09-28 | 2018-02-16 | 深圳赛意法微电子有限公司 | The method for packing of ultra-thin wafers |
| CN107706120B (en) * | 2017-09-28 | 2019-10-22 | 深圳赛意法微电子有限公司 | The packaging method of ultra-thin wafers |
| CN111463141A (en) * | 2019-01-18 | 2020-07-28 | 芯恩（青岛）集成电路有限公司 | Method for improving utilization rate of wafer probe station |
| CN111446155A (en) * | 2020-03-30 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | Method for cutting crystal grains of thin wafer by using plasma dicing and laser equipment |
| CN112475627A (en) * | 2020-11-17 | 2021-03-12 | 华虹半导体(无锡)有限公司 | Ring removing method for Taiko thinned wafer |
| CN112992655A (en) * | 2021-02-05 | 2021-06-18 | 华虹半导体(无锡)有限公司 | Method for controlling Taiko wafer offset |
| CN112992655B (en) * | 2021-02-05 | 2022-08-16 | 华虹半导体(无锡)有限公司 | Method for controlling Taiko wafer offset |
| CN113211664A (en) * | 2021-04-28 | 2021-08-06 | 华虹半导体(无锡)有限公司 | TAIKO ring taking device and method |
| CN114274387A (en) * | 2022-01-06 | 2022-04-05 | 沈阳和研科技有限公司 | Wafer ring removing machine |
| CN114582713A (en) * | 2022-03-11 | 2022-06-03 | 江苏京创先进电子科技有限公司 | Wafer processing method and wafer processing apparatus |
| CN114582713B (en) * | 2022-03-11 | 2023-01-24 | 江苏京创先进电子科技有限公司 | Wafer processing method and wafer processing apparatus |
| CN115083889A (en) * | 2022-07-01 | 2022-09-20 | 上海积塔半导体有限公司 | Wafer grinding method and wafer processing method |
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| CN105428220B (en) | 2017-12-05 |
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