JP2006156456A - Film peeling method and film peeling apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily form a peeling start point when peeling a surface protective film.
A film peeling method for peeling a film (3) attached to a first part (121) including at least a part of an outer periphery of a wafer (20) and a second part (122) obtained by removing the first part from the wafer. In the method, the release tape (103) is paid out on the film attached to the first and second portions of the wafer, and the first portion and / or the second portion is so arranged that the film of the first portion of the wafer is lower than the film of the second portion. The two parts are moved relative to each other so that the film is detached from the first part of the wafer, the peeling means (146) is pressed against the film detached from the first part via the peeling tape, and the peeling means is moved along the surface of the wafer. Film peeling method and film for carrying out this method by peeling the film from the second part of the wafer A stripping device is provided.
[Selection] Figure 8

Description

  The present invention relates to a film peeling method used for peeling a film attached to the surface of a wafer, particularly a surface protective film, and a film peeling apparatus for carrying out this method.

  In the semiconductor manufacturing field, wafers tend to increase in size year by year, and wafers are becoming thinner to increase mounting density. In order to thin the wafer, back grinding (back surface grinding) is performed to grind the back surface of the wafer. Prior to back grinding, a surface protective film is applied to the surface of the wafer in order to protect the elements formed on the surface of the wafer. Next, the back surface of the wafer is ground with the wafer surface adsorbed to the adsorption table.

  As is well known, a chamfered portion for preventing dust generation is formed on the outer peripheral portion of the wafer, and the cross section at the wafer edge is narrower toward the edge. In recent years, it has been required to perform backside grinding significantly, so when performing backside grinding exceeding half of the wafer thickness, the taper part thinner than the wafer thickness after backside grinding is the wafer. It will come to be formed in the outer peripheral part.

In order to solve such a problem, Patent Document 1 discloses that a notch is formed at the boundary between the chamfered portion and the flat portion of the outer peripheral portion of the wafer, and the wafer is backside until the thickness of the wafer becomes thinner than the depth of cut. Grinding is disclosed. In such a case, even if a crack or a chip occurs in the outer peripheral portion of the wafer, the progress of the crack or the chip stops at the cutting position. For this reason, in patent document 1, it is prevented that the semiconductor element provided in the flat part of the wafer becomes defective (for example, refer patent document 1).
Japanese Patent Laid-Open No. 2000-173961 (FIG. 1)

  By the way, since the thickness of the wafer after back grinding is considerably reduced, the back side of the wafer is affixed to a dicing tape after back grinding, and this dicing tape is fixed to a frame that is slightly larger than the wafer, thereby facilitating handling of the wafer. It has been done. Thereafter, the wafer is supplied to the peeling apparatus together with the frame. In the peeling device, the surface protective film is peeled by sticking the peeling tape to the surface protective film with the peeling member and then moving the peeling member along the surface of the wafer.

  However, since the wafer edge is formed as a chamfered portion in addition to the considerably small thickness of the wafer as described in Patent Document 1, the edge portion of the wafer attached to the frame via the dicing tape is used. When pressing the peeling member, the peeling member may slide off from the chamfered part. In such a case, the peeling tape and the dicing tape of the peeling member are affixed, and as a result, the peeling start point is appropriately set. It may not be possible to form. Further, if the peeling member attached to the dicing tape is forcibly separated, a large force is applied to the edge of the wafer and the wafer is damaged.

  This invention is made | formed in view of such a situation, and provides the film peeling apparatus and the film peeling apparatus for implementing this method which can form a peeling start location easily at the time of peeling of a surface protection film. For the purpose.

  In order to achieve the above-described object, according to the first aspect of the invention, the film attached to the first portion including at least a part of the outer peripheral portion of the wafer and the second portion excluding the first portion from the wafer is peeled off. In the film peeling method, a peeling tape is paid out on the film stuck to the first and second parts of the wafer so that the film of the first part of the wafer is lower than the film of the second part. The first part and / or the second part are moved relative to each other to separate the film from the first part of the wafer, and the peeling means is separated from the first part via the peeling tape. Pressing the peeling means along the surface of the wafer to move the film to the second of the wafer Film peeling method so as to know delamination is provided.

  According to the second invention, a groove is formed on one surface of the wafer inside the outer peripheral portion of the wafer, a film is pasted on the one surface of the wafer on which the groove is formed, and at least the bottom of the groove is reached. Until the surface of the wafer opposite to the one surface is ground, whereby the wafer is divided into a first portion including at least a portion of the outer periphery and a second portion excluding the first portion from the wafer. In addition, the peeling tape is fed out on the film stuck to the first and second parts of the wafer, and the film of the first part of the wafer is positioned below the film of the second part. Moving the first part and / or the second part relative to each other to remove the film from the first part of the wafer. Pressing the peeling means against the film detached from the first part via the peeling tape, and moving the peeling means along the surface of the wafer so as to peel the film from the second part of the wafer. A film peeling method is provided.

  That is, in the first and second inventions, since the peeling tape can be easily applied to the film part detached from the first part of the wafer, the part of the detached film can function as a peeling start point, and therefore the peeling means is peeled off by the peeling means. The starting point can be easily formed.

According to a third invention, in the second invention, the groove is formed by forming a modified region inside the wafer by a laser.
That is, in the third aspect, the groove can be formed in the wafer without causing cracks or the like deviating from the planned cutting line on the surface of the wafer and without melting the surface of the wafer.

According to a fourth invention, in any one of the first to third inventions, the wafer is attached to a dicing tape on a surface opposite to the surface to which the film is attached, and the dicing tape is used. Is fixed to the frame.
That is, in the fourth invention, the dicing tape around the wafer is also moved away from the surface protective tape by moving the first portion relatively downward. Therefore, in the fourth aspect, it is possible to avoid the peeling tape from adhering to the dicing tape. Also, since the adhesive force between the dicing tape and the wafer is usually larger than the adhesive force between the wafer and the film, the film can be easily removed from the first part of the wafer by moving the first part relatively downward. Can peel.

  According to a fifth aspect of the present invention, in the film peeling apparatus for peeling the film attached to the first portion including at least a part of the outer peripheral portion of the wafer and the second portion excluding the first portion from the wafer, Tape feeding means for feeding a release tape onto the film affixed to the first and second parts, and the first part so that the film of the first part of the wafer is positioned below the film of the second part And / or a moving means for relatively moving the second part to separate the film from the first part of the wafer, and the peeling tape fed from the tape feeding means is detached from the first part. Pressing the film against the surface of the wafer by moving it along the surface of the wafer Peeling apparatus is provided comprising a release means for peeling the two-part.

  According to the sixth aspect of the invention, groove forming means for forming a groove on the inner surface of the outer surface of the wafer on one surface of the wafer, and film attaching means for attaching a film to the one surface of the wafer on which the groove is formed; Grinding means for grinding a surface of the wafer opposite to the one surface at least until reaching the bottom of the groove, whereby the wafer comprises a first portion including the outer peripheral portion and a first portion including the outer peripheral portion. And a tape feeding means for feeding a release tape onto the film affixed to the first and second portions of the wafer, and Moving the first part and / or the second part relative to each other so that the film of the first part of the wafer is located above the film of the second part; Moving means for separating the film from the first portion of the wafer, and pressing the release tape fed from the tape feeding means against the film detached from the first portion to move along the surface of the wafer; There is provided a peeling apparatus comprising peeling means for peeling the film from the second portion of the wafer.

  That is, in the fifth and sixth inventions, the peeling tape can be easily applied to the film portion detached from the first portion of the wafer, so that the detached film portion can function as a peeling start location, and therefore the peeling means peels off. The starting point can be easily formed.

According to a seventh aspect, in the sixth aspect, the groove is formed by forming a modified region inside the wafer by a laser.
That is, in the seventh invention, grooves can be formed in the wafer without causing cracks or the like deviating from the planned cutting line on the surface of the wafer and without melting the surface of the wafer.

According to an eighth invention, in any one of the fifth to seventh inventions, the wafer is affixed to a dicing tape on a surface opposite to a surface to which the film is affixed, and the dicing tape Is fixed to the frame.
That is, in the eighth aspect, the dicing tape around the wafer is also moved away from the surface protection tape by moving the first portion relatively downward. Therefore, in the eighth aspect, it is possible to avoid the peeling tape from adhering to the dicing tape. Also, since the adhesive force between the dicing tape and the wafer is usually larger than the adhesive force between the wafer and the film, the film can be easily removed from the first part of the wafer by moving the first part relatively downward. Can peel.

According to each invention, the common effect that a peeling start location can be easily formed by a peeling means can be produced.
Furthermore, according to the third and sixth inventions, it is possible to produce an effect that a crack or the like deviating from a planned cutting line occurs on the surface of the wafer, and that the surface of the wafer can be prevented from melting.
Furthermore, according to the 4th and 8th invention, there can exist an effect that a peeling tape can avoid adhering to a dicing tape.

Embodiments of the present invention will be described below with reference to the accompanying drawings. In the following drawings, the same members are denoted by the same reference numerals. In order to facilitate understanding, the scales of these drawings are appropriately changed.
FIG. 1 is a schematic diagram showing a wafer processing apparatus according to the present invention. Further, FIG. 2 is a view showing a wafer. As shown in FIG. 2, a plurality of circuit patterns C are formed in a lattice pattern on the surface 21 of the wafer 20 in the previous step. As can be seen from FIG. 2, all the circuit patterns C are formed on the flat portion 27 of the wafer 20, and the outer peripheral portion of the wafer 20 positioned around the flat portion 27 is formed as a chamfered portion 28. Such a circuit pattern C is not formed on the back surface 22 of the wafer 20. It is assumed that such a wafer 20 is supplied to the wafer processing apparatus 100 shown in FIG.

  As shown in FIG. 1, the wafer processing apparatus 100 includes a tip dicing unit 150 that forms a groove or a cut in the surface 21 of the wafer 20, and a pasting unit for pasting the surface protection film 3 on the surface 21 of the wafer 20. 200, a reversing unit 300 for turning the wafer 20 upside down, a back grinding unit 350 for grinding the back surface 22 of the wafer 20, a UV irradiation unit 400 for irradiating the surface protection film 3 of the wafer 20 with ultraviolet rays (UV), a wafer The peeling unit 500 which peels 20 surface protection films 3 is included. Between each unit of the wafer processing apparatus 100, a moving device such as a robot arm is used to move the wafer 20. However, these are general devices, and illustration and description thereof are omitted.

  The wafer 20 is first supplied to the first dicing unit 150 of the wafer processing apparatus 100. In the first dicing unit 150, the surface 21 of the wafer 20 is first diced. FIG. 3A is a diagram showing a dicing state in the previous dicing unit. As shown in FIG. 3A, the wafer 20 is arranged so that the surface 21 faces upward, and a groove 25 is formed on the surface 21 of the wafer 20 by a relatively small dicing blade 151. In FIG. 3A, the groove 25 is formed on a string in contact with the boundary line x1 between the chamfered portion 28 and the flat portion 27 of the wafer 20, but the groove 25 is flatter than the string 27. It may be formed on the side. The groove 25 is formed by moving the dicing blade 151 relatively along the chord contacting the boundary line x1 between the chamfered portion 28 and the flat portion 27. 3A is approximately half the thickness of the wafer 20, the groove 25 may be shallower than this.

  In FIG. 3A, the groove 25 is formed by the dicing blade 151, but the groove 25 may be formed by other methods. Moreover, the groove | channel 25 can also be formed with a laser dicing apparatus.

  FIG. 4 is a side sectional view for explaining laser dicing. In FIG. 4, the laser V is irradiated to the surface 21 side of the wafer 20 through a condenser lens 85 from a laser source (not shown) under the condition that multiphoton absorption occurs. At this time, the condensing point 84 is adjusted to a side somewhat closer to the surface 21 inside the wafer 20. As a result, a modified region is formed around the condensing point 84. Next, when the laser V and the condenser lens 85 are moved along the arrow X <b> 3, a band-shaped modified region 86 is formed inside the wafer 20.

  In laser dicing, the laser V is transmitted through the wafer 20 and multiphoton absorption is generated inside the wafer 20 to form a modified region. Therefore, the laser V is hardly absorbed by the wafer 20 on the surface 21 of the wafer 20, and as a result, the surface 21 of the wafer 20 is not melted, and cracks or the like deviated from the planned cutting line are formed on the surface of the wafer. It does not occur.

  Since the modified region 86 is formed on a side somewhat closer to the surface 21, when the modified region 86 is naturally cracked in the thickness direction toward the surface 21, a groove 25 corresponding to the width of the laser V is formed. It becomes like this.

  Next, the wafer 20 is transferred from the previous dicing unit 150 to the pasting unit 200. FIG.3 (b) is a figure which shows the sticking state of the surface protection film 3 in a sticking unit. As shown in FIG. 3B, in the sticking unit 200, the surface protection film 3 is stuck on the surface 21 of the wafer 20. The surface protective film 3 serves to protect the circuit pattern C formed on the surface 21 of the wafer 20 in a back grinding process as a post process.

  After the surface protective film 3 is attached, the wafer 20 is transferred from the attaching unit 200 to the reversing unit 300. The inversion unit 300 serves to invert the wafer 20. The wafer 20 having the surface protection film 3 attached to the surface 21 in the attaching unit 200 has the surface 21 facing upward. Therefore, in the reversing unit 300, such a wafer 20 is turned upside down, and the surface 21 of the wafer 20 to which the surface protective film 3 is attached faces downward. Of course, it is possible to simply pass the wafer 20 through the reversing unit 300 without inverting the wafer 20.

  The wafer 20 reversed in the reversing unit 300 is supplied to the back surface grinding unit 350 shown in FIG. The wafer 20 is supplied to the back surface grinding unit 350 with the back surface 22 facing upward. FIG. 5A is a schematic side view showing a state of back grinding in the back grinding unit. As shown in FIG. 5A, in the back surface grinding unit 350, the front surface 21 of the wafer 20 is adsorbed by an adsorption unit (not shown). As described above, since the surface protection film 3 is adhered to the surface 21 of the wafer 20 in the affixing unit 200, even if the surface 21 of the wafer 20 is adsorbed, a circuit formed on the surface 21 Pattern C is not damaged.

  Next, a grinding part 81 is disposed on the back surface 22 of the wafer 20, and the grinding part 81 reciprocates on the back surface 22 of the wafer 20 in the direction of the arrow as shown in FIG. As shown in FIG. 5B, which is a schematic side view showing the state of the wafer after the back surface grinding, the back surface 22 of the wafer 20 is ground by the grinding portion 81 until it reaches at least the bottom of the groove 25. As a matter of course, the back surface may be further ground beyond the bottom of the groove 25. As a result, the thickness of the wafer 20 is reduced from the initial thickness L0 to the post-grinding thickness L0 ', and the grinding unit 81 stops.

  Since the groove 25 is formed along the entire chord contacting the boundary line x1 between the chamfered portion 28 and the flat portion 27, when the back surface 22 of the wafer 20 is searched until the bottom of the groove 25 is reached, the wafer 20 Is divided into a relatively small first portion 121 and a remaining second portion 122 excluding the first portion 121. In the illustrated embodiment, the first portion 121 includes a part of the chamfered portion 28. On the other hand, the second portion 122 includes a flat portion 27 and the remaining chamfered portion 28.

  After the back surface grinding, the back surface 22 ′ of the wafer 20 is affixed to the dicing tape 31, and this dicing tape 31 is fixed to the dicing frame 15 (see FIG. 1) supplied to the back surface grinding unit 350. The dicing frame 15 serves to facilitate handling of the wafer 20 whose thickness has been reduced by back surface grinding.

  Then, as can be seen with reference to FIG. 1, the wafer 20 is returned from the back grinding unit 350 back to the reversing unit 300. In the reversing unit 300, the wafer 20 is turned upside down again, so that the surface 21 of the wafer 20 faces upward.

  By the way, in a certain kind of surface protection film 3, there exists what the adhesive force of the surface protection film 3 falls when a predetermined amount of ultraviolet rays are irradiated. When such a surface protective film 3 is employed, the ultraviolet irradiation unit, that is, the UV irradiation unit 400 of the wafer processing apparatus 100 shown in FIG. 1 can be used. The wafer 20 is supplied to the UV irradiation unit 400 together with the dicing frame 15. In the UV irradiation unit 400, the surface protection film 3 is irradiated with a predetermined amount of ultraviolet rays by the UV lamp 490, and then the wafer 20 is supplied to the peeling unit 500. In addition, when using the surface protection film 3 whose adhesive force does not change due to the irradiation of ultraviolet rays, it is not necessary to irradiate the wafer 20 with ultraviolet rays in the UV irradiation unit 400, so the wafer 20 is simply passed through the UV irradiation unit 400. The

  Finally, the wafer 20 is supplied to the peeling unit 500 of the wafer processing apparatus 100. FIG. 6 is a view for explaining the state of the wafer in the peeling unit. As shown in FIG. 6, the peeling unit 500 includes holding tables 61 and 62, such as suction tables, for holding the first portion 121 and the second portion 122 of the wafer 20, respectively. FIG. 7 is a plan view of the holding table. As can be seen from FIG. 7, the holding tables 61 and 62 have shapes corresponding to the first portion 121 and the second portion 122 of the wafer 20, respectively. In the embodiment shown in FIG. 7, the surface of the holding table 62 has a shape in which a part of a circle is cut out, and the surface of the holding table 61 has a shape corresponding to the cutout portion. In the drawing, a gap corresponding to the width of the groove 25 is formed between the holding tables 61 and 62, but the gap between the holding tables 61 and 62 may not be formed.

  Initially, the holding surfaces of the holding tables 61 and 62 are the same plane. Accordingly, the wafer 20 transferred to the peeling unit 500 is held by the holding tables 61 and 62 such that the first portion 121 is held by the holding table 61 and the second portion 122 is held by the holding table 62. In the drawing, although the dicing frame 15 of the wafer 20 is not held, it is actually held appropriately by holding means (not shown) for the dicing frame 15. And when peeling off the surface protective film 3, the holding means for the dicing frame 15 can be raised and lowered as appropriate.

  As shown in FIG. 6, the peeling unit 500 is provided with a peeling roller 146 that can move up and down and can move horizontally. As shown in the figure, the length of the peeling roller 146 is larger than the diameter of the wafer 20. Further, the peeling tape 103 is fed from the tape feeding means 142. The peeling tape 103 is wound around a tape winding means (not shown) via a peeling roller 146.

  FIG. 8A to FIG. 8C are views for explaining the peeling action of the surface protective film in the peeling unit. In FIG. 8A, the back surfaces of the first portion 121 and the second portion 122 are held by the holding table 61 and the holding table 62. The peeling roller 146 moves on the surface protective film 3 of the wafer 20 in the direction of the arrow in FIG. 8A, whereby the peeling tape 103 is attached to the surface protective film 3 of the wafer 20. When the peeling roller 146 reaches the vicinity of the edge of the surface protective film 3 of the first portion 121, the peeling roller 146 stops at that position. At this time, it is preferable that the peeling roller 146 is positioned slightly inside the outermost edge portion of the surface protective film 3.

  Next, as shown in FIG. 8B, the holding table 61 positioned below the peeling roller 146 is lowered. Since the adhesive force between the first portion 121 of the wafer 20 and the dicing tape 31 is usually larger than the adhesive force between the first portion 121 and the surface protective film 3, the surface protective film 3 is lowered by lowering the holding table 61. Is detached from the first portion 121. The detached surface protective film 3 extends substantially linearly like the rest of the surface protective film 3 due to the rigidity of the surface protective film 3 itself. On the other hand, the dicing tape 31 between the first portion 121 and the holding table 61 is partially curved between the holding table 61 and the holding table 62.

  Thereafter, the peeling roller 146 is slightly moved downward to press the peeling roller 146 against the surface protection film 3 detached from the first portion 121. Thereby, the adhesive force between the peeling tape 103 located under the peeling roller 146 and the surface protective film 3 is locally increased, and the adhesive force between the peeling tape 103 and the surface protective film 3 in this place is It becomes higher than the adhesive force between the surface protection film 3 and the second part 122. Therefore, the part from which the surface protective film 3 is detached functions as a peeling start point, that is, a trigger for peeling.

  Next, as shown by an arrow in FIG. 8C, the peeling roller 146 is moved in parallel to the surface of the wafer 20 while winding the peeling tape 103 by a tape winding means (not shown). Thereby, the surface protection film 3 is wound up by the peeling tape 103 from a peeling start location, and, thereby, the surface protection film 3 of the 2nd part 122 comes to peel.

  Since the first portion 121 of the wafer 20 includes the chamfered portion 28, generally, when the peeling roller 146 is moved downward in the first portion 121, the moving distance of the peeling roller 146 is increased. On the other hand, in the present invention, the surface protective film 3 is detached from the first portion 121 as shown in FIG. Therefore, the moving distance to the lower side of the peeling roller 146 is relatively small, and the adhesive force between the surface protective film 3 and the peeling tape 103 is locally increased by slightly moving the peeling roller 146 downward. Thereby, the peeling start location can be easily formed.

  Further, as can be seen from FIG. 8B, when the first portion 121 of the wafer 20 is lowered by the holding table 61, the dicing tape 31 moves away from the detached surface protection film 3. For this reason, in this invention, the clearance gap between the surface protection film 3 and the dicing tape 31 becomes larger than the case of an initial state (refer Fig.8 (a)), As a result, peeling of the peeling roller 146 is carried out. It is also possible to suppress the occurrence of a problem that the tape 103 contacts and sticks to the dicing tape 31.

  FIG. 9A to FIG. 9C are views for explaining the peeling action of the surface protective film in the peeling unit according to another embodiment of the present invention. In other embodiments shown in these drawings, a single holding table 65 is provided instead of the two holding tables 61 and 62. As shown in the drawing, a part of the holding surface (upper surface) of the holding table 65 is notched, and an inclined surface 66 is formed. The inclined surface 66 is formed in a shape corresponding to the first portion 121 of the wafer 20 shown in FIG. The inclined angle of the inclined surface 66 is an angle that prevents the surface protective film 3 from contacting the dicing tape 31 when the surface protective film 3 is detached. In the illustrated embodiment, the inclination angle of the inclined surface 66 is about 30 ° with respect to the holding surface of the holding table 65.

  As shown in FIG. 9A, which is an initial state, the wafer 20 is held on the holding table 65 so that the first portion 121 of the wafer 20 is positioned above the inclined surface 66. Next, as indicated by an arrow in FIG. 9B, the dicing frame 15 positioned on the inclined surface 66 side is lowered by holding means (not shown) for the dicing frame 15. In general, the adhesive force between the dicing tape 31 and the first portion 121 of the wafer 20 is larger than the adhesive force between the first portion 121 and the surface protective film 3. Therefore, when the dicing frame 15 is lowered, the first portion 121 of the wafer 20 is detached from the surface protection film 3, and the lower surface of the first portion 121 comes into contact with the inclined surface 66 through the dicing tape 31. On the other hand, the surface protective film 3 detached from the first portion 121 extends substantially linearly like the remaining portions of the surface protective film 3 due to the rigidity of the surface protective film 3 itself.

  Thereafter, the peeling roller 146 is slightly moved downward to press the peeling roller 146 against the surface protection film 3 detached from the first portion 121. As in the above-described embodiment, since the adhesive force between the peeling tape 103 located below the peeling roller 146 and the surface protective film 3 is locally increased, the detached portion of the surface protective film 3 starts peeling. It will function as a part, that is, a trigger for peeling.

  Next, as shown by an arrow in FIG. 9C, the peeling roller 146 is moved in parallel with the surface of the wafer 20 while winding the peeling tape 103 by a tape winding means (not shown). Thereby, the surface protection film 3 is wound up by the peeling tape 103 from a peeling start location, and, thereby, the surface protection film 3 of the 2nd part 122 comes to peel.

  Even in such an embodiment, since the surface protective film 3 is detached from the first portion 121, the moving distance to the lower side of the peeling roller 146 is relatively small, and therefore, the peeling start point can be easily formed. Can do. Further, in such an embodiment, since the surface protective film 3 is detached from the first portion 121, the occurrence of a problem that the peeling tape 103 of the peeling roller 146 contacts and sticks to the dicing tape 31 is suppressed. Obviously you can.

  In the illustrated embodiment, the surface protection film 3 is detached from the first part 121 by lowering the holding table 61, but the surface protection film 3 is detached from the first part 121 by raising the holding table 62. You may make it make it. Moreover, peeling of the surface protective film 3 using a peeling means other than the peeling roller 146, such as a peeling blade, is included in the scope of the present invention.

  Further, in the embodiment (not shown), the wafer 20 may be divided into a first portion 121 including the outer peripheral portion of the wafer 20 and a second portion 122 located inside the first portion 121. When the groove 25 is formed on the boundary line x1 between the chamfered portion 28 and the flat portion 27 (see FIG. 2), the first portion 121 includes the entire chamfered portion 28 of the wafer 20. The second part 122 is a part including the entire flat part 27. Since the thickness of the chamfered portion 28 which is the outer peripheral portion of the wafer 20 is small, if the back surface grinding is performed exceeding half of the thickness of the wafer, there is a possibility that the chamfered portion 28 usually generates cracks or chips. However, the first part 121 is a part that will not be used in the future, and since the ring-shaped groove 25 located inside the chamfered portion 28 is formed, it is assumed that the first part 121 is cracked or chipped. However, the progress of cracking or chipping stops at the groove 25. That is, in the embodiment not shown, such cracks or chips do not progress to the second portion 122 where the circuit pattern C is formed. Moreover, also in such embodiment which is not shown in figure, the same effect as embodiment described with reference to drawings is obtained by moving the 1st part 121 below and making the surface protection film 3 of the 1st part 121 detach | leave. It is clear that it is obtained.

1 is a schematic diagram showing a wafer processing apparatus according to the present invention. It is a figure which shows a wafer. (A) It is a figure which shows the dicing state in a front dicing unit. (B) It is a figure which shows the sticking state of the surface protection film in a sticking unit. It is a sectional side view for demonstrating a laser dicing. (A) It is a schematic side view which shows the state of the back surface grinding in a back surface grinding unit. (B) It is a schematic side view which shows the state of the wafer after back surface grinding. It is a figure for demonstrating the state of the wafer in a peeling unit. It is a top view of a holding table. (A) It is a 1st figure for demonstrating the peeling effect | action of the surface protection film in a peeling unit. (B) It is a 2nd figure for demonstrating the peeling effect | action of the surface protection film in a peeling unit. (C) It is a 3rd figure for demonstrating the peeling effect | action of the surface protection film in a peeling unit. (A) It is a 1st figure for demonstrating the peeling effect | action of the surface protection film in the peeling unit in other embodiment. (B) It is a 2nd figure for demonstrating the peeling effect | action of the surface protection film in the peeling unit in other embodiment. (C) It is a 3rd figure for demonstrating the peeling effect | action of the surface protection film in the peeling unit in other embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 3 Surface protection film 15 Dicing frame 20 Wafer 21 Front surface 22 Back surface 25 Groove 27 Flat part 28 Chamfering part 31 Dicing tape 61, 62 Holding table 66 Inclined surface 81 Grinding part 100 Wafer processing apparatus 103 Peeling tape 121 First part 122 Second part 142 Tape feeding means 146 Peeling roller 150 Tip dicing unit 200 Sticking unit 300 Reversing unit 350 Back surface grinding unit 400 UV irradiation unit 500 Peeling unit C Circuit pattern

Claims (8)

In the film peeling method for peeling the film attached to the first portion including at least a part of the outer peripheral portion of the wafer and the second portion excluding the first portion from the wafer,
Delivering a release tape on the film affixed to the first and second portions of the wafer,
The first portion and / or the second portion are moved relative to each other such that the film of the first portion of the wafer is below the film of the second portion, and the film is moved from the first portion of the wafer. Let go,
Pressing the peeling means against the film detached from the first part via the peeling tape,
The film peeling method which peeled off the said film from said 2nd part of the said wafer by moving the said peeling means along the surface of the said wafer. Forming a groove on the inner side of the outer periphery of the wafer on one side of the wafer;
Affixing a film on the one surface of the wafer in which the groove is formed,
Grind the surface of the wafer opposite the one surface at least until the bottom of the groove is reached, whereby the wafer removes the first portion from the wafer and the first portion including at least a portion of the outer periphery. Split the wafer into a second part,
further,
Delivering a release tape on the film affixed to the first and second portions of the wafer,
The first portion and / or the second portion are moved relative to each other so that the film of the first portion of the wafer is located below the film of the second portion, and the film is moved to the first portion of the wafer. Withdraw from
Pressing the peeling means against the film detached from the first part via the peeling tape,
The film peeling method which peeled off the said film from said 2nd part of the said wafer by moving the said peeling means along the surface of the said wafer.   The film peeling method according to claim 2, wherein the groove is formed by forming a modified region inside the wafer by a laser.   The said wafer is affixed on the dicing tape in the surface on the opposite side to the surface where the said film was affixed, and this dicing tape is being fixed to the flame | frame. Film peeling method. In the film peeling apparatus for peeling the film attached to the first part including at least a part of the outer periphery of the wafer and the second part excluding the first part from the wafer,
A tape feeding means for feeding a release tape onto the film affixed to the first and second portions of the wafer;
The first portion and / or the second portion are moved relative to each other so that the film of the first portion of the wafer is located below the film of the second portion, and the film is moved to the first portion of the wafer. A means of moving away from the vehicle,
Peeling the film from the first and second parts of the wafer by pressing the peeling tape fed from the tape feeding means against the film detached from the first part and moving along the surface of the wafer And a peeling device. Groove forming means for forming grooves on the inner side of the outer periphery of the wafer on one surface of the wafer;
Film attaching means for attaching a film to the one surface of the wafer in which the groove is formed;
Grinding means for grinding a surface opposite to the one surface of the wafer until at least the bottom of the groove is reached, whereby the wafer includes a first portion including the outer peripheral portion, and the first portion. Dividing the wafer into a second part located inward,
further,
A tape feeding means for feeding a release tape onto the film affixed to the first and second portions of the wafer;
The first portion and / or the second portion are moved relative to each other such that the film of the first portion of the wafer is located above the film of the second portion, and the film is moved to the first portion of the wafer. A means of moving away from the vehicle,
Peeling means for peeling the film from the second part of the wafer by pressing the peeling tape fed from the tape feeding means against the film detached from the first part and moving along the surface of the wafer; A peeling apparatus comprising:   The film peeling apparatus according to claim 6, wherein the groove is formed by forming a modified region inside the wafer with a laser.   The said wafer is affixed on the dicing tape in the surface on the opposite side to the surface where the said film was affixed, and this dicing tape is being fixed to the flame | frame. Film peeling device.

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