CN103668125A - Substrate table suitable for being used in tubular plasma film deposition device - Google Patents
Substrate table suitable for being used in tubular plasma film deposition device Download PDFInfo
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- CN103668125A CN103668125A CN201310754420.4A CN201310754420A CN103668125A CN 103668125 A CN103668125 A CN 103668125A CN 201310754420 A CN201310754420 A CN 201310754420A CN 103668125 A CN103668125 A CN 103668125A
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- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 230000008021 deposition Effects 0.000 title abstract description 9
- 239000010453 quartz Substances 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 238000009434 installation Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- 238000009826 distribution Methods 0.000 description 11
- 238000005137 deposition process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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Abstract
本发明涉及一种适用于管状等离子体薄膜沉积装置中的基片台，包括四根石英管（2）和固定在所述石英管（2）两端的支架盘（1），四根石英管（2）的端部均匀间隔设置在同一圆周上，其中一个支架盘（1）上设有进气口（4），另一个支架盘（1）封闭，所述石英管（2）上均匀设有多个安装基片的安装槽（3）。本发明解决了薄膜沉积过程中反应腔体内气体的均匀性问题，能够保证腔体内不同位置的基片都处在相同的气体氛围中，从而保证大批量生产时薄膜性能的一致性，可以进行薄膜的大批量沉积。
The invention relates to a substrate stage suitable for a tubular plasma thin film deposition device, comprising four quartz tubes (2) and support plates (1) fixed at both ends of the quartz tubes (2), four quartz tubes ( The ends of 2) are evenly spaced on the same circumference, one of the support discs (1) is provided with an air inlet (4), the other support disc (1) is closed, and the quartz tube (2) is evenly provided with A plurality of mounting grooves (3) for mounting substrates. The invention solves the uniformity problem of the gas in the reaction chamber during the thin film deposition process, and can ensure that the substrates at different positions in the chamber are in the same gas atmosphere, thereby ensuring the consistency of the thin film performance during mass production and enabling the thin film mass deposition.
Description
技术领域technical field
本发明涉及等离子体薄膜沉积装置，更具体地说，涉及一种适用于管状等离子体薄膜沉积装置中的基片台。The present invention relates to a plasma thin film deposition device, and more particularly to a substrate stage suitable for a tubular plasma thin film deposition device.
背景技术Background technique
等离子体增强化学气相沉积技术是近年来发展起来的一项新技术，在制备各种新材料方面具有很好的应用价值，如金刚石薄膜、类金刚石薄膜、纳米碳管等，是目前比较实用的一种薄膜制备方法。Plasma-enhanced chemical vapor deposition technology is a new technology developed in recent years. It has good application value in the preparation of various new materials, such as diamond films, diamond-like films, carbon nanotubes, etc., and is currently more practical. A film preparation method.
在各种等离子体增强化学气相沉积装置中，管状反应腔体是一种比较常见的结构，在管状反应腔体中使用的基片台，必须要满足以下几个要求：一方面，基片台的存在不能影响到反应腔体中等离子体的分布；另一方面，基片台要保证反应过程中所有基片所在区域的气体分布一致，这是因为薄膜沉积过程中反应气体的分布对薄膜的生长具有很大的影响，均匀的气体分布是大批量制备薄膜必须解决的问题。In various plasma-enhanced chemical vapor deposition devices, the tubular reaction chamber is a relatively common structure. The substrate stage used in the tubular reaction chamber must meet the following requirements: On the one hand, the substrate stage The existence of the presence of can not affect the distribution of the plasma in the reaction chamber; on the other hand, the substrate stage must ensure that the gas distribution in the area where all the substrates are located is consistent during the reaction process, because the distribution of the reaction gas during the film deposition process has a great influence on the distribution of the film. Growth has a great influence, and uniform gas distribution is a problem that must be solved for large-scale preparation of thin films.
在管状等离子体增强化学气相沉积装置中，对腔体中等离子体分布的研究也是一个很重要的课题，在这一研究中基片的定位是十分重要的一个环节，如何达到基片位置的精确定位也是基片台必须解决的问题。In the tubular plasma-enhanced chemical vapor deposition device, the research on the plasma distribution in the cavity is also a very important topic. In this research, the positioning of the substrate is a very important link. How to achieve the precise position of the substrate Positioning is also a problem that the substrate stage must solve.
发明内容Contents of the invention
本发明要解决的技术问题在于，提供一种适用于管状等离子体薄膜沉积装置中的基片台，能够保证腔体内不同位置的基片都处在相同的气体氛围中，从而保证大批量生产时薄膜性能的一致性。The technical problem to be solved by the present invention is to provide a substrate table suitable for a tubular plasma thin film deposition device, which can ensure that the substrates at different positions in the cavity are in the same gas atmosphere, thereby ensuring Consistency of film properties.
本发明解决其技术问题所采用的技术方案是：构造一种适用于管状等离子体薄膜沉积装置中的基片台，包括四根石英管和固定在所述石英管两端的支架盘，四根石英管的端部均匀间隔设置在同一圆周上，其中一个支架盘上设有进气口，另一个支架盘封闭，所述石英管上均匀设有多个安装基片的安装槽。The technical solution adopted by the present invention to solve the technical problem is: to construct a substrate stage applicable to a tubular plasma thin film deposition device, comprising four quartz tubes and support discs fixed at both ends of the quartz tubes, four quartz tubes The ends of the tubes are evenly spaced on the same circumference, one of the support discs is provided with an air inlet, and the other support disc is closed, and the quartz tube is evenly provided with a plurality of installation grooves for installing substrates.
上述方案中，至少一根所述石英管可拆卸安装在所述支架盘上。In the above solution, at least one quartz tube is detachably installed on the support plate.
上述方案中，所述支架盘和石英管采用透电磁波的石英材料制成。In the above solution, the support plate and the quartz tube are made of a quartz material that is transparent to electromagnetic waves.
上述方案中，设有进气口的支架盘与反应腔体进气口相扣，反应气体由支架盘进入石英管，从所述安装槽进入反应腔体。In the above solution, the support plate provided with the air inlet is interlocked with the air inlet of the reaction chamber, and the reaction gas enters the quartz tube from the support plate and enters the reaction chamber from the installation groove.
实施本发明的适用于管状等离子体薄膜沉积装置中的基片台，具有以下有益效果：Implementing the substrate table applicable to the tubular plasma thin film deposition device of the present invention has the following beneficial effects:
1、石英材料具有很好的耐高温性能，能够保证薄膜沉积过程中的沉积温度。石英管上均匀设有安装槽，用于固定基片并对基片进行布气，保证薄膜沉积过程中腔体内气体分布的均匀性。1. Quartz material has good high temperature resistance, which can ensure the deposition temperature during the film deposition process. The quartz tube is evenly provided with installation grooves, which are used to fix the substrate and distribute gas to the substrate, so as to ensure the uniformity of gas distribution in the chamber during the thin film deposition process.
2、在薄膜的沉积过程中，基片台的进气端支架盘与反应腔体的进气口相连，反应气体通过支架盘进入石英管，由石英管上的安装槽均匀地引入到反应腔体中，保证固定在安装槽中的基片处于相同的气体氛围之中，从而保证每一个基片上生长的薄膜都是一致的，达到大批量沉积薄膜的目的。2. During the deposition process of the film, the support plate at the inlet end of the substrate table is connected to the air inlet of the reaction chamber, and the reaction gas enters the quartz tube through the support plate, and is evenly introduced into the reaction chamber by the installation groove on the quartz tube In the body, ensure that the substrates fixed in the installation groove are in the same gas atmosphere, so as to ensure that the films grown on each substrate are consistent, and achieve the purpose of mass deposition of films.
3、本发明解决了薄膜沉积过程中反应腔体内气体的均匀性问题，能够保证腔体内不同位置的基片都处在相同的气体氛围中，从而保证大批量生产时薄膜性能的一致性，可以进行薄膜的大批量沉积。3. The present invention solves the problem of uniformity of gas in the reaction chamber during film deposition, and can ensure that the substrates at different positions in the chamber are in the same gas atmosphere, thereby ensuring the consistency of film performance during mass production, and can Perform high-volume deposition of thin films.
4、本发明的基片台还可以达到精确定位基片位置的效果，在对腔体中等离子体分布的研究过程中具有很重要的作用。4. The substrate stage of the present invention can also achieve the effect of accurately locating the position of the substrate, which plays a very important role in the research process of the plasma distribution in the cavity.
附图说明Description of drawings
下面将结合附图及实施例对本发明作进一步说明，附图中：The present invention will be further described below in conjunction with accompanying drawing and embodiment, in the accompanying drawing:
图1是本发明适用于管状等离子体薄膜沉积装置中的基片台的结构示意图。FIG. 1 is a schematic structural view of a substrate stage applicable to a tubular plasma thin film deposition device according to the present invention.
具体实施方式Detailed ways
为了对本发明的技术特征、目的和效果有更加清楚的理解，现对照附图详细说明本发明的具体实施方式。In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific implementation manners of the present invention will now be described in detail with reference to the accompanying drawings.
如图1所示，本发明适用于管状等离子体薄膜沉积装置中的基片台包括四根石英管2和固定在石英管2两端的支架盘1。As shown in FIG. 1 , the substrate stage applicable to the tubular plasma thin film deposition device of the present invention includes four
四根石英管2的端部均匀间隔设置在同一圆周上，其中一个支架盘1上设有进气口4，另一个支架盘1封闭，石英管2上均匀设有多个安装基片的安装槽3。石英材料具有很好的耐高温性能，能够保证薄膜沉积过程中的沉积温度。石英管2上均匀设有安装槽3，用于固定基片并对基片进行布气，保证薄膜沉积过程中腔体内气体分布的均匀性。The ends of the four
在薄膜的沉积过程中，基片台的进气端支架盘1与反应腔体的进气口4相连，反应气体通过支架盘1进入石英管2，由石英管2上的安装槽3均匀地引入到反应腔体中，保证固定在安装槽3中的基片处于相同的气体氛围之中，从而保证每一个基片上生长的薄膜都是一致的，达到大批量沉积薄膜的目的。During the deposition process of the film, the support disk 1 at the inlet end of the substrate table is connected to the
进一步的，至少一根石英管2可拆卸安装在支架盘1上，保证有足够的空间放置基片及基片放置后对其进行固定。Further, at least one
进一步的，支架盘1和石英管2采用透电磁波的石英材料制成，能够保证基片台不会影响腔体内的等离子体分布。Further, the support plate 1 and the
本发明解决了薄膜沉积过程中反应腔体内气体的均匀性问题，能够保证腔体内不同位置的基片都处在相同的气体氛围中，从而保证大批量生产时薄膜性能的一致性，可以进行薄膜的大批量沉积。本发明的基片台还可以达到精确定位基片位置的效果，在对腔体中等离子体分布的研究过程中具有很重要的作用。The invention solves the uniformity problem of the gas in the reaction chamber during the thin film deposition process, and can ensure that the substrates at different positions in the chamber are in the same gas atmosphere, thereby ensuring the consistency of the thin film performance during mass production and enabling the thin film mass deposition. The substrate table of the present invention can also achieve the effect of accurately positioning the substrate position, and plays an important role in the research process of plasma distribution in the cavity.
上面结合附图对本发明的实施例进行了描述，但是本发明并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本发明的启示下，在不脱离本发明宗旨和权利要求所保护的范围情况下，还可做出很多形式，这些均属于本发明的保护之内。Embodiments of the present invention have been described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementations, and the above-mentioned specific implementations are only illustrative, rather than restrictive, and those of ordinary skill in the art will Under the enlightenment of the present invention, many forms can also be made without departing from the gist of the present invention and the protection scope of the claims, and these all belong to the protection of the present invention.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020118873A1 (en) * | 2018-12-13 | 2020-06-18 | 深圳市捷佳伟创新能源装备股份有限公司 | Reaction chamber structure of plasma deposition furnace |
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| US5020476A (en) * | 1990-04-17 | 1991-06-04 | Ds Research, Inc. | Distributed source assembly |
| CN1863939A (en) * | 2003-08-21 | 2006-11-15 | 微米技术有限公司 | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
| CN101120116A (en) * | 2005-02-17 | 2008-02-06 | 斯奈克玛动力部件公司 | Method for the densification of thin porous substrates by means of vapour phase chemical infiltration and device for loading such substrates |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5020476A (en) * | 1990-04-17 | 1991-06-04 | Ds Research, Inc. | Distributed source assembly |
| CN1863939A (en) * | 2003-08-21 | 2006-11-15 | 微米技术有限公司 | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
| CN101120116A (en) * | 2005-02-17 | 2008-02-06 | 斯奈克玛动力部件公司 | Method for the densification of thin porous substrates by means of vapour phase chemical infiltration and device for loading such substrates |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020118873A1 (en) * | 2018-12-13 | 2020-06-18 | 深圳市捷佳伟创新能源装备股份有限公司 | Reaction chamber structure of plasma deposition furnace |
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Application publication date: 20140326 |