KR102581325B1 - Batch type atomic layer deposition apparatus - Google Patents

Abstract

The present invention relates to a batch-type atomic layer deposition apparatus for evenly depositing atomic layers on a plurality of substrates by maintaining uniformity of gas flow. The batch-type atomic layer deposition device according to the present invention includes a chamber, a shower head disposed at the top of the chamber, which supplies source gas into the chamber, and a shower head disposed at the bottom of the chamber, forming a vacuum inside the chamber and completing the reaction. It includes a pump that sucks in source gas, a holder that is placed inside the chamber and loaded with at least one substrate that is an atomic layer deposition object, and moves left and right at regular intervals inside the chamber based on the shower head.

Description

Batch type atomic layer deposition apparatus

The present invention relates to a batch-type atomic layer deposition apparatus, and more specifically, to a batch-type atomic layer deposition apparatus for uniformly depositing atomic layers on a plurality of substrates by maintaining uniformity of gas flow.

Atomic layer deposition technology is a type of chemical vapor deposition method to improve performance by depositing thin films in various industries such as semiconductors, displays, and energy devices. It improves thermal, mechanical, and optical performance even when using thin films of materials. It is a highly usable process that can be expected.

In addition, atomic layer deposition technology is a type of chemical vapor deposition method that allows for a lower temperature process than the CVD process. It is easy to control the thickness for each cycle through a self-limiting reaction and can deposit a thin film with a uniform thin film and good shape compatibility. there is.

However, atomic layer deposition technology has difficulties in depositing thin films when the substrate, such as in powder form, moves.

Meanwhile, for mass production using atomic layer deposition technology, atomic layer deposition stations using batch type were researched and developed.

Meanwhile, Korean Patent Publication No. 10-2008-0061948 discloses “batch-type atomic layer deposition equipment.”

The disclosed batch atomic layer deposition equipment includes a process chamber in which atomic layer deposition is performed, a wafer plate installed in the process chamber on which a plurality of wafers are mounted, and a gas supply unit disposed above the center of the wafer plate and providing a reaction gas. Includes.

The batch-type atomic layer deposition equipment disclosed herein can accommodate and deposit a large amount of substrates, but the gas flow is not uniform depending on the position of the shower head, causing a problem in which the atomic layer cannot be deposited evenly on the substrate.

Korean Patent Publication No. 10-2008-0061948 (2008.07.03.)

Therefore, the purpose of the present invention is to provide a batch-type atomic layer deposition apparatus for evenly depositing atomic layers on a plurality of substrates by maintaining uniformity of gas flow.

Another object of the present invention is to provide a batch-type atomic layer deposition apparatus in which the chamber, showerhead, and pump are configured to be separable as a unit structure and can be expanded according to the number of substrates.

The batch-type atomic layer deposition apparatus according to the present invention includes a chamber, a shower head disposed at the top of the chamber, supplying source gas into the chamber, and disposed at the bottom of the chamber to form a vacuum inside the chamber. A pump for sucking in the reaction-complete gas, a holder disposed inside the chamber and loaded with at least one substrate that is an atomic layer deposition object, and moving left and right at regular intervals inside the chamber with respect to the shower head. Do it as

In the batch-type atomic layer deposition apparatus according to the present invention, the chamber is characterized by including a heating portion disposed between the outer side and the inner side.

In the batch-type atomic layer deposition apparatus according to the present invention, the shower head has a plurality of source supply lines supplying source gas, a plurality of branching from each of the plurality of source supply lines, and a plurality of supplying sources to the chamber. Characterized in that it includes a gas line.

In the batch-type atomic layer deposition apparatus according to the present invention, the plurality of gas lines are in communication with each other.

In the batch-type atomic layer deposition apparatus according to the present invention, the plurality of gas lines are arranged to overlap each other.

The batch-type atomic layer deposition apparatus according to the present invention includes a chamber, a shower head disposed at the top of the chamber, supplying source gas into the chamber, and disposed at the bottom of the chamber to form a vacuum inside the chamber. It includes a pump for sucking in a gas in which the reaction has been completed, a holder disposed inside the chamber and on which at least one substrate that is an atomic layer deposition object is loaded, and the shower head is characterized in that it moves left and right at regular intervals based on the holder. do.

A batch-type atomic layer deposition apparatus according to the present invention includes a plurality of unit chambers that are detachably coupled and in communication with each other, and a plurality of unit shower heads that are respectively disposed on top of the plurality of unit chambers and supply source gas to each of the unit chambers. , a pump disposed at the bottom of each of the plurality of unit chambers, forming a vacuum inside the plurality of unit chambers and suctioning a gas in which the reaction has been completed, and at least one pump disposed inside the plurality of unit chambers and being an atomic layer deposition object. A batch type atomic layer deposition apparatus on which a substrate is loaded and which includes a holder that moves left and right at regular intervals within the plurality of unit chambers based on the plurality of unit shower heads.

A batch-type atomic layer deposition apparatus according to the present invention includes a plurality of unit chambers that are detachably coupled and in communication with each other, and a plurality of unit shower heads that are respectively disposed on top of the plurality of unit chambers and supply source gas to each of the unit chambers. , a pump disposed at the bottom of each of the plurality of unit chambers, forming a vacuum inside the plurality of unit chambers and suctioning a gas in which the reaction has been completed, and at least one pump disposed inside the plurality of unit chambers and being an atomic layer deposition object. A holder on which the substrate is loaded; It includes, and the plurality of unit shower heads are characterized in that they move left and right at regular intervals based on the holder.

The batch-type atomic layer deposition device according to the present invention is configured to move the shower head or the holder accommodating the substrate to the left and right at regular intervals, maintaining the uniformity of the gas flow and depositing atomic layers evenly on a plurality of substrates. there is.

In addition, the batch-type atomic layer deposition apparatus according to the present invention is configured so that the chamber, showerhead, and pump can be separated into a unit structure, so that it can be expanded according to the number of substrates.

Through this, the batch-type atomic layer deposition apparatus according to the present invention can set the minimum units of the chamber, showerhead, and pump, and can increase the number of units as needed to ensure expandability of the chamber.

1 is a diagram showing a batch-type atomic layer deposition apparatus according to an embodiment of the present invention.
Figure 2 is a cross-sectional view of a chamber according to an embodiment of the present invention.
Figure 3 is a diagram for explaining the structure of a shower head according to an embodiment of the present invention.
4 and 5 are diagrams for explaining the operation of a batch-type atomic layer deposition apparatus according to an embodiment of the present invention.
Figure 6 is a diagram for explaining the operation of a batch-type atomic layer deposition apparatus according to another embodiment of the present invention.

It should be noted that in the following description, only the parts necessary to understand the embodiments of the present invention will be described, and descriptions of other parts will be omitted without departing from the gist of the present invention.

The terms or words used in the specification and claims described below should not be construed as limited to their usual or dictionary meanings, and the inventor should use the concept of terminology appropriately to explain his/her invention in the best way. It must be interpreted as meaning and concept consistent with the technical idea of the present invention based on the principle that it can be defined clearly. Therefore, the embodiments described in this specification and the configurations shown in the drawings are only preferred embodiments of the present invention, and do not represent the entire technical idea of the present invention, and therefore, various equivalents can be substituted for them at the time of filing the present application. It should be understood that there may be variations.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings.

FIG. 1 is a view showing a batch-type atomic layer deposition apparatus according to an embodiment of the present invention, FIG. 2 is a view showing a cross section of a chamber according to an embodiment of the present invention, and FIG. 3 is a view showing a shower according to an embodiment of the present invention. This is a drawing for explaining the structure of the head, and FIGS. 4 and 5 are drawings for explaining the operation of the batch-type atomic layer deposition apparatus according to an embodiment of the present invention.

1 to 5, the batch-type atomic layer deposition apparatus 100 according to an embodiment of the present invention uses a pump 30 with a holder 40 loaded with a plurality of substrates placed inside the chamber 10. ) to maintain a certain level of vacuum inside the chamber 10. In addition, the batch-type atomic layer deposition apparatus 100 heats the substrates to an appropriate reaction temperature through the chamber 10 and supplies source gas through the shower head 20 to deposit thin films on a plurality of substrates. You can. In addition, the batch type atomic layer deposition apparatus 100 removes excess gas from the source gas provided into the chamber 10 through the pump 30, residual gas remaining without forming a thin film on the substrate, and reaction by-products between the deposition gases, etc. It can be expelled by inhalation.

In particular, the batch-type atomic layer deposition apparatus 100 according to an embodiment of the present invention can be a device for forming a pellicle for extreme ultraviolet rays (EUV) on a substrate.

This batch type atomic layer deposition device 100 may be composed of a plurality of unit atomic layer deposition devices 100a. These plurality of unit atomic layer deposition devices 100a are configured to be attachable to and detachable from each other, and may be expanded according to the number of substrates.

This batch-type atomic layer deposition apparatus 100 includes a chamber 10, a shower head 20, a pump 30, and a holder 40.

The chamber 10 forms a space to accommodate a holder 40 on which a plurality of substrates are mounted. Here, the inside of the chamber 10 is maintained at an appropriate level of vacuum by the pump 30.

Additionally, the chamber 10 includes a heater unit 13 for heating the substrate mounted on the holder 40 to an appropriate reaction temperature.

Here, the heater unit 13 may be provided between the outer surface 11 and the inner surface 12 of the chamber 10, as shown in FIG. 2. At this time, the outer surface 11 and the inner surface 12 of the chamber 10 may be stainless steel. Various types of heat sources such as xenon lamps, halogen lamps, and heat rods can be used as the heater unit 13. In this way, the heater unit 13 is disposed between the outer surface 11 and the inner surface 12 of the chamber 10, so that a plurality of substrates can be heated evenly.

In addition, the chamber 10 has holes for mounting the unit shower heads 20a at regular intervals on the upper surface, and the unit pump 30a is mounted on the lower surface to face the hole for mounting the unit shower heads 20a. A hole may be formed.

Here, the chamber 10 may include a plurality of unit chambers 10a in which a unit shower head 20a and a unit pump 30a are each installed. These plurality of unit chambers 10a may be detachably coupled and communicate with each other. Through this, it can be configured to be expandable according to the size of the holder 40 or the number of substrates mounted on the holder 40.

The shower head 20 is disposed at the top of the chamber 10 and can supply source gas into the chamber. Here, the source gas can be a material for forming a pellicle on the substrate. For example, the material for forming the pellicle may be polysilicon, single crystal silicon, graphite, graphene, carbon nanotubes (CNTs), or silicon carbide. However, it is not limited to this, and various materials can be used to form the pellicle.

This shower head 20 may be composed of a plurality of unit heads 20a. Here, each of the plurality of unit heads 20a may be respectively coupled to the plurality of unit chambers 10a.

Here, the plurality of unit chambers 10a are branched from the plurality of source supply lines 21 and the plurality of source supply lines 21 for supplying the source gas, and the plurality of unit chambers 10a are branched from the plurality of source supply lines 21 to supply the source gas to the chamber 10. It may be configured to include line 22.

At this time, the plurality of gas lines 22 may be configured to communicate with each other, as shown in (a) of FIG. 3. That is, by forming a plurality of gas lines 22 by branching from the plurality of source supply lines 21, even deposition can be achieved in vulnerable areas that are not affected by the gas flow. That is, the problem of reduced gas flow in the gas line 22 where the source supply line 21 is relatively far away can be solved.

Additionally, the plurality of gas lines 22 may be arranged to overlap each other, as shown in (b) of FIG. 3. That is, a plurality of lines are provided where a plurality of gas lines 22 branch from one source supply line 21, and some of the gas lines 22 are arranged to overlap each other, thereby providing a plurality of source supply lines 21. It can suppress flow disruption and enable even deposition on the substrate.

Additionally, the plurality of unit shower heads 20a may be configured to move left and right at regular intervals with respect to the holder 40. That is, as the shower head 20 is composed of a plurality of unit shower heads 20a, the substrate located in the space between the plurality of unit shower heads 20a or the substrate located at both ends of the chamber 10 relatively flows through the gas. Problems may arise where deposition is not performed properly due to lack of contact. Accordingly, the batch-type atomic layer deposition apparatus 100 according to an embodiment of the present invention configures the plurality of unit shower heads 20a to move left and right at regular intervals and at a constant speed, thereby forming a substrate that is relatively untouched by the gas flow. It can be deposited evenly.

The pump 30 can suction air inside the chamber 10 to maintain a certain level of vacuum inside the chamber 10.

Additionally, the pump 30 can suck in and discharge excess gas from the source gas provided into the chamber 10 or by-products of the reaction between the residual gas and deposition gas remaining without forming a thin film on the substrate.

This pump 30 may include a plurality of unit pumps 30a each disposed below the plurality of unit chambers 10a. Here, each of the plurality of unit pumps 30a may be installed to face the unit shower head 20a with the unit chamber 10a interposed therebetween.

The holder 40 is disposed inside the chamber 10 and can be loaded with at least one substrate that is an atomic layer deposition object. This holder 40 can move left and right at regular intervals relative to the shower head 20 inside the chamber 10. Preferably, the holder 40 is disposed on a rail 14 formed on the lower surface of the chamber 10, as shown in FIG. 5, and is configured to be movable at regular intervals along the rail 14 for a certain period of time. It can be. However, it is not limited to this, and a moving line may be formed inside the chamber 10 to move the holder 40 along the line.

Accordingly, as the shower head 20 is composed of a plurality of unit shower heads 20a, the holder 40 is located at both ends of the substrate or chamber 10 located in the space between the plurality of unit shower heads 20a. The substrate is relatively untouched by gas flow, which may cause problems in which deposition is not performed properly. Accordingly, the batch-type atomic layer deposition apparatus 100 according to an embodiment of the present invention configures the plurality of holders 40 to move left and right at regular intervals and at a constant speed, so that evenly It can be deposited.

That is, as shown in (a) of FIG. 4, when the holder 40 moves to the right, the substrate located between the unit shower head 20a and the adjacent unit shower head 20a and at the left end of the holder 40 The thin film can be deposited evenly.

In addition, as shown in (b) of FIG. 4, when the holder 40 moves to the left, the substrate located between the unit shower head 20a and the adjacent unit shower head 20a and at the right end of the holder 40 The thin film can be deposited evenly.

As such, the batch-type atomic layer deposition apparatus 100 according to an embodiment of the present invention is configured to move the shower head 20 or the holder 40 that accommodates the substrate to the left and right at regular intervals, thereby maintaining the uniformity of the gas flow. By maintaining this, atomic layers can be deposited evenly on a plurality of substrates.

In addition, the batch-type atomic layer deposition apparatus 100 according to an embodiment of the present invention is configured so that the chamber 10, the showerhead 20, and the pump 30 can be separated into a unit structure, so that it can be expanded according to the number of substrates. You can.

Through this, the batch-type atomic layer deposition apparatus 100 according to an embodiment of the present invention can set the minimum units of the chamber 10, the showerhead 20, and the pump 30, and increase the number of units as necessary to increase the number of units in the chamber. It can be made to have scalability.

In addition, the batch-type atomic layer deposition device 100 according to an embodiment of the present invention is provided inside the chamber 10 and may further include an analysis device that analyzes the chemical composition in real time in the chamber 10. . Here, the analysis device may include PM-TOF and PPMS. Through this, the batch-type atomic layer deposition apparatus 100 according to an embodiment of the present invention can improve the quality of analysis.

Meanwhile, Figure 5 is a diagram for explaining the operation of a batch-type atomic layer deposition apparatus according to another embodiment of the present invention.

Meanwhile, referring to FIG. 5 , the shower head 120 may be configured to move left and right at regular intervals based on the holder 140. That is, the substrates located at both ends of the chamber 110 are relatively untouched by the gas flow, which may cause a problem in which deposition is not performed properly. Accordingly, the batch-type atomic layer deposition apparatus according to another embodiment of the present invention is configured to move the shower head 120 left and right at regular intervals and at a constant speed, thereby enabling even deposition on a substrate relatively untouched by the gas flow. there is.

Meanwhile, the embodiments disclosed in the specification and drawings are merely provided as specific examples to aid understanding, and are not intended to limit the scope of the present invention. It is obvious to those skilled in the art that in addition to the embodiments disclosed herein, other modifications based on the technical idea of the present invention can be implemented.

10: Chamber 10a: Unit chamber
20: shower head 20a: unit shower head
21: source supply line 22: gas line
30: pump 30a: unit pump
40: Holder 100: Atomic layer deposition device
100a: unit atomic layer deposition device

Claims (11)

A plurality of unit chambers are detachably coupled and communicate with each other in a row;
a plurality of unit shower heads each disposed on top of the plurality of unit chambers to supply source gas to each of the unit chambers;
a plurality of unit pumps respectively disposed at lower portions of the plurality of unit chambers, forming a vacuum inside the plurality of unit chambers and sucking in gas in which the reaction has been completed; and
It includes a holder disposed inside the plurality of unit chambers on which at least one substrate that is an atomic layer deposition object is loaded,
The unit chamber, the unit shower head, and the unit pump constitute a unit atomic layer deposition apparatus, and the plurality of unit atomic layer deposition apparatuses are based on a structure in which the plurality of unit chambers are detachably coupled and communicate with each other in a row. A batch type atomic layer deposition device characterized in that it is configured to be detachable from each other and can be expanded according to the number of substrates. According to paragraph 1,
The unit chamber is,
A batch type atomic layer deposition device comprising a heater unit disposed between the outer surface and the inner surface. According to paragraph 1,
The unit shower head is,
a plurality of source supply lines supplying source gas;
a plurality of gas lines branching from each of the plurality of source supply lines to supply a source to the unit chamber;
A batch type atomic layer deposition device comprising a. According to paragraph 3,
A batch type atomic layer deposition apparatus, characterized in that the plurality of gas lines communicate with each other. According to paragraph 3,
A batch type atomic layer deposition apparatus, wherein the plurality of gas lines are arranged to overlap each other. According to paragraph 1,
An analysis device provided inside the chamber composed of the plurality of unit chambers to analyze the chemical composition in real time in the chamber;
A batch type atomic layer deposition device further comprising: According to clause 6,
A batch type atomic layer deposition device, wherein the analysis device includes PM-TOF and PPMS. According to paragraph 1,
A batch type atomic layer deposition apparatus, characterized in that a line or rail for moving the holder is formed inside a chamber composed of the plurality of unit chambers. According to paragraph 1,
A batch type atomic layer deposition apparatus, wherein the plurality of unit shower heads move left and right at regular intervals based on the holder. According to paragraph 1,
A batch type atomic layer deposition apparatus, wherein the holder moves left and right at regular intervals within the plurality of unit chambers based on the plurality of unit shower heads. delete