CN211112208U - Carrier used in plasma enhanced chemical vapor deposition process - Google Patents

Abstract

The utility model provides a carrier used in a plasma-enhanced chemical vapor deposition process, comprising a hollow support and a rigid slit, wherein the rigid slit is defined by two parallel rectangular plates, and the rigid slit is horizontal placed over the hollow support. The carrier of the present invention is composed of a hollow support supporting a rigid slit, and is placed in the plasma area of the cold end of the CVD furnace. The graphene growth substrate passes through the rigid slit in parallel, and the upper rectangular plate of the rigid slit can be used to Effectively shield the non-carbon deposits generated at the cold end and improve the quality of the graphene film. The graphene growth substrate horizontally passes through the rigid slit, which can prevent the growth substrate from shifting or tilting, and obtain a high-quality graphene film product with uniform surface growth. The carrier has simple structure and convenient operation, is suitable for CVD equipment of different sizes, and solves the problem of poor quality of graphene films caused by substrate pollution in the existing graphene preparation process.

Description

Carriers for Plasma Enhanced Chemical Vapor Deposition Processes

technical field

The utility model relates to the field of graphene preparation, in particular to a carrier for protecting the deposition of cold-end pollutants in a plasma-enhanced chemical vapor deposition process.

Background technique

Graphene is a two-dimensional atomic crystal material with a single atomic layer composed of carbon atoms. It has excellent optoelectronic properties and has broad application prospects in many fields such as materials and energy.

The plasma-enhanced chemical vapor deposition (PECVD) preparation method is a method for preparing graphene by chemical vapor deposition assisted by radio frequency plasma. The reaction system realizes the film-forming reaction under the condition of lower temperature. In the process of preparing graphene by plasma-enhanced chemical vapor deposition, the carbon source gas will crack in the plasma area, and various non-carbon pollutants will be deposited on the surface of the substrate, which will pollute the growth substrate and affect the graphite the quality of the olefin film.

Utility model content

One of the main purposes of the present invention is to use the carrier to protect the cold end contaminants of the plasma enhancement process.

The utility model provides a carrier used in a plasma-enhanced chemical vapor deposition process, comprising a hollow support and a rigid slit, wherein the rigid slit is defined by two parallel rectangular plates, and the rigid slit is horizontal placed over the hollow support.

According to an embodiment of the present invention, the hollow support is a hollow device composed of a bottom with a semicircular cross-section and a horizontal upper surface connecting the two sides of the semicircle, and the curvature of the semicircle is related to the plasma The arc of the inner surface of the quartz tube used in the enhanced chemical vapor deposition process is matched.

According to another embodiment of the present invention, the upper surface of the hollow support is provided with a notch, and the rectangular plate of the rigid slit and adjacent to the upper surface of the hollow support is provided with a position opposite to the notch. A boss that fits with the notch.

According to another embodiment of the present invention, the two rectangular plates defining the rigid slit have the same size, four corners of the two rectangular plates are respectively provided with notches, and the limit screws are accommodated in the notches to secure all the The two rectangular plates are combined to form the rigid slit.

According to another embodiment of the present invention, the limit screw is detachably connected to the rectangular plate.

According to another embodiment of the present invention, the two rectangular plates defining the rigid slit are connected by one or both of bolt connection and snap connection.

According to another embodiment of the present invention, the materials of the hollow support and the rectangular plate are selected from one or both of quartz materials and graphite materials.

According to another embodiment of the present invention, the height of the rigid slit is 1 mm˜10 mm.

The carrier provided by the utility model is composed of a hollow support supporting a rigid slit, and is placed in the plasma area of the cold end of the CVD furnace. The graphene growth substrate passes through the rigid slit in parallel, and the upper rectangular plate of the rigid slit is used. It can effectively shield the non-carbon deposits generated at the cold end and improve the quality of the graphene film. On the other hand, the graphene growth substrate horizontally passes through the rigid slit, which can prevent the growth substrate from shifting or tilting, and obtain a high-quality graphene film product with uniform surface growth. The carrier has a simple structure and convenient operation, is suitable for CVD equipment of different sizes, and solves the problem of poor quality of graphene films caused by substrate contamination in the existing graphene preparation process.

Description of drawings

The above and other features and advantages of the present invention will become more apparent from the detailed description of example embodiments thereof with reference to the accompanying drawings.

FIG. 1 is a schematic diagram of a carrier of the present invention in a quartz tube in a plasma region of a CVD furnace.

FIG. 2 is a side view of the carrier of the present invention.

3 is a schematic cross-sectional view of the hollow support of the carrier of the present invention.

FIG. 4 is a schematic diagram of the rigid slit of the carrier of the present invention and the growth substrate after assembly.

5 is a schematic diagram of the lower rectangular plate of the carrier of the present invention.

FIG. 6 is a top view of the hollow bracket of the carrier of the present invention.

Among them, the reference numerals are described as follows:

1-hollow bracket; 1a-bottom; 1b-upper surface; 2-upper rectangular plate; 3-lower rectangular plate; 4-screw; 5-substrate; 6-boss; 7-notch; 8-rigid slit; 9-Quartz tube

Detailed ways

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments, however, can be embodied in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments conveyed to those skilled in the art. In the drawings, the thickness of regions and layers are exaggerated for clarity. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

It should be noted that the terms up, down, left and right in the present invention are only relative concepts or refer to the normal use state of the product, and should not be regarded as limiting.

As shown in FIG. 1 , the carrier for the protection of the deposition of contaminants at the cold end of the plasma enhanced process provided by the present invention is placed in the plasma area in the quartz tube 9 of the CVD furnace. As shown in FIG. 2 , the carrier includes a hollow support 1 and rigid slits 8 . As shown in FIG. 3 , the hollow support 1 is a hollow device composed of a bottom 1a with a semicircular cross-section and a horizontal upper surface 1b connecting the two sides of the semicircle. The radian of the semicircular bottom 1a of the hollow support 1 matches the radian of the inner surface of the quartz tube 9 used in the plasma enhanced chemical vapor deposition process, and can be suitable for CVD equipment of different sizes. As shown in FIG. 4 , the rigid slit 8 is defined by two rectangular plates arranged in parallel, namely the upper rectangular plate 2 and the lower rectangular plate 3 . The upper rectangular plate 2 and the lower rectangular plate 3 can be connected to form a rigid slit 8 by means of bolt connection, snap connection or the like. FIG. 4 uses bolts as an example to illustrate the manner of forming the rigid slits 8 , but those skilled in the art can understand that the present invention is not limited to this. As shown in Fig. 4, the upper and lower rectangular plates 2, 3 are of the same size, the four corners of the two rectangular plates 2, 3 are respectively provided with notches, and the limit screws 4 are accommodated in the notches to combine the two rectangular plates 2, 3 Rigid slits 8 are formed. The limit screw 4 is detachably connected to the rectangular plates 2,3. The materials of the hollow support 1 and the rectangular plate 2 are selected from quartz materials, graphite materials and other materials suitable for use in the PECVD process. The height of the slit 8 can be determined according to the specific equipment and operation. When the height of the rigid slit 8 is too high, it is limited by the diameter of the CVD furnace, and it is difficult to place it in the circular pipe diameter; when the height of the rigid slit 8 is too high The operation difficulty of the process at low time increases. The height of the rigid slit 8 is preferably 1 mm to 10 mm.

Before the PECVD process, the hollow support 1 is placed in the plasma area of the quartz tube 9 of the CVD furnace and adjusted to keep it level. The rigid slit 8 is then placed over the hollow stent 1 . In order to fix the rigid slit 8 with the hollow bracket 1, as shown in Fig. 5 and Fig. 6, a boss 6 can be provided on the surface of the lower rectangular plate 3 of the rigid slit 8 facing the upper surface 1b of the bracket 1, and correspondingly The upper surface 1b of the hollow bracket 1 is disposed in the matching notch 7 of the boss 6 . Only one example is shown in the figure, and those skilled in the art can reasonably set the number and shape of the bosses 6 and the notches 7 according to actual needs.

Finally, the graphene growth substrate 5 is horizontally passed through the rigid slit 8, and passes through the growth zone to start the preparation of the graphene film. The graphene growth substrate 5 passes through the rigid slit 8 horizontally, which can prevent the growth substrate from shifting or tilting, and obtain a high-quality graphene thin film product with uniform surface growth.

The technical solution of the present invention has been disclosed above by the preferred embodiments. Those skilled in the art should realize that changes and modifications made without departing from the scope and spirit of the present invention disclosed in the appended claims of the present invention are all within the protection scope of the claims of the present invention. Inside.

Claims (8)

1. A carrier for use in a plasma enhanced chemical vapor deposition process, characterized in that it comprises a hollow support and a rigid slit, the rigid slit is defined by two rectangular plates arranged in parallel, and the rigid slit is The slit is placed horizontally above the hollow support. 2 . The carrier according to claim 1 , wherein the hollow support is a hollow device composed of a bottom with a semicircular cross-section and a horizontal upper surface connecting two sides of the semicircle. The arc of the circle matches the arc of the inner surface of the quartz tube used in the plasma enhanced chemical vapor deposition process. 3 . The carrier according to claim 2 , wherein the upper surface of the hollow bracket is provided with a notch, and the rectangular plate of the rigid slit, which is adjacent to the upper surface of the hollow bracket, is in contact with the upper surface of the hollow bracket. 4 . The position opposite to the notch is provided with a boss matched with the notch. 4. The carrier according to claim 2, wherein the two rectangular plates defining the rigid slit have the same size, four corners of the two rectangular plates are respectively provided with notches, and the limit screws are accommodated in the The rigid slit is formed by combining the two rectangular plates in the notch. 5. The carrier according to claim 4, wherein the limit screw is detachably connected to the rectangular plate. 6 . The carrier according to claim 2 , wherein the two rectangular plates defining the rigid slit are connected by one or both of bolt connection and snap connection. 7 . 7 . The carrier according to claim 2 , wherein the materials of the hollow support and the rectangular plate are selected from one or both of quartz and graphite. 8 . 8 . The carrier according to claim 1 , wherein the rigid slit has a height of 1 mm˜10 mm. 9 .

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