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CN101517701B - 衬底形的粒子传感器 - Google Patents

衬底形的粒子传感器 Download PDF

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CN101517701B
CN101517701B CN2007800360927A CN200780036092A CN101517701B CN 101517701 B CN101517701 B CN 101517701B CN 2007800360927 A CN2007800360927 A CN 2007800360927A CN 200780036092 A CN200780036092 A CN 200780036092A CN 101517701 B CN101517701 B CN 101517701B
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丹尼斯·J·伯恩西奥里尼
克雷格·C·拉姆齐
德尔克·H·加德纳
费利克斯·J·舒达
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Abstract

一种衬底形的粒子传感器(100)，包括衬底形的基部部分(102)和设置在衬底形的基部部分(102)上的电子仪器外壳(104)。电源(204)位于电子仪器外壳(104)内部。控制器(208)操作地连接到电源(104)。粒子传感器(214)操作地连接到所述控制器(208)并且提供至少一个存在于所述粒子传感器(214)附近的粒子的指示给所述控制器(208)。

Description

衬底形的粒子传感器
背景技术
半导体加工工业的前沿目前推进到65纳米和45纳米节点的产品。而且，目前对32纳米和22纳米节点的发展正在进行中。因而，将半导体加工工具和过程本身控制到以前从未要求过的容差和条件是日益至关重要的。晶片报废和停修时间的成本持续驱使需要使控制加工和设备达到更紧密的水平，并且当本来在100纳米以上工艺中无关紧要的其他问题出现时，工艺和设备工程师寻求新的和创新的方法来更好地控制半导体加工。
在半导体晶片的制造过程中，有多个工具和加工步骤会暴露到晶片。在每一个这些步骤中，存在由脏的设备和/或不佳的加工条件引起的潜在的缺陷，它们会由于淀积在晶片的表面的微观粒子而降低最终集成电路的产量。因此，保持所有的加工台和步骤尽可能的清洁并能够在将晶片提交处理前监测这些不同的台的状况是至关重要的。这是很重要的，因为每个晶片可能包括几十和甚至好几百个集成电路器件的电路，而单个损坏的晶片可能带来好几百或好几千美元的废料成本。
传统上，晶片通过半导体加工工具测试运行，并且晶片上的粒子在测试运行前后都进行计数。然后，粒子的数量的差值被归因于工具。这是花费时间的过程，并且不能提供任何有关粒子在工具内的什么位置淀积的指示。因此，如果在给定的测试运行晶片上发现太多的粒子，其仅能显示半导体处理工具太脏，而技术人员进一步的工作将是打开工具，确定粒子源，并且给出合适的校正措施。当这个过程完成，晶片必须再次进行测试运行并且重复整个过程直到完全表明半导体处理工具是合适程度的清洁的。
发明内容
本发明提供衬底形粒子传感器，其包括衬底形的基部部分和设置在衬底形基部部分上的电子仪器外壳。电源位于电子仪器外壳内。控制器操作地连接到电源。粒子传感器操作地连接到所述控制器并且提供在所述粒子传感器附近存在至少一个粒子的指示给所述控制器。
附图说明
图1是无线的衬底形传感器的立体图，利用该传感器，根据本发明实施例特别有用；
图2是根据本发明的实施例的无线的衬底形的粒子传感器的方块图；
图3是根据本发明的实施例的无线的衬底形的粒子传感器300的立体图；
图4示出根据本发明的实施例的传感器的俯视图；
图5是本发明的另一实施例的无线的衬底形的粒子传感器的立体图；
图6是关于图5所述的基于MEMS的实施例的概略图。
具体实施方式
本发明的实施例总体提供对存在于半导体处理工具的密封环境内的粒子的实时感测。粒子的感测可以依照多种技术完成。这里提供的一个示例性技术包括光学感测邻近衬底形的无线传感器的粒子。另一实施例包括感测淀积到连接到无线的衬底形传感器的机械结构上的粒子的质量。
图1无线的衬底形传感器的立体图，利用该传感器，根据本发明实施例尤其有用。传感器100包括衬底形部分102，其优选地成形为具有等于标准衬底尺寸的直径。示例性的尺寸包括200毫米直径，或者300毫米直径。然而，随着发展或采用不同的标准，这个尺寸可以改变。传感器100包括电子仪器容器或外壳104，其设置在衬底形部分102上。为了提高整个传感器100的刚度，设置多个鳍状物或支撑件106，这些鳍状物或支撑件连接电子仪器外壳104的侧壁108和衬底形部分102的表面。为了易于通过密封的半导体处理室，期望衬底形传感器102具有即使不相同，也是非常类似于实际衬底的形状因子。普通的晶片尺寸和特征可以在下面的说明书中找到：SEMI M1-0302，“抛光Monochrystoline硅晶片守则(Specification for Polished Monochrystoline Silicon Wafers)”，国际半导体设备和材料，www.semi.org。
图2是根据本发明的实施例的无线的衬底形的粒子传感器的方块图。传感器200包括电子仪器外壳202，它可和外壳104相同。电源204、电源管理模块206和控制器208设置在外壳202内。附加地，存储器210也设置在外壳202内并连接到控制器208。还有，射频模块212设置在外壳202内并且连接到控制器208。
虽然图2中示出的粒子传感器214设置在外壳202内，但是可以形成外壳202的部分，或者粒子传感器设置在外壳202附近，但是在外壳22的外部。
如图2所示，电源204优选地是设置在外壳202内的电池并且通过电源管理模块206连接到控制器208。优选地，电源管理模块206是电源管理集成电路，可以使用线性技术公司(Linear Technology Corporation)的商品名称为LTC3443的产品。控制器208优选微处理器，可以应用德州仪器(Texas Instruments)的商品MSC1211Y5。控制器208连接到存储模块210，其可以使用任何类型的存储器，包括设置在控制器208内的存储器，和设置在控制器208外部的存储器。优选的控制器包括内置静态存储器(SRAM)、快闪随机存取存储器(flash RAM)和自只读存储器(bootROM)。优选地，存储模块210也包括具有大小为64Kx8的外部闪存。闪存对于存储可能需要的诸如程序、校准数据、和/或非改变数据的非易变数据是有益的。内置随机存取存储器对于存储与程序运行相关的易变数据是有益的。
控制器208通过合适的端口(例如串行端口)连接到射频通信模块212，以便与外部设备通信。在一个实施例中，射频模块212依照熟知的蓝牙标准，蓝牙核心说明书译本1.1(2001年2月22)(这可从蓝牙SIG(www.bluethooth.com)上找到)运行。模块212的一个示例可以使用Mitsumi的商品WMLC40。此外，除了模块212外或代替模块212，可以使用其他形式的无线通信。这种无线通信的合适的示例包括任何其他形式的射频通信、声波通信、红外通信或者甚至采用磁感应通信。
控制器208连接到粒子传感器214，所述粒子传感器构造成感测半导体处理工具的密封环境内的一个或多个接近传感器200的粒子。优选地，传感器214不但感测粒子的存在(以便产生粒子计数)，而且能感测单个粒子的特征，例如质量和/或尺寸。虽然下面描述的实施例具体讨论了粒子质量，也可以通过使用多像素图像传感器(例如线传感器，或阵列)和探测多少像素感测到粒子的阴影来感测粒子尺寸。
传感器200也包括可选的电极216，电极216优选地形成静电板，静电板设置成将漂浮在空气中接近传感器200的粒子吸引到粒子传感器214，以更有效地进行感测。可选的电极216执行上述功能的方式的详细内容将在下面所述的特别的实施例中进行描述。
传感器200优选地包括显示器218，其构造成提供粒子计数和/或显示合格/不合格的指示给工艺工程师。此外，为了复位粒子计数，还设置复位按键220，并将其连接到控制器208。
图3是根据本发明的实施例的无线衬底形粒子传感器300的立体图。传感器300具有许多与传感器100和200类似之处，并且相同的部件用相同的附图标记标示。传感器300具有电子仪器外壳104，电子仪器外壳104具有凹进表面302。所有的如图2中示出的那些电子仪器设置在表面302下面的电子仪器外壳104内。在图3中示出的实施例提供用于测量接近传感器300的粒子的光学方法。具体地，粒子传感器214包括设置在表面302中心附近的光源304。光源304可以是LED、激光或任何其他合适的光源。在表面302的外周附近设置至少一个照射传感器306。此外，优选地，在表面302的外周附近包括多个反射镜(如图4所示)。从源304发射的照射基本上在所有方向上传播，并且当没有粒子存在时，在每个传感器306上产生基本上恒定的照射信号。当一个或多个粒子进入源304和探测器306中的一个之间的区域时，探测器306将会记录光强度的变动。这种变动能够随粒子计数递增，或可以以其他合适的方式存储起来。虽然图3显示源304在基本上所有方向上产生照射，但应该清楚地预期，源304可以产生一个或多个方向的束，不管是否包括构造的照射，这些束在最终投射到探测器306上之前可以与一个或多个反射镜相互作用。如此，可以监测与粒子相互作用的接近表面302的较多区域。
图3还示出了可选的电极216，其具有相对大的板的形式。电极216优选地为静电电极，其可以以熟知的方式保持能够吸引粒子的电压。
虽然图3示出的实施例显示了一个或多个照射束或照射射线，它们从静止的源移动到多个静止的传感器，但还应该清楚地预期到一个或多个束是可以扫描的，或以别的方式通过表面302附近，例如通过使用移动的反射镜通过表面附近。更进一步，在图3中示出的实施例中，或者使用扫描束形式的实施例中，束或照射可以垂直地进行准直，但是水平地分开，使得不进行物理扫描也可以增大角度范围。
图4是显示根据本发明实施例的传感器300的俯视图。源304在多个方向310、312、314和316上产生照射。照射312显示为投射到粒子318，粒子以非常夸大的尺寸示出。如图所示，一部分照射被偏离到线320，仅有照射322到达探测器306。探测器306感测瞬时的照射强度的改变并且将一个粒子登记到控制器208。图4还显示了多个反射镜324，它们有助于促进或产生更多的沿接近并基本上平行于表面302的平面的光学路径。
虽然图3和4中示出的实施例所述的照射可以采用任何合适的形式，但是优选所述照射具有相对短的波长，例如蓝光，或甚至是紫外光谱范围，因为长波长照射将更少被极小的粒子散射。因此，短波长照射是优选的，因为加工技术发展到了越来越小的临界尺寸。此外，尽管图3和4所述的基于光学的实施例一般测量从中心源发射的光，但是，可以使用或配置一个或多个传感器使得它们正常情况下看不到来自中心源的光，而是相反看到与粒子相互作用的散射的光。因此，在这种实施例中，当在所述束中没有粒子时，就不会探测到散射的光。相反，当在所述束中存在粒子时，就能探测到散射的光。而且，探测非散射和散射的光的探测器组合可以用来减少错误粒子探测的可能性。
图5是根据本发明另一实施例的无线的衬底形粒子传感器的立体图。传感器400具有一些与传感器100和300的类似之处，并且相同的部件用相同的附图标记标示。传感器400与前面所述的传感器不同之处在于，传感器400通过实质上测量粘附到结构402上的粒子的质量来确定粒子数量。结构402优选地是微机电系统(MEMS)，其包括压电元件，所述压电元件能够激发或驱动结构402以便确定其共振频率。当粒子粘附到结构402，组合的粒子/结构402的质量将会改变，并且因此改变共振频率。为了提高传感器400的效率，还优选，传感器400包括可选的设置在结构402上的静电电极216。如此，漂浮在结构402附近的粒子将会由静电作用力推动粘附到结构402。然后结构402使用来自可选的电极216的静电电荷吸引粒子到其梁上或到结构402的质量验证件(proof of mass)上。虽然优选地电极216可以保持正电荷或负电荷，但是也可以是交替地吸引粒子并且可能地从半导体加工工具上清除粒子。
图6是图5中所述的基于质量的MEMS实施例的简略图。具体地，结构402悬臂结构，其中如图简略示出地所述结构在一端或靠近一端支撑在支撑件406上。402的部分是压电的，或由合适的微机电结构形成，使得通过线路408来自控制器208的电流在结构402内产生移动。分析压电元件的电响应，控制器208能够计算，或观察结构402质量的改变，和/或结构402的共振频率的改变。这是因为，当粒子淀积到结构402上，如图附图标记410所示，关于支撑206的系统的总质量和转动惯量改变。这种改变随之作为不同的共振频率被探测。图6还显示了可选的电极216，设置在结构402的顶部并且吸引粒子410。
本发明的实施例总体上为半导体处理工具提供大体上实时的粒子探测。这种实时反馈可以通过处理工具中的窗口借助于工程师观看显示器218可视地提供给工艺工程师。附加地，或可选地，实时反馈可以通过由射频通信模块212提供的射频信号来提供。
虽然本发明以参考优选实施例的方式进行了描述，本领域技术人员应该认识到，在不脱离本发明的精神和范围的情况下，可以进行形式和具体的修改。

Claims (14)

1.一种衬底形粒子传感器，包括：
衬底形的基部部分；
电子仪器外壳，所述电子仪器外壳设置在所述衬底形的基部部分上；
电源，所述电源设置在所述电子仪器外壳内；
控制器，所述控制器操作地连接到所述电源；和
粒子传感器，所述粒子传感器操作地连接到所述控制器，其中所述粒子传感器采用光源，所述光源产生光束，所述光束被垂直地进行准直，但是水平地分开，使得在不进行物理扫描的情况下增大角度范围。
2.如权利要求1所述的衬底形粒子传感器，其中所述光源是激光光源。
3.如权利要求2所述的衬底形粒子传感器，还包括至少一个反射镜，所述束在沿接近并平行于所述电子仪器外壳的表面的平面的光学路径上与所述反射镜相互作用。
4.如权利要求1所述的衬底形粒子传感器，其中所述光源是发光二极管光源。
5.如权利要求4所述的衬底形粒子传感器，还包括至少一个反射镜，所述束在沿接近并平行于所述电子仪器外壳的表面的平面的光学路径上与所述反射镜相互作用。
6.如权利要求1所述的衬底形粒子传感器，其中所述粒子传感器采用测量积聚的粒子的质量的装置。
7.如权利要求1所述的衬底形粒子传感器，其中所述装置是MEMS装置。
8.如权利要求1所述的衬底形粒子传感器，还包括无线通信模块，所述无线通信模块连接到所述控制器，并构造成当所述衬底形粒子传感器位于晶片处理系统内时通信粒子感测信息。
9.如权利要求1所述的衬底形粒子传感器，其中所述控制器构造成在所述传感器感测的参数的基础上计算晶片处理系统内存在的粒子的数量。
10.如权利要求9所述的衬底形粒子传感器，还包括显示器，所述显示器操作地连接到所述控制器并构造成提供粒子数量的指示。
11.如权利要求1所述的衬底形粒子传感器，还包括显示器，所述显示器操作地连接到所述控制器并构造成提供关于粒子数量的指示。
12.如权利要求1所述的衬底形粒子传感器，还包括复位按键，所述复位按键操作地连接到所述控制器。
13.如权利要求11所述的衬底形粒子传感器，其中所述显示器基于晶片处理系统内探测的粒子的水平来指示合格/不合格。
14.如权利要求1所述的衬底形粒子传感器，其中所述传感器构造成提供粒子尺寸的指示。
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DE112007002309T5 (de) 2009-07-30
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