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ATE430381T1 - Oxidbasiertes verfahren zur herstellung von verbundhalbleiterfilmen und herstellung zugehöriger elektronischer vorrichtungen - Google Patents

Oxidbasiertes verfahren zur herstellung von verbundhalbleiterfilmen und herstellung zugehöriger elektronischer vorrichtungen

Info

Publication number
ATE430381T1
ATE430381T1 AT07112483T AT07112483T ATE430381T1 AT E430381 T1 ATE430381 T1 AT E430381T1 AT 07112483 T AT07112483 T AT 07112483T AT 07112483 T AT07112483 T AT 07112483T AT E430381 T1 ATE430381 T1 AT E430381T1
Authority
AT
Austria
Prior art keywords
group
source material
film
compound
oxide
Prior art date
Application number
AT07112483T
Other languages
English (en)
Inventor
Vijay K Kapur
Bulent M Basol
Craig R Leidholm
Robert A Roe
Original Assignee
Internat Solar Electric Techno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Internat Solar Electric Techno filed Critical Internat Solar Electric Techno
Application granted granted Critical
Publication of ATE430381T1 publication Critical patent/ATE430381T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
AT07112483T 1998-07-02 1999-06-30 Oxidbasiertes verfahren zur herstellung von verbundhalbleiterfilmen und herstellung zugehöriger elektronischer vorrichtungen ATE430381T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/109,814 US6127202A (en) 1998-07-02 1998-07-02 Oxide-based method of making compound semiconductor films and making related electronic devices

Publications (1)

Publication Number Publication Date
ATE430381T1 true ATE430381T1 (de) 2009-05-15

Family

ID=22329702

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07112483T ATE430381T1 (de) 1998-07-02 1999-06-30 Oxidbasiertes verfahren zur herstellung von verbundhalbleiterfilmen und herstellung zugehöriger elektronischer vorrichtungen
AT99112443T ATE370518T1 (de) 1998-07-02 1999-06-30 Verfahren auf oxyd-basis zur herstellung von dünnen schichten von verbindungshalbleitern und von entsprechenden elektronischen vorrichtungen

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT99112443T ATE370518T1 (de) 1998-07-02 1999-06-30 Verfahren auf oxyd-basis zur herstellung von dünnen schichten von verbindungshalbleitern und von entsprechenden elektronischen vorrichtungen

Country Status (7)

Country Link
US (1) US6127202A (de)
EP (2) EP0978882B1 (de)
JP (1) JP4303363B2 (de)
CN (1) CN1214445C (de)
AT (2) ATE430381T1 (de)
DE (2) DE69936825T2 (de)
ES (2) ES2323904T3 (de)

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DE69936825D1 (de) 2007-09-27
JP2000058893A (ja) 2000-02-25
ATE370518T1 (de) 2007-09-15
ES2292216T3 (es) 2008-03-01
EP1870943A2 (de) 2007-12-26
US6127202A (en) 2000-10-03
CN1214445C (zh) 2005-08-10
EP0978882A2 (de) 2000-02-09
EP1870943B1 (de) 2009-04-29
JP4303363B2 (ja) 2009-07-29
DE69936825T2 (de) 2008-05-15
EP0978882B1 (de) 2007-08-15
DE69940837D1 (de) 2009-06-10
EP1870943A3 (de) 2008-03-12
CN1241804A (zh) 2000-01-19

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