WO2016158088A1 - 蛍光光源装置 - Google Patents
蛍光光源装置 Download PDFInfo
- Publication number
- WO2016158088A1 WO2016158088A1 PCT/JP2016/055162 JP2016055162W WO2016158088A1 WO 2016158088 A1 WO2016158088 A1 WO 2016158088A1 JP 2016055162 W JP2016055162 W JP 2016055162W WO 2016158088 A1 WO2016158088 A1 WO 2016158088A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- fluorescent
- fluorescent plate
- light source
- source device
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 192
- 230000005284 excitation Effects 0.000 claims abstract description 48
- 238000007789 sealing Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 27
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 27
- 239000012790 adhesive layer Substances 0.000 claims abstract description 26
- 230000002093 peripheral effect Effects 0.000 claims abstract description 14
- 230000017525 heat dissipation Effects 0.000 claims description 29
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 45
- 230000007547 defect Effects 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 22
- 238000009792 diffusion process Methods 0.000 description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 238000005304 joining Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000000470 constituent Substances 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 230000002265 prevention Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 238000005987 sulfurization reaction Methods 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000012190 activator Substances 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 206010019332 Heat exhaustion Diseases 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- -1 yttria Chemical class 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
- F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
- F21V7/28—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0858—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising a single metallic layer with one or more dielectric layers
Definitions
- the present invention relates to a fluorescent light source device.
- a fluorescent light source device there is known a configuration in which a fluorescent plate is irradiated with laser light as excitation light and fluorescence is emitted from a phosphor constituting the fluorescent plate.
- a certain type of such a fluorescent light source device contains a phosphor that emits fluorescence by excitation light from an excitation light source 11 such as a semiconductor laser, and has a surface (FIG. 3).
- an excitation light source 11 such as a semiconductor laser
- FIG. 3 Upper surface in FIG. 3
- a fluorescent plate 51 whose excitation light incident surface is provided, and a heat dissipation substrate 52 provided on the back surface (lower surface in FIG. 3) of the fluorescent plate 51 (see, for example, Patent Document 1).
- the fluorescent plate 51 has a reflective function on the back surface by providing a reflective layer.
- the reflective layer is preferably made of a metal having high light reflection characteristics, and aluminum (Al), silver (Ag), or the like is used as the metal constituting the reflective layer.
- a bonding member layer 53 made of metal such as solder is interposed between the reflective layer provided on the fluorescent plate 51 and the heat dissipation substrate 52, and the fluorescent plate 51 is placed on the heat dissipation substrate 52 by the bonding member layer 53. It is joined to.
- the reflective layer is weakly adhered, so that the reflective layer is peeled off from the fluorescent plate, and the reflectivity of the reflective layer is deteriorated due to surface degradation due to oxidation and sulfurization. This causes a problem of lowering. Peeling of the reflective layer from the fluorescent plate occurs particularly when silver (Ag) or a silver alloy mainly composed of silver (Ag) is used for the reflective layer.
- the present invention has been made based on the above circumstances, and its purpose is to prevent a decrease in reflectance over a long period of time without causing a problem that the reflective layer is peeled off from the fluorescent plate, and to achieve high luminous efficiency.
- An object of the present invention is to provide a fluorescent light source device capable of obtaining the above.
- the fluorescent light source device of the present invention includes a fluorescent plate made of a phosphor that emits fluorescence by excitation light and a metal oxide, a fluorescent plate whose surface is an excitation light incident surface, a reflective layer disposed on the back side of the fluorescent plate, and heat dissipation
- a fluorescent light source device comprising a substrate, The back surface of the reflective layer and a sealing layer that covers the peripheral side surface are provided in close contact with the periphery of the back surface of the fluorescent plate via an adhesive layer.
- the reflective layer is preferably made of a silver reflective film formed on the back side of the fluorescent plate with a metal oxide multilayer film interposed therebetween.
- the sealing layer covering the back surface and the peripheral side surface of the reflective layer is provided in close contact with the periphery of the back surface of the fluorescent plate made of the phosphor and the metal oxide via the adhesive layer.
- a sealing structure for the reflective layer is formed.
- the reflective layer can be brought into close contact with the fluorescent plate on the back side of the fluorescent plate via another constituent layer provided as necessary.
- the reflective layer is not exposed to an environmental atmosphere such as the air, it is possible to prevent a decrease in the reflectance of the reflective layer due to surface degradation due to oxidation and sulfurization. Therefore, according to the fluorescent light source device of the present invention, it is possible to obtain a high luminous efficiency by preventing a decrease in reflectance over a long period of time without causing a problem that the reflective layer is peeled off from the fluorescent plate.
- FIG. 2 is an explanatory exploded view showing a specific configuration of a fluorescent light emitting member and a heat dissipation board in the fluorescent light source device of FIG. 1. It is explanatory drawing which shows the outline of an example of a structure of the conventional fluorescence light source device.
- FIG. 4 is an explanatory plan view showing a fluorescent plate and a heat dissipation substrate in the fluorescent light source device of FIG. 3.
- FIG. 1 is an explanatory diagram showing an outline of an example of the configuration of the fluorescent light source device of the present invention
- the fluorescent light source device 10 includes an excitation light source 11 made of, for example, a semiconductor laser, and a fluorescent plate 21 containing a phosphor that is excited by excitation light emitted from the excitation light source 11 and emits fluorescence.
- the fluorescent light emitting member 20 is provided, and these are disposed apart from each other.
- the fluorescent light source device 10 is provided with a heat dissipation substrate 22.
- the fluorescent light emitting member 20 is disposed in a posture inclined with respect to the optical axis of the excitation light source 11 so as to face the excitation light source 11.
- the surface of the flat fluorescent plate 21 (the upper surface in FIGS. 1 and 2) is an excitation light incident surface and a fluorescence emission surface.
- the fluorescent light emitting member 20 has a surface of the flat heat dissipation substrate 22 (upper surface in FIGS. 1 and 2) and a back surface of the fluorescent plate 21 (lower surface in FIGS. 1 and 2) opposed to the surface of the heat dissipation plate 22. It is arranged and joined in a state.
- a flat joint member layer 26 is formed between the heat dissipation substrate 22 and the fluorescent light emitting member 20. That is, the fluorescent light emitting member 20 and the heat dissipation substrate 22 are joined by the joining member layer 26. Further, the fluorescent light emitting member 20 is disposed so that the surface of the fluorescent plate 21 faces the excitation light source 11.
- the fluorescent plate 21 is a plate-like body made of a phosphor and a metal oxide, specifically, a sintered body of a mixture of the phosphor and the metal oxide, and a portion made of metal oxide particles (hereinafter, A plate-like body in which a portion made of phosphor particles (hereinafter also referred to as “phosphor portion”) is mixed and a metal oxide portion is exposed on the surface. is there.
- the phosphor plate 21 is made of a phosphor and a metal oxide, that is, the metal oxide portion and the phosphor portion are mixed, and the metal oxide portion is exposed on the surface, so that the phosphor plate 21 is in contact with the phosphor plate 21.
- High adhesion can be obtained between the constituent members of the fluorescent light emitting member 20 stacked in a state (in the example of this figure, a reflective laminate 30 and an adhesive layer 38 to be described later).
- the fluorescent plate 21 is made of a phosphor and a metal oxide, since the excitation light and fluorescence guided to the inside of the fluorescent plate 21 are controlled, the light emitting region on the fluorescent emission surface is reduced. The light emission brightness is improved by decreasing.
- the traveling direction of the excitation light that is incident on a certain phosphor portion but is not absorbed is changed at the interface between the phosphor portion and the metal oxide portion.
- a part of the excitation light that has entered the certain phosphor portion but has not been absorbed travels toward the other phosphor portion. Therefore, the optical path length for converting the excitation light into fluorescence becomes longer, and the probability that the excitation light is absorbed by the phosphor portion increases.
- the excitation light incident on the inside of the fluorescent plate 21 can be effectively used and converted into fluorescence with high efficiency.
- the traveling direction of the fluorescence emitted from a certain phosphor portion is changed at the interface between the other phosphor portion and the metal oxide portion, it is suppressed that the fluorescence is confined inside the phosphor plate 21. .
- the fluorescence generated inside the fluorescent plate 21 can be effectively used and emitted to the outside with high efficiency.
- the phosphor plate 21 In the fluorescent plate 21, a polycrystalline phosphor is used as the phosphor. Since the phosphor constituting the phosphor plate 21 is a polycrystalline phosphor, the phosphor plate 21 has high thermal conductivity. For this reason, in the fluorescent plate 21, the heat generated by the irradiation of the excitation light is efficiently exhausted, so that the fluorescent plate 21 is suppressed from becoming a high temperature. As a result, in the fluorescent light emitting member 20, it is possible to suppress a reduction in the amount of fluorescent light due to the occurrence of temperature quenching in the phosphor.
- the polycrystalline phosphor constituting the fluorescent plate 21 can be obtained, for example, as follows.
- raw materials such as a base material, an activator, a metal oxide, and a firing aid are pulverized by a ball mill or the like to obtain submicron raw material fine particles.
- a molded body is formed and sintered by, for example, a slip casting method.
- a polycrystalline phosphor having a porosity of 0.5% or less, for example, is obtained by subjecting the obtained sintered body to hot isostatic pressing.
- the phosphor constituting the fluorescent plate 21 is preferably made of an inorganic phosphor, specifically, a complex oxide doped with rare earth elements as luminescent ions (activator).
- the phosphor content is, for example, 20 to 80% by mass.
- the particle diameter (average particle diameter) of the phosphor particles is, for example, 1 to 10 ⁇ m.
- aluminum oxide (Al 2 O 3 ) or the like is used as the metal oxide from the viewpoint of exhaust heat (thermal conductivity) and adhesion to the phosphor.
- the fluorescent plate 21 having such a structure is manufactured by, for example, mixing phosphor particles having an appropriate particle diameter and aluminum oxide (Al 2 O 3 ) particles, pressing the mixture, and firing the mixture. can do.
- Specific examples of the material of the fluorescent plate 21 include Al 2 O 3 / YAG: Ce, Al 2 O 3 / YAG: Pr, Al 2 O 3 / YAG: Sm, and Al 2 O 3 / LuAG: Ce. .
- the doping amount of the rare earth element (activator) is about 0.5 mol%.
- the thickness of the fluorescent plate 21 is preferably 0.05 to 2.0 mm from the viewpoint of conversion efficiency of excitation light to fluorescence (quantum yield) and exhaust heat.
- the fluorescent plate 21 may contain at least a light scatterer that diffuses excitation light and may have a light diffusion function of diffusing excitation light.
- the fluorescent plate 21 has a light diffusion function of diffusing excitation light and fluorescence. Since the fluorescent plate 21 has a light diffusion function, the traveling direction of the excitation light is changed by the light scatterer inside the fluorescent plate 21. Therefore, the optical path length for converting the excitation light into fluorescence becomes longer, and the probability that the excitation light is absorbed by the phosphor portion increases. As a result, the excitation light incident on the inside of the fluorescent plate 21 can be effectively used and converted into fluorescence with high efficiency.
- the fluorescent plate 21 has a function of diffusing fluorescence
- the fluorescent traveling direction is changed by the light scatterer inside the fluorescent plate 21, so that the fluorescent light is confined inside the fluorescent plate 21. Is suppressed.
- the fluorescence generated inside the fluorescent plate 21 can be effectively used and emitted to the outside with high efficiency.
- the thickness of the fluorescent plate 21 can be reduced without causing the adverse effect of reducing the conversion efficiency (quantum yield) of excitation light into fluorescence. Can do.
- the fluorescent plate 21 has a very high heat exhaust property, and it is possible to sufficiently suppress or prevent the fluorescence from being emitted from the outer peripheral surface of the fluorescent plate 21 to the outside. Can do.
- the light scatterer contained in the fluorescent plate 21 is composed of aluminum oxide (Al 2 O 3 ) constituting the metal oxide portion of the fluorescent plate 21 or fine particles having a refractive index different from that of the fluorescent material or a grain boundary precipitation phase.
- Al 2 O 3 aluminum oxide
- fine particles constituting the light scatterer include those made of inorganic compounds such as yttria, silicon nitride, aluminum nitride, and strontium fluoride.
- solder containing tin used as the bonding member include, for example, a gold-tin alloy (AuSn, tin (Sn) content 20 mass%, thermal conductivity 250 W / mk) and a tin-silver-copper alloy (Sn).
- AuSn, tin (Sn) content 20 mass%
- tin-silver-copper alloy Sn
- -3Ag-0.5Cu silica content
- copper (Cu) content is 0.5 mass%
- tin (Sn) content is 96.5 mass%)
- thermal conductivity The rate is 55 W / mk).
- gold-tin alloys are preferred because of their high thermal conductivity and low tin content.
- the thermal conductivity is high, so that the excitation power of the excitation light is higher than when a tin-silver-copper alloy is used as the joining member.
- the temperature of the fluorescent screen 21 can be lowered by about 20 degrees.
- the thickness of the joining member layer 26 is, for example, 30 ⁇ m.
- a method of joining the fluorescent light emitting member 20 and the heat radiating substrate 22 by the joining member for example, a reflow furnace is used, and a flux-free solder sheet (joining member) is used between the fluorescent light emitting member 20 and the heat radiating substrate 22.
- a reflow method in which heating is performed in an atmosphere of formic acid gas or hydrogen gas is used.
- the heat radiating substrate 22 exhausts heat generated in the fluorescent light emitting member 20 (specifically, the fluorescent plate 21).
- the heat dissipation substrate 22 is preferably made of a material having high thermal conductivity and a small difference in thermal expansion coefficient from the fluorescent plate 21. Specifically, the thermal expansion coefficient of the constituent material of the heat dissipation substrate 22 is equal to or greater than the thermal expansion coefficient of the constituent material of the fluorescent screen 21, and the difference in thermal expansion coefficient is 9 ⁇ 10 ⁇ 6 [1 / K] or less. Is preferred.
- the operating temperature of the fluorescent plate 21 is set to 150 ° C. or lower.
- the bonding temperature by the bonding member specifically, the solder containing tin
- the bonding member (specifically, the solder containing tin) between the fluorescent light emitting member 20 and the heat dissipation substrate 22 becomes about 100 ° C. Therefore, during the operation of the fluorescent light source device 10, a compressive stress is generated in the fluorescent plate 21, so that no peeling due to thermal expansion occurs between the fluorescent plate 21 and the heat dissipation substrate 22.
- the heat dissipation substrate 22 As a constituent material of the heat dissipation substrate 22, metals such as copper (Cu) and an alloy of molybdenum and copper (Mo—Cu) are used.
- the thermal expansion coefficient of copper used as a constituent material of the heat dissipation substrate 22 is 16.5 ⁇ 10 ⁇ 6 [1 / K], and an alloy of molybdenum and copper (copper (Cu) content ratio 30 mass%) ) Is 8.6 ⁇ 10 ⁇ 6 [1 / K].
- the thermal expansion coefficient of YAG used as the constituent material of the fluorescent screen 21 is 8.6 ⁇ 10 ⁇ 6 [1 / K].
- the heat dissipation substrate 22 is made of copper.
- the thickness of the heat dissipation substrate 22 may be determined as appropriate in consideration of heat dissipation characteristics, and is, for example, 0.5 to 5.0 mm. Further, as shown in FIGS. 1 and 2, the area of the surface of the heat dissipation substrate 22 is preferably larger than the area of the back surface of the fluorescent plate 21 from the viewpoint of heat exhaustion. Further, the heat dissipation board 22 may have a function of a heat dissipation fin. In the example of this figure, the thickness of the heat dissipation substrate 22 is 2 mm.
- the heat radiating substrate 22 has a protective film layer 23 and solder on the surface (the upper surface in FIG. 2) of the heat radiating substrate 22 from the viewpoint of bondability with the bonding member layer 26.
- a metal film in which the wet film layer 24 is laminated in this order is preferably formed.
- the protective film layer 23 is made of, for example, a nickel (Ni) film formed by a watt bath plating method
- the solder wet film layer 24 is made of, for example, gold (Au) formed by a watt bath plating method. It consists of a film.
- the heat radiating substrate 22 is formed by covering the entire outer surface (front surface, back surface and peripheral side surface) with a metal film composed of the protective film layer 23 and the solder wetting film layer 24.
- the thickness of each layer constituting the metal film is 2.5 ⁇ m for the protective film layer 23 and 0.03 ⁇ m for the solder wetting film layer 24.
- a flat reflective layer 31 made of a silver reflective film is provided so as to extend along the back surface of the fluorescent plate 21, specifically, between the fluorescent plate 21 and the heat dissipation substrate 22. That is, the reflective layer 31 is disposed opposite to the back surface of the fluorescent plate 21. As described above, the fluorescent plate 21 is provided with the reflective layer 31 made of silver having high reflection characteristics on the back surface side, thereby having a high reflection function on the back surface.
- the reflective layer 31 has a thickness of 110 to 350 nm, for example. Moreover, it is preferable that the area of the surface (upper surface in FIG. 1 and FIG. 2) of the reflection layer 31 is below the area of the back surface of the fluorescent plate 21 from a viewpoint of effective utilization of excitation light and fluorescence. In the example of this figure, the surface of the reflective layer 31 has a size slightly smaller than the size of the back surface of the fluorescent plate 21, and the entire surface faces the central portion of the back surface of the fluorescent plate 21.
- an increased reflection portion 32 made of a metal oxide multilayer film is provided in close contact with the back surface of the fluorescent plate 21. That is, the back surface of the fluorescent plate 21 is provided with the increased reflection portion 32 and the reflection layer 31 in this order.
- the back surface of the fluorescent plate 21 has a more excellent high reflection function.
- the metal oxide multilayer film constituting the increased reflection portion 32 has a silicon dioxide (SiO 2 ) layer 32A and a titanium oxide (TiO 2 ) layer 32B.
- the thickness of the metal oxide multilayer film constituting the increased reflection portion 32 is 350 nm.
- the reflective laminate 30 including the silicon dioxide layer 32A and the titanium oxide layer 32B constituting the increased reflection portion 32 is produced by an electron beam evaporation method. Specifically, a laminated film (reflective laminated body 30) is formed on the back surface of the fluorescent plate 21 on which a resist patterned by exposure is disposed by electron beam evaporation. After that, the resist is removed by lift-off. The entire surface (upper surface in FIG. 2) of the increased reflection portion 32 is in contact with the central portion of the back surface of the fluorescent plate 21.
- an adhesive improvement layer 35A is provided on the surface of the reflective layer 31 so as to cover the entire surface in a state of being in close contact with the surface.
- an adhesive improvement layer 35B is provided on the back surface (lower surface in FIG. 2) of the reflective layer 31 so as to cover the entire surface in a state of being in close contact with the back surface.
- the reflective laminate 30 includes a reflective layer 31, adhesive improvement layers 35A and 35B, and an increased reflection portion 32.
- the adhesion improving layers 35A and 35B are made of aluminum oxide (Al 2 O 3 ).
- the adhesive improvement layers 35A and 35B have a thickness of 1 ⁇ m or less.
- the thickness of the adhesive improvement layers 35A and 35B exceeds 1 ⁇ m, the adhesive improvement layers 35A and 35B have low thermal conductivity, and the temperature of the fluorescent plate 21 during operation of the fluorescent light source device 10 increases. For this reason, a sufficient amount of fluorescent light cannot be obtained due to the occurrence of temperature quenching in the phosphor.
- the thickness of the adhesion improving layer 35A is 50 nm
- the thickness of the adhesion improving layer 35B is 50 nm.
- the adhesion improving layers 35A and 35B can be produced by, for example, an electron beam evaporation method.
- the reflective laminate 30 is provided with a sealing layer 37 so as to cover the back surface and the peripheral side surface of the reflective layer 31.
- the sealing layer 37 is bonded to the reflective laminate 30 and the fluorescent plate 21 between the reflective laminate 30 and the sealing layer 37 and between the periphery of the back surface of the fluorescent plate 21 and the sealing layer 37.
- the adhesive layer 38 is provided. That is, the adhesive layer 38 is provided in close contact with the peripheral side surface of the reflective layer 31, the back surface and peripheral side surface of the lower surface side adhesive improvement layer 35B, the peripheral edge of the back surface of the fluorescent plate 21, and the sealing layer 37. Yes.
- the sealing layer 37 is provided in close contact with the reflective laminate 30 via the adhesive layer 38 on the back surface of the fluorescent plate 21, and the sealing layer 37, the adhesive layer 38, and the fluorescent plate 21 A sealing structure of the reflective laminate 30 is formed.
- the sealing layer 37 and the adhesive layer 38 are provided so as to cover the entire reflective laminate 30, and are applied to the entire peripheral side surface of the metal oxide multilayer film constituting the increased reflection portion 32.
- the adhesive layer 38 is in close contact with each other.
- a stress relaxation layer 41 and a gold layer 43 made of a multilayer film having titanium (Ti) layers 41A and 41B and platinum (Pt) layers 42A and 42B, Are provided in this order.
- the thickness of the titanium layer 41A in contact with the sealing layer 37 is 50 nm
- the thickness of the platinum layer 42A in contact with the titanium layer 41A is 150 nm
- the titanium layer 41B in contact with the platinum layer 42A has a thickness of 100 nm
- the platinum layer 42B in contact with the titanium layer 41B has a thickness of 200 nm.
- the gold layer 43 has a thickness of 500 nm.
- the titanium layers 41A and 41B, the platinum layers 42A and 42B, and the gold layer 43 constituting the stress relaxation layer 41 are each produced by a sputter deposition method.
- the thermal expansion coefficient of titanium (8.5 ⁇ 10 ⁇ 6 [1 / K]) and the thermal expansion coefficient of platinum (8.9 ⁇ 10 ⁇ 6 [1 / K]) is close to the thermal expansion coefficient (8.6 ⁇ 10 ⁇ 6 [1 / K]) of YAG used as the constituent material of the fluorescent plate 21,
- the generated stress can be relaxed.
- the platinum layers 42 ⁇ / b> A and 42 ⁇ / b> B exhibit a function of preventing diffusion of a metal (specifically, for example, tin) constituting the bonding member layer 26. That is, the platinum layers 42A and 42B function as a diffusion prevention layer together with the diffusion prevention layer 45 described later.
- the sealing layer 31 is not peeled off from the fluorescent plate 21, and the reflective layer 31 has a high reflective function over a long period of time. More specifically, the sealing layer 37 is provided via the adhesive layer 38 on the fluorescent plate 21 from which the metal oxide (specifically, aluminum oxide (Al 2 O 3 )) is exposed.
- the adhesiveness between the adhesive layer 38 and the fluorescent plate 21 is stronger than the adhesiveness between the fluorescent plate 21 and the reflective laminate 30 (specifically, the silicon dioxide layer 32A of the increased reflection portion 32). Therefore, sufficient adhesion is obtained between the peripheral edge of the back surface of the fluorescent plate 21 and the sealing layer 37 (adhesive layer 38).
- the sealing structure of the reflective laminate 30 since the sealing structure of the reflective laminate 30 is formed, peeling of the constituent layers in the reflective laminate 30 is prevented, and the reflective laminate 30 is in an operating environment atmosphere when the fluorescent light source device 10 is operated. Therefore, the fluorescent light emitting member 20 has excellent weather resistance and moisture resistance. As a result, peeling of the reflective layer 31 from the fluorescent plate 21 and surface deterioration due to oxidation and sulfuration of the reflective layer 31 can be prevented.
- the adhesiveness between the fluorescent plate 21 and the adhesive layer 38 is strong, even if the diffusion prevention layer 45 having a thickness of 1 to 4 ⁇ m is formed on the back surface side of the sealing layer 37, the reflective layer 31 may be peeled off. The structure does not occur.
- the reflective laminate 30 is Exposed to the manufacturing environment atmosphere in the manufacturing process of the fluorescent light source device 10 such as the formation process of the fluorescent light emitting member 20 after the sealing structure of the reflective laminate 30 is formed and the joining process of the fluorescent light emitting member 20 and the heat dissipation substrate 22. Can be prevented. Therefore, in the fluorescent light source device 10, the reflective laminate 30 has an intended reflection function.
- the sealing layer 37 is made of nickel or indium, and is preferably made of nickel from the viewpoint of weather resistance.
- the sealing layer 37 has a thickness of 0.5 ⁇ m or less, for example.
- the sealing layer 37 is formed by a sputter deposition method or the like. In the example of this figure, the sealing layer 37 is made of nickel, and the thickness of the sealing layer 37 is 110 nm.
- the adhesive layer 38 is made of chromium, a chromium alloy, titanium, or the like.
- the sealing layer 37 is made of nickel, it is made of chromium from the viewpoint of adhesion to the sealing layer 37. It is preferable.
- the adhesive layer 38 has a thickness of 50 nm, for example, between the reflective laminate 30 and the sealing layer 37 and between the fluorescent plate 21 and the sealing layer 37. Further, the adhesive layer 38 is formed by a sputter deposition method or the like. In the example of this figure, the adhesive layer 38 is made of chromium.
- the region where the adhesive layer 38 is in close contact with the back surface of the fluorescent plate 21, that is, the peripheral edge of the back surface of the fluorescent plate 21, is provided with the adhesive layer 38 made of metal in close contact, thereby having a reflective function. That is, the back surface of the fluorescent plate 21 has a high reflection function at the center and a reflection function at the periphery. This reduces the absorption of fluorescence at the periphery of the back surface of the fluorescent plate 21. Therefore, in the fluorescent light emitting member 20, the fluorescence generated on the fluorescent plate 21 can be taken out efficiently.
- the adhesive layer 38 uses at least one of titanium, silicon, tantalum, aluminum, and oxides thereof instead of chromium. May have been.
- the fluorescent light emitting member 20 is provided with a diffusion preventing layer 45 on the back side of the sealing layer 37, specifically, between the sealing layer 37 and the bonding member layer 26.
- the diffusion preventing layer 45 has a thickness of 1 ⁇ m or more from the viewpoint of the diffusion preventing function.
- the thickness of the diffusion preventing layer 45 is preferably 4 ⁇ m or less from the viewpoint of preventing the reflection layer 31 from peeling off.
- a solder wetting film layer 46 made of gold is provided between the diffusion preventing layer 45 and the bonding member layer 26.
- the operating temperature of the fluorescent light emitting member 20 is 200 to 250 ° C. (the junction temperature is 150 to 200 ° C.). Even in this case, the fluorescent light emitting member in which the metal (specifically, for example, tin) constituting the bonding member layer 26 is laminated on the surface of the diffusion prevention layer 45 (the upper surface in FIGS. 1 and 2). It is possible to prevent diffusion to the 20 constituent members.
- the fluorescent light source device 10 has a driving condition in which the temperature of the back surface of the fluorescent plate 21 is high (specifically, 100 to 200 ° C.), specifically, the excitation density of excitation light to the fluorescent plate 21 is 20 This becomes conspicuous when driven under driving conditions of up to 200 W / mm 2 or more.
- the diffusion preventing layer 45 is made of copper (Cu), palladium (Pd), platinum (Pt), or nickel (Ni), and preferably made of nickel.
- the diffusion prevention layer 45 is preferably formed by a plating method using a highly soluble plating bath from the viewpoint of reducing the stress applied to the reflection layer 31 from the diffusion prevention layer 45 and preventing the reflection layer 31 from peeling off. It is particularly preferable to form by plating using a sulfamic acid bath.
- the excitation light emitted from the excitation light source 11 is irradiated on the surface (excitation light incident surface) of the fluorescent plate 21 and is incident on the fluorescent plate 21.
- the fluorescent substance which comprises the said fluorescent plate 21 is excited.
- fluorescence is emitted from the phosphor in the fluorescent plate 21.
- the fluorescence is emitted from the surface (fluorescence emission surface) of the fluorescent plate 21 to the outside together with the excitation light reflected by the reflective layer 31 on the back surface of the fluorescent plate 21 without being absorbed by the phosphor, and is emitted to the outside of the fluorescent light source device 10.
- the sealing structure of the reflective laminate 30 is formed by the fluorescent plate 21, the sealing layer 37, and the adhesive layer 38. Therefore, the reflective layer 31 is in close contact with the fluorescent plate 21 via the adhesion improving layer 35 ⁇ / b> A and the increased reflection portion 32 on the back side of the fluorescent plate 21.
- the reflective laminate 30 since the reflective laminate 30 is not exposed to an environmental atmosphere such as the atmosphere, the reflectance layer 31 has a temporal decrease in reflectance due to the surface degradation of the reflective layer 31 due to oxidation and sulfurization. Can be prevented. Therefore, according to the fluorescent light source device 10, the reflection layer 31 is prevented from being peeled off from the fluorescent plate 21, and the reflectance is prevented from lowering for a long period of time, and high luminous efficiency can be obtained.
- the sealing layer 37 is made of nickel and the adhesive layer 38 is made of chromium, so that the sealing layer 37 has excellent weather resistance.
- the sealing layer 37 is tightly adhered to the fluorescent plate 21 and the reflective laminate 30 by the action of the adhesive layer 38, the sealing structure of the reflective laminate 30 has a higher sealing property. . Therefore, the reflection layer 31 is further prevented from being lowered in reflectance due to peeling from the fluorescent plate 21 and surface degradation due to oxidation and sulfurization. As a result, in the fluorescent light source device 10, high luminous efficiency can be obtained over a longer period.
- the reflective layer 31 is made of a silver reflective film formed on the back side of the fluorescent plate 21 through the increased reflection portion 32 made of a metal oxide multilayer film, thereby allowing silver reflection. Due to the high reflection characteristics of the film and the reflectance improvement characteristics of the increased reflection portion 32, the back surface of the fluorescent screen 21 has a more excellent high reflection function.
- an adhesion improving layer 35A made of aluminum oxide (Al 2 O 3 ) is interposed between the reflective layer 31 and the increased reflection portion 32, it is between the reflection layer 31 and the increased reflection portion 32. High adhesion can be obtained.
- the reflective layer 31 made of the silver reflective film has low adhesion and is easily oxidized and sulfided, since the sealing structure of the reflective laminate 30 is formed, the fluorescent layer 21 in the reflective layer 31 is formed. The reflectance does not decrease due to peeling from the surface and surface deterioration due to oxidation and sulfurization. Therefore, in the fluorescent light source device 10 in which the reflective layer 31 made of the silver reflective film is formed on the back side of the fluorescent plate 21 through the metal oxide multilayer film, higher luminous efficiency can be obtained over a long period of time.
- the fluorescent plate may have a periodic structure in which a plurality of convex portions are periodically arranged on the surface of the fluorescent plate.
- the periodic structure on the surface of the fluorescent plate is, for example, a two-dimensional periodic arrangement in which convex portions having a substantially cone shape (specifically, a cone shape or a frustum shape) are densely packed.
- the fluorescent plate has a periodic structure on the surface, the fluorescent plate is composed of a fluorescent member and a periodic structure layer having optical transparency to excitation light and fluorescence from the viewpoint of ease of manufacture. It may be.
- the overall structure of the fluorescent light source device is not limited to that shown in FIG. 1, and various configurations can be employed.
- the light of one excitation light source for example, a semiconductor laser
- a condensing lens is arranged in front of the fluorescent light emitting member.
- the form which irradiates light light to a fluorescence light-emitting member may be sufficient.
- the excitation light is not limited to light from a semiconductor laser, but may be one that collects light from an LED as long as it can excite the phosphor in the fluorescent plate, and further contains mercury, xenon, or the like. It may be light from a lamp that has been made.
- the wavelength of the excitation light is the main emission wavelength region.
- the present invention is not limited to this.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
Description
このような蛍光光源装置の或る種のものは、図3および図4に示すように、半導体レーザなどの励起光源11からの励起光によって蛍光を放射する蛍光体を含有し、表面(図3における上面)が励起光入射面とされた蛍光板51と、当該蛍光板51の裏面(図3における下面)側に設けられた放熱基板52とを備えている(例えば、特許文献1参照)。この蛍光光源装置において、蛍光板51は、反射層が設けられることなどによって裏面が反射機能を有するものとされている。この反射層は、高い光反射特性を有する金属からなるものであることが好ましく、反射層を構成する金属としては、アルミニウム(Al)、銀(Ag)等が用いられる。そして、蛍光板51に設けられた反射層と放熱基板52との間には、例えば半田等の金属からなる接合部材層53が介在しており、当該接合部材層53によって蛍光板51が放熱基板52上に接合されている。
反射層の蛍光板からの剥離は、特に反射層に銀(Ag)、または、銀(Ag)を主体とする銀合金を用いた場合に発生する。
前記反射層の裏面、および、周側面を覆う封止層が、接着層を介して、前記蛍光板の裏面の周縁に密着して設けられていることを特徴とする。
従って、本発明の蛍光光源装置によれば、反射層が蛍光板から剥離するという不具合が生じることなく、長期間にわたって反射率の低下が防止され高い発光効率を得ることができる。
図1は、本発明の蛍光光源装置の構成の一例の概略を示す説明図であり、図2は、図1の蛍光光源装置における蛍光発光部材および放熱基板の具体的な構成を示す説明用分解図である。
この蛍光光源装置10は、図1に示すように、例えば半導体レーザよりなる励起光源11と、励起光源11から出射される励起光によって励起されて蛍光を放射する蛍光体を含有する蛍光板21を有する蛍光発光部材20とを備え、これらが互いに離間して配設されたものである。また、蛍光光源装置10には、放熱基板22が設けられている。
この図の例において、蛍光発光部材20は、励起光源11に対向するよう、当該励起光源11の光軸に対して傾斜した姿勢で配置されている。
この蛍光発光部材20は、平板状の放熱基板22の表面(図1および図2における上面)に、蛍光板21の裏面(図1および図2における下面)が、当該放熱板22の表面に対向した状態で配置されて接合されたものである。そして、放熱基板22と蛍光発光部材20との間には、平板状の接合部材層26が形成されている。すなわち、蛍光発光部材20と放熱基板22とは、接合部材層26によって接合されている。
また、蛍光発光部材20は、蛍光板21の表面が、励起光源11に対向するように配置されている。
また、蛍光板21が蛍光体と金属酸化物とからなるものであることによれば、蛍光板21の内部に入射した励起光および蛍光の導光が制御されることから、蛍光出射面における発光領域が小さくなり発光輝度が向上する。また、蛍光板21の内部において、或る蛍光体部分に入射したものの吸収されることのなかった励起光の進行方向が当該蛍光体部分と金属酸化物部分との界面において変更される。そして、その或る蛍光体部分に入射したものの吸収されることのなかった励起光の一部は、他の蛍光体部分に向かって進行する。そのため、励起光を蛍光に変換するための光路長が長くなり、励起光が蛍光体部分に吸収される確率が高くなる。その結果、蛍光板21の内部に入射した励起光を有効に利用して、高い効率で蛍光に変換することができる。また、或る蛍光体部分から放射された蛍光の進行方向が他の蛍光体部分と金属酸化物部分との界面において変更されることから、蛍光が蛍光板21の内部に閉じ込められることが抑制される。その結果、蛍光発光部材20においては、蛍光板21の内部において生じた蛍光を有効に利用して、高い効率で外部に出射することができる。
蛍光板21を構成する蛍光体が多結晶の蛍光体であることにより、蛍光板21が高い熱伝導性を有するものとなる。そのため、蛍光板21においては励起光の照射によって発生した熱が効率よく排熱されることから、蛍光板21が高温となることが抑制される。その結果、蛍光発光部材20においては、蛍光体において温度消光が生じることに起因する蛍光光量の低減を抑制することができる。
ここに、蛍光板21を構成する多結晶の蛍光体は、例えば以下のようにして得ることができる。先ず、母材、賦活材、金属酸化物および焼成助剤などの原材料をボールミルなどによって粉砕処理することによって、サブミクロン以下の原材料微粒子を得る。次いで、この原材料微粒子を用い、例えばスリップキャスト法によって成形体を形成して焼結する。その後、得られた焼結体に対して熱間等方圧加圧加工を施すことによって、気孔率が例えば0.5%以下の多結晶の蛍光体が得られる。
また、蛍光体の粒子の粒径(平均粒径)は、例えば1~10μmである。
蛍光板21の材質の具体例としては、Al2 O3 /YAG:Ce、Al2 O3 /YAG:Pr、Al2 O3 /YAG:Sm、およびAl2 O3 /LuAG:Ceなどが挙げられる。このような蛍光板21の蛍光体において、希土類元素(賦活材)のドープ量は、0.5mol%程度である。
蛍光板21が光拡散機能を有するものであることにより、蛍光板21の内部において、励起光の進行方向が光散乱体によって変更される。そのため、励起光を蛍光に変換するための光路長が長くなり、励起光が蛍光体部分に吸収される確率が高くなる。その結果、蛍光板21の内部に入射した励起光を有効に利用して、高い効率で蛍光に変換することができる。
また、蛍光板21が蛍光を拡散する機能を有するものである場合には、蛍光板21の内部において、蛍光の進行方向が光散乱体によって変更されることから、蛍光が蛍光板21の内部に閉じ込められることが抑制される。その結果、蛍光発光部材20においては、蛍光板21の内部において生じた蛍光を有効に利用して、高い効率で外部に出射することができる。
しかも、蛍光板21が光拡散機能を有するものであることによれば、励起光の蛍光への変換効率(量子収率)が小さくなるという弊害を生じさせることなく、蛍光板21の厚みを小さくすることができる。そして、蛍光板21の厚みを小さくすることによれば、当該蛍光板21が極めて高い排熱性を有するものとなり、また蛍光板21の外周面から蛍光が外部に出射されることを十分に抑制または防止することができる。
接合部材として用いられるスズを含有する半田の具体例としては、例えば金スズ合金(AuSn,スズ(Sn)の含有割合20質量%,熱伝導率250W/mk)およびスズ-銀-銅合金(Sn-3Ag-0.5Cu(銀(Ag)の含有割合が3質量%,銅(Cu)の含有割合が0.5質量%,スズ(Sn)の含有割合が96.5質量%),熱伝導率55W/mk)などが挙げられる。これらのうちでは、熱伝導率が高く、スズの含有量が少ないため、金スズ合金が好ましい。具体的に説明すると、接合部材として金スズ合金を用いた場合には、熱伝導率が高いことから、接合部材としてスズ-銀-銅合金を用いた場合に比して、励起光の励起パワーが同一であっても、蛍光板21の温度を20deg程低くすることができる。また、スズの含有割合が少ないことから、反射層31の反射率の低下を抑制することができる。
また、接合部材層26の厚みは、例えば30μmである。
この図の例において、接合部材による蛍光発光部材20と放熱基板22との接合方法としては、例えばリフロー炉を用い、フラックスフリー半田シート(接合部材)を、蛍光発光部材20と放熱基板22との間に挟み、蟻酸ガスまたは水素ガスの雰囲気中において加熱を行うリフロー方式が用いられている。このように、蟻酸または水素の還元力を利用してフラックスフリー半田シートの表面酸化膜を除去してリフローを行う接合方法によれば、形成される接合部材層26にボイドが生じることがなく、良好な熱伝導性が得られる。
この放熱基板22は、高熱伝導性を有すると共に、蛍光板21との熱膨張係数の差が小さい材料よりなるものであることが好ましい。
具体的には、放熱基板22の構成材料の熱膨張係数は蛍光板21の構成材料の熱膨張係数以上であり、その熱膨張係数の差は9×10-6〔1/K〕以下であることが好ましい。
放熱基板22の構成材料と蛍光板21の構成材料との熱膨張係数の差が9×10-6〔1/K〕以下であることによれば、蛍光板21の動作時温度を150℃以下に設定することにより、蛍光光源装置10の製造工程において、蛍光発光部材20と放熱基板22との接合部材(具体的には、スズを含有する半田)による接合温度が100℃程度となる。そのため、蛍光光源装置10の動作時においては、蛍光板21に圧縮応力が発生した状態となることから、蛍光板21と放熱基板22との間に、熱膨張に起因する剥離が生じることがない。
ここに、放熱基板22の構成材料として用いられる銅の熱膨張係数は16.5×10-6〔1/K〕であり、モリブデンと銅との合金(銅(Cu)の含有割合30質量%)の熱膨張係数は8.6×10-6〔1/K〕である。一方、蛍光板21の構成材料として用いられるYAGの熱膨張係数は8.6×10-6〔1/K〕である。
図の例において、放熱基板22は、銅よりなるものである。
また、放熱基板22の表面の面積は、図1および図2に示されているように、排熱性などの観点から、蛍光板21の裏面の面積よりも大きいことが好ましい。
また、放熱基板22は、放熱フィンの機能を兼ね備えたものであってもよい。
この図の例において、放熱基板22の厚みは2mmである。
この金属膜において、保護膜層23は、例えばワット浴によるめっき法によって形成されたニッケル(Ni)膜よりなり、半田濡れ膜層24は、例えばワット浴によるめっき法によって形成された金(Au)膜よりなる。
この図の例において、放熱基板22は、外表面全面(表面、裏面および周側面)が、保護膜層23および半田濡れ膜層24よりなる金属膜で覆われてなるものである。この金属膜を構成する各層の厚みは、保護膜層23が2.5μm、半田濡れ膜層24が0.03μmである。
また、反射層31の表面(図1および図2における上面)の面積は、励起光および蛍光の有効利用性の観点から、蛍光板21の裏面の面積以下であることが好ましい。
この図の例において、反射層31の表面は、蛍光板21の裏面の寸法よりも僅かに小さな寸法を有しており、その全面が蛍光板21の裏面の中央部に対向している。
金属酸化物多層膜よりなる増反射部32が設けられていることにより、蛍光板21の裏面がより一層優れた高反射機能を有するものとなる。
この図の例において、増反射部32を構成する金属酸化物多層膜は、二酸化ケイ素(SiO2 )層32Aと酸化チタン(TiO2 )層32Bとを有するものである。ここに、増反射部32を構成する金属酸化物多層膜の厚みは、350nmである。この増反射部32を構成する二酸化ケイ素層32Aおよび酸化チタン層32Bを含む反射積層体30は、電子ビーム蒸着法によって作製される。具体的には、露光によってパターニングしたレジストが配設された蛍光板21の裏面上に、電子ビーム蒸着法によって積層膜(反射積層体30)を成膜する。その後、レジストをリフトオフによって取り除き作製されたものである。また、増反射部32の表面(図2における上面)は、その全面が蛍光板21の裏面の中央部に対向接触している。
反射層31の表裏面の各々に接着性改善層35A,35Bが設けられていることにより、反射層31と、当該接着性改善層35A,35Bを介して反射層31に積層される蛍光発光部材20の構成部材との間に高い密着性が得られる。
この図の例において、接着性改善層35Aの上面(図2における上面)には、増反射部32が密着した状態で配設されている。すなわち、接着性改善層35Aと蛍光板21との間においては、増反射部32が、接着性改善層35Aおよび蛍光板21の各々に密着した状態とされている。そして、反射積層体30は、反射層31と接着性改善層35A,35Bと増反射部32とによって構成されている。
接着性改善層35A,35Bの厚みが1μmを超える場合には、接着性改善層35A,35Bが熱伝導性の低いものとなり、蛍光光源装置10の動作時における蛍光板21の温度が高くなる。そのため、蛍光体において温度消光が生じることに起因して十分な蛍光光量を得ることができなくなる。
この図の例において、接着性改善層35Aの厚みは50nmであり、接着性改善層35Bの厚みは50nmである。
また、反射積層体30と封止層37との間、および蛍光板21の裏面の周縁と封止層37との間には、封止層37を、反射積層体30および蛍光板21に接着するための接着層38が設けられている。すなわち、接着層38は、反射層31の周側面と、下面側接着性改善層35Bにおける裏面および周側面と、蛍光板21の裏面の周縁と、封止層37とに密着した状態で設けられている。
このようにして、蛍光板21の裏面において、封止層37が接着層38を介して反射積層体30に密着して設けられており、この封止層37と接着層38と蛍光板21とにより、反射積層体30の封止構造が形成されている。
この図の例において、封止層37と接着層38とは、反射積層体30の全体を覆うように設けられており、増反射部32を構成する金属酸化物多層膜の周側面の全面には接着層38が密着した状態とされている。
また、封止層37の裏面(図2における下面)には、チタン(Ti)層41A,41Bと白金(Pt)層42A,42Bとを有する多層膜よりなる応力緩和層41と金層43とがこの順に設けられている。ここに、封止層37に接触しているチタン層41Aの厚みは50nmであり、そのチタン層41Aに接触している白金層42Aの厚みは150nmである。また、白金層42Aに接触しているチタン層41Bの厚みは100nmであり、そのチタン層41Bに接触している白金層42Bの厚みは200nmである。また、金層43の厚みは500nmである。この応力緩和層41を構成するチタン層41A,41Bおよび白金層42A,42B、並びに金層43は、各々、スパッタ蒸着法によって作製されたものである。このような多層膜によって応力緩和層41が構成されていることによれば、チタンの熱膨張係数(8.5×10-6〔1/K〕)および白金の熱膨張係数(8.9×10-6〔1/K〕)が、蛍光板21の構成材料として用いられるYAGの熱膨張係数(8.6×10-6〔1/K〕)に近似しているため、封止層37で発生する応力緩和が可能となる。また、白金層42A,42Bは、接合部材層26を構成する金属(具体的には、例えばスズ)の拡散防止機能を発揮する。すなわち、白金層42A,42Bは、後述する拡散防止層45と共に拡散防止層としても機能する。
具体的に説明すると、封止層37が、金属酸化物(具体的には、酸化アルミニウム(Al2 O3 ))が露出している蛍光板21に接着層38を介して設けられていることから、当該接着層38と蛍光板21との接着性が、蛍光板21と反射積層体30(具体的には、増反射部32の二酸化ケイ素層32A)との接着性よりも強固となる。そのため、蛍光板21の裏面の周縁と封止層37(接着層38)との間に十分な密着性が得られる。
そして、反射積層体30の封止構造が形成されていることにより、反射積層体30における構成層の剥がれが防止され、また、蛍光光源装置10の動作時において、反射積層体30が動作環境雰囲気にさらされることを防止できることから、蛍光発光部材20が優れた耐候性および耐湿性を有するものとなる。その結果、反射層31の蛍光板21からの剥離、並びに反射層31の酸化および硫化による表面劣化を防止することができる。
しかも、蛍光板21と接着層38との接着性が強固であるため、封止層37の裏面側に厚みが1~4μmの拡散防止層45を形成したとしても、反射層31の剥れ等が発生しない構造となる。
また、反射積層体30の封止構造が形成されていることによれば、反射積層体30が、
反射積層体30の封止構造が形成された後の蛍光発光部材20の形成過程、および蛍光発光部材20と放熱基板22との接合過程などの蛍光光源装置10の製造工程における製造環境雰囲気にさらされることを防止できる。そのため、蛍光光源装置10において、反射積層体30が所期の反射機能を有するものとなる。
また、封止層37は、その厚みが、例えば0.5μm以下とされる。
この封止層37は、スパッタ蒸着法などによって形成される。
この図の例において、封止層37は、ニッケルからなるものであり、当該封止層37の厚みは110nmである。
この接着層38は、反射積層体30と封止層37との間および蛍光板21と封止層37との間の各々において、例えば50nmの厚みを有するものである。
また、接着層38は、スパッタ蒸着法などによって形成される。
この図の例において、接着層38は、クロムよりなるものである。また、蛍光板21の裏面における接着層38が密着した領域、すなわち蛍光板21の裏面の周縁は、金属よりなる接着層38が密着して設けられることにより、反射機能を有するものとされている。すなわち、蛍光板21の裏面は、中央部が高反射機能を有し、周縁が反射機能を有するものとされている。このことによって、蛍光板21の裏面の周縁における蛍光の吸収が少なくなる。そのため、蛍光発光部材20においては、蛍光板21で発生した蛍光を効率よく取り出すことができる。
尚、本実施例では、接着層38にクロムを用いたい場合について説明したが、接着層38は、クロムに代えてチタン、シリコン、タンタル、アルミニウム、および、それらの酸化物の少なくとも一つを用いたものであってもよい。
この拡散防止層45は、拡散防止機能の観点から、1μm以上の厚みを有するものとされる。また、拡散防止層45の厚みは、反射層31の剥離防止の観点から、4μm以下であることが好ましい。
この図の例において、拡散防止層45と接合部材層26との間には、金よりなる半田濡れ膜層46が設けられている。
従って、蛍光光源装置10によれば、反射層31が蛍光板21から剥離するという不具合が生じることなく、長期間にわたって反射率の低下が防止され高い発光効率を得ることができる。
しかも、銀反射膜よりなる反射層31は、密着性が弱く、酸化および硫化されやすいものであるものの、反射積層体30の封止構造が形成されていることから、反射層31において、蛍光板21からの剥離並びに酸化および硫化などによる表面劣化に起因する反射率の低下が生じることがない。
従って、銀反射膜よりなる反射層31が金属酸化物多層膜を介して蛍光板21の裏面側に形成された蛍光光源装置10においては、長期間にわたってより一層高い発光効率が得られる。
例えば、蛍光板は、当該蛍光板の表面に、複数の凸部が周期的に配列されてなる周期構造が形成されたものであってもよい。ここに、蛍光板の表面の周期構造は、例えば略錐形状(具体的には、錐状または錐台状)の凸部が密集した状態で二次元周期的に配列されてなるものである。また、蛍光板が表面に周期構造を有するものである場合には、その蛍光板は、製造容易性の観点から、蛍光部材と、励起光および蛍光に対する光透過性を有する周期構造体層とからなるものであってもよい。
11 励起光源
20 蛍光発光部材
21 蛍光板
22 放熱基板
23 保護膜層
24 半田濡れ膜層
26 接合部材層
30 反射積層体
31 反射層
32 増反射部
32A 二酸化ケイ素層
32B 酸化チタン層
35A,35B 接着性改善層
37 封止層
38 接着層
41 応力緩和層
41A,41B チタン層
42A,42B 白金層
43 金層
45 拡散防止層
46 半田濡れ膜層
51 蛍光板
52 放熱基板
53 接合部材層
Claims (2)
- 励起光により蛍光を発する蛍光体と金属酸化物とからなる、表面が励起光入射面とされた蛍光板と、当該蛍光板の裏面側に配置された反射層と、放熱基板とを具備した蛍光光源装置において、
前記反射層の裏面、および、周側面を覆う封止層が、接着層を介して、前記蛍光板の裏面の周縁に密着して設けられていることを特徴とする蛍光光源装置。 - 前記反射層は、金属酸化物多層膜を介して前記蛍光板の裏面側に形成された銀反射膜よりなることを特徴とする請求項1に記載の蛍光光源装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/561,550 US10203071B2 (en) | 2015-03-31 | 2016-02-23 | Reflection type fluorescence light source apparatus |
CN201680015707.7A CN107407479B (zh) | 2015-03-31 | 2016-02-23 | 荧光光源装置 |
KR1020177029899A KR101809430B1 (ko) | 2015-03-31 | 2016-02-23 | 형광 광원 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-071276 | 2015-03-31 | ||
JP2015071276A JP6094617B2 (ja) | 2015-03-31 | 2015-03-31 | 蛍光光源装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016158088A1 true WO2016158088A1 (ja) | 2016-10-06 |
Family
ID=57006992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/055162 WO2016158088A1 (ja) | 2015-03-31 | 2016-02-23 | 蛍光光源装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10203071B2 (ja) |
JP (1) | JP6094617B2 (ja) |
KR (1) | KR101809430B1 (ja) |
CN (1) | CN107407479B (ja) |
WO (1) | WO2016158088A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109388006A (zh) * | 2017-08-03 | 2019-02-26 | 精工爱普生株式会社 | 波长转换元件、光源装置及投影仪 |
WO2019075939A1 (zh) * | 2017-10-18 | 2019-04-25 | 深圳光峰科技股份有限公司 | 波长转换装置及其制备方法 |
CN110073143A (zh) * | 2016-12-28 | 2019-07-30 | 优志旺电机株式会社 | 荧光光源装置及其制造方法 |
US20220037852A1 (en) * | 2018-09-13 | 2022-02-03 | Suzhou Lekin Semiconductor Co., Ltd. | Surface emitting laser device and surface emitting laser apparatus having the same |
US11267223B2 (en) * | 2017-12-28 | 2022-03-08 | Ushio Denki Kabushiki Kaisha | Fluorescent plate |
JP7498054B2 (ja) | 2020-07-31 | 2024-06-11 | 日本特殊陶業株式会社 | 波長変換部材、波長変換装置、および、光源装置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6361995B2 (ja) * | 2017-01-20 | 2018-07-25 | ウシオ電機株式会社 | 発光素子、蛍光光源装置 |
US10859899B2 (en) | 2017-08-03 | 2020-12-08 | Seiko Epson Corporation | Wavelength conversion element, method for producing wavelength conversion element, light source device, and projector |
JP7224579B2 (ja) * | 2018-02-09 | 2023-02-20 | 株式会社タムラ製作所 | 波長変換部材 |
JP7178074B2 (ja) * | 2018-03-20 | 2022-11-25 | 国立研究開発法人物質・材料研究機構 | 波長変換部材及び波長変換素子、並びに波長変換部材の製造方法 |
JP2019164258A (ja) * | 2018-03-20 | 2019-09-26 | セイコーエプソン株式会社 | 波長変換素子、波長変換素子の製造方法、光源装置及びプロジェクター |
JP6943984B2 (ja) * | 2018-06-18 | 2021-10-06 | 日本特殊陶業株式会社 | 光波長変換装置及び発光装置 |
JP7312829B2 (ja) * | 2019-07-16 | 2023-07-21 | 日本特殊陶業株式会社 | 半田付け用波長変換部材、波長変換装置、および、光源装置 |
JP7295778B2 (ja) * | 2019-10-31 | 2023-06-21 | 日本特殊陶業株式会社 | 波長変換部材、および、波長変換装置 |
TWI854471B (zh) * | 2022-10-28 | 2024-09-01 | 台達電子工業股份有限公司 | 光波長轉換結構 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014065051A1 (ja) * | 2012-10-26 | 2014-05-01 | ウシオ電機株式会社 | 蛍光光源装置 |
JP2014179231A (ja) * | 2013-03-14 | 2014-09-25 | Toshiba Lighting & Technology Corp | 光源装置及び照明装置 |
JP2014192127A (ja) * | 2013-03-28 | 2014-10-06 | Ushio Inc | 蛍光光源装置 |
JP2014194895A (ja) * | 2013-03-29 | 2014-10-09 | Ushio Inc | 蛍光光源装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4685245B2 (ja) | 2001-01-09 | 2011-05-18 | 電気化学工業株式会社 | 回路基板及びその製造方法 |
JP2003279654A (ja) * | 2002-03-26 | 2003-10-02 | Canon Inc | 蛍光板 |
US7015640B2 (en) * | 2002-09-11 | 2006-03-21 | General Electric Company | Diffusion barrier coatings having graded compositions and devices incorporating the same |
US7375349B2 (en) * | 2003-11-19 | 2008-05-20 | Fujifilm Corporation | Radiation-image conversion panel and process of producing the same |
JP5530165B2 (ja) | 2009-12-17 | 2014-06-25 | スタンレー電気株式会社 | 光源装置および照明装置 |
US20130334956A1 (en) * | 2010-05-05 | 2013-12-19 | Next Lighting Coro. | Remote phosphor tape lighting units |
JP5741811B2 (ja) * | 2011-02-23 | 2015-07-01 | 三菱マテリアル株式会社 | 発光素子向け増反射透明膜用組成物、発光素子、および発光素子の製造方法 |
JP5741810B2 (ja) * | 2011-02-23 | 2015-07-01 | 三菱マテリアル株式会社 | 発光素子向け反射膜用組成物、発光素子、および発光素子の製造方法 |
US8587019B2 (en) | 2011-10-11 | 2013-11-19 | Ledengin, Inc. | Grooved plate for improved solder bonding |
US20130255870A1 (en) * | 2012-03-30 | 2013-10-03 | Sunpower Corporation | Combined edge sealing and edge protection of multi-layered reflectors |
CN104968995B (zh) * | 2013-02-08 | 2017-03-08 | 优志旺电机株式会社 | 荧光光源装置 |
JP2015050124A (ja) | 2013-09-03 | 2015-03-16 | スタンレー電気株式会社 | 発光装置 |
JP2014060164A (ja) | 2013-10-28 | 2014-04-03 | Sharp Corp | 発光装置、および照明装置 |
-
2015
- 2015-03-31 JP JP2015071276A patent/JP6094617B2/ja active Active
-
2016
- 2016-02-23 CN CN201680015707.7A patent/CN107407479B/zh active Active
- 2016-02-23 WO PCT/JP2016/055162 patent/WO2016158088A1/ja active Application Filing
- 2016-02-23 KR KR1020177029899A patent/KR101809430B1/ko active Active
- 2016-02-23 US US15/561,550 patent/US10203071B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014065051A1 (ja) * | 2012-10-26 | 2014-05-01 | ウシオ電機株式会社 | 蛍光光源装置 |
JP2014179231A (ja) * | 2013-03-14 | 2014-09-25 | Toshiba Lighting & Technology Corp | 光源装置及び照明装置 |
JP2014192127A (ja) * | 2013-03-28 | 2014-10-06 | Ushio Inc | 蛍光光源装置 |
JP2014194895A (ja) * | 2013-03-29 | 2014-10-09 | Ushio Inc | 蛍光光源装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110073143A (zh) * | 2016-12-28 | 2019-07-30 | 优志旺电机株式会社 | 荧光光源装置及其制造方法 |
CN109388006A (zh) * | 2017-08-03 | 2019-02-26 | 精工爱普生株式会社 | 波长转换元件、光源装置及投影仪 |
CN109388006B (zh) * | 2017-08-03 | 2021-07-20 | 精工爱普生株式会社 | 波长转换元件、光源装置及投影仪 |
WO2019075939A1 (zh) * | 2017-10-18 | 2019-04-25 | 深圳光峰科技股份有限公司 | 波长转换装置及其制备方法 |
CN109681846A (zh) * | 2017-10-18 | 2019-04-26 | 深圳光峰科技股份有限公司 | 波长转换装置及其制备方法 |
CN109681846B (zh) * | 2017-10-18 | 2021-01-05 | 深圳光峰科技股份有限公司 | 波长转换装置及其制备方法 |
US11267223B2 (en) * | 2017-12-28 | 2022-03-08 | Ushio Denki Kabushiki Kaisha | Fluorescent plate |
US20220037852A1 (en) * | 2018-09-13 | 2022-02-03 | Suzhou Lekin Semiconductor Co., Ltd. | Surface emitting laser device and surface emitting laser apparatus having the same |
US12003075B2 (en) * | 2018-09-13 | 2024-06-04 | Suzhou Lekin Semiconductor Co., Ltd. | Surface emitting laser device and surface emitting laser apparatus having the same |
JP7498054B2 (ja) | 2020-07-31 | 2024-06-11 | 日本特殊陶業株式会社 | 波長変換部材、波長変換装置、および、光源装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20170123342A (ko) | 2017-11-07 |
US10203071B2 (en) | 2019-02-12 |
US20180080615A1 (en) | 2018-03-22 |
JP2016192295A (ja) | 2016-11-10 |
CN107407479A (zh) | 2017-11-28 |
JP6094617B2 (ja) | 2017-03-15 |
KR101809430B1 (ko) | 2017-12-14 |
CN107407479B (zh) | 2018-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6094617B2 (ja) | 蛍光光源装置 | |
JP6020637B1 (ja) | 蛍光光源装置 | |
JP6179516B2 (ja) | 波長変換装置 | |
JP6365656B2 (ja) | 蛍光光源装置およびその製造方法 | |
JP6845372B2 (ja) | 光波長変換装置 | |
WO2020015363A1 (zh) | 波长转换装置 | |
CN107407475B (zh) | 荧光光源装置 | |
CN108692204B (zh) | 荧光光源装置 | |
WO2017064951A1 (ja) | 光源装置 | |
JP7244297B2 (ja) | 光波長変換部品 | |
JP6888546B2 (ja) | 蛍光プレート | |
JP7535780B2 (ja) | 発光デバイスおよび光源デバイス | |
JP6632108B1 (ja) | 蛍光体素子、その製造方法および照明装置 | |
JP7307616B2 (ja) | 波長変換部材 | |
JP5602916B2 (ja) | 半導体発光素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16771972 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15561550 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20177029899 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16771972 Country of ref document: EP Kind code of ref document: A1 |