TWI792000B - 氣體感測器和感測氣相分析物之方法 - Google Patents
氣體感測器和感測氣相分析物之方法 Download PDFInfo
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- TWI792000B TWI792000B TW109119441A TW109119441A TWI792000B TW I792000 B TWI792000 B TW I792000B TW 109119441 A TW109119441 A TW 109119441A TW 109119441 A TW109119441 A TW 109119441A TW I792000 B TWI792000 B TW I792000B
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- gas
- gas sensor
- polymer
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- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
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- G—PHYSICS
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- G01N31/00—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods
- G01N31/22—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using chemical indicators
- G01N31/223—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using chemical indicators for investigating presence of specific gases or aerosols
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
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Abstract
提供了氣體感測器。該氣體感測器包括:基底;該基底上的多個電極;以及用於吸附氣相分析物的該基底上的聚合物感測層。該分析物的吸附有效地改變該氣體感測器的性質,從而導致來自該氣體感測器之輸出信號發生變化。該聚合物感測層包含選自取代的或未取代的聚伸芳基化物之聚合物,該聚合物包括單體的反應產物,或該反應產物的固化產物,該單體包括包含芳族乙炔基團之第一單體和包含兩個或更多個環戊二烯酮基團之第二單體。該氣體感測器以及使用此類感測器之方法尤其可用於氣相有機分析物之感測。
Description
本發明總體關於用於感測氣相分析物之氣體感測器。更具體而言,本發明關於包括聚合物感測層之氣體感測器,並且關於使用此類感測器來感測分析物之方法。氣體感測器和感測方法尤其可用於氣相分析物諸如有機氣相分析物的感測。
氣相分析物的檢測對於工業和消費市場行業的各種應用皆為重要的。氣體感測器已被例如用於有毒和可燃氣體以及蒸氣(統稱為氣體)的檢測、用於真空沈積過程中對塗層厚度測量的監測和控制以及用於濕度監測。最近,對氣體感測器的關注已擴展到消費電子市場,例如行動電話、物聯網(IoT)和可穿戴設備應用。
存在許多氣體感測器平台,例如聲波、電容型和電導型(電阻型)氣體感測器。例如,在G. Korotcenkov,Handbook of Gas Sensor Materials: Properties, Advantages and Shortcomings for Applications Volume 1: Conventional Approaches, Integrated Analytical Systems
[氣體感測器材料手冊:針對應用的性質、優點和缺點,第1卷:常規方法,綜合分析系統], 施普林格出版社(Springer)(2013)中描述了此類感測器。
基於聲波或壓電的感測器包括例如體聲波(BAW)感測器,諸如石英晶體微天平(QCM)和薄膜體聲波諧振器(FBAR)感測器和表面聲波(SAW)感測器。此類感測器通常包括壓電層,在該壓電層中以固有的聲波共振頻率產生聲波。壓電材料可以塗覆有可吸附所關注的分析物的感測材料,諸如聚合物、金屬、金屬氧化物、二氧化矽或其他無機複合材料。分析物的感測係由於聲波傳播路徑的特性改變而發生的,該改變會導致波速和共振頻率的變化。這種改變係感測材料的一個或多個性質的變化的函數,該性質例如為質量負荷、黏度、黏彈性、彈性剛度、電導率或介電常數中的一者或多者,其中質量負荷係最典型的。例如,與無分析物的感測層相比,隨著來自被吸附的分析物的質量負荷的增加,波速和共振頻率降低。執行換能過程,借助該換能過程,輸入(例如,共振頻率或波速)藉由壓電效應被轉換為可測量的輸出,該輸出通常為電信號。
電容型感測器根據所測得的兩個電極之間的電容來操作,其中該電極通常呈叉指圖案的形式。電極中的一個或兩個可以塗覆有感測材料,該感測材料作為可吸附所關注的分析物的電介質而發揮作用。這種分析物在感測材料之上或之中的吸附提供裝置電容的變化,這係由感測材料的介電常數或厚度的變化引起的。
電導型(或電阻型)氣體感測器通常採用塗覆有感測材料的叉指電極圖案,其中分析物被感測材料吸附,從而導致裝置的電導率(或電阻)改變。這可以例如作為電流變化來測量,電流變化可以與感測層中的分析物的含量相關聯。
感測材料允許感測材料與所關注的分析物之間發生吸附相互作用係重要的。感測器響應速率受到分析物進入感測器材料的結合和擴散以觸發所期望的換能的限制。因此,對所關注的分析物具有高吸附性的感測材料將是期望的。此外,已經發現,在長期操作過程中,分析物結合可能藉由減少響應信號和/或延長響應時間而導致感測器漂移和感測性能喪失。因此,期望獲得即使在存在高信噪比的情況下,也是隨時間推移而穩定的且具有快速響應(較佳的是接近暫態響應)的氣體感測器。
持續需要改進的感測氣相分析物的氣體感測器和方法,該等體感測器和方法解決與先前技術相關的一個或多個問題。
根據本發明之第一方面,提供了氣體感測器。該氣體感測器包括:基底;該基底上的多個電極;以及用於吸附氣相分析物的該基底上的聚合物感測層。該分析物的吸附有效地改變該氣體感測器的性質,從而導致來自該氣體感測器的輸出信號發生變化。該聚合物感測層包含選自取代的或未取代的聚伸芳基化物的聚合物,該聚合物包括單體的反應產物,或該反應產物的固化產物,該單體包括包含芳族乙炔基團之第一單體和包含兩個或更多個環戊二烯酮基團之第二單體。
根據本發明之另一個方面,提供了感測氣相分析物之方法。該方法包括:(a) 提供如本文所述之氣體感測器;以及 (b) 使該聚合物感測層暴露於包含氣相分析物之氣氛中。該氣體感測器以及使用此類感測器之方法尤其可用於氣相分析物諸如有機氣相分析物的感測。
本發明之氣體感測器包括基底、基底上的多個電極以及用於吸附氣相分析物的基底上的聚合物感測層。氣相分析物的吸附有效地改變氣體感測器的性質,從而導致來自氣體感測器的輸出信號發生變化。例如,就聲波感測器(諸如體聲波(BAW)感測器,諸如石英晶體微天平(QCM)和薄膜體聲波諧振器感測器以及表面聲波(SAW)感測器)而言,氣相分析物在聚合物感測層上的吸附導致壓電換能器電路的共振頻率之變化。就電容型感測器而言,氣相分析物在聚合物感測層上的吸附提供裝置電容之變化,而用電導型氣體感測器進行的這種吸附導致裝置的電導率(或電阻)之改變。可測量的性質和感測器輸出信號的此類變化可以與聚合物層上吸附的分析物之含量相關聯。
該聚合物感測層包含選自取代的或未取代的聚伸芳基化物的感測聚合物,該感測聚合物包括單體的反應產物,或這種反應產物的固化產物,該單體包括包含芳族乙炔基團之第一單體和包含兩個或更多個環戊二烯酮基團之第二單體。第一單體和第二單體可為相同的或不同的,並且第一單體和第二單體可以視需要和較佳的是各自包含乙炔基團和環戊二烯酮基團。合適的聚伸芳基聚合物包括例如包含以下單體作為聚合單元的那些聚合物:一種或多種選自式 (1) 或式 (2) 之第一單體:(1)(2)
其中:R獨立地選自H、-C(=O)OR2
、取代的或未取代的C6
-20
芳基、或者取代的或未取代的C4
-20
雜芳基;R1
獨立地選自F,取代的或未取代的C1-10
烷基諸如C1-10
氟烷基、C1-10
羥烷基、或C1-10
胺基烷基,取代的或未取代的C6
-20
芳基,C4
-20
雜芳基,-C≡C-R,-C(=O)OR2
,-C(=O)NHR3
,-O-C(=O)R4
,-NHC(=O)R5
,-S(=O)2
-OR6
,或S(=O)2
-NHR3
;R2
獨立地選自H,取代的或未取代的C1-10
烷基諸如C1-10
氟烷基、C1-10
羥烷基、或C1-10
胺基烷基,C6
-20
芳基,或C4
-20
雜芳基;R3
獨立地選自H或者取代的或未取代的C1-10
烷基;R4
獨立地選自H或者取代的或未取代的C1-10
烷基,諸如C1-10
羥烷基、-O(C1-10
烷基)、或-NH(C1-10
烷基);R5
獨立地選自H或者取代的或未取代的C1-10
烷基,諸如C1-10
羥烷基、-O(C1-10
烷基)、或-NH(C1-10
烷基);R6
獨立地選自H或者取代的或未取代的C1-10
烷基;以及一種或多種包含兩個或更多個環戊二烯酮基團之第二單體。芳基基團可以包含一個或多個雜原子,例如N、O或S,較佳的雜芳基基團包括例如呋喃、吡啶、吡𠯤、吡唑、三𠯤、㗁唑、吲哚、苯并呋喃、咔唑、噻吩、喹啉酮、異喹啉或色烯中的一者或多者。芳基基團的典型取代基包括例如羥基、氟、胺基、羧基、硫代、或硫代羰基中的一者或多者。對於式 (1) 之單體,a為0至2的整數,更較佳的是,a為0或1。對於式 (2) 之單體,a為0至3、更較佳的是0至2、甚至更較佳的是0或1的整數。
每個R較佳的是獨立地選自H、C6
-20
芳基、或C4
-20
雜芳基,更較佳的是選自H、C6
-10
芳基、或C4
-10
雜芳基,還更較佳的是選自H或苯基。較佳的是,每個R1
獨立地選自-C(=O)OR2
、-C(=O)NHR3
、-O-C(=O)R4
、-S(=O)2
-OR6
和S(=O)2
-NHR3
,更較佳的是選自-C(=O)OR2
和-C(=O)NHR3
,還更較佳的是選自-C(=O)OR2
。較佳的是,R2
為H、C1-6
烷基、C1-6
羥烷基、或C1-6
胺基烷基,更較佳的是H、C1-4
烷基、或C1-6
羥烷基,甚至更較佳的是H。R3
較佳的是H或C1-6
烷基,更較佳的是H或C1-4
烷基。較佳的是,R4
為C1-6
烷基、C1-6
羥烷基、-O(C1-10
烷基)、或-NH(C1-10
烷基),更較佳的是C1-6
烷基、C1-6
羥烷基、-O(C1-6
烷基)、或-NH(C1-6
烷基)。R5
較佳的是H、C1-10
烷基、-O(C1-10
烷基)、或-NH(C1-10
烷基),更較佳的是H、C1-6
烷基、-O(C1-6
烷基)、或-NH(C1-6
烷基)。R6
較佳的是H或C1-6
烷基,更較佳的是H或C1-4
烷基,甚至更較佳的是H。式 (1) 和 (2) 之單體中的任何2個炔基部分彼此可以具有鄰位、間位或對位關係,較佳的是彼此具有間位或對位關係。較佳的是,炔基部分彼此不具有鄰位關係。合適的式 (1) 和 (2) 之單體通常是可商購獲得的,或者可以容易地藉由本領域已知之方法來製備。
聚伸芳基聚合物可以由一種或多種式 (1) 之單體、或者一種或多種式 (2) 之單體、或者一種或多種式 (1) 之單體和一種或多種式 (2) 之單體的混合物組成。式 (1) 之單體係較佳之第一單體。較佳的是,聚伸芳基聚合物由一種或多種式 (1) 之單體、或者一種或多種式 (1) 之單體和一種或多種式 (2) 之單體的混合物組成,更較佳的是,聚伸芳基聚合物由一種或多種式 (1) 之單體組成。
含有兩個或更多個環戊二烯酮部分的任何單體都可以合適地用作製備本發明之聚合物之第二單體。替代性地,可以將2種或多種不同的單體的混合物用作第二單體,每種單體具有兩個環戊二烯酮部分。含有兩個環戊二烯酮部分的此類單體係本領域熟知的,諸如在美國專利號5,965,679、6,288,188和6,646,081,美國申請公佈號2017-0009006 A1,以及國際專利公佈WO 97/10193和WO 2004/073824中描述的那些。較佳的是,第二單體具有式 (3) 所示之結構:(3)
其中每個R7
獨立地選自H、取代的或未取代的C1-6
烷基、取代的或未取代的C6
-20
芳基、或者取代的或未取代的C4
-20
雜芳基;並且Ar1
係芳族部分。較佳的是,每個R7
獨立地選自C3-6
烷基、苯基、或取代的苯基,更較佳的是,每個R7
為苯基。
其中每個R7
獨立地選自H、取代的或未取代的C1-6
烷基、取代的或未取代的C6
-20
芳基、或者取代的或未取代的C4
-20
雜芳基,較佳的是C3-6
烷基、取代的或未取代的苯基,更較佳的是,每個R7
為苯基;R8
為取代的或未取代的C6
-20
芳基,或者取代的或未取代的C4
-20
雜芳基,較佳的是苯基;R9
獨立地選自取代的或未取代的C1-6
烷基、取代的或未取代的C6-20
芳基、或者取代的或未取代的C4
-20
雜芳基,較佳的是取代的或未取代的C6
-20
芳基,最較佳的是苯基;並且Ar1
係芳族部分。
每個R10
獨立地選自鹵素、取代的或未取代的C1-6
烷基諸如C1-6
鹵代烷基、C1-6
烷氧基、C1-6
鹵代烷氧基、苯基、和苯氧基;c為0至4的整數;d和e中的每個為0至3的整數;每個Z獨立地選自O、S、NR11
、PR11
、P(=O)R11
、C(=O)、CR12
R13
、和SiR12
R13
;R11
、R12
和R13
獨立地選自H、取代的或未取代的C1-4
烷基諸如C1-4
鹵代烷基、和苯基。較佳的是,x為1或2,更較佳的是1。較佳的是,y為0或1,更較佳的是1。較佳的是,每個R10
獨立地選自鹵素、取代的或未取代的C1-4
烷基諸如鹵代C1-4
烷基、C1-4
烷氧基、鹵代C1-4
烷氧基、和苯基,更較佳的是選自氟、C1-4
烷基、氟代C1-4
烷基、C1-4
烷氧基、氟代C1-4
烷氧基、和苯基。較佳的是,c為0至3,更較佳的是0至2,還更較佳的是0或1。較佳的是,d和e中的每個獨立地為0至2,更較佳的是0或1。在式 (6) 中,較佳的是,d + e = 0至4,更較佳的是0至2。每個Z較佳的是獨立地選自O、S、NR11
、C(=O)、CR12
R13
和SiR12
R13
,更較佳的是選自O、S、C(=O) 和CR12
R13
,還更較佳的是選自O、C(=O) 和CR12
R13
。較佳的是,每個R11
、R12
和R13
獨立地選自H、C1-4
烷基、氟代C1-4
烷基、和苯基;更較佳的是選自H、C1-4
烷基、氟代C1-2
烷基、和苯基。較佳的是,每個Ar2
具有式 (5)。
聚伸芳基聚合物中的重複單元的數量通常為2至100。聚伸芳基聚合物可以呈均聚物或者具有兩種、三種或更多種不同類型的重複單元的共聚物的形式。合適的聚伸芳基聚合物可以例如包含在示例性聚伸芳基結構中表示的一個或多個重複單元。聚伸芳基聚合物通常具有1 kDa至200 kDa(例如3至100或4至50)的數目平均分子量Mn,數目平均分子量藉由使用聚苯乙烯標準品的GPC來測定。
如本文所用,「取代的」意指包含至少一個取代基,諸如鹵素(即,F、Cl、Br、I)、羥基、胺基、硫醇、腈、硝基、羧基、羰基、甲醯胺、醚、酯、碳酸酯、磺醯基、亞磺醯基、C1
-30
烷基、C2
-30
烯基、C7
-30
芳烷基、C6
-30
芳基、C4
-30
雜芳基、-OR、-C1
-30
伸烷基-OR、或-C1
-30
次烷基-OR;其中R選自例如H、C1
-30
烷基、C2
-30
烯基、C6
-30
芳基、或C4
-30
雜芳基。通常,取代基選自例如氟、C1
-20
烷基、C2
-20
烯基、C7
-30
芳烷基、C6
-20
芳基、C4
-20
雜芳基、-OR、-C1
-20
伸烷基-OR、或-C1
-20
次烷基-OR;更通常地選自氟、C1
-10
烷基、C2
-12
烯基、C7
-30
芳烷基、C6
-20
芳基、C4
-20
雜芳基、-OR、-C1
-20
伸烷基-OR、或C1
-20
次烷基-OR。R通常選自H、C1
-20
烷基、C2
-20
烯基、C6
-20
芳基、或C4
-20
雜芳基,更較佳的是H、C1
-10
烷基、C6
或20
芳基、或4
-20
雜芳基,最通常地H。應當理解,關於本文中的式所揭露的任何基團或結構均可以被這樣取代,除非另外指明,或者這種取代將顯著不利地影響所得的結構的期望性質。如本文所用,「雜芳基」係指含有至少一個選自氮、氧和硫的雜原子的芳族環系。較佳的是,雜芳基基團係五員環或六員環。
當含有指定數量的碳原子的基團被另一個基團取代時,所得的「取代」基團中的碳原子數為原始(未取代的)基團中含有的碳原子和取代基中含有的碳原子(如果有的話)的總和。例如,對於被C6
-C30
芳基基團取代的C1
-C20
烷基基團,所得的芳基取代的烷基基團中的碳原子的總數為C7
-C50
。
聚伸芳基感測聚合物可以由熟悉該項技術者容易地製備。聚合物感測層由包含感測聚合物和溶劑並且可以包含一種或多種視需要組分的感測聚合物組成物形成。基於感測聚合物組成物的總固體計,感測聚合物通常以90重量%至100重量%、95重量%至100重量%、98重量%至100重量%或100重量%的量存在於感測聚合物組成物中。
感測聚合物組成物的溶劑組分允許進行組成物的配製和澆鑄,並且可以包含單一溶劑或者兩種或更多種單獨溶劑的組合。溶劑組分應相對於組成物的感測聚合物和其他非溶劑組分表現出極好的溶解性特徵。溶劑將取決於感測聚合物組成物的特定聚合物和其他組分。溶劑可以選自水、水溶液、有機溶劑以及它們的混合物,其中有機溶劑係典型的。感測聚合物組成物的合適的有機溶劑包括例如:醇,諸如C1
-9
直鏈或者C3
-9
支鏈或環狀一元醇,諸如甲醇、乙醇、正丙醇、異丙醇、1-丁醇、2-丁醇、異丁醇、三級丁醇、2-甲基-1-丁醇、1-戊醇、2-戊醇、4-甲基-2-戊醇、1-己醇、1-庚醇、1-辛醇、2-己醇、2-庚醇、2-辛醇、3-己醇、3-庚醇、3-辛醇和4-辛醇、2,2,3,3,4,4-六氟-1-丁醇、2,2,3,3,4,4,5,5-八氟-1-戊醇、2,2,3,3,4,4,5,5,6,6-十氟-1-己醇,以及C5
-9
氟化二醇,諸如2,2,3,3,4,4-六氟-1,5-戊二醇、2,2,3,3,4,4,5,5-八氟-1,6-己二醇和2,2,3,3,4,4,5,5,6,6,7,7-十二氟-1,8-辛二醇;酯,諸如乳酸乙酯、2-羥基異丁酸甲酯、丙二醇甲醚乙酸酯、乙酸3-甲氧基丁酯,烷基酯,諸如乙酸烷基酯,諸如乙酸正丁酯,丙酸酯,諸如甲氧基丙酸甲酯、丙酸正丁酯、丙酸正戊酯、丙酸正己酯和丙酸正庚酯,以及丁酸烷基酯,諸如丁酸正丁酯、丁酸異丁酯和異丁酸異丁酯;酮,諸如丙酮、甲乙酮、環己酮、2,4-二甲基-3-戊酮、2,5-二甲基-4-己酮和2,6-二甲基-4-庚酮;脂族烴,諸如正庚烷、正壬烷、正辛烷、正癸烷、2-甲基庚烷、3-甲基庚烷、3,3-二甲基己烷和2,3,4-三甲基戊烷以及氟化脂族烴,諸如全氟庚烷;芳香烴,諸如苯甲醚、甲苯、二甲苯和均三甲苯;醚,諸如異戊醚、丙二醇甲醚、丙二醇單甲醚和四氫呋喃;內酯,諸如γ-丁內酯和γ戊內酯;內醯胺,諸如N-甲基-2-吡咯啶酮;含胺有機溶劑,諸如三甲胺、三乙胺、三異丙胺、苯胺、吡咯啶、哌啶和吡啶;以及含有該等溶劑中的一者或多者的混合物。在該等有機溶劑中,醇、脂族烴和醚係較佳的。基於感測聚合物組成物的總重量計,感測聚合物組成物的溶劑組分通常以80重量%至99重量%、更通常地90重量%至99重量%或95重量%至99重量%的量存在。
感測聚合物組成物可以包含一種或多種視需要的組分,該視需要的組分選自例如交聯劑、表面活性劑、抗氧化劑、著色劑、黏附促進劑或它們的組合。如果使用的話,此類視需要的添加劑通常基於組成物的總固體計以少量存在於組成物中。應當選擇視需要的添加劑和量,以使得聚合物感測層針對所關注的分析物的感測特性不會受到不良影響。
根據感測聚合物組成物中的特定聚合物,在感測聚合物組成物中包含交聯劑,例如從而為感測聚合物層中的感測聚合物提供改善的機械性質(諸如強度或彈性)可能是期望的。合適的交聯劑將取決於感測組成物中的聚合物,並且可以選自例如:蜜胺化合物,諸如六羥甲基蜜胺、六甲氧基甲基蜜胺、具有1-6個甲氧基甲基化的羥甲基基團的六羥甲基蜜胺化合物、六甲氧基乙基蜜胺、六醯氧基甲基蜜胺、和具有1-6個醯氧基甲基化的羥甲基基團的六羥甲基蜜胺化合物;胍胺化合物,諸如四羥甲基胍胺、四甲氧基甲基胍胺、具有1-4個甲氧基甲基化的羥甲基基團的四羥甲基胍胺化合物、四甲氧基乙基胍胺、四醯氧基胍胺、具有1-4個醯氧基甲基化的羥甲基基團的四羥甲基胍胺化合物、和苯并胍胺化合物;其上被至少一個選自羥甲基、烷氧基甲基和醯氧基甲基基團的基團取代的甘脲化合物,諸如四羥甲基甘脲、四甲氧基甘脲、四甲氧基甲基甘脲、具有1-4個甲氧基甲基化的羥甲基基團的四羥甲基甘脲化合物、和具有1-4個醯氧基甲基化的羥甲基基團的四羥甲基甘脲化合物;其上被至少一個選自羥甲基、烷氧基甲基和醯氧基甲基基團的基團取代的脲化合物,諸如四羥甲基脲、四甲氧基甲基脲、具有1-4個甲氧基甲基化的羥甲基基團的四羥甲基脲化合物、和四甲氧基乙基脲;環氧化合物,諸如三(2,3-環氧丙基)異氰脲酸酯、三羥甲基甲烷三縮水甘油醚、三羥甲基丙烷三縮水甘油醚、和三羥乙基乙烷三縮水甘油醚;異氰酸酯化合物、疊氮化合物;含羥基的化合物;或者具有雙鍵諸如烯基醚基團之化合物。該等化合物可以用作添加劑或者作為側基被引入聚合物側鏈中。如果使用交聯劑,則基於感測聚合物組成物的總固體計,交聯劑通常以0.5重量%至50重量%或0.5重量%至25重量%之量存在於感測聚合物組成物中。
典型的表面活性劑包括表現出兩親性質的那些,兩親性質意指它們可以同時是親水性的和疏水性的。兩親性表面活性劑具有一個或多個親水性頭基(其對於水具有強的親和力)以及親有機性且排斥水的長疏水尾。合適的表面活性劑可為離子的(即,陰離子、陽離子)或非離子的。表面活性劑的另外的實例包括有機矽表面活性劑、聚(氧化烯)表面活性劑、以及含氟化合物表面活性劑。合適的非離子表面活性劑包括但不限於辛基和壬基苯酚乙氧基化物,諸如TRITON® X-114、X-100、X-45、X-15,以及支鏈的二級醇乙氧基化物,諸如TERGITOL™ TMN-6(美國密西根州米德蘭的陶氏化學公司(The Dow Chemical Company, Midland, Michigan USA))。其他另外的示例性表面活性劑包括醇(一級醇和二級醇)乙氧基化物、胺乙氧基化物、葡糖苷、葡糖胺、聚乙二醇、聚(乙二醇-共-丙二醇),或新澤西州葛籣羅克(Glen Rock, N. J)的糖果製造商出版公司(Manufacturers Confectioners Publishing Co.)出版的2000年北美版McCutcheon's Emulsifiers and Detergents
[麥卡琴乳化劑和清潔劑] 中揭露的其他表面活性劑。作為炔二醇衍生物的非離子表面活性劑也可為合適的。此類表面活性劑可商購於賓夕法尼亞州亞蘭敦(Allentown, PA)的空氣化工產品有限公司(Air Products and Chemicals, Inc.)並且以商品名SURFYNOL和DYNOL銷售。另外合適的表面活性劑包括其他聚合物化合物,諸如三嵌段EO-PO-EO共聚物PLURONIC 25R2、L121、L123、L31、L81、L101和P123(巴斯夫公司(BASF, Inc.))。如果使用表面活性劑,則基於感測聚合物組成物的總固體計,表面活性劑通常以0.01重量%至10重量%的量存在於感測聚合物組成物中。
抗氧化劑可以包含在感測聚合物組成物中,以防止感測聚合物組成物中的有機材料的氧化或使該氧化最小化。合適的抗氧化劑包括例如基於苯酚的抗氧化劑、由有機酸衍生物構成的抗氧化劑、含硫抗氧化劑、基於磷的抗氧化劑、基於胺的抗氧化劑、由胺-醛縮合物構成的抗氧化劑以及由胺-酮縮合物構成的抗氧化劑。基於苯酚的抗氧化劑的實例包括取代的苯酚,諸如1-氧基-3-甲基-4-異丙基苯、2,6-二-三級丁基苯酚、2,6-二-三級丁基-4-乙基苯酚、2,6-二-三級丁基-4-甲基苯酚、4-羥甲基-2,6-二-三級丁基苯酚、丁基羥基苯甲醚、2-(1-甲基環己基)-4,6-二甲基苯酚、2,4-二甲基-6-三級丁基苯酚、2-甲基-4,6-二壬基苯酚、2,6-二-三級丁基-α-二甲基胺基-對甲苯酚、6-(4-羥基-3,5-二-三級丁基苯胺基)2,4-二辛基-硫代-1,3,5-三𠯤、正十八基-3-(4′-羥基-3′,5′-二-三級丁基苯基)丙酸酯、辛基化的苯酚、芳烷基取代的苯酚、烷基化的對甲苯酚和受阻酚;雙-、三-和多酚,如4,4′-二羥基聯苯、亞甲基雙(二甲基-4,6-苯酚)、2,2′-亞甲基-雙-(4-甲基-6-三級丁基苯酚)、2,2′-亞甲基-雙-(4-甲基-6-環己基苯酚)、2,2′-亞甲基-雙-(4-乙基-6-三級丁基苯酚)、4,4′-亞甲基-雙-(2,6-二-三級丁基苯酚)、2,2′-亞甲基-雙-(6-α-甲基-苄基-對甲苯酚)、亞甲基-交聯的多價烷基苯酚、4,4′-亞丁基雙-(3-甲基-6-三級丁基苯酚)、1,1-雙-(4-羥苯基)-環己烷、2,2′-二羥基-3,3′-二-(α-甲基環己基)-5,5′-二甲基二苯基甲烷、烷基化的雙酚、受阻雙酚、1,3,5-三甲基-2,4,6-三(3,5-二-三級丁基-4-羥基苄基)苯、三-(2-甲基-4-羥基-5-三級丁基苯基)丁烷、以及四-[亞甲基-3-(3′,5′-二-三級丁基-4′-羥苯基)丙酸酯]甲烷。合適的抗氧化劑係可商購的,例如,Irganox™抗氧化劑(汽巴特種化學品公司(Ciba Specialty Chemicals Corp.))。如果使用抗氧化劑,則基於感測聚合物組成物的總固體計,抗氧化劑通常以0.01重量%至10重量%的量存在於感測聚合物組成物中。
著色劑包括例如染料和顏料,並且對於改善聚合物感測層厚度的可測量性、檢查塗層品質的能力、使感測層與下層基底對準的能力或外觀中的一者或多者可能是所需的。合適的著色劑包括例如增量顏料,諸如水合氧化鋁、黏土、碳酸鋇和硫酸鋇;無機顏料,諸如氧化鋅、鉛白、鉻黃、紅色氧化物、群青藍、鐵藍、氧化鈦、鉻酸鋅、紅赭石和炭黑;有機顏料,諸如亮洋紅6B、永久紅6B、永久紅R、聯苯胺黃、銅酞菁藍和銅酞菁綠;鹼性染料,諸如品紅和玫瑰紅;直接染料,諸如直接猩紅和直接橙;酸性染料,諸如rhoserine和間胺黃。如果使用著色劑,則基於感測聚合物組成物的總固體計,著色劑通常以0.01重量%至10重量%的量存在於感測聚合物組成物中。
在感測聚合物組成物中使用黏附促進劑可以改善聚合物感測層對下層基底的黏附性。合適的黏附促進劑包括例如:含硫化合物,諸如二硫代甘油、雙(2,3-二羥丙基硫代)乙烯、3-(2,3-二羥丙基硫代)-2-甲基-丙磺酸鈉、1-硫代甘油、3-巰基-1-丙烷磺酸鈉、2-巰基乙醇、巰基乙酸、和3-巰基-1-丙醇;芳族羥基化合物,諸如苯酚、甲酚、二甲苯酚、鄰苯二酚、三級丁基鄰苯二酚、間苯二酚、對苯二酚、連苯三酚、1,2,4-苯三酚、水楊醇、對羥基苯甲醇、鄰羥基苯甲醇、對羥基苯乙醇、對胺基苯酚、間胺基苯酚、胺基苯酚、胺基間苯二酚、對羥基苯甲酸酯、鄰羥基苯甲酸、2,4-二羥基苯甲酸、2,5-二羥基苯甲酸、3,4-二羥基苯甲酸、3,5-二羥基苯甲酸和沒食子酸;基於苯并三唑的化合物,諸如苯并三唑、5,6-二甲基苯并三唑、1-羥基苯并三唑、1-甲基苯并三唑、1-胺基苯并三唑、1-苯基苯并三唑、1-羥基甲基苯并三唑、1-苯并三唑甲酸甲酯、5-苯并三唑羧酸、1-甲氧基-苯并三唑、1-(2,2-二羥乙基)-苯并三唑、1-(2,3-二羥丙基)苯并三唑或2,2′-{[(4-甲基-1H-苯并三唑-1-基)甲基]亞胺基}雙乙醇、2,2′-{[(5-甲基-1H-苯并三唑-1-基)甲基]亞胺基}雙乙醇、2,2′-{[(4-甲基-1H-苯并三唑-1-基)甲基]亞胺基}雙乙烷、和2,2′-{[(4-甲基-1H-苯并三唑-1-基)甲基]亞胺基}雙丙烷;基於三𠯤的化合物,諸如1,3,5-三𠯤-2,4,6-三硫醇(trithol),以及含矽化合物,諸如1,3,5-三𠯤-2,4,6-三硫醇(trithol)。如果使用黏附促進劑,則基於感測聚合物組成物的總固體計,黏附促進劑通常以0.05重量%至10重量%的量存在於感測聚合物組成物中。
感測聚合物組成物可以按照已知的程序製備和/或可商購獲得。例如,可以藉由將組成物的感測聚合物和其他視需要的固體組分溶解於溶劑組分中來製備組成物。組成物的期望的總固含量將取決於諸如以下因素:組成物中的一種或多種特定的聚合物和聚合物感測層的期望的最終厚度。通常,基於感測聚合物組成物的總重量計,感測聚合物組成物的固含量為1重量%至20重量%,更通常地1重量%至10重量%或1重量%至5重量%。
在感測器形成期間,可以藉由旋塗、浸塗、滴鑄、輥塗、網版印刷、噴墨印刷、凹版印刷或其他常規塗覆技術來施加感測聚合物組成物。在該等塗覆技術中,旋塗係典型的。對於旋塗,可以基於所採用的特定塗覆設備、溶液的黏度、塗覆工具的旋轉速度和旋轉允許的時間量來調整感測聚合物組成物的固含量,以提供期望的膜厚度。
聚合物感測層通常在高溫下固化,以從層中除去基本上所有的溶劑,從而形成無黏性塗層,並且改善層與下層結構的黏附性。根據特定聚合物和組成物的組分,固化可以例如藉由氧化、除氣、聚合、縮合、或交聯中的一者或多者來使聚合物進一步改變。固化通常在熱板上或烘箱中進行。固化可以例如在空氣或惰性氣體(諸如氮氣、氬氣或氦氣)的氣氛中進行,或者可以在真空下進行。在本發明之較佳的方面,聚合物感測層在惰性氣體氣氛中固化。固化的溫度和時間將取決於例如感測聚合物組成物的特定聚合物和溶劑以及層的厚度。典型的固化溫度為100°C至450°C,300°C至400°C或325°C至350°C的溫度係較佳的。較佳的是,在惰性氣體氣氛中,在300°C至400°C或325°C至350°C的溫度下進行固化。固化時間通常為30秒至兩小時,較佳的是10至90分鐘或50至70分鐘。固化可以按一個步驟或按多個步驟進行。可以藉由在恒定溫度下或以變化的溫度曲線(諸如傾斜的或階梯的溫度曲線)加熱聚合物感測組成物層來進行固化。
本發明之較佳的感測聚合物組成物,諸如在上述較佳的條件下固化的那些,可以表現出有益的特性,例如高分析物靈敏度和隨時間推移的極好的穩定性。不希望受任何特定理論的束縛,據信在較佳的條件下感測聚合物組成物的固化可以有效地交聯聚合物,同時使氧化最小化或消除。藉由固化的感測聚合物層的FTIR和拉曼光譜的組合可以看出感測聚合物的交聯的存在和程度。在一個方面,較佳的固化的聚合物感測層表現出FTIR光譜具有0.15或更小的1648至1690 cm-1
的總峰面積與1480至1522 cm-1
的總峰面積的較佳的比率。據信,FTIR峰比率示出了預固化的感測聚合物在固化過程中發生的氧化的程度。在另一個方面,較佳的聚合物感測層表現出拉曼光譜具有1.0或更小的2190至2250 cm-1
的總峰面積與1550至1650 cm-1
的總峰面積的較佳的比率。據信,拉曼峰比率示出了預固化的感測聚合物中的炔烴在固化過程中發生的反應的程度。本發明之較佳的聚伸芳基感測聚合物在固化過程中不表現出氧含量的增加。較佳的是,固化的聚合物感測層具有藉由X射線光電子能譜法來測量的7原子%或更低的氧含量。據信,氧含量示出了預固化的感測聚合物的氧化程度。
聚合物感測層的厚度沒有特別限制,並且將取決於例如特定的聚合物、感測器類型和感測器幾何形狀。聚合物感測層的厚度通常為10 nm至10微米。就聲波感測器而言,厚度通常為10至1000 nm、50至500 nm或100至400 nm。電容型和電導型感測器中的感測層通常為1至10微米。如果厚聚合物層係期望的,則可以再次重複塗覆和視需要的固化一次或多次。聚合物感測層的厚度的上限可以由感測器的特定類型來決定。例如,就聲波感測器而言,壓電晶體層的振盪能力可以決定厚度上限,其中較厚的層通常會抑制振盪。
不限於此,可以被施加聚合物感測層的本發明之氣體感測器包括聲波感測器、電容型感測器和電導型感測器。將參考圖1-4進一步描述本發明,該等圖示出了根據本發明之示例性的此類氣體感測器。
圖1-3示出了根據本發明之各種聲波感測器。合適的聲波感測器包括例如體聲波感測器(諸如石英晶體微天平和薄膜體聲波諧振器感測器)、和表面聲波感測器。此類感測器類型和通常的聲波感測器以及它們的製造係本領域已知的,並且例如在D. S. Ballantine等人,Acoustic Wave Sensors Theory, Design, and Physico-Chemical Applications
[聲波感測器理論、設計和物理化學應用], 學術出版社(Academic Press)(1997),G. Korotcenkov,Handbook of Gas Sensor Materials: Properties, Advantages and Shortcomings for Applications Volume 1: Conventional Approaches, Integrated Analytical Systems
[氣體感測器材料手冊:針對應用的性質、優點和缺點,第1卷:常規方法、綜合分析系統], 施普林格出版社(Springer)(2013)中有所描述。如本文所述之聚合物感測層在聲波感測器中的應用可以實現氣相分析物的感測,該氣相分析物包括例如苯、甲苯、二甲苯、均三甲苯、乙醇、甲醛、乙醛、丙酮、乙酸、或三烷基胺中的一者或多者。該等感測器特別適用於有機材料的感測。
表現出壓電效應的任何壓電材料(晶體)都可以用於聲波感測器中的壓電層。典型的壓電材料包括例如磷酸鎵、石英、電氣石、鈦酸鋇、鈮酸鎂-鈦酸鉛、鋯鈦酸鉛、鈮酸鋰、鉭酸鋰、硝酸鋁、或氧化鋅。通常,壓電材料在20 kHz至100 MHz、通常0.1至50 MHz、更通常地0.1至30 MHz的頻率範圍內具有基本模式。視需要,可以在更高的頻率範圍(例如,1 MHz至20 GHz、或30 MHz至500 MHz)內使用採用諧波的檢測。
根據感測器類型和設計,可以將聚合物感測層直接設置在壓電層上(即,與壓電層物理接觸),或者在聚合物感測層與壓電層之間設置一個或多個中間層。在一些感測器設計中,聚合物感測層可以設置在感測器的電極上,電極又可以設置在壓電層上,諸如在某些QCM或FBAR感測器中。在一些感測器設計中,聚合物感測層可以設置在電極之間,諸如在SAW感測器中。
圖1以截面圖示出了例示性QCM感測器,該QCM感測器包括石英晶體(壓電)共振層(晶體)100、在共振層的前表面上的前(即,感測側)電極102、在共振層的後表面上的後電極103,以及設置在前電極102上的如本文所述之聚合物感測層104。電極由金屬(通常是金或鈦)製成,並且可以藉由金屬化過程(諸如電鍍、濺射或蒸發)來形成。QCM系統進一步包括金屬石英晶體支架和用於供電以及控制和測量共振頻率的電子器件。可以藉由測量由聚合物感測層的分析物質量負荷引起的頻移來進行分析物檢測。關於感測層對分析物分子的化學親和力的知識允許使共振頻率與分析物濃度相關聯。本發明之QCM感測器的工作頻率通常為5至300 MHz。QCM感測器係本領域已知的(例如,美國專利號6,156,578A)。根據本發明之QCM感測器可以由熟悉該項技術者製造。另外,適用於形成根據本發明之感測器的QCM感測器係可商購獲得的,例如,可從斯坦福研究系統公司(Stanford Research Systems)和英福康公司(Inficon)獲得的那些。同樣,使用除石英之外的壓電材料(例如,矽酸鑭鎵(langasite)和磷酸鎵)的微天平也是可商購獲得的。可以例如藉由在前電極102上施加如本文所述之感測聚合物組成物層以形成聚合物感測層104來改進此類商業感測器。
圖2以截面圖示出了根據本發明之示例性薄膜體聲波諧振器(FBAR)感測器。FBAR感測器包括通常由單晶矽形成的基底200,在該基底上設置有絕緣層202、前(即,感測側)電極204、壓電層206、後電極208、以及設置在形成於基底中的腔體212中的如本文所述之聚合物感測層210。FBAR感測器通常藉由熟悉該項技術者已知的矽微加工技術來形成(例如,A. Lin等人,「Explosive trace detection with FBAR-based sensor」[使用基於FBAR的感測器進行爆炸物痕量檢測],2008 IEEE 21st International Conference on Micro Electro Mechanical Systems
, Tucson, AZ [2008年IEEE第21屆微機電系統國際會議,亞利桑那州圖桑], 2008, 第208-211頁)。示例性製造過程包括在單晶矽晶圓基底200上沈積絕緣層202,通常是低應力LPCVD氮化矽。通常在光刻過程(例如,光致抗蝕劑塗覆、曝光、顯影、蝕刻)中對晶圓正面上的氮化物進行圖案化,以形成暴露出矽基底的開口。接下來,通常藉由諸如使用KOH溶液的濕蝕刻法來蝕刻矽基底的暴露部分,以在矽前表面中形成腔體212。接下來,可以例如藉由蒸發然後是圖案化來形成前電極204。典型的電極材料係金,鉻作為黏合層。接下來,可以對壓電層206(例如,ZnO層)進行濺射沈積和圖案化。接下來,可以藉由蒸發然後是圖案化(諸如藉由剝離技術)來形成後電極208(例如,鉻上的金層)。接下來,可以如本文所述在腔體212中在基底正面上的絕緣層上形成聚合物感測層210。提供電子器件(諸如參考圖1描述的電子器件)以用於供電以及控制和測量共振頻率。可以按照與QCM所述類似的方式進行分析物檢測和測量。本發明之FBAR感測器的工作頻率通常為500 MHz至20 GHz。
圖3以截面圖和俯視圖示出了根據本發明之示例性表面聲波感測器。SAW感測器包括壓電基底(層)300、輸入叉指式換能器(IDT)302、輸出叉指式換能器304、以及輸入和輸出電路(未示出)。壓電基底的典型材料包括例如石英、鈮酸鋰、鉭酸鋰、氮化鋁、或氧化鋅。輸入IDT和輸出IDT包括在壓電層300上形成的薄膜叉指電極圖案。通常藉由在壓電基底上沈積薄金屬層,然後對金屬膜進行光刻圖案化來形成該等結構。輸入和輸出IDT電極的典型材料係金、鉻、鋁或它們的複合材料,諸如鉻上的金或者鉻和鋁上的金。如本文所述之聚合物感測層306提供於壓電層300上,並且設置在輸入IDT電極302與輸出IDT電極304之間。
本發明之SAW感測器可以藉由熟悉該項技術者已知之方法來製造。SAW感測器例如在美國專利號9,329,154 B1中有所描述。SAW感測器可以包括另外的換能器和/或另外的電路。當IDT 302被輸入電路刺激時,IDT作為壓電電路的一部分與壓電基底一起,以與輸入電信號的交流頻率相關的振盪頻率將電荷轉換為基底表面的機械變形。輸入電信號藉由逆壓電效應產生表面聲波,表面聲波傳播通過壓電基底300。當表面聲波撞擊輸出IDT 304時,表面聲波藉由直接壓電效應被轉換回電信號,該直接壓電效應在輸出IDT 304處產生輸出電信號。輸出電信號的幅值與表面聲波的幅值直接相關。如上文所討論,聚合物感測層306能夠與所關注的氣相分析物發生選擇性相互作用。當分析物的分子被聚合物感測層吸附時,感測層的質量密度增加。這種增加改變或延遲表面聲波通過SAW裝置的傳播,這可以例如被記錄為與所吸附的分析物的量成正比的表面聲波的相移。
圖4以截面圖和俯視圖示出了根據本發明之電容型氣體感測器和電導型(或電阻型)氣體感測器。感測器包括基底400、基底上的叉指電極(IDE)402、以及設置在基底400和IDE 402上的如本文所述之聚合物感測層406。基底的典型材料包括例如玻璃或矽。通常藉由將薄金屬層沈積於基底上,然後對金屬膜進行光刻圖案化來形成IDE。IDE通常是金或鉻上的金的複合材料。如本文所述之聚合物感測層406提供於基底400和IDE 402上。感測器還可以設有加熱元件(未示出)。就電容型感測器而言,藉由施加交流電壓並且隨時間推移而改變交流電壓的頻率來測量介電常數。從電流和相位關係來計算介電常數。就電導型(或電阻型)氣體感測器而言,裝置的電導率(或電阻)的變化例如作為電流變化來測量,該電流變化可以與感測層中分析物的含量相關聯。根據本發明之電容型和電導型感測器(包括本文所述之聚伸芳基感測材料層)可以由熟悉該項技術者製造。
本發明之氣體感測器可以藉由將聚合物感測層暴露於大氣中以監測所關注的氣相分析物的感測來使用。就聲波感測器而言,可以響應於聚合物感測層上的氣相分析物的存在而監測感測器的共振頻率。信號的變化可以經由下游處理器直接轉換為質量變化,並且可以在顯示器上顯示。
合適的分析物包括將吸附到聚合物感測層上的氣體或蒸氣(統稱為氣體)形式的那些分析物。分析物通常在室溫下為氣相或液相。通常加熱液體分析物以增加它們的氣相濃度,從而促進與聚合物感測層的相互作用。本發明之感測器特別適於測量有機分析物。合適的有機分析物包括例如苯、甲苯、二甲苯、均三甲苯、乙醇、甲醛、乙醛、丙酮、乙酸、或三烷基胺中的一者或多者。感測器可以另外地或替代性地用於無機分析物,例如水蒸氣或二氧化碳。
本發明之較佳的氣體感測器可以用於感測所關注的分析物的重複使用。在這種情況下,分析物與聚合物感測層之間的相互作用係可逆的。圖5係根據本發明之聲波感測器的共振頻率對時間的代表性圖,該圖顯示了對分析物的響應和恢復。在定量添加分析物之前,感測器在參考點A處表現出初始基線共振頻率。感測器在參考點A處開始暴露於分析物,直到在參考點B處達到完全響應。共振頻率的降低表示分析物與聚合物感測層之間發生了相互作用。據信,這種相互作用係由於感測層在感測器的期望工作溫度下對分析物具有親和力,但是不與分析物形成共價鍵。不希望受任何特定理論的束縛,據信,這種相互作用係物理吸附、化學吸附、共混溶性、電荷耦合錯合、氫鍵、離子鍵等等中的一者或多者。然後終止分析物的定量添加,使感測器暴露於大氣、惰性氣體或其他基本上不含分析物的環境條件下。隨著分析物與聚合物感測層之間的相互作用開始逆轉,例如藉由解吸或解離,共振頻率隨時間而增加,直到在參考點C處達到新的基線水平。新的基線水平共振頻率可以與原始基線水平相同或不同,例如取決於聚合物-分析物相互作用的強度、濕度或模量(例如作為分析物-感測聚合物膜相互作用的結果的剪切模量和/或彈性模量)在定量添加前後的變化、或者共沸分析物移除。
在圖5中,「響應」係感測器從初始(定量添加前)基線至分析物的完全響應值的測得共振頻率(Hz)的變化。「恢復」係感測器從完全響應到從感測器清除分析物後的新的基線C的測得共振頻率(Hz)的變化。「恢復時間」係聚合物感測層從參考點B處的完全響應達到參考點C處新的基線水平所需的時間。恢復百分比等於給定分析物的恢復/響應的比率。根據本發明之較佳的感測器可以表現出50%或更高的恢復率,更較佳的是,60%或更高的恢復率、70%或更高的恢復率、80%或更高的恢復率、或者90%或更高的恢復率。較佳的是,在90分鐘內、更較佳的是在60分鐘內、在30分鐘內、或在15分鐘內實現這種恢復。較佳的是,這種恢復在室溫(例如,20°C-30°C)下發生,但是可以在更高的溫度下進行,例如,在高達100°C的溫度下進行。給定感測器的溫度限將取決於例如感測器的構造材料,諸如取決於聚合物感測層的性質(例如,聚合物的玻璃化轉變溫度)。如果使用的話,可以例如藉由使用內部或外部加熱器,或者藉由使用加熱的吹掃氣體接觸聚合物感測層來進行感測器加熱。通常在室溫下90分鐘內,感測器恢復率達到50%或更高。對於其他感測器類型(諸如電容型和電導型感測器),可以展示出類似的結果。
上述特徵可以允許重複使用本發明之感測器。例如,本發明之感測器可以暴露於有效降低感測器中的氣相分析物含量的第二氣氛中。使所測量的氣體感測器類型的性質(例如,聲波感測器的共振頻率)恢復至基線水平。然後可以使感測器暴露於包含氣相分析物之第三氣氛中。該氣相分析物可以與先前測量中感測的相同或不同。可以重複該測量順序一次或多次。
以下非限制性實例說明本發明。
實例感測聚合物合成
使用下文描述的程序來合成以下聚合物A-E。數目平均分子量(Mn
)、重量平均分子量(Mw
)和多分散度(PDI = Mw
/Mn
)在報導時係基於聚苯乙烯標準品藉由凝膠滲透層析法(GPC)而測定。聚合物F係由杜邦公司電子器件和成像部門(Dupont Electronics & Imaging)以SiLK™ J聚伸芳基樹脂銷售的商業化材料。
在室溫下,向4升圓柱反應器中裝入485.010 g二苯并呋喃雙(三苯基環戊二烯酮)(DPO-CPD)、27.370 g 3,5-二乙炔基苯甲酸(DEBzOH)和2422 g γ-丁內酯(GBL)。然後在燒瓶的頂部裝配乾冰冷凝器、帶溫度控制器的熱電偶、N2
入口和攪拌系統。將反應器置於合適的加熱套中。將系統抽空並用N2
吹掃三次,以從器皿中除去空氣,隨後用恒定流量的N2
對其進行覆蓋。然後將反應系統加熱至135°C的內部溫度。在1小時後,使系統冷卻至90°C,然後向燒瓶中添加第二等分試樣(27.780 g)的DEBzOH,以及另外的300 g GBL。將反應混合物再次加熱至135°C,並在該溫度下保持1小時。使系統再次冷卻至90°C,然後向燒瓶中添加第三等分試樣(27.110 g,0.25當量)的DEBzOH,以及另外的330 g GBL。將反應混合物再次加熱至135°C,並在該溫度下保持1小時,此後,使系統再次冷卻至90°C,然後向燒瓶中添加第四等分試樣(30.763 g,0.29當量)的DEBzOH,以及另外的330 g GBL。將反應混合物再次加熱至135°C,並在該溫度下保持6小時。然後將反應混合物冷卻至室溫。藉由在室溫下添加異丙醇,以將所得的二乙炔基苯甲酸-雙環戊二烯基聚伸芳基聚合物從溶液中沈澱出來,從而將它從反應混合物中分離出來,過濾並用另外的異丙醇洗滌,然後將濾液在70°C下乾燥24小時,得到聚合物A。[聚合物A:Mn
= 10.26 kDa;Mw
= 21.33 kDa;PDI = 2.08]。
合成實例2:
將DPO-CPD(109.42 g)和1,3-二乙炔基苯(18.34 g)添加至1 L OptiMax反應器(玻璃襯裡,帶有Teflon™含氟聚合物排泄塞)中。添加乙氧基苯溶劑(309 g),以形成深栗色非均相混合物。將反應器轉移至OptiMax合成工作站,並且在氮氣氣氛下密封。在反應器頂部固定具有4槳式攪拌器的攪拌棒(升高至距反應器底部1釐米)、水冷回流冷凝器、內部熱電偶(置於混合物的中間深度,徑向設置在攪拌軸與反應器壁的中間)和1 cm擋板(垂直並且鄰近反應器的外壁放置)。將反應器的內部溫度設定為25°C,並且以100 rpm開始攪拌,以混合非均相內容物。在25°C下平衡30分鐘後,將反應器以1°C/min的速率加熱,直到內部溫度達到115至135°C。將反應器在目標溫度下維持18小時。然後將反應器以1°C/min的速率冷卻至25°C。然後將反應器的內容物通過反應器底部的出口轉移至瓶中,得到聚合物B。[聚合物B:Mn
= 37.02 kDa;Mw
= 105.95 kDa;PDI = 2.86]。
合成實例3
將4,4'-(氧雙(4,1-伸苯基))雙(3-苯基-2,5-雙(4-(苯基乙炔基)苯基)環戊-2,4-二烯-1-酮(A4B2)(200 g,1當量)和1,3-二乙炔基苯(21.7 g,1.02當量)添加至1 L OptiMax反應器(玻璃襯裡,帶有Teflon™含氟聚合物排泄塞)中。添加一定量的苯甲醚溶劑以提供含有30重量%固體的溶液,從而形成深栗色非均相混合物。將反應器轉移至OptiMax合成工作站,並且在氮氣氣氛下密封。在反應器頂部固定具有4槳式攪拌器的攪拌棒(升高至距反應器底部1釐米)、水冷回流冷凝器、內部熱電偶(置於混合物的中間深度,徑向設置在攪拌軸與反應器壁的中間)和1 cm擋板(垂直並且鄰近反應器的外壁放置)。將反應器的內部溫度設定為25°C,並且以100 rpm開始攪拌,以混合非均相內容物。在25°C下平衡30分鐘後,將反應器以1°C/min的速率加熱,直到內部溫度達到115°C至135°C。將反應器在目標溫度下維持72小時。然後將反應器以1°C/min的速率冷卻至25°C。然後將反應器的內容物通過反應器底部的出口轉移至瓶中,得到聚合物C。[聚合物C:Mn
= 19.6 kDa;Mw
= 49.7 kDa;PDI = 2.53]。
合成實例4
將A4B2(1當量)和DEBzOH(1.01當量)添加至1 L OptiMax反應器(玻璃襯裡,帶有Teflon™含氟聚合物排泄塞)中。添加一定量的PGMEA溶劑以提供含有30重量%固體的溶液,從而形成深栗色非均相混合物。將反應器轉移至OptiMax合成工作站,並且在氮氣氣氛下密封。在反應器頂部固定具有4槳式攪拌器的攪拌棒(升高至距反應器底部1釐米)、水冷回流冷凝器、內部熱電偶(置於混合物的中間深度,徑向設置在攪拌軸與反應器壁的中間)和1 cm擋板(垂直並且鄰近反應器的外壁放置)。將反應器的內部溫度設定為25°C,並且以100 rpm開始攪拌,以混合非均相內容物。在25°C下平衡30分鐘後,將反應器以1°C/min的速率加熱,直到內部溫度達到115°C。將反應器溫度在目標溫度下維持18小時。然後將反應器以1°C/min的速率從115°C冷卻至25°C。然後將反應器的內容物通過反應器底部的出口轉移至瓶中,得到聚合物D。[聚合物D:Mn
= 22.0 kDa;Mw
= 70.0 kDa;PDI = 3.18]。
合成實例5
將4-乙炔基鄰苯二甲酸酐(2.1當量)和5,5'-氧雙(3-(三氟甲基)苯胺)(1當量)在裝有克萊森(Claisen)適配器的圓底燒瓶中,在磁力攪拌的乙酸(0.2 M相對於5,5'-氧雙(3-(三氟甲基)苯胺))中組合。將克萊森適配器裝上乾冰冷卻的冷凝阱,其中將正壓氮氣施加到冷凝器頂部的入口,以及溫度計適配器,其中熱電偶伸入攪拌的反應混合物中。然後將反應混合物加熱至回流(118°C),並且保持回流兩小時。將反應混合物冷卻至室溫,轉移至分液漏斗中,並緩慢滴入室溫的去離子水中。從懸浮液混合物中真空過濾出固體沈澱物,並且重懸於去離子水中,攪拌30分鐘。將懸浮液真空過濾,並將所得的固體懸浮,在攪拌下再次洗滌30分鐘並且真空過濾,得到2,2'-(氧雙(5-(三氟甲基)-3,1-伸苯基))雙(5-乙炔基異吲哚啉-1,3-二酮)(FODA)(96.71%收率)。將餅狀固體在80°C的真空烘箱中乾燥48小時以除去水和殘留的乙酸。藉由1
H-NMR來監測產物乾燥,這確認了期望的產物的存在。
將A4B2(1當量)和FODA(1.1當量)以一定量在GBL中混合,以在如上文所述之配備有磁力攪拌棒、克萊森適配器、乾冰冷卻的冷凝阱、溫度計適配器和熱電偶的圓底燒瓶中提供含有20重量%固體的溶液。然後將反應混合物在氮氣氣氛下加熱至150°C,在150°C下維持6小時,冷卻至室溫,並用高純度丙酮稀釋。將稀釋的聚合物溶液轉移至分液漏斗中,然後緩慢逐滴添加至機械攪拌的、室溫的去離子水中。從懸浮液混合物中真空過濾出固體沈澱的聚合物,並且重懸於去離子水中,攪拌30分鐘。將懸浮液真空過濾,將固體懸浮並在攪拌下再次洗滌30分鐘,並且再次真空過濾得到灰白色固體粉末。將餅狀固體在真空烘箱中在80°C下乾燥48小時,以除去水,得到聚合物E。[聚合物E:Mn
= 13.7 kDa;Mw
= 37 kDa;PDI = 2.7]。感測聚合物組成物的製備
藉由將聚合物組成物和溶劑以表1所示的重量百分比在20 mL閃爍管中組合來製備感測聚合物組成物。攪拌混合物直到形成溶液。
[表1]
感測器製備
實例 | 感測聚合物組成物 | 聚合物組成物 | 溶劑 | 聚合物含量(重量 % ) |
1 | SC-1 | 合成實例1(聚合物A) | PGMEA | 5 |
2 | SC-2 | 合成實例2(聚合物B) | 苯甲醚 | 5 |
3 | SC-3 | 合成實例3(聚合物C) | 苯甲醚 | 10 |
4 | SC-4 | 合成實例4(聚合物D) | PGMEA | 5 |
5 | SC-5 | 合成實例5(聚合物E) | PGMEA | 5 |
6 | SC-6 | (聚合物F) | PGMEA | 5 |
QCM氣體感測器藉由以下步驟來製備:在Laurell WS-650 MZ-8NPPB旋塗機上,如表2所指定,將感測聚合物組成物以1500 rpm旋塗於相應的具有Cr/Au電極(斯坦福研究系統公司(Stanford Research Systems)O100RX1)的1英吋石英晶體上30秒。就空氣環境而言使用熱板在表2所示的條件下固化感測聚合物層,就氮氣環境而言使用Palomar Technologies SST 1200台式爐固化感測聚合物層。分析物感測程序
將如上文所述製備的相應的聚合物膜塗覆的QCM部件放置於晶體保持器中,並且以距頂部4英吋的深度設置於QCM系統的7L Pyrex測試室中。建立定量添加前的基線共振頻率f pd
(圖5中的參考點A),並且向測試室中定量添加1 µL液相甲苯(26 ppm)。藉由磁力攪拌器攪拌分析物,從而使液體以蒸氣相分散和擴散至整個室中。經由從定量添加前的基線共振頻率至達到全響應共振頻率(圖5中的參考點B)的共振頻移,使QCM對劑量產生響應。使測試室與大氣相通,並允許感測器的共振頻率恢復直至達到恒定的定量添加後基線頻率(圖5中的參考點C)或90分鐘(以較早者為准)。靈敏度被確定為定量添加前基線共振頻率減去全響應共振頻率,響應時間(t resp
)被確定為達到全靈敏度響應的95%的時間。在製備膜的當天和老化七天後對感測器進行評估。結果提供於表2中。
[表2]
nmd = 無測量數據(未測量樣品之膜厚度);t resp
= 響應時間。傅裡葉變換紅外( FTIR )光譜表徵
實例 | 感測聚合物組成物 | 固化溫度 / 時間 ( °C/min ) | 固化環境 | 膜厚度 ( nm ) | 第 0 天的靈敏度( Hz ) | 第 0 天的 tresp ( min ) | 第 7 天的靈敏度 ( Hz ) | 第 7 天的 t resp ( min ) |
7 | SC-1 | 350/60 | 空氣 | 170 | 16.509 | 520 | 11.069 | 1430 |
8 | SC-1 | 350/60 | N2 | 170 | 35.040 | 280 | 17.115 | 410 |
9 | SC-2 | 350/60 | 空氣 | 350 | 22.076 | 480 | 9.431 | 1070 |
10 | SC-2 | 350/60 | N2 | 350 | 35.893 | 1420 | 16.294 | 1220 |
11 | SC-3 | 350/60 | 空氣 | 800 | 247.996 | 300 | 17.245 | 2670 |
12 | SC-3 | 350/60 | N2 | 800 | 162.213 | 320 | 138.320 | 2730 |
13 | SC-3 | 325/60 | 空氣 | 350 | 101.229 | 140 | 42.329 | 340 |
14 | SC-3 | 325/60 | N2 | 350 | 111.989 | 290 | 87.048 | 1980 |
15 | SC-3 | 300/60 | 空氣 | 800 | 123.983 | 280 | 35.057 | 210 |
16 | SC-3 | 300/60 | N2 | 800 | 78.656 | 710 | 62.452 | 1010 |
17 | SC-3 | 275/5 | 空氣 | 350 | 42.419 | 170 | 29.942 | 210 |
18 | SC-3 | 350/240 | N2 | 860 | 338.153 | 420 | 258.154 | 510 |
19 | SC-4 | 350/60 | 空氣 | 130 | 12.500 | 30 | 1.612 | 1370 |
20 | SC-4 | 350/60 | N2 | 130 | 41.570 | 230 | 9.195 | 1210 |
21 | SC-5 | 350/60 | 空氣 | nmd | 7.615 | 250 | 1.347 | 1010 |
22 | SC-5 | 350/60 | N2 | nmd | 26.371 | 570 | 15.776 | 740 |
23 | SC-6 | 350/60 | 空氣 | nmd | 5.606 | 250 | 2.356 | 680 |
24 | SC-6 | 350/60 | N2 | nmd | 34.815 | 600 | 9.760 | 1320 |
使用裝有Harrick Scientific Brewster角度調節裝置的Thermo Scientific Nicolet iS5儀器,對切片(1英吋×1英吋)矽晶圓上的薄膜進行FTIR光譜分析。所有基線均採自從與聚合物官能化的晶圓相同的晶圓上切割的未改性裸矽晶圓。記錄在4000與400 cm-1
之間的光譜。測定從1480至1522 cm-1
的總峰面積(峰積分)和從1648至1690 cm-1
的總峰面積。測定樣品的後峰面積與前峰面積的比率,並在表3中列出。拉曼光譜表徵
使用Horiba LabRam HR拉曼顯微鏡進行拉曼光譜測量,該拉曼顯微鏡使用633 nm激發,具有300 gr/mm光柵。使用100x物鏡(Olympus Mplan-100x,NA 0.9)進行測量。測定從2190至2250 cm-1
的總峰面積(峰積分)和從1550至1650 cm-1
的總峰面積。測定樣品的前峰面積與後峰面積的比率,並在表3中列出。
[表3]
* = 1648-1690 cm-1
處的總FTIR峰面積(峰積分)與1480-1522 cm-1
處的總峰面積的比率;** = 2190-2250 cm-1
的總拉曼峰面積與1550-1650 cm-1
處的總峰面積的比率;NMP = 未測量,因為官能基在所測量的範圍內不具有峰;NMF = 由於螢光效應無法測量;nmd = 未獲得樣品之測量數據。
實例 | 感測聚合物組成物 | 固化溫度 / 時間 ( °C/min ) | 固化環境 | *FTIR 峰面積比 | ** 拉曼峰面積比 |
25 | SC-1 | 350/60 | 空氣 | 0.108 | NMP |
26 | SC-1 | 350/60 | N2 | 0.420 | NMP |
27 | SC-2 | 350/60 | 空氣 | 0 | NMP |
28 | SC-2 | 350/60 | N2 | 0 | NMP |
29 | SC-3 | 350/60 | 空氣 | 1.124 | NMF |
30 | SC-3 | 350/60 | N2 | 0.086 | 0.654 |
31 | SC-3 | 325/60 | 空氣 | 0.625 | 0.661 |
32 | SC-3 | 325/60 | N2 | 0.051 | 0.978 |
33 | SC-3 | 300/60 | 空氣 | 0.125 | 1.072 |
34 | SC-3 | 300/60 | N2 | 0.052 | 1.073 |
35 | SC-3 | 250/60 | 空氣 | 0.063 | 1.142 |
36 | SC-3 | 250/60 | N2 | 0.064 | 1.134 |
37 | SC-4 | 350/60 | 空氣 | 1.408 | NMF |
38 | SC-4 | 350/60 | N2 | 0.142 | 0.592 |
39 | SC-5 | 350/60 | 空氣 | 0.954 | NMF |
40 | SC-5 | 350/60 | N2 | 0.097 | 0.563 |
41 | SC-6 | 350/60 | 空氣 | 0.484 | NMF |
42 | SC-6 | 350/60 | N2 | 0.078 | 0.488 |
無
將參照以下附圖描述本發明,在附圖中相似的參考號表示相似的特徵,並且在附圖中:
[圖1]以截面圖示出了根據本發明之石英晶體微天平感測器;
[圖2]以截面圖示出了根據本發明之薄膜體聲波諧振器感測器;
[圖3]以截面圖和俯視圖示出了根據本發明之表面聲波感測器;
[圖4]以截面圖和俯視圖示出了根據本發明之電容型和電導型氣體感測器;以及
[圖5]係共振頻率對時間之代表性圖,該圖顯示了根據本發明之對分析物的響應和聲波感測器之恢復。
無
Claims (16)
- 一種氣體感測器,其包括:基底;該基底上的多個電極;以及用於吸附氣相分析物的該基底上的聚合物感測層,該分析物的吸附有效地改變該氣體感測器的性質,從而導致來自該氣體感測器的輸出信號發生變化,其中該聚合物感測層包含選自取代的或未取代的聚伸芳基化物的聚合物,該聚合物包括單體的反應產物,或該反應產物的固化產物,該單體包括包含芳族乙炔基團之第一單體和包含兩個或更多個環戊二烯酮基團之第二單體。
- 如請求項1所述之氣體感測器,其中該聚合物感測層表現出具有0.15或更小的1648至1690cm-1的總峰面積與1480至1522cm-1的總峰面積的比率之FTIR光譜。
- 如請求項2所述之氣體感測器,其中該聚合物感測層表現出具有1.0或更小的2190至2250cm-1的總峰面積與1550至1650cm-1的總峰面積的比率之拉曼光譜。
- 如請求項1或2所述之氣體感測器,其中該聚合物感測層具有藉由X射線光電子能譜法來測量的7原子%或更低之氧含量。
- 如請求項1所述之氣體感測器,其中該聚合物感測層藉由包括以下步驟的過程來形成:塗覆組成物,該組成物包含該第一單體、該第二單體和溶劑;以及在惰性氣體氣氛中在300℃至400℃的溫度下固化所塗覆之組成物。
- 如請求項1所述之氣體感測器,其中該第一單體選自式(1)或式(2)之單體:
- 如請求項1所述之氣體感測器,其中該氣體感測器係聲波氣體感測器、電容型氣體感測器、或電導型氣體感測器。
- 如請求項9所述之氣體感測器,其中該氣體感測器係聲波氣體感測器。
- 一種感測氣相分析物之方法,其包括:(a)提供如請求項1至10中任一項所述之氣體感測器;以及(b)使該聚合物感測層暴露於包含氣相分析物之氣氛中。
- 如請求項11所述之方法,其中,該氣相分析物的吸附有效地改變該氣體感測器的性質,從而導致來自該氣體感測器的輸出信號發生變化。
- 如請求項11所述之方法,其進一步包括按順序進行的如下步驟:(c)將該感測器暴露於第二氣氛中,該第二氣氛有效地減小該感測器中的該氣相分析物之含量;(d)使該氣體感測器的共振頻率恢復至基線頻率;以及(e)使該感測器暴露於包含氣相分析物之第三氣氛中;其中步驟(c)、(d)和(e)之順序進行一次或多次。
- 如請求項11至13中任一項所述之方法,其中該氣相分析物係有機材料。
- 如請求項14所述之方法,其中,該氣相分析物選自苯、甲苯、二甲苯、均三甲苯、乙醇、甲醛、乙醛、丙酮、乙酸、或三烷基胺中的一者或多者。
- 如請求項11至13中任一項所述之方法,其中該氣相分析物係無機材料。
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JP6936900B2 (ja) | 2021-09-22 |
US20200400629A1 (en) | 2020-12-24 |
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US11906493B2 (en) | 2024-02-20 |
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