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TWI660436B - 切晶膜、切晶黏晶膜及半導體裝置之製造方法 - Google Patents

切晶膜、切晶黏晶膜及半導體裝置之製造方法 Download PDF

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Publication number
TWI660436B
TWI660436B TW104109052A TW104109052A TWI660436B TW I660436 B TWI660436 B TW I660436B TW 104109052 A TW104109052 A TW 104109052A TW 104109052 A TW104109052 A TW 104109052A TW I660436 B TWI660436 B TW I660436B
Authority
TW
Taiwan
Prior art keywords
film
die
adhesive
cut crystal
semiconductor wafer
Prior art date
Application number
TW104109052A
Other languages
English (en)
Chinese (zh)
Other versions
TW201539586A (zh
Inventor
木村雄大
三隅貞仁
村田修平
大西謙司
宍戶雄一郎
Original Assignee
日商日東電工股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日東電工股份有限公司 filed Critical 日商日東電工股份有限公司
Publication of TW201539586A publication Critical patent/TW201539586A/zh
Application granted granted Critical
Publication of TWI660436B publication Critical patent/TWI660436B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Laser Beam Processing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
TW104109052A 2014-03-31 2015-03-20 切晶膜、切晶黏晶膜及半導體裝置之製造方法 TWI660436B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-074017 2014-03-31
JP2014074017A JP6312498B2 (ja) 2014-03-31 2014-03-31 ダイシングフィルム、ダイシング・ダイボンドフィルム及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201539586A TW201539586A (zh) 2015-10-16
TWI660436B true TWI660436B (zh) 2019-05-21

Family

ID=54161231

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109052A TWI660436B (zh) 2014-03-31 2015-03-20 切晶膜、切晶黏晶膜及半導體裝置之製造方法

Country Status (4)

Country Link
JP (1) JP6312498B2 (ja)
KR (2) KR102386082B1 (ja)
CN (1) CN104946152B (ja)
TW (1) TWI660436B (ja)

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JP6574685B2 (ja) * 2015-11-12 2019-09-11 日東電工株式会社 ダイシング・ダイボンドフィルム及び半導体装置の製造方法
JP6577341B2 (ja) * 2015-11-13 2019-09-18 日東電工株式会社 積層体および半導体装置の製造方法
JP6662074B2 (ja) * 2016-02-05 2020-03-11 日立化成株式会社 接着フィルム
JP2017183705A (ja) * 2016-03-24 2017-10-05 日東電工株式会社 ダイシングダイボンドフィルム、及び、半導体装置の製造方法
CN107227123A (zh) * 2016-03-24 2017-10-03 日东电工株式会社 切割芯片接合薄膜及半导体装置的制造方法
CN106206397B (zh) * 2016-08-05 2020-02-07 厦门市三安光电科技有限公司 用于半导体器件的薄膜及半导体器件的制作方法
KR102434738B1 (ko) * 2016-10-28 2022-08-22 가부시키가이샤 도교 세이미쓰 워크 분할 장치 및 워크 분할 방법
JP6980680B2 (ja) * 2016-11-02 2021-12-15 リンテック株式会社 ステルスダイシング用粘着シート
JP6877982B2 (ja) * 2016-12-08 2021-05-26 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
KR20180116755A (ko) * 2017-04-17 2018-10-25 닛토덴코 가부시키가이샤 다이싱 다이 본드 필름
JP7017334B2 (ja) * 2017-04-17 2022-02-08 日東電工株式会社 ダイシングダイボンドフィルム
JP7143156B2 (ja) * 2018-04-27 2022-09-28 日東電工株式会社 半導体装置製造方法
JP2019197784A (ja) * 2018-05-08 2019-11-14 株式会社ディスコ レーザー加工装置
JP7084228B2 (ja) * 2018-06-26 2022-06-14 日東電工株式会社 半導体装置製造方法
JP7099547B2 (ja) * 2018-12-28 2022-07-12 昭和電工マテリアルズ株式会社 光硬化性粘着剤の評価方法、ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに半導体装置の製造方法
CN113348533B (zh) * 2019-05-10 2022-06-03 昭和电工材料株式会社 拾取性的评价方法、切晶粘晶一体型膜及其评价方法及分选方法、半导体装置的制造方法

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JP2009164556A (ja) * 2007-12-11 2009-07-23 Furukawa Electric Co Ltd:The ウエハ加工用テープ

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JP4358502B2 (ja) 2002-03-12 2009-11-04 浜松ホトニクス株式会社 半導体基板の切断方法
JP2005191297A (ja) * 2003-12-25 2005-07-14 Jsr Corp ダイシングフィルム及び半導体ウェハの切断方法
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JP4430085B2 (ja) 2007-03-01 2010-03-10 日東電工株式会社 ダイシング・ダイボンドフィルム
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JP2009164556A (ja) * 2007-12-11 2009-07-23 Furukawa Electric Co Ltd:The ウエハ加工用テープ

Also Published As

Publication number Publication date
KR102386082B1 (ko) 2022-04-14
JP6312498B2 (ja) 2018-04-18
CN104946152A (zh) 2015-09-30
TW201539586A (zh) 2015-10-16
CN104946152B (zh) 2022-10-21
KR20150113878A (ko) 2015-10-08
KR20220050110A (ko) 2022-04-22
JP2015198118A (ja) 2015-11-09
KR102493750B1 (ko) 2023-02-06

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