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TWI428967B - 熱機械倒裝晶片接合法 - Google Patents

熱機械倒裝晶片接合法 Download PDF

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Publication number
TWI428967B
TWI428967B TW097144348A TW97144348A TWI428967B TW I428967 B TWI428967 B TW I428967B TW 097144348 A TW097144348 A TW 097144348A TW 97144348 A TW97144348 A TW 97144348A TW I428967 B TWI428967 B TW I428967B
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TW
Taiwan
Prior art keywords
substrate
copper
die
bonding
bumps
Prior art date
Application number
TW097144348A
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English (en)
Other versions
TW200941564A (en
Inventor
Steve X Liang
Original Assignee
Skyworks Solutions Inc
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Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of TW200941564A publication Critical patent/TW200941564A/zh
Application granted granted Critical
Publication of TWI428967B publication Critical patent/TWI428967B/zh

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Description

熱機械倒裝晶片接合法
本發明大致關係於半導體裝置及其製造方法。更明確地說，至少一實施例係有關於倒裝晶片半導體封裝及晶粒接合製程。
大量用於射頻(RF)元件工業的半導體封裝技術係被稱為“倒裝晶片”封裝。倒裝晶片描述將晶粒或“晶片”電連接至封裝載件的方法。不同於使用接合線以將晶粒連接至載件的標準晶片及線封裝，在倒裝晶片封裝中之晶粒與載件間之互相連接係透過導電“凸塊”加以完成，該晶粒係直接放置在表面上。該凸塊晶粒然後“倒裝”並朝下，以凸塊將晶粒直接連接至載件。
倒裝晶片組件製程大致包含三個主要步驟：1)對晶粒作凸塊；2)“朝下”附接被作有凸塊之晶粒至基板或板；及3)底填，其係為在晶粒及基板或板間之開放空間填入以非導電而作機械保護材料。有幾種類型凸塊及作凸塊製程可以用於倒裝晶片裝置。例如，作焊錫凸塊包含將底凸塊金屬化放在接合墊上(例如藉由電鍍、濺鍍或類似技術)，然後沈積焊錫至底凸塊金屬化上。另一類型之倒裝晶片作凸塊係被稱為“電鍍作凸塊”。接合墊係被覆蓋以鎳層至想要的電鍍厚度，形成凸塊的基礎。浸入金層然後加入至鎳凸塊上，以供作保護。黏著作凸塊係為另一倒裝作凸塊製程，其將導電黏劑網印於被放於接合墊上的底凸塊金屬化上。網印黏劑在其固化後作為凸塊。
作金凸塊係為較佳作凸塊製程，因為金材料的單石結構，所以金接合提供較優接合強度。相較於焊錫或其他導電材料，金接合同時也具有較優高頻效能及低電阻。金凸塊可以藉由沈積一層金於想要凸塊位置，或將由另一材料(例如鎳)所作成之墊鍍金，而形成在倒裝晶片晶粒上。使用超音波金至金互連(GGI)製程，具有金凸塊的倒裝晶片係以金接合墊被附接至基板上。
GGI係為熱超音波製程，藉由該製程金凸塊及金接合墊藉由使用一稱為GGI接合器的機器，為在壓力頭下的熱及超音波功率所結合在一起。熱超音波製程連接法係藉由在兩金層間之固相接合所完成。加負載及超音波功率進行的金的擴散(微焊)建立金至金連接成為一接合層，其係為無孔隙及單石。超音波GGI製程具有約±10μm的安裝準確度，並可以可靠地接合晶粒薄至100μm的厚度。然而，GGI製程的缺點為使用昂貴材料金於凸塊及墊上。
金至金熱超音波倒裝晶片組件係為無鉛、低應力法，其加熱通常低於150℃並每凸塊低於100克的負載力。這些特性組合上由金凸塊所提供的良好接合強度及電效能，使得對於很多應用，金至金內連線(GGI)製程有吸引力。然而，如上所討論，金係為昂貴金屬，因為，金凸塊(及提供具有金接合墊的基板)係遠較焊錫凸塊為貴。
銅柱凸塊由於下述理由而有優於焊錫凸塊同時也因為其較便宜而優於金凸塊的一種製程及結構。然而，傳統銅-錫倒裝晶片結合具有銅柱凸塊的倒裝晶片需要一組裝製程，其在傳統上係包含分開步驟的晶粒/助焊劑置放、焊錫迴焊及助焊劑清洗。在傳統銅-錫倒裝晶粒接合製程中，晶圓被首先浸入助焊劑中並放置在基板上，其後，一分離迴焊製程在晶圓與基板間形成連接。最後，晶圓與基板在另一步驟中被清洗，以移除助焊劑。此組裝製程顯著地增加了元件的製造成本，侵蝕使用銅-錫接合來替代GGI製程所完成的節省的多數成果。因此，傳統晶粒接合製程，不論是GGI製程或銅-錫接合均忍受若干缺點。因此，至少部份態樣及實施例係有關於一單一步驟無助焊劑的晶粒接合製程，其加入柱凸塊，並提供低成本及銅柱凸塊良好效能及更簡單組裝製程的優點。
一實施例係有關於接合晶粒的方法，其包含至少一銅柱凸塊，以接合至具有對應至少一墊的基板，該銅柱凸塊包含銅部份及接合蓋。在此實施例中，該方法包含將晶粒定位在基板上，使得至少一鍋柱凸塊的接合蓋接觸至少一墊，並施加熱及機械能量至該至少一銅柱凸塊，以接合晶粒至該基板。在一實施例中，定位該晶粒並施加熱及機械能可以大致被同時執行。在另一實施例中，接合蓋可以為焊錫蓋，及施加熱及機械能包含施加足夠熱及機械能以至少部份熔化該焊錫蓋，以將晶粒接合至該基板。在另一例子中，施加熱及機械能包含施加超音波能至該至少一銅柱凸塊，同時，施加機械壓力以將晶粒壓向基板。該方法也包含在施加超音波能及機械壓力前，預熱該晶粒及/或該基板。
依據另一實施例，製造半導體裝置的方法包含：在一晶圓上形成多數銅柱凸塊，多數銅柱凸塊的各銅柱凸塊包含一銅部份及一接合蓋；將該晶圓單片化為多數晶粒，各晶粒包含該多數銅柱凸塊的至少一鍋柱凸塊；將多數晶粒定位在一基板上；及將多數晶粒熱超音波接合至該基板上。在一例子中，基板可以包含多數導電墊(例如包含如銅、金、鎳等之金屬)，並將多數晶粒定位在基板上包含將多數晶粒定位，使得多數柱凸塊的各個銅柱凸塊的接合蓋接觸多數導電墊的個別導電墊。在另一例子中，接合墊包含一焊錫蓋及熱超音波接合該多數晶粒至該基板包含施加熱能量至多數銅柱凸塊，以至少部份熔化該焊錫蓋。在另一例子中，熱超音波將多數晶粒接合至基板包含施加超音波能至多數銅柱凸塊並施加機械壓力以將多數晶粒壓至基板。在另一例子中，熱超音波接合多數晶粒至基板包含預熱多數晶粒，隨後施加超音波能及機械壓力以接合多數晶粒至該基板。該方法更包含至少部份以覆蓋模化合物來覆蓋多數晶粒。
另一實施例係有關於一種將倒裝晶片晶粒接合至一基板的方法，該倒裝晶片晶粒包含多數銅柱凸塊，該等多數銅柱凸塊的各個銅柱凸塊包含一銅部份附接至該晶粒及一接合蓋附接至該銅部份。在此實施例中，該方法更包含將該晶粒定位在該基材，使得該多數銅柱凸塊的各個銅柱凸塊接觸對應在該基材的多數接合墊的對應接合墊，並熱超音波接合該晶粒至該基板。在一例子中，接合蓋包含一焊錫蓋，並熱超音波接合該晶粒至該基板包含施加熱及機械能至該晶粒，以至少部份熔化該焊錫蓋以形成在該多數銅柱凸塊與在基板上的多數接合墊的對應多數接合墊間之接合。施加熱及機械能可以包含例如施加超音波能量及施加機械壓力以將該晶粒壓至該基板。熱超音波接合可以選用地包含預熱該晶粒及/或該基板。這些動作可以個別或實質同時執行。
這些例示態樣及實施例及其他態樣、實施例、及優點係被討論如下。再者，應可以了解的是，前述資訊及以下詳細說明係為實施例之各種態樣的例示例子，並想要提供對主張態樣及實施例的本質及特性的整個架構的了解。附圖係想要提供對各種態樣及實施例的顯示及進一步了解，並加入此說明書中。附圖及說明書的其他部份係作用以解釋於此所述及主張態樣及實施例的原理及操作。
至少一實施例之各態樣係參考附圖加以說明如下。在這些未依規格繪出的圖中，各個相同或接近相同元件係以相同元件符號表示。為了清楚起見，在每一圖中並未將每一元件作標示。這些圖係用作顯示及解釋目的，並不用以限制本發明之申請專利範圍。
至少部份態樣及實施例係有關於倒裝晶片晶粒接合技術與製程，及其所製造之裝置。如上所討論，傳統倒裝晶片至基板內連線銅-錫接合法需要不想要的多步驟組裝製程。雖然金至金內連線(GGI)製程可能較簡單及清潔，但金較昂貴，因此，仍不想要使用金凸塊晶粒。依據本發明之至少部份態樣，一倒裝晶片接合法可以包含一熱超音波晶粒接合製程，其中熱及超音波能量可以在壓力下施加，以完成於晶圓上之銅柱凸塊與基板的導電墊間之接合。如上所討論，熱接合係使用於GGI黏結中，以形成在金凸塊晶粒與基材的金墊間之純金接合。然而，這些金接合為均質的，並且，金被認為很軟的可鍛金屬，不像很多焊錫合金，特別是無鉛焊錫合金，它們是相當地脆。意想不到的是，已經發現熱超音波製程可以成功地施加至銅柱凸塊上，而不管該銅柱凸塊包含異質材料及甚至使用無鉛焊錫。熱超音波晶粒接合方法的各種態樣及實施例將參考附圖加以說明。
要了解的是，於此所討論的方法與設備的實施例並不限於以下說明中所說明或附圖中所示的元件配置與結構的細節。該些方法與設備可以以其他實施例加以實現並能以各方式加以執行。於此提供特定實施例供例示用途並不用限制。明確地說，配合任一或多數實施例所討論的元件及特性並不想要排除在其他實施例的類似元件。同時，於此所用之片語或專有名詞係為說明目的並不作限定用。於此所用之“包括”、“包含”、“含有”、“涉及”及其變化係包含於此所述之各項目及其等效，以及其他項目。
製造半導體裝置的製程與方法例的流程圖係顯示於圖1。製程的態樣與實施例係參考圖1加以說明如下。
依據一實施例，生產半導體裝置的製程可以包含如圖1中之步驟100所示之在作晶圓凸塊製程中，附接“凸塊”至半導體晶圓。參考圖2，顯示一半導體晶圓200的例子。該晶圓可以包含一晶粒220及墊202，該等墊附接有凸塊，以允許晶圓100被倒裝安裝晶片至基板，如下所討論。應了解的是，在該至少一實施例中，作凸塊的整個製程可以在晶圓階段完成，因此，晶圓200可以包含多數晶粒220。有凸塊晶圓然後被單片化(在圖1的步驟102)成為個別倒裝晶片，以如下所討論安裝在板或基板上。或者，作凸塊的製程可以在晶片階段完成，例如當包含多數晶粒(或多數模組，各模組包含兩或更多晶粒)的晶圓已經被單片化至個別晶片，及每一晶片可以被個別作凸塊。因此，應了解的是，於此所用之配合上晶圓200的“晶圓”係想要包含所有及任一半導體晶圓，其上具有多數晶粒或模組、個別晶粒、或由至少兩晶粒組成的個別模組。再者，於此所用之名詞“晶粒接合”(及類似片語)係使用以表示晶圓(其包含至少一晶粒)接合至該基板。
在一實施例中，作晶圓凸塊(步驟100)可以包含執行作銅柱凸塊製程。參考圖3，顯示具有銅柱凸塊204附接至墊202上的晶圓200的一例子。銅柱凸塊204包含兩部份：一銅柱206及一接合蓋208。在一例子中，接合蓋為焊錫蓋，及柱206為圓柱形。然而，應了解的是，本發明並不限於此，接合蓋208可以包含焊錫以外之材料，例如金、及銅柱206可以圓柱以外之形狀。銅柱凸塊在多個理由上可以優於純焊錫凸塊。由於銅相較於焊錫合金具有較大導電率，所以銅柱凸塊典型提供一具有改良熱特徵的較佳電連接。另外，由於銅圓柱之故，所以銅柱凸塊可以較相同高度的球焊錫凸塊為窄，因此，銅柱凸塊可以完成較細的連接柵。因此，依據本發明態樣的接合裝置與銅柱凸塊的方法並不需要傳統銅錫接合製程有關的多步驟組裝及清潔程序，所以較優。
仍參考圖3，在一例子中，銅柱206可以大約60至70微米(μm)高。在很多應用中，想要提供無鉛或至少最少量的鉛之“綠”元件。因此，在至少部份例子中，接合蓋208可以包含無鉛焊錫合金或例如金的金屬。在此時，如果接合蓋包含焊錫，則焊錫合金可以具有高錫含量。或者，接合墊208可以包含共晶錫鉛焊錫。為了製造銅柱凸塊204，作凸塊步驟100可以包含兩階段電鍍製程，其中銅柱206係被電鍍至墊102上，及接合蓋208係被沈積至銅圓柱206的頂部。
如上所述，在至少一實施例中，在銅柱凸塊204被附接至晶圓200後，晶圓200可以被單片化(圖1的步驟102)分成個別晶粒216，其可以被倒裝晶片安裝至一基板上。晶圓可以被單片化，使得每一個別晶粒可以包含至少一或更多的銅柱凸塊。
參考圖4，顯示基板例子的一部份。基板210可以包含導電墊212，其上可以附接晶圓(或單片晶粒)的銅柱凸塊。在一例子中，基板210可以是一傳統積層基板，如FR4，具有金加工，使得墊212係由金形成(或至少鍍金)。然而，墊也可以包含導電材料或金以外之金屬，例如銅、銀、鈀、或焊錫。在接合晶粒至墊212之前，金墊212可以使用熟習於本技藝者所知的電漿清洗製程加以清洗。此清洗可以為備製基板以作接合的步驟104(見圖1)的一部份。備製步驟104可以包含沈積一介電層(例如焊錫遮罩)214。應了解的是，雖然圖1中，步驟104係被顯示為在步驟100及102之後，但本發明並不如此限制，步驟104可以執行於接合前的任意時間(即步驟106)。
下一步驟106可以包含接合一或(來自切片晶圓200之)更多晶粒至基板210。參考圖5，顯示已經準備用以接合至基板210上的倒裝晶片晶粒216(具有上述之銅柱凸塊204)的例子。依據一實施例，接合步驟106可以包含熱機械晶粒接合製程，其中熱及機械能係被用以完成在晶粒216與基板210間之連接。例如或類似傳統GGI接合的機器可以用以施加熱及機械能。例如，基板210及晶粒216可以放置在接合機器的壓力頭中(如在GGI製程中所進行者)。機器可以被控制以施加熱能以熔化銅柱凸塊204的焊錫蓋208，同時，壓力頭施加機械能以將晶粒216加壓至基板210上。熱及機械能的組合可以足夠使接合蓋208變形，以使得銅柱凸塊接合至基板210上的導電墊212並完成晶粒216的連接至基板210上。例如，如果接合蓋208係為焊錫蓋，則足夠熱能量與機械壓力的組合係被施加以部份地熔化該焊錫蓋208，以將銅柱凸塊接合至基板210的導電墊212。
在一實施例中，晶粒可以被預熱，例如，軟化焊錫蓋208所用之焊錫。基板210可以被加熱，以加強接合。接合機可以然後施加超音波能，同時，加壓頭機械地將晶粒壓至基板上。在接合蓋208為焊錫蓋的例子中，超音波能配合上接合機的壓力頭所供給的壓力可以作為定位機械迴焊製程，以熔化焊錫蓋208，以在晶粒216與基板210間形成永久連接。熱超音波接合製程可以以單一步驟完成晶粒接合至基板上，而不像傳統製程般地需要分開備製、迴焊及清洗步驟。另外，依據本發明實施例之熱超音晶粒接合係為低助焊劑製程，因此，完成最小污染。這係特別有於例如主體音響波(BAW)或其他MEMS裝置元件的製造，這些元件對於助焊劑殘渣的污染係很敏感。
在一例子中，在具有銅柱凸塊的晶粒與具有金墊的基板間完成了成功的接合。在此例子中，一純錫焊錫係被使用於焊錫蓋208。在接合前，基板的金墊係使用電漿清潔製程加以清洗。使用來自Panasonic的PSX303電漿清洗機。該機器使用氫氣作清洗，以600瓦的操作功率及20Pascals的氣壓。氬氣被以每分5毫升的流率供給至基板墊持續30秒。約12牛頓的壓力係被使用作接合，以約半瓦的超音波功率。約260℃的溫度係被使用以熔化純錫焊錫，及接合時間係約0.3秒。應了解的是，用於銅柱凸塊需要不同溫度、壓力及/或超音波能量，其具有一焊錫合金而不是純錫，及本發明並不限於使用純錫焊錫。在接合後，晶粒及基板受到晶粒剪力測試，以測試形成在晶粒與基板間之熱機械形成之接合的機械整體性。每銅柱凸塊的平均晶粒剪力約43克。可以看出故障點係在錫焊錫。
再次參考圖1，在晶粒被接合至基板後，該單元可以進一步處理，以完成元件的封裝(步驟108)。此進一步處理可以包含底填及覆蓋成型，如同傳統倒裝晶片裝置所完成者，並對晶粒形成連接，或者，將球柵陣列(或其他連接結構)附接至基板。參考圖6，顯示接合至基板210的晶粒216例子，及有覆蓋成型化合物218施加在晶粒216上。可以看出接合蓋208為接合製程所變形(例如當焊錫蓋被使用時，焊錫被熔化，因而改變形狀)，以被接合至基板210的墊212上。
如上所討論，傳統銅錫晶粒接合製程需要幾個，典型分開的組裝步驟，包含助焊劑沈積、焊錫迴銲、及助焊劑清洗，而對傳統使用銅錫晶粒接合增加了成本及不便性。相反地，依據本發明實施例之熱機械晶粒接合製程係為無助焊劑製程，其具有簡單製程流程並低組裝成本。在至少一實施例中，熱及機械能量可以在將晶粒放置在基板上時被施加，促成單一步驟的晶粒接合製程。
已經描述至少一實施例的幾個態樣，應了解的是，各種變化、修改及改良可以迅速為熟習於本技藝者所了解。例如，充電電流(及充電功率)可以根據最大可允許輸入電流及最大可允許電池充電電流以外的輸入加以調整。此等變化、修改及改良係在本案的一部份並想要在本發明之範圍內。因此，前述說明及繪圖只作例示用，本發明之範圍應為隨附之申請專利範圍及其等效的適當結構所決定。
200．．．晶圓
202．．．墊
204．．．銅柱凸塊
206．．．銅柱
208．．．接合蓋
210．．．基板
212．．．導電墊
214．．．介電層
216．．．晶粒
218．．．覆蓋成型化合物
220．．．晶粒
圖1為依據本發明態樣的製程例的流程圖；
圖2為一晶圓例的剖面圖；
圖3為具有銅柱凸塊附接至其上的圖2的晶圓的剖面圖；
圖4為一電鍍基板例的剖面圖；
圖5為依據本發明態樣的接合至圖4的電鍍基板的晶粒的剖面圖；及
圖6為具有覆蓋成型及底填的圖5之結構的剖面圖。
218．．．覆蓋成型化合物
216．．．晶粒
202．．．墊
206．．．銅柱
208．．．接合蓋
212．．．導電墊
220．．．晶粒
210．．．基板

Claims (15)

  1. 一種將包含至少一銅柱凸塊(204)的一晶粒接合至具有對應至少一墊(212)的一基板(210)的方法，該銅柱凸塊包含一銅部份(206)及一接合蓋(208)，該方法包含：定位該晶粒於該基板上，使得該至少一銅柱凸塊的該接合蓋接觸該至少一墊；及當施加機械壓力以將該晶粒壓向該基板上時，對該至少一銅柱凸塊施加超音波能，該超音波能與該機械壓力之組合用以融化該接合蓋以形成該晶粒及該基板之間的一永久連接。
  2. 如申請專利範圍第1項所述之方法，其中該接合蓋包含焊錫蓋。
  3. 如申請專利範圍第2項所述之方法，其中施加該超音波能及該機械壓力包含施加足夠熱及機械能，以至少部份熔化該焊錫蓋，以將該晶粒接合至該基板。
  4. 如申請專利範圍第1項所述之方法，其進一步包含在施加該超音波能及該機械壓力之前，預熱該晶粒。
  5. 如申請專利範圍第1項所述之方法，其進一步包含在施加該超音波能及該機械壓力之前，預熱該基板。
  6. 如申請專利範圍第1項所述之方法，其進一步包含將複數個晶粒接合至該基板，該方法包含：藉由在一晶圓上形成複數個銅凸塊而提供該等晶粒，該複數個銅柱凸塊的各個銅柱凸塊包含一銅部份及一接合蓋；及將該晶圓單片化成複數個晶粒，各個晶粒包含該複數個銅柱凸塊的至少一銅柱凸塊。
  7. 如申請專利範圍第6項所述之方法，其中該基板包含複數個 導電墊，該方法進一步包含：定位該基板上之該複數個晶粒，使得該複數個銅柱凸塊的各個銅柱凸塊的該接合蓋接觸該複數個導電墊的一對應導電墊。
  8. 如申請專利範圍第7項所述之方法，其中各個銅柱凸塊的該接合蓋包含一焊錫蓋。
  9. 如申請專利範圍第8項所述之方法，其中施加該超音波能及該機械壓力包含施加足夠熱能及機械能至該複數個銅柱凸塊，以至少部份熔化該焊錫蓋。
  10. 如申請專利範圍第7項所述之方法，其中當施加該機械壓力時施加該超音波能係包含施加超音波能至該複數個銅柱凸塊並施加機械壓力以將該複數個晶粒壓向該基板。
  11. 如申請專利範圍第1項所述之方法，其中該晶粒係包含複數個銅凸塊之一覆晶晶粒，該複數個銅凸塊之每一銅凸塊包含附接至該晶粒之一銅部分以及附接至該銅部分之一接合蓋；及定位該基板上之該晶粒係包含定位該晶粒使得該複數個銅凸塊之每一銅凸塊之該接合蓋接觸該基板上之複數個接合墊之一各別對應接合墊。
  12. 如申請專利範圍第6項所述之方法，其進一步包含以一二次成型化合物至少部分覆蓋該複數個晶粒。
  13. 如申請專利範圍第11項所述之方法，其中該接合蓋包含焊錫蓋。
  14. 如申請專利範圍第13項所述之方法，其中當施加該機械壓力時施加該超音波能係包含施加足夠熱能及機械能至該晶粒， 以至少部份熔化該焊錫蓋，以形成該複數個銅柱凸塊與在該基板上相對應之複數個接合墊之間的接合。
  15. 如申請專利範圍第11項所述之方法，其進一步包含預熱該晶粒與該基板的至少之一者，及隨後當施加機械壓力以將該晶粒壓向該基板時，施加該超音波能至該複數個銅柱凸塊。
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