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TWI380428B - - Google Patents

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Publication number
TWI380428B
TWI380428B TW097110927A TW97110927A TWI380428B TW I380428 B TWI380428 B TW I380428B TW 097110927 A TW097110927 A TW 097110927A TW 97110927 A TW97110927 A TW 97110927A TW I380428 B TWI380428 B TW I380428B
Authority
TW
Taiwan
Prior art keywords
layer
forming
copper core
substrate
core substrate
Prior art date
Application number
TW097110927A
Other languages
English (en)
Other versions
TW200921881A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW200921881A publication Critical patent/TW200921881A/zh
Application granted granted Critical
Publication of TWI380428B publication Critical patent/TWI380428B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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Description

1380428 九、發明說明·· 【發明所屬之技術領域】 本發明係有關於-種高散熱性封裳基板 法，尤指-種以銅核基板為基礎，開始製作増 基板之製作方法，於其中，該封農基板之 一厚銅蝕刻置晶接墊、一增層線路 糸匕括 接腳接墊。 < 及表側複數個電性 【先前技術】 在一般多層封裝基板之製作上，其製作方式通常 係由-核心基板開始，經過鑽孔 '電錢金屬、 雙面線路製作等方式，完成一 ^及 一線路增層製程完成-多層封裝基 示，其係為一有核層封裝基板之剖 ,=二準備一核心基板6◦，其中，該核 此η ^主 厚度層6 ◦ 1及形成於 :層=01表面之線路層6 〇 2所構成，且該芯層 0 1中_成有複數個電鍍導通 連譲層6〇1表面之線路層6〇2〇3 了措 β η -著帛2 2圖〜第2 5圖所示，對該核心基板 ^貫施線路增層製程。首先，係於該核心基板60 面第—介電層6 1 ’且該第-介電層6 1表 數個第—開σ62，以露出該線路層6 ^以無電電鍍與電鍍等方式於該第一介電 5 1380428 層6 1外露之表面形成一曰 6 3上形成-圖案化阻層6 4 :且=並於該晶種層 中並有複數個第二開口 6 s，、，、圖案化阻層6 4 化線路之晶種層6 3 ;接#二露出部份欲形成圖案 二開口 65中形上用電錄之方式於該第 導電盲孔67，並使並第·宏路層66及複數個 亚便八第一圖案化線路 過該複數個導電盲孔67與該核心二6:以透 6 0 2做電性導通、秋後再 二板6 ◦之線路層 .. ，、更再進仃移除該圖案化阻層6 4，、钱刻，待完成後係形成一第 取第線路增層結構6 a。 同樣地’该法係可於該第一線路增層結構&之最外 層表面再運用相同之方式形成一第二介㈣6 8及一 第二圖案化線路層6 9之第二線路增層結構6 b，以逐 步增層方式形成-多層封裝基板。然而，此種製作方 法有佈線密度低、層數多及流程複雜等缺點。 另外，亦有利用厚銅金屬板當核心材料之方法， 可於經過蝕刻及塞孔等方式完成一内層核心板後，再 經由一線路增層製程以完成一多層封裝基板。如第2 6圖〜第2 8圖所示，其係為另一有核層封裝基板之 剖面示意圖。首先，準備一核心基板7 〇，該核心基 板7 0係由一具預定厚度之金屬層利用蝕刻與樹脂塞 孔7 0 1以及鑽孔與電鍍通孔7 〇 2等方式形成之單 層銅核心基板7 0 ;之後’利用上述線路增層方式， 於该核心基板70表面形成一第一介電層及一第 一圖案化線路層7 2 ’藉此構成一具第一線路增層結 6 1380^28 择屏方/ ^亦與上述方法相同’係可再利用—次線路 成曰二第’：該第—線路增層結構7 a之最外層表面形 2構】I:層73及—第二圖案化線路層74，藉 1”：具第二線路增層結構”，以逐步增層方式形 裝基板。然而，此種製作方法不僅其銅核 戶：P不易’且亦與上述方法相同，具有佈線密 :用者二Γ复雜等缺點。故，一般習用者係無法符合 使用者於實際使用時之所需。 【發明内容】 本發明之主要目的係在於，使用本發明高散熱性 ^裝基板之製作方法’係可有效達到改善傳統基板散 熱問題、及簡化傳統增層線路板製作流程之目的。 本發月之人要目的係在於，從一銅核基板為基礎 ，開始製作之增層封裝基板。其結構係包括—厚銅餘
刻置晶㈣一增層線路及_複數個電性接腳接墊 。於其中’厚銅置晶接墊與電性接腳接墊係由銅核基 板之兩面分別關而成，而增層線路則由壓合或貼合 之介電層上所形成。 σ 本發明之另-目的係、在於，製作厚純刻置晶接 墊時能具選擇性地保留位於置晶位置下方之厚銅，以 有效地提供元件散熱之所需，同時，並可以高密度增 層線路提供電子元件相連時所需之繞線，使本‘ 具有咼密度增層線路結構下，亦可同時使晶片能與厚 7 1380428 銅金屬接墊直接結合。 為達以上之目的，本發明係一種高散熱性封裝基 板之製作方法，係先以光學微影及蝕刻之方式於一銅 . ㈣板之第—面上形成複數個第-凹槽，藉以突顯一 置晶接塾’並於該置晶接塾位置之四週形成—增層線 路。接著再於該銅核基板之第二面以相同方式禎 數個第二凹槽，以突顯複數接腳之一部分，最後係填 • 入電性阻絕材料以形成一球側電性連接墊。其中，該 '曰層線路由置晶接塾位置之邊緣向四周延伸，以提供 電子元件相連時所需之繞線，並以複數個電鍍盲孔與 電性接腳接墊導通連接。 〃 【實施方式】 *清士閱『第1圖』所示’係分別為本發明之製作 流程示意圖。如圖所示：本發明係一種高散熱性封裝 • 基板之製作方法，其至少包括下列步驟·· (A)提供銅核基板i丄：提供一銅核基板； (B )形成第一、二阻層及複數個第一開口丄2 . 分別於該銅核基板之第一面上形成一第一阻層，以及 於該銅核基板之第二面上形成一完全覆蓋狀之第二阻 層，’於其中’並以曝光及顯影之方式在該第一阻層上 形成複數個第一開口’以顯露其下該銅核基板之第一 面； » (c)形成複數個第一凹槽上3 •以钱刻之方式 8 1380428 移除該複數個第—開口下方之部分厚銅，並形成複數 個第一凹槽於該銅核基板之第一面上； (D)形成具有複數個置晶接墊之銅核基板1 4 : • 以剝離之方式移除該第一阻層及該第二阻層，形成具 有複數個置晶接墊之銅核基板； (E )形成第一介電層及第一金屬層丄5 :於該 銅核基板之第-凹槽上直接壓合一第一介電層及一第 φ 金屬層，並顯露該銅核基板第一面上用以定義置晶 位置之複數個置晶接墊，於其中，該銅核基板之第— 凹槽上亦可先採取貼合該第一彳電層&，再形成該第 一金屬詹； (F)形成第三、四阻層及複數個第二開口 1 6 : 二別於忒鋼核基板之第一面上形成一完全覆蓋狀之第 三阻層，以及於該銅核基板之第二面上形成一第四阻 層，於其中，並以曝光及顯影之方式在該第四阻層上 籲職複數個第二開口，以顯露其下該銅核基板之第二 面； …（G )形成複數個第二凹槽i 7 :以蝕刻之方式 於複數個第二開口表面形成複數個第二凹槽’並顯露 1玄複數個第二開口下方之第-介電層； (Η )形成具複數個柱狀接腳之銅核基板〗8 : 以剝離之方式移除該第三阻層及該第四阻層，並形成 具複數個柱狀電性接腳接墊之銅核基板； (I )形成第一電性阻絕層i 9 :以直接壓合、 9 印刷或喷塗之方式於複數個第二凹槽内形成一第一電 性阻絕層，並顯露球側複數個電性接腳接墊； (J )形成複數個第三開口 2 〇 :以雷射鑽孔之 方式於該第一金屬層與該第一介電層上形成複數個第 二開口，並顯露球側複數個電性接腳接墊，其中，複 數個第三開π係可先做開銅窗（CQnfQ職丨Mask )後， 再、’·里由雷射鑽孔之方式形成，，亦或係以直接雷射鑽孔 (LASER Direct)之方式形成； (K)形成第五阻層21:於該銅核基板之第二 面上形成一第五阻層； (L)形成第二金屬層2 2 :以無f電鑛與電鑛 之方式於複數個第三開口中、第一金屬層、第一介電 層及複數個置晶接墊上形成一第二金屬層； 笼」Γ移除第五阻層23 :以剝離之方式移除該 弟五阻層；
成第/、、七阻層及複數個第四 分別於該第二金屬声 μ拉“ W上形成-第六阻層，以及於該资 .,廿 上形成一元全覆蓋狀之第七阻層，灰 ，、中並以曝光及顯影之方 數個第四開口，以龜•甘丁、㈣第"阻層上形成相 】 以顯路其下之第二金屬層； (〇)移除顯露第一、-全眉 方式移除該第四開σ下方二金屬層25:以敍刻之 層； 下方之第二金屬層及第一金屬 成/、有複數個球側電性接腳接墊及厚銅 蝕刻置晶接墊之增層線路基板2 6:以剝離之方式移 除該第六阻層及該第七阻層，並形成一第一線路層。 至此，元成一具有複數個球側電性接腳接墊及厚銅钱 刻置晶接墊之增層線路基板，並直接進行步驟（Q 以及 ’ (Q)進行置晶側線路層與球側電性接腳接墊之 製作2 7 :於該增層線路基板上進行一置晶側線路層 與球側電性接腳接墊之製作，於其中，在該第一線路 層表面形成一第一防焊層，並以曝光及顯影之方式於 該第一防焊層上形成複數個第五開口，以顯露線路增 層結構作為電性連接墊之部分，最後，分別於複數個 第五開口上形成一第一阻障層，以及於複數個電性接 腳接墊上形成一第二阻障層。至此，完成一具有完整 圖案化之置晶側線路層與球側電性接腳接墊之封裝基 板，其中，該第一防焊層係以印刷、旋轉塗佈或喷塗 所為之高感光性液態光阻；該第一、二阻障層係可為 電鍍鎳金、無電鑛鎳纪金、電鑛銀或電鍍錫中擇其一。 於其中’上述該第--七阻層係以貼合、印刷或 旋轉塗佈所為之乾膜或溼膜之高感光性光阻；該第一 介電層及該第一電性阻絕層係可為防焊綠漆、環氧樹 脂絕緣膜（Ajinomoto Build-up Film, ABF)、笨環丁稀 (Benz0CyCl0-buthene，BCB )、雙馬來亞醯胺·三氮雜 本樹脂（Bismaleimide Triazine，BT )、環氧樹脂板 (FR4、FR5 )、聚醯亞胺（p〇iyimide，PI )、聚四氣乙 烯（Poly(tetra-floroethylene)，PTFE)或環氧樹脂及玻 璃纖維所組成之一者。 請參閱『第2圖〜第1 7圖』所示，係分別為本 發明一實施例之封裝基板（一）剖面剖面示意圖、本 發明一實施例之封裝基板（二）剖面示意圖、本發明 一實施例之封裝基板（二）剖面不意圖、本發明__實 施例之封裝基板（四）剖面示意圖、本發明一實施例 之封裝基板（五）剖面示意圖、本發明一實施例之封 裝基板（六）剖面示意圖、本發明一實施例之封裝基 板（七）剖面示意圖、本發明一實施例之封裝基板（八） 剖面示意圖、本發明一實施例之封裝基板（九）剖面 示意圖、本發明一實施例之封裝基板（十）剖面示意 圖、本發明一實施例之封裝基板（十一）剖面示意圖、 本發明一實施例之封裝基板（十二）剖面示意圖 '本 發明一實施例之封裝基板（十三）剖面示意圖、本發 明一貫施例之封裝基板（十四）剖面示意圖、本發明 一實施例之封裝基板（十五）剖面示意圖、及本發明 一實施例之封裝基板（十六）剖面示意圖。如圖所示： 本發明於一較佳實施例中，係先提供一銅核基板3 〇 a，並分別於該銅核基板3 〇a之第一面上貼合一高感 光性高分子材料之第一阻層3 1，以及於該銅核基板 3 〇a之第二面上貼合一高感光性高分子材料之第二 阻層3 2，並以曝光及顯影之方式在該第一阻層3工 上形成複數個第一開口 3 3，以顯露其下該銅核基板 -入萝“第面而其第二面上之第二阻層3 2則為 凡王i盍狀。接著以蝕刻之方式移除複數個第一開口 3 3下方之部分厚銅，以形成複數個第一凹槽3 4於 έ:銅核基板3 〇 a之第一面上，之後係移除該第一、 一阻層，形成具有複數個置接晶墊3 5之銅核基板3 〇b其中，该銅核基板係為一不含介電層材料之厚銅 板；該f一、二阻層3丄、3 2係為乾膜光阻層。 接著，於具有複數個置晶接墊3 5之銅核基板3 b第一面上壓合一第一介電層36及一第一金屬層 ^ 7，並顯露該銅核基板3 Ob第一面上用以定義置 晶位置之複數個置晶接墊3 5，隨後分別於該銅核基 板3 〇 b之第一面上貼合一高感光性高分子材料之第 二阻層3 8，以及於該銅核基板3 〇b之第二面上貼 合一高感光性高分子材料之第四阻層3 9，並以曝光 及·’’’員〜之方式於該第四阻層3 9上形成複數個第二開 4 ◦以顯露其下該銅核基板3 〇b之第二面，而 其第面上之第三阻層3 8則為完全覆蓋狀。接著以 姓J之方式製作一第二凹槽4 1，並移除該第三、四 阻層，形成具有複數個柱狀電性接腳接墊4 2之銅核 基板3 0 c ’隨後，印刷一第一電性阻絕層4 3於該第 凹奴4 1中，以顯露出球側複數個電性接腳接墊4 2。之後再以雷射鑽孔之方式於該第一金屬層3 7與 5亥第一介電層3 β上形成複數個第三開口 4 4，接著 並於。亥銅核基板3 〇c之第二面上貼合一高感光性高 13 1380428 分子材料之第五阻層4 5，並以無電電鍍與電鍍之方 式於複數個第三開口44中、第一金屬層37、第一 介電層3 6及複數個置晶接墊3 5上形成一第二金屬 層4 6 ’之後移除該第五阻層。其中，該第一、二金 屬層3 7、4 6皆為銅；該第一電性阻絕層4 3係為 • 防焊綠漆。 接著，分別於該第二金屬層4 6上貼合一高感光 # 性高分子材料之第六阻層4 7，以及於該銅核基板3 Oc之第二面上貼合一高感光性高分子材料之第七阻 層48，並以曝光及顯影之方式於該第六阻層47上 形成複數個第四開口 4 9，以顯露其下之第二金屬層 4 6。最後係以蝕刻之方式移除該第四開口 4 9下^ 第-、二金屬’並再移除該第六、七阻層，以形成 -第-線路層50。至此’完成一具有複數個球側電 性接腳接塾及厚銅姓刻置晶接墊之增層線路基板3。 •請參閱『第18圖〜第20圖』所示，係分別為 本發明一實施例之封裝基板（十七）剖面示意圖、_ 發明-實施例之封裝基板（十八）剖面示意圖及本發 明一實施例之封裝基板（十九）剖面示意圖。如圖所 不：在本發明較佳實施例中，係接著進行置晶側線路 層與球側電性接腳接塾之製作。首先於該第―線路層 5 ◦表面塗覆一層絕緣保護用之第—防焊層5丄，並 以曝光及顯影之方式於該第一防焊層5 ^形成複= 個第五開口5 2，以顯露線路增層結構作為電性連接 14 1380428 堅°最後’分別於複數個第五開口 5 2上形成一第一 阻障層5 3 ’以及於球側複數個電性接腳接墊4 2上 形成一第二阻障層5 4。至此，完成一具高散熱性之 封裝基板5，其中，該第一、二阻障層53、54皆 為錦金層。 由上述可知，本發明係從銅核基板為基礎，開始 製作之增層封裝基板，其結構係包括一厚銅蝕刻置晶 接墊、一增層線路及球側複數個電性接腳接墊。於其 中，厚銅置晶接墊與電性接腳接墊係由銅核基板之兩 面分別蝕刻而成，而增層線路則由壓合或貼合之介電 層上所形成。該增層線路由置晶接墊位置之邊緣向四 周延伸，以提供電子元件相連時所需之繞線，並以複 數個電鍍盲孔與電性接腳接墊導通連接，其中，由於 該電性接腳接墊可保留置晶接墊位置下方之厚銅，以 提供置晶接墊之穩定結構及良好之散熱效果。因此， 本發明封裝基板之特色係在於，製作厚銅蝕刻置晶接 墊時能具選擇性地保留位於置晶位置下方之厚銅，以 有效地提供元件散熱之所需，同時，並可以高密度增 層線路提供電子元件相連時所需之繞線，使本發明^ 具有高密度增層線路結構下’亦可同時使晶片能與厚 銅金屬接墊直接結合。藉此，使用本發明高散熱性封 裝基板之製作$法’係、可有效達到改善傳統基板散熱 問題'及簡化傳統增層線路板製作流程之目的。… 綜上所述，本發明係一種高散熱性封裝基板之製 15 作方法，可有效改善習用之種種缺點，利用製作厚銅 钱刻置晶接墊時所選擇性地保留位於置晶位置下方之 厚銅’可使晶片能與厚銅金屬接墊直接結合，以有效 • 地提供元件散熱之所需，同時並可以其高密度增層線 路提供電子元件相連時所需之繞線，因此可有效達到 改善傳統基板散熱問題、及簡化傳統增層線路板製作 ML程之目的，進而使本發明之産生能更進步、更實用、 • 更符合使用者之所須，確已符合發明專利申請之要 件，爰依法提出專利申請。 每惟以上所述者，僅為本發明之較佳實施例而已， 當^能以此限定本發明實施之範圍；故，凡依本發明 申4專利範圍及發明說明書内容所作之簡單的等效變 化與修飾，皆應仍屬本發明專利涵蓋之範圍内。 1380*428 【圖式簡單說明】 第1圖，係本發明之製作流程示意圖。 第2圖’係本發明一實施例之封裝基板（一）剖面示 意圖。 第3圖’係本發明一實施例之封裝基板（二）剖面示 意圖。 第4圖’係本發明一實施例之封裝基板（三）剖面示 意圖。 第5圖’係本發明一實施例之封裝基板（四）剖面示 意圖。 第6圖’係本發明一實施例之封裝基板（五）剖面示 意圖。 第7圖，係本發明一實施例之封裝基板（六）剖面示 意圖。 第8圖，係本發明一實施例之封裝基板（七）剖面示 意圖。 第9圖’係本發明一實施例之封裝基板（八）剖面示 意圖。 第1〇圖，係本發明一實施例之封裝基板（九）剖面 示意圖。 第1 1圖，係本發明一實施例之封裝基板（十）剖面 示意圖。· 17 ί珊娜 第1 2圖’係本發明一實施例之封裝基板（+ 一）剖 面示意圖。 第1 3圖’係本發明一實施例之封裝基板（十二）剖 面示意圖。 第1 4圖’係本發明一實施例之封裝基板（十三）剖 面示意圖。 第1 5圖’係本發明一實施例之封裝基板（十四）剖 面示意圖。 第1β圖’係本發明一實施例之封裝基板（十五）刳 面示意圖。 第17圖’係本發明一實施例之封裝基板（十六）剖 面示意圖。 第1 8圖’係本發明一實施例之封裝基板（十七）剖 面示意圖。 第1 9圖’係本發明一實施例之封裝基板（十八）剖 面示意圖。 第2 〇圖’係本發明一實施例之封裝基板（十九）剖 面示意圖。 第21圖’係習用有核層封裝基板之剖面示意圖。 ® h習用貫施線路增層（一）剖面示意圖。 第2 3圖’係習用實施線路增層（二）剖面示意圖。 第2 4圖 . ’係習用實施線路增層（三）剖面示意圖。 18 B80428 第2 5圖’係習用實施線路增層（四）剖面示意圖β 第2 6圖’係另一習用有核層封裝基板之剖面示意圖。 第2 7圖，係另一習用之第一線路增層結構剖面示意 圖。 第2 8圖，係另一習用之第二路增層結構剖面示意圖。 【主要元件符號說明】 (本發明部分） 步驟（Α)〜（Q) 11〜27 增層線路基板3 封裝基板5 銅核基板3 0 a 具置接晶墊之銅核基板30b 具電性接腳接墊之銅核基板3 0 c 第一、二阻層3 1、3 2 第一開口 3 3 第一凹槽3 4 置接晶墊3 5 第一介電層3 6 第一金屬層3 7 第三、四阻層38、39 1380428 第二開口 4 0 第二凹槽4 1 電性接腳接墊4 2 第一電性阻絕層4 3 第三開口 4 4 第五阻層4 5 第二金屬層4 6 第六、七阻層47、48 第四開口 4 9 第一線路層5 0 第一防焊層5 1 第五開口 5 2 第一、二阻障層53、54 (習用部分） 第一、二線路增層結構6 a、6 第一、二線路增層結構7 a、7 核心基板6 0 芯層6 0 1 線路層6 0 2 電鍍導通孔6 0 3 1380-428 第一介電層6 1 第一開口 6 2 該晶種層6 3 圖案化阻層6 4 第二開口 6 5 第一圖案化線路層6 6 導電盲孔6 7 第二介電層6 8 第二圖案化線路層6 9 核心基板7 0 樹脂塞孔7 Ο 1 電鍍通孔7 0 2 第一介電層7 1 第一圖案化線路層7 2 第二介電層7 3 第二圖案化線路層7 4

Claims (1)

  1. 十、申請專利範圍： 1 .一種高散熱性封裝基板之製作方法’係至少包含下 列步驟： (A) 提供一銅核基板； (B) 分別於該銅核基板之第一面上形成一第 一阻層，以及於該銅核基板之第二面上形成一完全 覆蓋狀之第二阻層’於其中，該第一阻層上並形成 複數個第一開口，並顯露其下該銅核基板之第一 面； (C) 移除該複數個第一開口下方之部分厚 鋼’並形成複數個第一凹槽於該銅核基板之第一面 上； (D) 移除該第一阻層及該第二阻層，並形成 具有複數個置晶接墊之鋼核基板； (E) 於該銅核基板之第一凹槽上形成一第/ 介電層及一第一金屬層’並顯露該銅核基板第一面 上用以定義置晶位置之複數個置晶接墊； (F )分別於a玄銅核基板之第一面上形成·一完 全覆蓋狀之第三阻層，以及於該銅核基板(之第二面 上形成一第四阻層’於其中，該第四阻層上係形成 有複數個第二開口，並顯露其下該銅核基板之第二 面； 22 (G) 於複數個第二開口表面形成複數個第二 凹槽，並顯露該複數個第二開口下方之第一介電 層； (H) 移除該第三阻層及該第四阻層，並形成 具複數個柱狀電性接腳接墊之銅核基板； (I )於複數個第二凹槽内形成一第一電性阻 絕層’並顯露球側複數個電性接腳接墊； (J) 於該第一金屬層與該第一介電層上形成 複數個第二開口’並顯露球側複數個電性接腳接 墊； (K) 於該銅核基板之第二面上形成一第五阻 層； (L) 於複數個第三開口中，、第一金屬層、第 一介電層及複數個置晶接墊上形成一第二金屬層； (M) 移除該第五阻層； (N )分別於該第二金屬層上形成一第六阻 層，以及於該銅核基板之第二面上形成一完全覆蓋 狀之第七阻層，於其中，該第六阻層上並形成複數 個第四開口，並顯露其下之第二金屬層； (〇）移除該第四開口下方之第二金屬層及第 •一金屬層； 23 5 ·=專法利r中第所述之高散熱性封裝基板 凹槽、該步騾⑹二騾（c)形成複數個第-rw 形成複數個第二凹槽、及步驟 除該第一、二金屬層之方法係可為蝕刻。 •tr作:t利範圍第1項所述之高散熱性繼板 可為剥離’該第—〜七阻層之移除方法係
    第1項所述之高散熱性封裝基板 ，該步驟（£)係以直接壓合該 一金屬層於其上，或係採取貼合 再形成該第一金屬層。
    6 7 · 依據申請專利範圍 之製作方法，其令 第一介電層及該第 該第一介電層後， 8 ·依射料鄉Ml項所狀高散触封裝基板 之製作方法’其中，該第一介電層及該第一電性阻 絕層係可為防谭綠漆、環氧樹脂絕緣膜（Aji_oto BuNd-up Film, ABF )、苯環丁烯 _(Benzocyc|0-buthene BCB)、雙馬來亞醯胺_ 三氮雜苯樹脂（8丨3巾3丨61巾丨(^丁「丨32丨门6,8丁）、環 氧樹脂板（FR4、FR5)、聚醯亞胺（Polyimide, PI)、 聚四氟乙烯（Poly(tetra-floroethylene), PTFE)或 ¥氧樹脂及玻璃纖維所組成之一者。 •依據申請專利範圍第2項所述之高散熱性封裝基板 之製作方法，其中，該第一電性阻絕層之形成方式 係可為直接壓合、印刷或喷塗。 25 1 0.依據申請專利範圍第1項所述之高散熱性封裝基 板：裝作方法’其中，複數個第三開口係可先做開 銅齒（Conforma丨Mask )後，再經由雷射鑽孔之 方式形成，亦或係以直接雷射鑽孔（LASER Direct) 之方式形成。 1 1 ·依據申請專利範圍第1項所述之高散熱性封裝基 板之製作方法，其中，該第二金屬層 可為無電電料⑽。 12:據制申請專利範圍第1項所述之高散熱性封裝基 ^作方法’其中’該第—料層係以印刷、旋 轉塗佈或喷塗所為之高感光性液態光阻。 13板依之據製ZVT/1項所述之高散熱性封裝基 鑛錄金'益電料‘金了一、二阻障層係可為電 …、電鍍鎳鈀金、電鍍銀或電鍍錫中擇其_。 26
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