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TW200921818A - Method of manufacturing multi-layer package substrate of non-nuclear layer - Google Patents

Method of manufacturing multi-layer package substrate of non-nuclear layer Download PDF

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Publication number
TW200921818A
TW200921818A TW097108810A TW97108810A TW200921818A TW 200921818 A TW200921818 A TW 200921818A TW 097108810 A TW097108810 A TW 097108810A TW 97108810 A TW97108810 A TW 97108810A TW 200921818 A TW200921818 A TW 200921818A
Authority
TW
Taiwan
Prior art keywords
layer
substrate
resist
circuit
copper core
Prior art date
Application number
TW097108810A
Other languages
English (en)
Other versions
TWI364805B (zh
Inventor
Weng-Chiang Ling
jia-zhong Wang
zhen-zhong Chen
Original Assignee
Bridge Semiconductor Corp
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Publication date
Application filed by Bridge Semiconductor Corp filed Critical Bridge Semiconductor Corp
Publication of TW200921818A publication Critical patent/TW200921818A/zh
Application granted granted Critical
Publication of TWI364805B publication Critical patent/TWI364805B/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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Description

200921818 九、發明說明： 【發明所屬之技術領域】 本發明係有關於—種無核層多層封裝基板之製作 方法，尤指一種以銅核基板為基礎，開始製作之 封裝基板之製作方法，於其中，該多層封裝基板之Γ士 構係包括具球側平面電性接腳接墊與至少—增層線 路。 【先前技術】 在-般多層封裝基板之製作上，其製作方式通常 係由一核心基板開始，經過鑽孔、電鑛金屬、塞孔及 雙面線路製作等方式，完成一雙面結構之内層核心 板，之後再經由一線路增層製程完成一多層封裝基 f 1第2 3圖所不’其係為—有核層封裝基板之剖 面不思圖。首先，準備一核心基 心基板7㈣由-具預定厚产之°玄核 子度之心層7 0 1及形成於 表面之線路層7〇2所構成，且該芯層 〇1中係形成有複數個電鍍導通孔7〇3，可藉以 連接ό玄忍層7 0 1表面之線路層7 〇 2。 ，著如第24圖〜第27圖所示，對該核心基板 70貫施線路增層製程。首先，係於該核心基板7〇 表面形成-第一介電層7丄，且該 面並形成有複數個第一開σ72 , 1表 η 9 . ^ 阏口 f J以路出該線路層7 ’之後’以無電電鍍與㈣等方式於 200921818 層71外露之表面形成一晶種層 ”上形成―圖案化阻層74，且】二，亥晶種層 中並有複數個第二開口 7 5，以案化阻層7 4 接著’利用電鍍之方式於該第 =7中形成一第一圖案化線路層7“複數個 守电訇孔，並使其第一圖案 過該複數個導電盲孔77與該核心基^ =以透 7 〇 2做電性導通，然；線路層 a m ^ _ π心1不夕除3亥圖案化阻層7 同樣地%U成後係形成―第~線路增層結構7a。 層表面再= 系可於該第一線路增層結構7a之最外 = :式形成一第二介電層78及-茶化線路層7 9之第二線路增層έ士盖 :增層方式形成一多層封裂基板。然而、: ; = 法有佈線密度低、層數多及流㈣雜等缺點。 卜亦有利用厚銅金屬板當核心材料之方， 可於經過I虫刻及塞孔塞太々 '’ 瘦由-線計^ 内層核心板後，再 8圖〜第30圖所示，盆…基板如 剖面示意圖。首先，準備==封裝基板之 -〇 n . ^ 有核^基板8 0，該核心基 80,由一具預定厚度之金屬層利用飯刻與 =〇1以及鑽孔與㈣通孔8()2^式形成 層鋼核心基板8Q;之後，湘上述線 於該核心基板80表面形成一第—介電層81及夂 圖案化線路層8 2，藉此構成一具第一線路增層結 200921818 構8a。該法亦與上述方法 :層方式於該第-線路增層結構8a之再 成一第二介電層㈠及外層表面形 此構成-具第-線路_ 圖案化線路層84，藉 成一多層封= _8b’以逐步增層方式形 、土板然而，此種製作方法不檑甘加 心基板製作不§，且 /、銅核 度低及流裎複雜等缺點。姓相R ’具有佈線密 使用者於實際使用時之所需。 <，、忒付口 【發明内容】 本毛明之主要目的係在於丄 :曾層線路封裝基板方法所製造之無核層;= 簡化傳統増層線路板製^=層基板板讀問題、及 礎，要目的係在於，從-銅核基板為基 ^ 之夕層封|基板。其結構係包括呈球側 層線路及置晶側與球側連接於其中’各增 盲、埋孔所導通。側連接之方式係以複數個電鑛 本發明之另-目的係在於’具有高密度增路 以提供電子元件相連時所f之繞線。a 基板上之目的’本發明係—種無核層多層封裝 :之衣作彳法，係先以光學微影及钱刻之方式於一 核基板之第一面上形成複數個第一凹槽，藉以突顯 200921818 複數接腳之一部分。並以此複數接腳之第一面作為與 增層線路之電性連接墊。之後於該複數接腳第一面上 形成複數個電鍍盲孔以連接至少一增層線路，並在增 層線路之置晶側形成電性接墊；而接腳側則利用該^ 核基板之第二面形成球側圖案阻層，並於之後移除該 銅核基板，再接著填入電性阻絕材料以形成一平面 性連接墊。 【實施方式】 清參閱『第1圖』所示，係為本發明之製作流程 示意圖。如圖所示：本發明係一種無核層多層封裝^ = 板之製作方法，其至少包括下列步驟： (Α)提供銅核基板丄1:提供一銅核基板； (B )形成第一、二阻層及複數個第一開口丄2 : 分別於該銅核基板之第一面上形成—第一阻層，以 於該銅核基板之第二面上形成一完全覆蓋狀之第二阻 層’於其中’並以曝光及顯影之方式在該第一阻層上 形成複數個第一開口 ’以顯露其下該銅核基板心— ττη
形成第一凹槽13 個第一開口下方形成複數個第 :以蝕刻之方式於複數 一凹槽； (D )移除第一 除該第一阻層及該第 、二阻層14:以剝離之方 —阻層’形成具有接腳第— 式移 面之 200921818 銅核基板； (E)形成第一雷 印刷之方式於€_^ F、·邑層15:以直接壓合或 層； 固第-凹槽内形成-第-電性阻絕 銅核基板第—介電層及第-金屬層1 6 :於該 第一介電層及該第一電性阻絕層上直接壓合一 -介電層‘，再形:：:金：係先採取貼合該第 方式於該i 2:::第二開口 1 7 :以雷射鑽孔之 二開口，並顯露其；一亥第一介電層上形成複數個第 個第-門伤Z、之鋼核基板第一面，其中，複數 乐—開口係可先做 再經由雷射鑽孔之方幵。::職1 Mask)後’ (LASFP η· 乂成，亦或係以直接雷射鑽孔 (laser Dlreet)之方式形成； ^ —金屬層1 8 ··以無電電鑛與電鍍 數個第二開口中及該第一金屬層上形成一 说诗 '、 °亥第二金屬層係作為與該銅核基 板弟一面之電性連接用； (I )形成第三、四阻層及複數個第三開口 i 9 : 分別於該第二金屬層上形成一第三阻層，以及於該銅 亥基板之第二面上形成—完全覆蓋狀之第四阻層，於 其中’並以曝光及顯影之方式在該第三阻層上形成複 200921818 數個第三開口，以顯露其下之第二金屬層； (J )升> 成第一線路層2 0 :以鍅刻之方式移除 該第三開口下方之第二金屬層及第一金屬層，並形成 一第一線路層； (K)元成具有銅核基板支撐並具電性連接之單 層增層線路基板21:以剝離之方式移除該第三阻層 及該第四阻層。至此，完成一具有銅核基板支撐並具 電性連接之單層增層、㈣基板，並可騎直接進行^ 驟（L)或步驟（M); · 曰曰惻綠路層與球側平面電性接腳接 墊之製作2 2 :於該單層增層線路基板上進行一置晶 側線路層與球側平面電性接腳接塾之製作，於其中曰 ;:第一祕層表面形成-第-防焊層，並以曝光及 顯衫之方式在該第一防輝層上形成複數個第四開口， 以顯露線路增層結構料電性連㈣之部分，接著冉 分別於該銅核基板之第- 在該第五阻層上以上:形;：第五阻層，並且 及颂衫之方式形成複數個第五 …以及於該第-防焊層上形成-完全覆蓋狀之第 六阻層。之後移除複數個第五開口下方弟 以形成複數個第二凹样，* * 钔衫基板， 五阻層與該第六阻層：接！再以f離之方式移除該第 —第-電性版㈣ 接者於複數個第二凹槽中形成 第-電H阻絕層’並顯 係分別於複數個第四開十墊。取後， 上形成一第一阻障層，以及 10 200921818 於該平面電性連接塾上形成一第二阻障層。至此，完 Ϊ接：有：Ϊ圖案化之置晶側線路層與球側平面電性 墊’，、中’該第一、二阻障層係可為電鍍鎳金、 無電鍍鎳金'電鍍銀或電鍍錫中擇其―；以及 (Μ)進行線路增層結構製作2 3 :於該單層辦 層線路基板上進行一線路增層結構之製作，於並^，曰 在該第-線路層與該第一介電層表面形成一第二 =並以雷射鑽孔之方式在該第二介電層上形成複數 =第六開口 ’以顯露其下之第一線路層，接著以益電 ^鑛與電鑛之方式於該第二介電層與複數個第六開口 面形成-第-晶種層，再分別於該第—晶種層上形 ^一第七阻層，以及於該銅核基板之第二面上形成一 =覆蓋狀之第讀層，並湘曝歧顯影之方式於 ㈣七阻層上形成複數個第七開口，以顯露其下之第 :晶種層，之後再以電鑛之方式於該第七開口中 路之第-晶種層上形成一第三金屬層，最後以剝離之 方式移除該第七阻層與該第人阻層，並㈣刻之 移除該第-晶種層，以在該第二介電層上形成—第L 線路層。至此’又再增加_層之線路增層結構，完 -具有銅核基板支撐並具電性連接之雙層增層線路基 並可繼續本步驟（Μ)增加線路增層結構，形二 具更多層之封裝基板’亦或直接至該步驟（l )進行 置晶側線路層與球側單面電性接腳接墊之製作，其 200921818 中’複數個第六開口係可先做開銅窗後，再經由雷射 鑽孔之方式形成，亦或係以直接雷射鑽孔之方式形成。 於其中，上述該第一〜八阻層係以貼合、印刷或 旋轉塗佈所為之乾膜或溼膜之高感光性光阻；該第 一、二電性阻絕層及該第一、二介電層係可為防焊綠 漆、環氧樹脂絕緣膜（Ajinomoto Build-up Film, ABF)、苯環丁烯（Benzocyclo-buthene, BCB)、雙馬 來亞醯胺-三氮雜苯樹脂（Bismaleimide Triazine， BT)、環氧樹脂板（FR4、FR5)、聚醯亞胺（P〇lyim丨de， PI)、聚四氟乙稀（P〇ly(tetra-floroethylene)，PTFE )或 環氧樹脂及玻璃纖維所組成之一者。 請參閱『第2圖〜第1 2圖』所示，係分別為本 發明一實施例之多層封裝基板（一）剖面剖面示意圖、 本發明一實施例之多層封裝基板（二）剖面示意圖、 本發明一實施例之多層封裝基板（三）剖面示意圖、 本發明一實施例之多層封裝基板（四）剖面示意圖、 本發明一實施例之多層封裝基板（五）剖面示意圖、 本發明一實施例之多層封裝基板（六）剖面示意圖、 本發明一實施例之多層封裝基板（七）剖面示意圖、 本發明一實施例之多層封裝基板（八）剖面示意圖、 本發明一實施例之多層封裝基板（九）剖面示意圖、 本發明一實施例之多層封裝基板（十）剖面示意圖、 及本發明一實施例之多層封裝基板（十一）剖面示意 12 200921818 圖。如圖所示：本發明於—較佳實施例中，係先提供 -銅核基板3 0，並分別於該銅核基板3 ◦之第—面 上貼合一高感光性高分子材料之第一阻層3丄，以 於該銅核基板3Qn上貼合—“光性高分子 材料之第二阻層3 2，並以曝光及顯影之方式在 -阻層3 1上形成複數個第一開口 3 3，以顯露‘ 該銅核基板3 0之第-面，而其第二面上之第二^ 3 2則為完全覆蓋狀。接著㈣刻之方式製作一姓^ 凹槽3 4 ’其中’該銅核基板3 ◦係為一不含介電斧 材料之銅板；該第一、二阻層3丄' 3 2係為乾膜‘ 阻層。 、 接著’移除該第-、二阻層，以形成具有接腳第 -面之銅核基板3 〇。之後係印刷一第一電性阻絕層 3 5於該蝕刻凹槽中，並在該銅核基板3 〇之第一面 上壓合一第一介電層36及一第一金屬層37，再以 雷射鑽孔之方式於該第一金屬層3 7與該第一介電層 3 6上形成複數個第二開口 3 8，之後係以無電電鍍 與電鍍之方式於複數個第二開口 3 8及該第」金屬層X 37表面形成一第二金屬層39，其中，該第一、二 金屬層3 7 3 9皆為銅’且該第二金屬層3 9係作 為與該銅核基板3 0第一面之電性連接用。 接著，分別於該第二金屬層3 9上貼合一高感光 性高分子材料之第三阻層4 〇，以及於該銅核基板3 13 200921818 =第二面上貼合-高感光性高分子材料之第四阻層 41 ’並㈣光及顯影之方式於該第 成複數個第三開口 4 2 , 4乙以顯路其下之第二金屬層3 I。之後係以姓刻之方式移除該第三開口 4 2下之第 、一金屬層，以形成一第一綠玫jgj 0 „ 弟線路層43,最後並移 :第三、四阻層。至此，完成-具有圖案化線路並 二亥銅核基板3 0之接腳第—面連接之單層增層線路 暴板3。 請參閱『第13圖〜第17圖』所示，係分別為 本發明-實施例之多層封裝基板（十二）剖面示意圖、 本發明-實施例之多層封裝基板（十三）剖面示意圖、 本發明-實施狀多層封裝基板（切）剖面示意圖、 本發明-實關之多層封裝基板（十五）剖面示意圖、 及本發明—實施例之多層封裝基板（十六）剖面示意 圖。如圖所示：在本發明較佳實施例中，係先行進行 線路增層結構之製作。首先於該第-輯層4 3與該 $ "電層3 6上貼>1合-為環氧樹脂絕緣膜材料之 第二介電層4 4，之後並以雷射鑽孔之方式於該第二 介電層4 4上形成複數個第四開口 4 5，以顯露其下 之第一線路層4 3 ’並在該第二介電層4 4與該第四 間口 4 5表面以無電電鍍與電鍍方式形成一第一晶種 層4 6。之後分別於該第一晶種層4 6上貼合一高感 光性高分子材料之第五阻層4 7，以及於該銅核基板 14 200921818 =Ϊ第二面上貼合—南感光性高分子材料之第六阻 接者利用曝光及顯影之方式於該第五阻層4 2 =複數個第五開口49 1後再於複數第五開 =中電鍍一第三金屬層5〇，最後移除該第五' 層，並再讀刻之方式移除顯露之第-日日日種層， 以形成-第二線路層51。至此，又再增加一層之線 路增層結構，完成一具有銅核其 之雙層增層線路基板4 具電性連接 %再中，該第一晶種層4 6 與該第三金屬層5 0皆為金屬銅。 請參閱『第18圖〜第”圖』所示，係分別為 本發明-實施例之多層封襄基板（十七）剖面示意圖'、，、 本發明一實施例之多層封裝 — 板（十八）剖面示意圖、 本發明-貫施例之多層封裝基板（十九）剖面示意圖、 本發明-實施例之多層封裝基板（二十）剖面示意圖、 及本發明-實施例之多層封裝基板（二十一）剖面示 意圖。如圖所示：之後，力士旅 “、_ 俊在本發明較佳實施例中係接 者進行置晶側線路層與球側平面電性接腳接塾之势 :。：先於該第二線路層51表面塗覆一層絕緣保護 之弟-防焊層5 2 ’並以曝光及㈣之方式於該第 -防焊層5 2上形成複數個第六開π53，以顯露線 路增層結構作為電性連接墊。接著分敎該銅核基板 3 0之第二面上貼合-高感光性高分子材料之第七阻 層54,以及於該第—防焊層52上貼合一高感光高 15 200921818 分子材料之第八阻層5 5，且該第七阻層5 4上並形 成有複數個第七開口 5 6。之後係移除複數個第七開 口 5 6下方之銅核基板3 〇，以形成複數個第二凹槽 5 7 並再移除該第七、八阻層。接著於複數個第二 凹槽5 7中形成一第二電性阻絕層5 8，以顯露出平 面電性連接墊5 9。最後，係分別於複數個第六開口 5 3上形成—第一阻障層6 〇，以及於平面電性連接 墊5 9上形成一第二阻障層6丄。至此，完成一無核 層多層封裝基板5，其中，該第一、二阻障層6 〇 ^ 6 1皆為鎳金層。 (由上述可知，本發明係從銅核基板為基礎，開始 製作之多層封裝基板，其結構係包括具球側平面電‘ =㈣與至少—增層線路。於其中，各增層線路及 曾日日則與球側連接之方式係以複數個電鍍盲、埋孔 導通。因A，本發明封裝基板之特色係在於呈有 f增層線路以提供電子元件相連時所需之繞二 使用本發明具咼揞度之增層線路 製造之盔核層多声封梦其缸^ 了我I板方法所 ‘，.、㈣夕層封4基板，係可有效達到改 核層基板板彎翹問題、及簡化傳 口超'寻 裎。 a間化傳統增層線路板製作流 标上所述 今、污乂 Ί尔 製作方法，可有效改善習用之種=Μ封裝基板之 ^ σ &用夂種種缺點，苴站描4 θ 有球側平面電性接腳接墊與至少―增層線路了可利用 16 200921818 具有高密度增層線路提供電子元件相連時所需之繞 線。藉此，使用本發明具高密度之增層線路封裝基板 方法所製造之無核層多層封裝基板，係可有效達到改 ^超薄核層基板板彎翹問題、及簡化傳統增層線路板 製=流程，進而使本發明之産生能更進步、更實用、 种令Γ使用者之所須’確已符合發明專利申請之要 ’羑依法提出專利申請。 处以上所述者，僅為本發明之較佳實施例而已， 定本發明實施之範圍；&，凡依本發明 T明專利範圍及發明說明查 化與修飾，輯作之簡單的等效變 心明專利涵蓋之範圍内。 200921818 【圖式簡單說明】 第1圖，係本發明之製作流程示意圖。 第2圖，係本發明一實施例之多層封裝基板（一）剖 面示意圖 第3圖’係本發明一實施例之多層封裝基板（二）剖 面示意圖。 第4圖，係本發明一實施例之多層封裝基板（三）剖 面示意圖。 第5圖，係本發明一實施例之多層封裝基板（四）剖 面示意圖。 第6圖，係本發明一實施例之多層封裝基板（五）剖 面示意圖。 第7圖，係本發明一實施例之多層封裝基板（六）剖 面示意圖。 第8圖，係本發明一實施例之多層封裝基板（七）剖 面示意圖。 第9圖’係本發明一實施例之多層封裝基板（八）剖 面示意圖。 弟1 0圖’係本發明一實施例之夕層封裝基板（九） 剖面示意圖。 第1 1圖，係本發明一實施例之夕層封裝基板（十） 剖面示意圖。 18 200921818 第1 2圖，係本發明一實施例之多層封裝基板（十一 剖面示意圖。 第1 3圖，係本發明一實施例之多層封裴基板（十一 剖面示意圖。 第1 4圖，係本發明一實施例之多層封裝基板（十二 剖面示意圖。 第1 5圖，係本發明一實施例之多層封裝基板（十四' 剖面示意圖。 第1 6圖，係本發明一實施例之多層封裝基板（十五、 剖面示意圖。 第1 7圖，係本發明一實施例之多層封裝基板（十六： 剖面示意圖。 第1 8圖，係本發明一實施例之多層封裝基板（十七） 剖面示意圖。 第1 9圖，係本發明一實施例之多層封裝基板（十八） 剖面示意圖。 第2 0圖’係本發明一實施例之多層封裝基板（十九） 剖面示意圖。 第2 1圖，係本發明一實施例之多層封裝基板（二十） 剖面示意圖。 — 第2 2圖’係本發明一實施例之多層封裝基板（二十 )剖面示意圖。 19 200921818 第2 3圖 係習用有核層 第2 4圖，係習用實施線路增層 第2 5圖，係習用實施線路增層 第2 6圖，係習用實施線路增層 第2 7圖，係習用實施線路增層 封裝基板之剖面示意圖 (一） 剖面示意圖。 (二） 剖面示意圖。 (三） 剖面示意圖。 (四） 剖面示意圖。 第2 8圖，係另一 習用有核層封裝基板之剖面示意圖。 第2 9圖 ，係另一習用之第一線路增層結構剖面示意 圖。 第3 0圖，係另-習用之第二路增層結構剖面示意圖。 【主要元件符號說明】 (本發明部分） 步驟（A)〜（M) 11〜23 銅核基板3 〇 第一、二阻層3 1、3 2 第一開口 3 3 蝕刻凹槽3 4 第一電性阻絕層3 5 第一介電層3 6 第一金屬層3 7 第二開口 3 8 20 200921818 第二金屬層3 9 第三、四阻層40、41 第三開口 4 2 第一線路層4 3 第二介電層4 4 第四開口 4 5 第一晶種層4 6 第五、六阻層47、48 第五開口 4 9 第三金屬層5 0 第二線路層5 1 第一防焊層5 2 第六開口 5 3 第七、八阻層54、55 第七開口 5 6 第二凹槽5 7 第二電性阻絕層5 8 平面電性連接墊5 9 第一、二阻障層60、6 200921818 (習用部分） 第一、二線路增層結構7 a、7 b 第一、二線路增層結構8 a、8 b 核心基板7 0 芯層7 0 1 線路層7 0 2 電鍍導通孔7 0 3 第一介電層7 1 第一開口 7 2 該晶種層7 3 圖案化阻層7 4 第二開口 7 5 第一圖案化線路層7 6 導電盲孔6 7 第二介電層6 8 第二圖案化線路層6 9 核心基板8 0 樹脂塞孔8 0 1 電鍍通孔8 0 2 第一介電層8 1 22 200921818 第一圖案化線路層8 2 第二介電層8 3 第二圖案化線路層8 4

Claims (1)

  1. 200921818 十、申請專利範圍： 1 . 一種無核層多層封裝基板之製作方法，係至少包含 下列步驟： (A)提供一銅核基板； (B )分別於該銅核基板之第一面上形成一第 一阻層，以及於該銅核基板之第二面上形成一完全 覆蓋狀之第二阻層，於其中，該第一阻層上並形成 複數個第一開口，並顯露其下該銅核基板之第一 C )於複數個第一開口下方形成複數個第一 (D )移除該第— (E )於複數個第. 阻層及該第二阻層； 凹槽内形成一第一電性阻 絕層；
    24 200921818 (i )分別於該第二金屬層上形成一第三阻 層’以及於該銅核基板之第二面上形成一完全覆蓋 狀之第四阻層，於其中，該第三阻層上並形成複數 個第三開口； (J) 移除該第三開口下方之第二金屬層及第 一金屬層，並形成一第一線路層； (K) 移除該第三阻層及該第四阻層。至此， 凡成一具有銅核基板支撐並具電性連接之單層增 層線路基板’並可選擇直接進行步驟（L)或步驟 (M); (L )於該單層增層線路基板上進行一置晶側 線路層與球側平面電性接腳接墊之製作，於其中， ，二第二線路層表面形成一第一防焊層，並且、在該 第防力干層上係形成複數個第四開口，以顯露線路 增層結構作為f性連㈣之部分，接著再分別於該 銅核基板之第二面上形成一第五阻層，並且在該第 '^阻層上係形成複數個第五開口，以及於該第一防 太干層j形成一完全覆蓋狀之第六阻層。之後移除複 ^ 開口下方之銅核基板，以形成複數個第二 凹槽，亚再移除該第五阻層與該第六阻層， 複數個第二凹梓中报ώ者方； 凹导曰中形成一弟二電性阻絕層，並顯露 出十面電性連接墊。最後，係分別於複數 口上形成—结 Λ q间 弟一阻卩导層，以及於該平面電性連接墊 25 200921818 上形成一第二阻障層。至此， 化之置晶制结枚M t 成具有元整圖案 側線路層與球側平面電性連接墊；以及 二於該單層增層線路基板上進行-線路增 = 其中’在該第一線路層與該第-介 電曰表面形成一第二介電層，並且 :形接成有複數個第六開口，以顯露其下 二二：於該第二介電層與複數個第六開口表面形 ^弟—晶種層，再分別於該第—晶種層上形成— 第七阻層，以及於該銅核基板之第二面上形成一* :覆蓋狀之第八阻層，其中，該第七阻層上係形： 有複數個第七開口 ’以顯露其下之第一晶種層。之 後於該第七開口中已顯露之第—晶種層上形曰成一 第三金屬層，最後再移除該第七阻層、該第八阻層 及該第一晶種層，以在該第二介電層上形成一第二 線路層。至此，完成一具有銅核基板支撐並具電^ 連接之雙層增層線路基板。並可繼續本步驟（M) 增加線路增層結構，形成具更多層之封裝基板，亦 或直接至該步驟（L)進行置晶側線路層與球側平 面電性接腳接墊之製作。 2 .依據申請專利範圍第丄項所述之無核層多層封裝基 板之製作方法，其中’該銅核基板係為一不含介電 層材料之銅板。 26 200921818 3 ·依據申請專利範圍笛@ 板之心t 娃層乡層封裝基 其中’該第一〜八阻層係以貼合、 阻。5方疋轉塗佈所為之乾膜或漫膜之高感光性光 4 範圍/广^ 氟作方法’其中，複數個第_、三、四 七開口係以曝光及顯影之方式形成。 圍第1項所述之無核層多層封裝基 一凹中，該步驟（c)形成複數個第 凹槽、该步驟（J)移除該第_、二金屬 =L)曰形成複數個第二凹槽及該步雜 除该第-曰曰種層之方法係可為蝕刻。 6 範圍第1項所述之無核層多層封裝基 係可為剝離。 亥弟一〜八阻層之移除方法 7 8 •依據申請專利節图笛 板之_柞古i圍第述之無核層多層封裝基 扳之製作方法，其中， t,, ^,, e亥第一、二電性阻絕層係以 直接壓合或印刷之方式形成。 .依據申請專利範圍笛 板之製作方法，：弟1項所述之無核層多層封裝基 第一、二八了中，该第一、二電性阻絕層及該 1、層係可為防焊綠漆、環氧 (Ajinomot() B 手u『細、·巴、.象朕 】】d-uP Fi]m, ABF )、苯環丁烯 27 200921818 (Benzocyclo-buthene，BCB )、雙馬來亞醯胺 _三氮 雜苯樹脂（Bismaleimide Triazine, BT )、環氧樹脂 板（FR4、FR5)、聚醯亞胺（Polyimide，？！）、聚 四氟乙烯（Poly(tetra-floroethylene), PTFE )或環氧 樹脂及玻璃纖維所組成之一者。 9 .依據申請專利範圍第i項所述之無核層多層封裝基 板，製作方法，其中，該步驟（F )係以直接壓合 忒第一介電層及該第一金屬層於其上，或係採取貼 合該第一介電層後’再形成該第一金屬層。 10芙專利㈣第1項所述之無核層多層封裝 2 ;作方法，其中，複數個第二、六開口係可 形1或係以直接雷射鑽孔（Μι 依據申請專利範 基板之製作方味第1項所述之無核層多層封褒 —晶種層之炉成二中，该第二、三金屬層及該第 2 _ 4方式係可為無電電鍍與電鑛。 2.依據申請專利範圍第〕s 基板之製作方 '所述之無核層多層封裝 電鍍錄金、無電鍍錦金、‘:二二阻障層係可為 罨鍍銀或電鍍錫中擇其 —0
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