TW334631B - Semiconductor IC apparatus - Google Patents

Semiconductor IC apparatus

Info

Publication number: TW334631B
Authority: TW; Taiwan
Prior art keywords: semiconductor; circulation; vss; vnbh; vnbl
Prior art date: 1997-04-01

Application number

TW086110643A

Other languages

English (en)

Inventor

Youichi Tobida

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-04-01

Filing date

1997-07-23

Publication date

1998-06-21

1997-07-23 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1998-06-21 Application granted granted Critical

1998-06-21 Publication of TW334631B publication Critical patent/TW334631B/zh

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Dram (AREA)
Logic Circuits (AREA)
Semiconductor Integrated Circuits (AREA)
Static Random-Access Memory (AREA)
Semiconductor Memories (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Non-Volatile Memory (AREA)

TW086110643A 1997-04-01 1997-07-23 Semiconductor IC apparatus TW334631B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP08271097A JP4046383B2 (ja)	1997-04-01	1997-04-01	半導体集積回路装置

Publications (1)

Publication Number	Publication Date
TW334631B true TW334631B (en)	1998-06-21

Family

ID=13781971

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW086110643A TW334631B (en)	1997-04-01	1997-07-23	Semiconductor IC apparatus

Country Status (5)

Country	Link
US (1)	US5900665A (zh)
JP (1)	JP4046383B2 (zh)
KR (1)	KR100261013B1 (zh)
CN (1)	CN1113414C (zh)
TW (1)	TW334631B (zh)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6750527B1 (en) *	1996-05-30	2004-06-15	Kabushiki Kaisha Toshiba	Semiconductor integrated circuit device having a plurality of wells, test method of testing the semiconductor integrated circuit device, and test device which executes the test method
US6593799B2 (en)	1997-06-20	2003-07-15	Intel Corporation	Circuit including forward body bias from supply voltage and ground nodes
US6232827B1 (en)	1997-06-20	2001-05-15	Intel Corporation	Transistors providing desired threshold voltage and reduced short channel effects with forward body bias
US6218895B1 (en) *	1997-06-20	2001-04-17	Intel Corporation	Multiple well transistor circuits having forward body bias
US6100751A (en) *	1997-06-20	2000-08-08	Intel Corporation	Forward body biased field effect transistor providing decoupling capacitance
US6300819B1 (en)	1997-06-20	2001-10-09	Intel Corporation	Circuit including forward body bias from supply voltage and ground nodes
JP3185730B2 (ja) *	1997-11-14	2001-07-11	日本電気株式会社	相補型ｍｏｓ半導体装置
US6307233B1 (en) *	1998-07-31	2001-10-23	Texas Instruments Incorporated	Electrically isolated double gated transistor
FR2783941B1 (fr) *	1998-09-30	2004-03-12	St Microelectronics Sa	Circuit de regulation d'une tension de sortie d'un dispositif a pompe de charges positives
JP2000243085A (ja)	1999-02-22	2000-09-08	Hitachi Ltd	半導体装置
US6535415B2 (en) *	1999-02-22	2003-03-18	Hitachi, Ltd.	Semiconductor device
DE19911463C1 (de) *	1999-03-15	2001-02-08	Siemens Ag	Leseverstärkeranordnung mit Feldeffekttransistor mit kurzer Kanallänge und einstellbarer Einsatzspannung
US6301146B1 (en) *	1999-12-23	2001-10-09	Michael Anthony Ang	Static random access memory (RAM) systems and storage cell for same
TW501278B (en) *	2000-06-12	2002-09-01	Intel Corp	Apparatus and circuit having reduced leakage current and method therefor
JP2002015565A (ja) *	2000-06-29	2002-01-18	Mitsubishi Electric Corp	半導体記憶装置
US6507523B2 (en)	2000-12-20	2003-01-14	Micron Technology, Inc.	Non-volatile memory with power standby
US6510088B2 (en) *	2001-03-22	2003-01-21	Winbond Electronics Corporation	Semiconductor device having reduced leakage and method of operating the same
US6751152B2 (en) *	2001-10-31	2004-06-15	International Business Machines Corporation	Method and configuration to allow a lower wordline boosted voltage operation while increasing a sensing signal with access transistor threshold voltage
JP3520283B2 (ja) *	2002-04-16	2004-04-19	沖電気工業株式会社	半導体記憶装置
JP4290457B2 (ja) *	2003-03-31	2009-07-08	株式会社ルネサステクノロジ	半導体記憶装置
US7248988B2 (en) *	2004-03-01	2007-07-24	Transmeta Corporation	System and method for reducing temperature variation during burn in
DE102004037087A1 (de) *	2004-07-30	2006-03-23	Advanced Micro Devices, Inc., Sunnyvale	Selbstvorspannende Transistorstruktur und SRAM-Zellen mit weniger als sechs Transistoren
US7285827B1 (en) *	2005-08-02	2007-10-23	Spansion Llc	Back-to-back NPN/PNP protection diodes
US20080135827A1 (en) *	2006-09-25	2008-06-12	Stmicroelectronics Crolles 2 Sas	MIM transistor
DE102008007029B4 (de) *	2008-01-31	2014-07-03	Globalfoundries Dresden Module One Limited Liability Company & Co. Kg	Betrieb einer elektronischen Schaltung mit körpergesteuertem Doppelkanaltransistor und SRAM-Zelle mit körpergesteuertem Doppelkanaltransistor
JP2009259972A (ja) *	2008-04-15	2009-11-05	Panasonic Corp	半導体装置、及び該半導体装置を用いたエネルギー伝達装置
US8194370B2 (en) *	2008-11-25	2012-06-05	Nuvoton Technology Corporation	Electrostatic discharge protection circuit and device
US9489989B2 (en)	2010-06-22	2016-11-08	Taiwan Semiconductor Manufacturing Company, Ltd.	Voltage regulators, memory circuits, and operating methods thereof
US9024317B2 (en)	2010-12-24	2015-05-05	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
CN102323529B (zh) *	2011-08-08	2016-04-20	上海华虹宏力半导体制造有限公司	Mos晶体管的寄生双极型晶体管的特性表征方法
US8705282B2 (en) *	2011-11-01	2014-04-22	Silicon Storage Technology, Inc.	Mixed voltage non-volatile memory integrated circuit with power saving
JP6610223B2 (ja) *	2015-12-04	2019-11-27	凸版印刷株式会社	半導体集積回路
FR3068187B1 (fr) *	2017-06-23	2019-08-09	Stmicroelectronics Sa	Circuit a pompe de charges negative
KR20230140036A (ko) *	2022-03-29	2023-10-06	삼성전자주식회사	바디 바이어스 전압 생성기 및 이를 포함하는 반도체 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0621443A (ja) *	1992-04-17	1994-01-28	Nec Corp	半導体集積回路
US5461338A (en) *	1992-04-17	1995-10-24	Nec Corporation	Semiconductor integrated circuit incorporated with substrate bias control circuit
JP4067582B2 (ja) *	1993-11-29	2008-03-26	株式会社ルネサステクノロジ	半導体回路
JPH08186180A (ja) *	1994-12-28	1996-07-16	Oki Electric Ind Co Ltd	Ｃｍｉｓ型集積回路装置及びその製造方法

1997
- 1997-04-01 JP JP08271097A patent/JP4046383B2/ja not_active Expired - Fee Related
- 1997-07-23 TW TW086110643A patent/TW334631B/zh not_active IP Right Cessation
- 1997-09-25 KR KR1019970048700A patent/KR100261013B1/ko not_active IP Right Cessation
- 1997-09-26 US US08/938,605 patent/US5900665A/en not_active Expired - Lifetime
- 1997-11-26 CN CN97122652A patent/CN1113414C/zh not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH10275466A (ja)	1998-10-13
JP4046383B2 (ja)	2008-02-13
US5900665A (en)	1999-05-04
KR100261013B1 (ko)	2000-07-01
KR19980079381A (ko)	1998-11-25
CN1113414C (zh)	2003-07-02
CN1195196A (zh)	1998-10-07

Publication	Publication Date	Title
TW334631B (en)	1998-06-21	Semiconductor IC apparatus
DE68921020D1 (de)	1995-03-23	Integrierte MOS-Schaltung zum Steuern von lichtermittierenden Dioden.
EP0654820A3 (de)	1995-10-11	Halbleiter-Modul.
DE68918775D1 (de)	1994-11-17	Chip-auf-Chip-Verbindungsschema für integrierte Halbleiterschaltungen.
TR970073A2 (tr)	1997-02-21	Alfa adrenerjik resentör antagonistleri olarak pirimidindion pirimidintrion,triazindion, tetrahidrokinazolindion türevleri.
DE69013267D1 (de)	1994-11-17	Integrierte Halbleiterschaltungsanordnung.
EP0588300A3 (en)	1994-10-12	Semiconductor transistor.
DE3784130D1 (de)	1993-03-25	Kuehlung von objekten, zum beispiel halbleiteranordnungen.
EP0622894A3 (en)	1995-11-08	Semiconductor power amplifier integrated circuit.
EP0657942A3 (en)	1995-09-13	Lateral bipolar transistor.
NL1010321A1 (nl)	1999-04-21	Wafeldrager.
NL194417B (nl)	2001-11-01	Ge´ntegreerde halfgeleiderschakeling.
MXPA03011306A (es)	2004-03-19	Metodos para la preparacion y uso de 1a,24 (s) - hidroxivitamina d2.
DE69001548D1 (de)	1993-06-09	Lichtemittierende halbleitervorrichtung.
DE69011038D1 (de)	1994-09-01	Integrierte Halbleiterschaltung.
DE69202216D1 (de)	1995-06-01	IC-Träger oder IC-Fassung.
FR2701803B1 (fr)	1995-04-21	Semoir perfectionné.
IT1293777B1 (it)	1999-03-10	Processo per la preparazione di tetraazamacrocicli
TW359019B (en)	1999-05-21	Semiconductor device
EP0623955A3 (en)	1995-04-26	Semiconductor chip module.
HK1019118A1 (en)	2000-01-21	Semiconductor device.
ATE277924T1 (de)	2004-10-15	Aryl-8-azabicyclo(3.2.1)octanes für die behandlung von depression
DE69106238D1 (de)	1995-02-09	Stromversorgungsschaltungen.
TR199701482T1 (xx)	1998-03-21	Osteoporozu �nlemek i�in alendronat kullan�lmas�.
EP0673072A3 (en)	1995-11-08	Bipolar semiconductor devices.

Legal Events

Date	Code	Title	Description
2011-03-21	MM4A	Annulment or lapse of patent due to non-payment of fees