TW281767B - - Google Patents

Info

Publication number: TW281767B
Authority: TW; Taiwan

Application number

TW085101331A

Original Assignee

Toshiba Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-01-17

Filing date

1996-02-02

Publication date

1996-07-21

1996-02-02 Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd

1996-07-21 Application granted granted Critical

1996-07-21 Publication of TW281767B publication Critical patent/TW281767B/zh

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Dram (AREA)
Semiconductor Memories (AREA)
Static Random-Access Memory (AREA)

TW085101331A 1995-01-17 1996-02-02 TW281767B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP7004551A JPH08195083A (ja)	1995-01-17	1995-01-17	半導体記憶装置

Publications (1)

Publication Number	Publication Date
TW281767B true TW281767B (zh)	1996-07-21

Family

ID=11587192

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW085101331A TW281767B (zh)	1995-01-17	1996-02-02

Country Status (5)

Country	Link
US (1)	US5699289A (zh)
JP (1)	JPH08195083A (zh)
KR (1)	KR100196017B1 (zh)
CN (1)	CN1084516C (zh)
TW (1)	TW281767B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3361018B2 (ja) *	1996-11-11	2003-01-07	株式会社東芝	半導体記憶装置
KR100258345B1 (ko) *	1996-11-28	2000-06-01	윤종용	파워라인의 배치구조를 개선한 반도체 메모리 장치
US5844836A (en) *	1997-03-24	1998-12-01	Advanced Micro Devices, Inc.	Memory cell having increased capacitance via a local interconnect to gate capacitor and a method for making such a cell
US6130470A (en) *	1997-03-24	2000-10-10	Advanced Micro Devices, Inc.	Static random access memory cell having buried sidewall capacitors between storage nodes
JP4056107B2 (ja) *	1997-06-20	2008-03-05	エルピーダメモリ株式会社	半導体集積回路
CA2217359C (en) *	1997-09-30	2005-04-12	Mosaid Technologies Incorporated	Method for multilevel dram sensing
JP4017248B2 (ja) *	1998-04-10	2007-12-05	株式会社日立製作所	半導体装置
JPH11306763A (ja) *	1998-04-23	1999-11-05	Nec Corp	半導体記憶装置
DE19907155A1 (de) *	1999-02-19	2000-08-31	Siemens Ag	Integrierte Halbleiterspeicheranordnung mit Selbstpufferung von Versorgungsspannungen
JP2001067868A (ja)	1999-08-31	2001-03-16	Mitsubishi Electric Corp	半導体記憶装置
KR100351054B1 (ko) *	2000-06-13	2002-09-05	삼성전자 주식회사	승압 전압 레벨 안정화 회로를 구비한 반도체 메모리장치
US6339541B1 (en) *	2000-06-16	2002-01-15	United Memories, Inc.	Architecture for high speed memory circuit having a relatively large number of internal data lines
JP4195821B2 (ja) *	2003-02-26	2008-12-17	富士通マイクロエレクトロニクス株式会社	半導体集積回路の設計方法
JP2006100436A (ja) *	2004-09-28	2006-04-13	Toshiba Corp	半導体装置
JP4787592B2 (ja) *	2005-10-14	2011-10-05	パナソニック株式会社	システムｌｓｉ
KR100727411B1 (ko) *	2005-12-29	2007-06-13	삼성전자주식회사	오픈 비트라인 구조의 메모리 셀 어레이를 가지는 반도체메모리 장치의 승압전압 발생회로 및 승압전압 발생방법
KR100776738B1 (ko) *	2006-04-06	2007-11-19	주식회사 하이닉스반도체	반도체 메모리 장치
KR100743659B1 (ko) *	2006-06-30	2007-07-30	주식회사 하이닉스반도체	센스 앰프의 센싱 타이밍 제어 회로
US9196375B2 (en) *	2013-07-05	2015-11-24	Kabushiki Kaisha Toshiba	Semiconductor storage device
CN115424654B (zh) *	2021-06-01	2024-07-05	长鑫存储技术有限公司	存储器
US12094518B2 (en)	2022-11-17	2024-09-17	Macronix International Co., Ltd.	Memory device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5208782A (en) *	1989-02-09	1993-05-04	Hitachi, Ltd.	Semiconductor integrated circuit device having a plurality of memory blocks and a lead on chip (LOC) arrangement
JPH07114259B2 (ja) *	1989-10-19	1995-12-06	株式会社東芝	半導体記憶装置
US5040144A (en) *	1989-11-28	1991-08-13	Motorola, Inc.	Integrated circuit with improved power supply distribution
JP2758504B2 (ja) *	1990-07-06	1998-05-28	松下電器産業株式会社	半導体記憶装置
JPH0562461A (ja) *	1991-04-09	1993-03-12	Mitsubishi Electric Corp	半導体記憶装置
KR940003410B1 (ko) *	1991-08-01	1994-04-21	삼성전자 주식회사	망사 구조의 전원선을 가지는 반도체 메모리 장치
US5325336A (en) *	1992-09-10	1994-06-28	Mitsubishi Denki Kabushiki Kaisha	Semiconductor memory device having power line arranged in a meshed shape
JP2792795B2 (ja) *	1992-10-29	1998-09-03	三菱電機株式会社	半導体集積装置
KR970005691B1 (ko) *	1993-09-06	1997-04-18	삼성전자주식회사	전원노이즈감소를 위한 전원라인구조를 가지는 반도체칩

1995
- 1995-01-17 JP JP7004551A patent/JPH08195083A/ja active Pending
1996
- 1996-01-16 US US08/586,947 patent/US5699289A/en not_active Expired - Lifetime
- 1996-01-16 CN CN96100436A patent/CN1084516C/zh not_active Expired - Fee Related
- 1996-01-16 KR KR1019960000750A patent/KR100196017B1/ko not_active IP Right Cessation
- 1996-02-02 TW TW085101331A patent/TW281767B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
JPH08195083A (ja)	1996-07-30
US5699289A (en)	1997-12-16
CN1084516C (zh)	2002-05-08
KR100196017B1 (ko)	1999-06-15
KR960030233A (ko)	1996-08-17
CN1134023A (zh)	1996-10-23

Publication	Publication Date	Title
DE69638352D1 (zh)	2011-05-19
DE69637714D1 (zh)	2008-11-27
IN185295B (zh)	2000-12-23
TW281767B (zh)	1996-07-21
DK143195A (zh)	1997-05-04
IN187198B (zh)	2002-02-23
FR2730754B3 (zh)	1997-02-07
GB9614320D0 (zh)	1996-09-04
DK0727898T3 (zh)	1997-03-17
IN183493B (zh)	2000-01-15
IN187708B (zh)	2002-06-08
IN183427B (zh)	2000-01-01
IN183000B (zh)	1999-08-21
IN184501B (zh)	2000-08-26
IN186221B (zh)	2001-07-14
IN183453B (zh)	2000-01-08
AU1627395A (zh)	1995-06-30
DK126096A (zh)	1996-11-08
CN3038187S (zh)	1995-12-06
CN3035871S (zh)	1995-10-04
EP0730182A3 (zh)	1996-09-25
CN3031926S (zh)	1995-05-17
EP0765851A3 (zh)	1997-05-02
EP0840665A4 (zh)	1998-06-10
CN3035869S (zh)	1995-10-04

Legal Events

Date	Code	Title	Description
2013-04-21	MM4A	Annulment or lapse of patent due to non-payment of fees