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TW201941356A - 靜電夾頭加熱器 - Google Patents

靜電夾頭加熱器 Download PDF

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TW201941356A
TW201941356A TW108105975A TW108105975A TW201941356A TW 201941356 A TW201941356 A TW 201941356A TW 108105975 A TW108105975 A TW 108105975A TW 108105975 A TW108105975 A TW 108105975A TW 201941356 A TW201941356 A TW 201941356A
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wafer
electrostatic chuck
chuck heater
mounting surface
convex ring
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TW108105975A
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TWI791774B (zh
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海野豊
渡辺玲雄
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日商日本碍子股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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Abstract

一種靜電夾頭加熱器，其為用來在晶圓上形成導電膜的約翰遜-拉別克型靜電夾頭加熱器。此靜電夾頭加熱器具備附有靜電電極及電阻發熱體的圓板狀的陶瓷基體、安裝於與陶瓷基體之晶圓載置面相反的那側的面上的中空軸。凸狀環設於晶圓載置面上，其外徑比晶圓的直徑小。貫通孔被設置成從中空軸之周壁之下端貫通至晶圓載置面中凸狀環之內側。貫通孔可在晶圓載置面、凸狀環及載置於晶圓載置面上的晶圓所圍住的晶圓下方空間中從中空軸的下端供給氣體。

Description

靜電夾頭加熱器
本發明是關於一種靜電夾頭加熱器。
過去，已知有一種支持晶圓的晶圓支持台。例如，專利文獻1的晶圓支持台110如圖10所示，具備載置晶圓W的陶瓷基體120、安裝於與陶瓷基體120之載置晶圓W的那面相反的面的中空軸140及設置成從中空軸140之周壁之下端貫通至陶瓷基體120之外周面的貫通孔142。供給至貫通孔142的吹掃氣體在噴向陶瓷基體120的外周面之後，通過晶圓W與環130之間，再從上方出去（圖10的虛線箭頭）。此吹掃氣體在藉由CVD技術於晶圓W的上面形成薄膜時，防止於晶圓W的邊緣形成薄膜。
［先前技術文獻］
［專利文獻］
［專利文獻1］特許第5324627號公報
［發明所欲解決之問題］
不過，在晶圓W外周緣的背面，吹掃氣體的氣流是由外向內，所以，如圖11所示，當藉由CVD技術在晶圓W上形成導電膜F時，在陶瓷基體120的晶圓接觸面122與晶圓W之間有時可能會有導電膜F進入。當晶圓W支持台110具有藉由約翰遜-拉別克力將晶圓W吸附保持在陶瓷基體120上的功能時，晶圓接觸面122與晶圓W之間若有導電膜F進入，吸附力有時會下降。換言之，若取下經過CVD技術處理後的晶圓W而更換成新的晶圓W，新的晶圓W與陶瓷基體120的晶圓接觸面122透過導電膜F而形成同電位，所以，不會出現充足的約翰遜-拉別克力，於是產生吸附力下降的現象。
本發明為用來解決上述課題的發明，主要目的是為了穩定夾持晶圓。
［用以解決課題之手段］
本發明之靜電夾頭加熱器，其為用來在晶圓上形成導電膜的約翰遜-拉別克型靜電夾頭加熱器，其特徵為，具備：
圓板狀的陶瓷基體，其中一面為載置上述晶圓的晶圓載置面且具備靜電電極及電阻發熱體；
中空軸，安裝於上述陶瓷基體中與上述晶圓載置面相反的那側的面上；
凸狀環，設於上述晶圓載置面上且外徑比上述晶圓的直徑小；及
貫通孔，被設置成從上述中空軸之周壁之下端貫通至上述晶圓載置面中上述凸狀環之內側，且可在上述晶圓載置面、上述凸狀環及載置於上述晶圓載置面上的上述晶圓所圍住的晶圓下方空間中從上述中空軸的下端供給氣體。
當使用此靜電夾頭加熱器時，在載置於凸狀環上的晶圓的表面形成導電膜，但與此同時，在晶圓載置面的凸狀環的外側區域上亦有導電膜附著。在此，凸狀環的外徑比晶圓的直徑小，所以，從俯視圖來看，凸狀環為被晶圓覆蓋隱藏的狀態。因此，與晶圓背面銜接的凸狀環的上面難以被導電膜附著。又，晶圓下方空間被供給氣體，所以，凸狀環與晶圓之間的間隙難以被用來形成導電膜的成分進入，也因為此點，凸狀環的上面難以被導電膜附著。因此，即使在晶圓上已形成導電膜後的凸狀環的上面載置晶圓，晶圓也能與未附著導電膜的凸狀環的上面密合。因此，晶圓夾持力，亦即，約翰遜-拉別克力，得以維持最初的狀態。於是，即使製程次數增加，也能穩定夾持晶圓。
在本發明之靜電夾頭加熱器中，於上述晶圓載置面中上述凸狀環的內側，宜設有可與上述晶圓銜接的複數個壓凸。如此，晶圓與陶瓷基體的接觸面積可變得比壓凸的面積大，所以，晶圓夾持力也變大，可更穩定地夾持晶圓。
在本發明之靜電夾頭加熱器中，上述凸狀環宜具備連通上述凸狀環之內外的狹縫。如此，晶圓下方空間內的氣體從晶圓中央向外周流動，所以，藉由該流動使得凸狀環與晶圓之間的間隙難以有用來形成導電膜的成分進一步進入。
在本發明之靜電夾頭加熱器中，上述貫通孔中作為上述晶圓載置面上的開口部在構造上宜為外徑比上述貫通孔小的複數個小孔。如此，通過貫通孔的氣體在晶圓的背面分散開來，所以，相較於氣體集中於晶圓背面一個位置的情況，可更穩定地夾持晶圓，進而抑制氣體導致晶圓的溫度下降。
在本發明之靜電夾頭加熱器中，供給至上述晶圓下方空間的氣體上推上述晶圓的力宜設定得比藉由與上述靜電電極通電所產生的晶圓夾持力與上述晶圓上方之環境氣體下推上述晶圓的力的總和小。如此，可藉由供給至晶圓下方空間的氣體防止晶圓浮上來。
在本發明之靜電夾頭加熱器中，上述靜電電極宜亦作為電漿電極來使用。藉由對靜電電極施加高頻波，可將靜電電極作為電漿電極來使用，於是可採用電漿CVD製程來進行成膜。
在本發明之靜電夾頭加熱器中，在上述凸狀環的內側宜具有複數個環狀及/或放射狀的溝。藉由在凸狀環的內側設置此種溝，可使晶圓下方空間內的氣流變得均勻，所以，使凸狀環與晶圓之間的間隙更難被形成導電膜的成分進入。此外，溝的深度宜在0.1mm以下，溝的寬度宜在5mm以下。
在本發明之靜電夾頭加熱器中，上述凸狀環的表面粗度Ra宜在1µm以上。如此，晶圓下方空間內的氣體從晶圓中央通過凸狀環較粗的上面流到外周，所以，藉由該氣流，凸狀環與晶圓之間的間隙更難以被形成導電膜的成分進入。
在本發明之靜電夾頭加熱器中，上述貫通孔宜位於上述晶圓載置面的上述凸狀環的內側，其宜在上述晶圓載置面的中央部及外周部的這兩處開口。如此，從晶圓載置面的外周部的開口進入晶圓下方空間的氣體距離凸狀環很近，所以，可更輕易防止凸狀環與晶圓之間的間隙被形成導電膜的成分進入。
以下將一邊參照圖面，一邊說明本發明的最佳實施型態。圖1係靜電夾頭加熱器10的立體圖，圖2係靜電夾頭加熱器10的俯視圖，圖3係圖2的A－A剖面圖。
靜電夾頭加熱器10為可用CVD等技術在晶圓W上形成導電膜，其具備陶瓷基體20及中空軸40。
陶瓷基體20為氮化鋁製的圓板。陶瓷基體20的直徑不受特別限定，例如，可為300mm。陶瓷基體20具有用來載置晶圓W的載置面20a及與載置面20a相反的那側的背面20b。陶瓷基體20在晶圓載置面20a上具有卡環22。卡環22為凸狀環，設置成與陶瓷基體20同心的同心圓。卡環22與陶瓷基體20一體形成，其外徑比晶圓W的直徑小。在被晶圓載置面20a的卡環22圍住的環內區域20c中，設有隔出間隔而設置的多個扁平圓柱狀的壓凸24。壓凸24與卡環22一起與晶圓W的背面接觸並支持晶圓W。
在陶瓷基體20上，埋設有靜電電極26及電阻發熱體28。靜電電極26為外徑稍稍小於陶瓷基體20的圓形薄層電極，例如，可將細金屬線編織成網狀，再以薄片狀的網眼來形成。在靜電電極26上，連接有未圖示出的供電棒，供電棒經過中空軸40的內部空間連接至未圖示出的外部電源。靜電電極26在藉由外部電源施加電壓時，吸附保持載置於晶圓載置面20a的晶圓W。此時的吸附力由於用來形成陶瓷基體20的氮化鋁的體積電阻率為1×108 ～1×1013 Ωcm，所以為約翰遜-拉別克力。電阻發熱體28使導電性的線圈跨越整個陶瓷基體20以一氣呵成的方式來配線。在電阻發熱體28的兩端，分別連接有未圖示出的供電棒，供電棒經由中空軸40的內部空間連接至未圖示出的加熱器電源。電阻發熱體28在從加熱器電源供給電力時，發熱且對載置於晶圓載置面20a的晶圓W加熱。電阻發熱體28不限定為線圈，其亦可為帶狀物（細長薄板），亦可為網狀物。
中空軸40跟陶瓷基體20一樣，以氮化鋁來形成，藉由使上端面與陶瓷基體20的背面20b固相接合或擴散接合來進行安裝。在中空軸40的周壁，沿著周方向以等間隔設置4個貫通孔42。貫通孔42從中空軸40的下端沿著上下方向貫通至陶瓷基體20的環內區域20c。貫通孔42在環狀區域20c中的中空軸40的周壁的正上方開口。貫通孔42的開口42a設置於環內區域20c中不與壓凸24干涉的位置。在貫通孔42上，連接有未圖示出的氣體供給源。
接著，將說明靜電夾頭加熱器10的使用例。在未圖示出的CVD用處理室內配置靜電夾頭加熱器10，在晶圓載置面20a的多個壓凸24及卡環22上載置晶圓W。此時，晶圓載置面20a、卡環22及晶圓W所圍住的空間稱為晶圓下方空間S。另外，藉由對靜電電極26施加電壓，以約翰遜-拉別克力吸附保持晶圓W。又，根據未圖示出的熱電對的檢出訊號來求晶圓W的溫度，控制對電阻發熱體28施加的電壓，以使其溫度成為目標溫度。再者，從氣體供給源對貫通孔42供給氣體。藉此，供給至貫通孔42的氣體從環內區域20c的開口42a進入晶圓下方空間S，通過壓凸24與壓凸24之間再朝向外周流出（圖3的虛線箭頭）。在此狀態下，以CVD技術在晶圓W的上面形成導電膜F（參照圖4）。
此時，供給至晶圓下方空間S的氣體上推晶圓W的力設定得比與靜電電極26通電所產生的晶圓夾持力與晶圓W上方的環境氣體下推晶圓W的力的總和小。因此，可藉由供給至晶圓下方空間S的氣體防止晶圓W浮上來。
在晶圓W的表面形成導電膜F的同時，陶瓷基體20的表面的卡環22的外側上也有導電膜F附著（參照圖4）。在此，卡環22的外徑比晶圓W的直徑小，所以，從俯視圖來看，卡環22為被晶圓W覆蓋隱藏的狀態。因此，與晶圓W的背面銜接的卡環22的上面難以有導電膜F附著。又，晶圓下方空間S被供給氣體，所以，卡環22與晶圓W之間的間隙難以有用來形成導電膜F的成分進入，也因為此點，卡環22的上面難以附著導電膜F。
根據以上所說明的靜電電極加熱器10，當在晶圓W的表面形成導電膜F時，可防止卡環22的上面有導電膜F附著。因此，即使在晶圓W上已形成導電膜F的卡環22的上面載置新的晶圓W，新的晶圓W也能與為附著導電膜F的卡環22的上面密合，約翰遜-拉別克力得以維持在最初的狀態。於是，即使製程數增加，也可穩定地夾持晶圓W。
又，若要對卡環22的上面附著導電膜F，需要一個移除附著在卡環22上面之導電膜F的清理步驟。此種清理步驟會使生產效率下降。在本實施型態中，由於不對卡環22的上面附著導電膜F，所以不需要此種清理步驟，於是提高了生產效率。
再者，在環內區域20c設有多個可與晶圓W銜接的壓凸24，所以，晶圓W與陶瓷基體20的接觸面積比壓凸24的面積大。因此，晶圓夾持力也變大，可更穩定地夾持晶圓。
此外，本發明不受上述實施型態的任何限定，只要在本發明的技術範圍內，可以各種型態實施本發明。
例如，在上述的實施型態中，卡環22的上面的表面粗度Ra可以粗至1µm以上。如此，晶圓下方空間S內的氣體從晶圓W的中央通過卡環22較粗的上面流至外周，所以，可藉由該氣流使卡環22與晶圓W之間的間隙更難以使用來形成導電膜F的成分進入。
在上述的實施型態中，如圖5所示，卡環22可具備與卡環22的內外連通的狹縫22a。在圖5中，與上述實施型態相同的構成要素附加相同符號。在圖5中，8個狹縫22a沿著卡環22的周方向以等間隔設置，但狹縫22a的數目並不受到特別限定。如此，晶圓下方空間S內的氣體變得容易從晶圓W的中央朝向卡環22的外周流動，所以，可藉由該氣流使卡環22與晶圓W之間的間隙更難使用來形成導電膜F的成分進入。
在上述的實施型態中，如圖6所示，在開口於貫通孔42之晶圓載置面20a的開口部，嵌入具備外徑比貫通孔42小之複數個小孔52的凸緣50。在此情況下，貫通孔42的開口部以複數個小孔52來構成。如此，通過貫通孔42的氣體藉由小孔52分散於晶圓W的背面，所以，相較於氣體集中於晶圓W之背面的情況，可更穩定地夾持晶圓W，進而可抑制氣體導致晶圓W的溫度下降。
在上述的實施型態中，如圖7所示，在陶瓷基體20的環內區域20c（晶圓載置面20a中的卡環22的內側的區域），可設置4個與貫通孔42之開口42a連結的放射狀溝20d及與各溝20d之外周端連結的環狀溝20e。在圖7中，與上述實施型態相同的構成要素附加相同符號，但省略壓凸24。如此，可藉由溝20d, 20e輕易使晶圓下方空間S內的氣體變得均勻，所以，卡環22與晶圓W之間的間隙更難以使用來形成導電膜F的成分進入。此外，溝20d, 20e的深度可在0.1mm以下，溝20d, 20e的寬度可在5mm以下。
在上述的實施型態中，如圖8及圖9所示，關於貫通孔42，在陶瓷基體20的內部可具有朝向半徑外方向延伸的分歧通道46。在圖8及圖9中，與上述實施型態相同的構成要素附加相同符號，但省略壓凸24。分歧通道46的外周側的端部與設置成與陶瓷基體20同心之同心圓的圓周孔47連通。圓周孔47的外徑比卡環22的內徑稍小。圓周孔47與沿著周方向以等間隔設置的複數個（在此為8個）鉛直孔48連通。鉛直孔48在環內區域20c的卡環22的旁邊開口。藉此，貫通孔42具有開口於環內區域20c中之晶圓載置面20a之中央部的開口42a及開口於外周部的開口42b（鉛直孔48的開口）這兩種開口。如此，從開口42b進入晶圓下方空間S的氣體距離卡環22很近，所以，可進一步防止卡環22與晶圓W之間的間隙有用來形成導電膜F的成分進入。
在上述的實施型態中，靜電電極26亦可作為電漿電極來使用。藉由對靜電電極26施加高頻波，可將靜電電極26作為電漿電極來使用，進而可以電漿CVD製程進行成膜。
在上述的實施型態中，在中空軸40的周壁沿著周方向以等間隔設置4個貫通孔，但貫通孔42的數目不限於4個，亦可為2個、3個或5個以上。
本申請案以2018年3月26日申請的美國臨時申請案第62/647, 965號為優先權主張的基礎，藉由引用，其全部內容皆包含在本說明書內。
［產業上可利性］
本發明可應用於用來在晶圓上形成導電膜的靜電夾頭加熱器。
10‧‧‧靜電夾頭加熱器
20‧‧‧陶瓷基體
20a‧‧‧晶圓載置面
20b‧‧‧背面
20c‧‧‧環內區域
20d, 20e‧‧‧溝
22‧‧‧卡環
22a‧‧‧狹縫
24‧‧‧壓凸
26‧‧‧靜電電極
28‧‧‧電阻發熱體
40‧‧‧中空軸
42‧‧‧貫通孔
42a, 42b‧‧‧開口
46‧‧‧分歧通道
47‧‧‧圓周孔
48‧‧‧鉛直孔
50‧‧‧塞子
52‧‧‧小孔
110‧‧‧晶圓載置台
120‧‧‧陶瓷基體
122‧‧‧晶圓接觸面
130‧‧‧環
140‧‧‧中空軸
142‧‧‧貫通孔
F‧‧‧導電膜
S‧‧‧晶圓下方空間
W‧‧‧晶圓
［圖1］係靜電夾頭加熱器10的立體圖。
［圖2］係靜電夾頭加熱器10的俯視圖。
［圖3］係圖2的A－A剖面圖。
［圖4］係形成導電膜F之後的靜電夾頭加熱器10的部分剖面圖。
［圖5］係具備附有狹縫22a之卡環22的靜電夾頭加熱器的俯視圖。
［圖6］係具備附有塞子50之貫通孔42的靜電夾頭加熱器的部分剖面圖。
［圖7］係在環內區域20c設置溝20d, 20e之靜電夾頭加熱器的俯視圖。
［圖8］係具備設有開口42a, 42b之貫通孔42的靜電夾頭加熱器的俯視圖。
［圖9］係圖8的B－B剖面圖。
［圖10］係習知之晶圓載置台110的剖面圖。
［圖11］係形成導電膜F之後的晶圓載置台110的部分剖面圖。

Claims (9)

  1. 一種靜電夾頭加熱器，其為用來在晶圓上形成導電膜的約翰遜-拉別克型靜電夾頭加熱器，其特徵為，具備： 圓板狀的陶瓷基體，其中一面為載置上述晶圓的晶圓載置面且具備靜電電極及電阻發熱體； 中空軸，安裝於上述陶瓷基體中與上述晶圓載置面相反的那側的面上； 凸狀環，設於上述晶圓載置面上且外徑比上述晶圓的直徑小；及 貫通孔，被設置成從上述中空軸之周壁之下端貫通至上述晶圓載置面中上述凸狀環之內側，且可在上述晶圓載置面、上述凸狀環及載置於上述晶圓載置面上的上述晶圓所圍住的晶圓下方空間中從上述中空軸的下端供給氣體。
  2. 如申請專利範圍第1項之靜電夾頭加熱器，其中，於上述晶圓載置面中上述凸狀環的內側，設有可與上述晶圓銜接的複數個壓凸。
  3. 如申請專利範圍第1或2項之靜電夾頭加熱器，其中，上述凸狀環具備連通上述凸狀環之內外的狹縫。
  4. 如申請專利範圍第1至3項中任一項之靜電夾頭加熱器，其中，上述貫通孔中上述晶圓載置面上的開口部在構造上為外徑比上述貫通孔小的複數個小孔。
  5. 如申請專利範圍第1至4項中任一項之靜電夾頭加熱器，其中，供給至上述晶圓下方空間的氣體上推上述晶圓的力比藉由與上述靜電電極通電所產生的晶圓夾持力與上述晶圓上方之環境氣體下推上述晶圓的力的總和小。
  6. 如申請專利範圍第1至5項中任一項之靜電夾頭加熱器，其中，上述靜電電極亦作為電漿電極來使用。
  7. 如申請專利範圍第1至6項中任一項之靜電夾頭加熱器，其中，在上述凸狀環的內側具有複數個環狀及/或放射狀的溝。
  8. 如申請專利範圍第1至7項中任一項之靜電夾頭加熱器，其中，上述凸狀環的表面粗度Ra在1µm以上。
  9. 如申請專利範圍第1至8項中任一項之靜電夾頭加熱器，其中，上述貫通孔位於上述晶圓載置面的上述凸狀環的內側，其在上述晶圓載置面的中央部及外周部的這兩處開口。
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