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TW201130156A - Sapphire single crystal for producing sapphire single crystal substrate for LED, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same - Google Patents

Sapphire single crystal for producing sapphire single crystal substrate for LED, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same

Info

Publication number
TW201130156A
TW201130156A TW099140694A TW99140694A TW201130156A TW 201130156 A TW201130156 A TW 201130156A TW 099140694 A TW099140694 A TW 099140694A TW 99140694 A TW99140694 A TW 99140694A TW 201130156 A TW201130156 A TW 201130156A
Authority
TW
Taiwan
Prior art keywords
single crystal
sapphire single
led
crystal substrate
preparing
Prior art date
Application number
TW099140694A
Other languages
English (en)
Inventor
Katsuki Kusunoki
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW201130156A publication Critical patent/TW201130156A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
TW099140694A 2009-11-26 2010-11-25 Sapphire single crystal for producing sapphire single crystal substrate for LED, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same TW201130156A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009269154 2009-11-26

Publications (1)

Publication Number Publication Date
TW201130156A true TW201130156A (en) 2011-09-01

Family

ID=44066508

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099140694A TW201130156A (en) 2009-11-26 2010-11-25 Sapphire single crystal for producing sapphire single crystal substrate for LED, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same

Country Status (4)

Country Link
KR (1) KR20120088756A (zh)
CN (1) CN102612575A (zh)
TW (1) TW201130156A (zh)
WO (1) WO2011065403A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013098298A (ja) * 2011-10-31 2013-05-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
JP2013245149A (ja) * 2012-05-28 2013-12-09 Sumitomo Chemical Co Ltd サファイア単結晶製造用原料アルミナ及びサファイア単結晶の製造方法
JP2014162673A (ja) * 2013-02-25 2014-09-08 Tokuyama Corp サファイア単結晶コアおよびその製造方法
WO2016153070A1 (ja) * 2015-03-26 2016-09-29 京セラ株式会社 サファイア部材、およびサファイア部材の製造方法
CN108884590A (zh) * 2016-03-30 2018-11-23 株式会社尼康 氧化铝、氧化铝的制造方法及光学元件
CN106764483B (zh) * 2016-11-30 2018-06-12 深圳市耀铭豪智能科技有限公司 一种led照明装置的制备方法
WO2021049170A1 (ja) * 2019-09-11 2021-03-18 日本碍子株式会社 １３族元素窒化物結晶層の製造方法、および種結晶基板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152289A (ja) * 1983-02-16 1984-08-30 Seiko Epson Corp スタ−ブル−サフアイヤの製造方法
JPH0818908B2 (ja) * 1986-10-27 1996-02-28 住友化学工業株式会社 ベルヌ−イ法単結晶用原料アルミナ粉末
CN1333467C (zh) * 2000-09-13 2007-08-22 晶元光电股份有限公司 白色发光二极管
TWI271877B (en) * 2002-06-04 2007-01-21 Nitride Semiconductors Co Ltd Gallium nitride compound semiconductor device and manufacturing method
JP2004123467A (ja) * 2002-10-03 2004-04-22 Shinkosha:Kk サファイア単結晶およびサファイア単結晶用原料
JP2005085888A (ja) * 2003-09-05 2005-03-31 Kyocera Corp 半導体素子用単結晶サファイア基板とその製造方法及びこれを用いたＧａＮ系半導体発光素子並びにＧａＮ系半導体白色発光素子
JP4908381B2 (ja) * 2006-12-22 2012-04-04 昭和電工株式会社 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP4844429B2 (ja) * 2007-02-26 2011-12-28 日立化成工業株式会社 サファイア単結晶の製造方法

Also Published As

Publication number Publication date
WO2011065403A1 (ja) 2011-06-03
CN102612575A (zh) 2012-07-25
KR20120088756A (ko) 2012-08-08

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