TW200727971A - Cleaning apparatus of exhaust gas produced from semiconductor production process and method thereof - Google Patents
Cleaning apparatus of exhaust gas produced from semiconductor production process and method thereofInfo
- Publication number
- TW200727971A TW200727971A TW095109435A TW95109435A TW200727971A TW 200727971 A TW200727971 A TW 200727971A TW 095109435 A TW095109435 A TW 095109435A TW 95109435 A TW95109435 A TW 95109435A TW 200727971 A TW200727971 A TW 200727971A
- Authority
- TW
- Taiwan
- Prior art keywords
- exhaust gas
- manufacturing process
- gas inlet
- gas produced
- supplying
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004140 cleaning Methods 0.000 title 1
- 238000001179 sorption measurement Methods 0.000 abstract 4
- 239000003054 catalyst Substances 0.000 abstract 2
- 238000006555 catalytic reaction Methods 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/86—Catalytic processes
- B01D53/8659—Removing halogens or halogen compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Environmental & Geological Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Biomedical Technology (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Treating Waste Gases (AREA)
- Exhaust Gas Treatment By Means Of Catalyst (AREA)
- Catalysts (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Abstract
Disclosed is an apparatus for treating exhaust gas produced in a semiconductor manufacturing process, including an exhaust gas inlet (2) for supplying exhaust gas; an air injection port (32) connected to the exhaust gas inlet (2) for supplying air; an adsorption part (4) connected to the exhaust gas inlet (2) and having an adsorption layer for adsorbing the exhaust gas supplied via the exhaust gas inlet (2); a catalysis part (6) connected to the adsorption part (4) and having a catalyst layer (18) for catalytically treating the exhaust gas supplied from the adsorption part (4); and a water supply port (26) connected to a flow path of the exhaust gas flowing to the catalysis part (6) for supplying water. According to this invention, from the exhaust gas produced in a semiconductor manufacturing process or an LCD manufacturing process, recalcitrant decomposable perfluorocompounds can be removed at 800 DEG C or less, and the exhaust gas containing the perfluorocompounds at large amounts and/or high concentrations can be treated depending on the amount of charged catalyst.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060008037A KR100654922B1 (en) | 2006-01-26 | 2006-01-26 | Flue gas treatment apparatus and method generated from semiconductor manufacturing process |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200727971A true TW200727971A (en) | 2007-08-01 |
TWI288655B TWI288655B (en) | 2007-10-21 |
Family
ID=37732414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095109435A TWI288655B (en) | 2006-01-26 | 2006-03-20 | Cleaning apparatus of exhaust gas produced from semiconductor production process and method thereof |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4768470B2 (en) |
KR (1) | KR100654922B1 (en) |
CN (1) | CN100540120C (en) |
TW (1) | TWI288655B (en) |
WO (1) | WO2007086624A1 (en) |
Families Citing this family (38)
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KR100779363B1 (en) | 2006-12-05 | 2007-11-28 | 동부일렉트로닉스 주식회사 | Cartridge comprising a porous filter for removing hydrogen bromide (HBR) and a porous filter for removing hydrogen bromide (HBR) prepared by the above method |
KR101178918B1 (en) | 2010-05-27 | 2012-09-03 | 주식회사 세미라인 | An apparatus for treatment of Fluorine compound and method of treating for Fluorine compound gas |
CN101898067A (en) * | 2010-07-19 | 2010-12-01 | 北京雪迪龙科技股份有限公司 | Gas purifier and regeneration method of molecular sieve thereof |
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KR101229946B1 (en) | 2011-04-22 | 2013-02-05 | 주식회사 이엔 | Fabrication method of catalyst based on the nano-silica to decompose PFC gaseous from semiconductor process, and Catalyst based on the nano-silicate to decompose the PFC manufactured by the same |
KR101406198B1 (en) | 2011-05-31 | 2014-06-12 | 주식회사 코캣 | Catalyst for removing SF6 and preparatio method thereof |
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KR20140092335A (en) * | 2011-10-19 | 2014-07-23 | 쇼와 덴코 가부시키가이샤 | Perfluoride decomposition treatment method and treatment device |
KR101407115B1 (en) * | 2012-03-26 | 2014-06-13 | (주) 세라컴 | Method for treating hazardous gas generated in semiconductor manufacturing process |
KR101387611B1 (en) | 2012-04-23 | 2014-05-07 | 주식회사 글로벌스탠다드테크놀로지 | Apparatus and method of treating perfluoro compounds |
CN104548927B (en) * | 2015-01-07 | 2017-01-25 | 黎明化工研究设计院有限责任公司 | Process for removing trace nitrogen trifluoride in carbon tetrafluoride |
KR101670461B1 (en) * | 2015-06-11 | 2016-11-01 | 주식회사 테라세미콘 | Apparatus for treating exhaust gas comprising hydrogen |
KR101866994B1 (en) * | 2015-10-30 | 2018-06-15 | 한국생산기술연구원 | Method for Treating Perfluorinated compounds Using Liquid Metal |
CN108290113A (en) * | 2015-12-01 | 2018-07-17 | 昭和电工株式会社 | The processing method of exhaust gas containing fluorine element |
KR101802167B1 (en) * | 2016-06-21 | 2017-12-04 | 선문대학교 산학협력단 | Exhaust Line Structure in Apparatus for Semiconductor Processing |
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KR101825825B1 (en) * | 2016-08-02 | 2018-02-06 | 주식회사 에코프로 | INTEGRATED ABATEMENT SYSTEM FOR COMPLEX WASTE GAS INCLUDING NOx, NITROUS OXIDE, CHLOROFLUOROCARBONS, HYDROCHLOROFLUOROCARBONS, HYDROFLUOROCARBONS, AND PERFLUOROCOMPOUNDS |
KR102041555B1 (en) * | 2017-10-27 | 2019-11-06 | (주)명성씨.엠.아이 | Toxic gas treating system |
KR20190053556A (en) | 2017-11-10 | 2019-05-20 | 주식회사 에코프로 | Method of removing nitrogen trifluoride(nf3) in waste gas-disposing apparatus |
CN108525507A (en) * | 2018-04-20 | 2018-09-14 | 苏州宏久航空防热材料科技有限公司 | A kind of sulphur removal removes nitre integration filter pipe |
CN109432946A (en) * | 2018-11-13 | 2019-03-08 | 福建博纯材料有限公司 | A kind of vent gas treatment bucket of arsine |
KR102129988B1 (en) * | 2020-03-06 | 2020-07-03 | 주식회사 퓨어스피어 | Apparatus for treating waste gas in producing semiconductor and method for treating waste gas |
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KR102588533B1 (en) * | 2021-06-04 | 2023-10-12 | 엠에이티플러스 주식회사 | Apparatus for treating waste gas of electronics industry |
CN113578285B (en) * | 2021-08-06 | 2022-04-19 | 福建德尔科技有限公司 | High-cohesive-energy fluoride adsorbent, preparation and application |
CN113648806B (en) * | 2021-08-11 | 2023-09-22 | 上海协微环境科技有限公司 | Device for purifying fluoride in waste gas of semiconductor manufacturing process |
CN114797449B (en) * | 2022-04-13 | 2023-06-27 | 中南大学 | A method for recycling CF4 and HF by-products in electrolytic aluminum flue gas based on θ-Al2O3 catalyst |
CN114950339A (en) * | 2022-05-27 | 2022-08-30 | 常州诚鉺正环保技术有限公司 | Adsorbent for fluorine-containing gas and preparation method thereof |
WO2023235397A1 (en) * | 2022-06-03 | 2023-12-07 | Entegris, Inc. | Filtration in a vapor delivery system |
KR20240032247A (en) * | 2022-09-01 | 2024-03-12 | 주식회사 에코프로에이치엔 | Perfluorinated compounds reduction system |
KR102750033B1 (en) | 2022-10-04 | 2025-01-03 | 주식회사 에스엠티 | Device for connecting fluid pipes for semiconductor equipment |
CN115999341B (en) * | 2023-01-31 | 2025-03-18 | 国网江苏省电力有限公司 | A device and method for deep decomposition and adsorption of SF6 gas in a limited space |
CN115826548B (en) * | 2023-02-22 | 2023-06-13 | 中国电子工程设计院有限公司 | Method and device for dynamically simulating waste gas treatment of semiconductor production system |
KR102724340B1 (en) | 2023-10-30 | 2024-10-31 | 박선혜 | Cleaning apparatus of exhaust gas produced from semiconductor production process |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5248956B2 (en) * | 1973-11-17 | 1977-12-13 | ||
JPH01139125A (en) * | 1987-08-24 | 1989-05-31 | Toshiba Corp | Exhaust treatment equipment |
GB8813270D0 (en) * | 1988-06-04 | 1988-07-06 | Plasma Products Ltd | Dry exhaust gas conditioning |
JPH03249920A (en) * | 1990-02-27 | 1991-11-07 | Mitsubishi Heavy Ind Ltd | Method for decomposing gaseous fluorocarbon |
JP2972975B2 (en) * | 1993-12-22 | 1999-11-08 | 日本酸素株式会社 | Hazardous exhaust gas abatement method and abatement agent |
JPH09290128A (en) * | 1996-04-25 | 1997-11-11 | Babcock Hitachi Kk | Exhaust gas processing apparatus and method for controlling its operation |
JPH10216479A (en) * | 1997-01-31 | 1998-08-18 | Mitsui Chem Inc | Detoxifying method of gaseous nitrogen trifluoride |
JP3893023B2 (en) * | 1997-10-17 | 2007-03-14 | 株式会社荏原製作所 | Semiconductor manufacturing exhaust gas treatment method and apparatus |
JP2001293335A (en) * | 2000-04-12 | 2001-10-23 | Ebara Corp | Method for treating waste gas containing fluoride |
JP3927359B2 (en) | 2000-08-12 | 2007-06-06 | 秋史 西脇 | Exhaust gas treatment equipment |
KR100444885B1 (en) * | 2001-02-28 | 2004-08-18 | 주식회사 코캣 | Cleaning method of particles and moisture contained in the exhaust gas |
US20030072703A1 (en) * | 2001-09-13 | 2003-04-17 | Toshikazu Sugiura | Method for removing the harmful effects of organic halogen compound gas, apparatus for removing the harmful effects of organic halogen compound gas, system for fabricating semiconductor devices, and method for fabricating semiconductor devices |
JP3737082B2 (en) * | 2001-12-04 | 2006-01-18 | 株式会社荏原製作所 | Exhaust gas treatment method and apparatus |
-
2006
- 2006-01-26 KR KR1020060008037A patent/KR100654922B1/en not_active Expired - Fee Related
- 2006-02-21 JP JP2006044390A patent/JP4768470B2/en not_active Expired - Fee Related
- 2006-03-02 CN CNB200610007988XA patent/CN100540120C/en not_active Expired - Fee Related
- 2006-03-07 WO PCT/KR2006/000787 patent/WO2007086624A1/en active Application Filing
- 2006-03-20 TW TW095109435A patent/TWI288655B/en active
Also Published As
Publication number | Publication date |
---|---|
CN101007237A (en) | 2007-08-01 |
CN100540120C (en) | 2009-09-16 |
JP4768470B2 (en) | 2011-09-07 |
TWI288655B (en) | 2007-10-21 |
JP2007196204A (en) | 2007-08-09 |
KR100654922B1 (en) | 2006-12-06 |
WO2007086624A1 (en) | 2007-08-02 |
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