KR102724340B1 - Cleaning apparatus of exhaust gas produced from semiconductor production process - Google Patents
Cleaning apparatus of exhaust gas produced from semiconductor production process Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004140 cleaning Methods 0.000 title description 2
- 239000007789 gas Substances 0.000 claims abstract description 124
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims abstract description 96
- 239000012528 membrane Substances 0.000 claims abstract description 66
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910001868 water Inorganic materials 0.000 claims abstract description 64
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 56
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 52
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 42
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 4
- 238000007872 degassing Methods 0.000 claims description 24
- 230000001105 regulatory effect Effects 0.000 claims description 24
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 23
- 238000011084 recovery Methods 0.000 claims description 15
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 238000000746 purification Methods 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 description 16
- 238000009434 installation Methods 0.000 description 11
- 238000000197 pyrolysis Methods 0.000 description 11
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 description 4
- 239000001569 carbon dioxide Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 239000003546 flue gas Substances 0.000 description 2
- 239000003949 liquefied natural gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 2
- 235000019645 odor Nutrition 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- -1 F2 Chemical compound 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000007233 catalytic pyrolysis Methods 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
- B01D19/0021—Degasification of liquids by bringing the liquid in a thin layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/005—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by heat treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/22—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by diffusion
- B01D53/228—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by diffusion characterised by specific membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/75—Multi-step processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/78—Liquid phase processes with gas-liquid contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
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- Manufacturing & Machinery (AREA)
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Thermal Sciences (AREA)
- Treating Waste Gases (AREA)
Abstract
본 발명은 반도체 제조공정에서 발생하는 배가스 처리장치에 관한 것으로서, 반도체 제조공정에서 발생하는 배가스를 열분해시켜서 수소 대비 물에 대한 용해도가 높은 암모니아(NH3), 플루오린화 수소(HF), 황화수소(H2S), 이산화질소(NO2)로 전환시키는 열분해기; 및 상기 열분해기에 의해 전환된 NH3, HF, H2S, NO2 및 N2와 O2 가스를 공정수와의 막접촉에 의해 NH3, HF, H2S, NO2는 공정수에 의해 용해시킴에 따라 흡수시키고, N2와 O2 만 대기로 배출시키도록 하는 분리막 접촉기를 포함하여 구성된다.The present invention relates to a device for treating exhaust gas generated in a semiconductor manufacturing process, comprising: a thermal decomposer that thermally decomposes exhaust gas generated in a semiconductor manufacturing process and converts it into ammonia (NH 3 ), hydrogen fluoride (HF), hydrogen sulfide (H 2 S), and nitrogen dioxide (NO 2 ), which have higher solubility in water than hydrogen; and NH 3 , converted by the thermal decomposer. With HF, H2S , NO2 and N2 O 2 gas is converted to NH 3 by membrane contact with process water, HF, H2S , NO2 are absorbed by dissolving in process water, and N2 and It is composed of a membrane contactor that allows only O2 to be discharged into the atmosphere.
Description
본 발명은 반도체 처리공정에서 발생하는 배가스 처리장치에 관한 것으로서, 보다 상세하게는 반도체 처리공정에서 발생하는 배가스를 열분해에 의해 공정수에 의한 용해도가 높은 물질로 변환시킨 후, 이를 분리막 접촉기에 의해 용해시켜서 분리함으로써, 유해 물질이 제거된 배가스만 대기 중으로 배출시키도록 하는 반도체 제조공정에서 발생하는 배가스 처리장치에 관한 것이다.The present invention relates to a device for treating exhaust gas generated in a semiconductor processing process, and more specifically, to a device for treating exhaust gas generated in a semiconductor manufacturing process, which converts exhaust gas generated in a semiconductor processing process into a substance having a high solubility in process water through thermal decomposition, and then separates the substance by dissolving it through a membrane contactor, thereby discharging only exhaust gas from which hazardous substances have been removed into the atmosphere.
일반적으로, 과불화화합물(PFCs)의 배출량은 이산화탄소의 수천분의 일 정도지만 지구 온난화 지수는 이산화탄소 보다 높고, 분해되지 않는 상태로 대기 중에 장시간 동안 존재하며 지구온난화의 주요 원인물질로 알려져 있다.In general, the amount of perfluorinated compounds (PFCs) emitted is only a thousandth of that of carbon dioxide, but their global warming potential is higher than that of carbon dioxide, and they remain in the atmosphere for a long time without decomposing, making them known as a major cause of global warming.
이에, 세계 각국은 1992년 6월에 브라질 리오 미팅에서 기후변화협약을 체결하고 과불화화합물을 지구온난화 가스로 규정하였으며, 2001년 11월 10일 교토 의정서를 체택하여, 이를 바탕으로 각국의 과불화화합물 배출기준 및 규제시기를 결정하였다. 이에, 미국, 일본 및 유럽 등과 같은 선진국들은 과불화화합물 배출저감 목표 기준을 1995년 대비 2010년까지 10%로 감축하도록 규정하였으며, 우리나라의 경우 1997년 대비 2010년까지 10% 감축, 그리고 대만은 1998년 대비 2010년까지 10%를 감축하도록 규정하게 되었다.Accordingly, countries around the world signed the Climate Change Convention at the Rio de Janeiro meeting in June 1992 and designated perfluorinated compounds as global warming gases, and adopted the Kyoto Protocol on November 10, 2001, and based on this, determined each country's perfluorinated compound emission standards and regulation period. Accordingly, developed countries such as the United States, Japan, and Europe stipulated a 10% reduction in perfluorinated compound emissions by 2010 compared to 1995, while Korea stipulated a 10% reduction by 2010 compared to 1997, and Taiwan stipulated a 10% reduction by 2010 compared to 1998.
한편, 지구온난화를 발생시키는 과불화화합물 중 일부의 물질은 악취 등을 동반하여 과불화화합물의 발생원, 예를 들면 반도체 제조공장 등의 주변에서 생활하고 있는 인근 주민의 민원발생 원인을 제공하고 있는 바, 이를 해결하기 위해 상기 악취원인 과불화화합물의 처리가 절실히 요구되고 있는 실정이다.Meanwhile, some of the perfluorinated compounds that cause global warming are accompanied by foul odors, etc., and are a cause of complaints from nearby residents living near the sources of the perfluorinated compounds, such as semiconductor manufacturing plants. Therefore, there is an urgent need to treat the perfluorinated compounds that are the source of the foul odors.
특히, 반도체 제조공정 중 에칭(Etching) 공정에서는 웨이퍼의 표면을 에칭하기 위하여 BCl3,Cl2, F2, HBr, HCl, HF 등의 산성가스 및 CF4, CHF3, C2F6, C3F8, C4F6, C4F8, C5F8NF3, SF6 등과 같은 과불화화합물이 사용하고, 화학 증기상 증착(CVD: Chemical Vapor Deposition) 공정 중 증착단계에서는 웨이퍼의 표면증착을 위하여 AsH3, NH3, PH3, SiH4, Si2H2Cl2 등과 같은 가스를 사용하며, 세정단계에서는 플라즈마 존재 하에서 NF3, C2F6, C3F8 등과 같은 과불화화합물을 사용하므로 이를 처리하기 위한 공정이 필수적으로 요구된다.In particular, in the etching process among semiconductor manufacturing processes, acid gases such as BCl3, Cl2 , F2 , HBr, HCl, HF and perfluorinated compounds such as CF4 , CHF3 , C2F6 , C3F8 , C4F6 , C4F8 , C5F8 NF3 , SF6 are used to etch the surface of the wafer, and in the deposition step of the chemical vapor deposition (CVD) process, gases such as AsH3 , NH3 , PH3 , SiH4 , Si2H2Cl2 are used to deposit gas on the surface of the wafer, and in the cleaning step, perfluorinated compounds such as NF3 , C2F6 , C3F8 are used in the presence of plasma, so a process for handling these is essential.
전술한 과불화화합물을 제거하기 위한 방법으로는 직접연소법, 간접히팅법, 플라즈마법, 촉매법 등이 있으며, 직접연소법은 액화천연가스(LNG) 또는 수소의 연소시 발생하는 1,400 내지 1,600℃의 불꽃을 이용하여 과불화화합물을 산화시킴으로써 NH3, HF, H2S, NO2 등으로 전환되고, 전환된 이들 가스는 스크러버를 통과하여 최종적으로 정제가 이루어지게 된다.Methods for removing the aforementioned perfluorinated compounds include direct combustion, indirect heating, plasma, and catalytic methods. The direct combustion method uses a flame of 1,400 to 1,600°C generated when liquefied natural gas (LNG) or hydrogen is combusted to oxidize perfluorinated compounds, thereby converting them into NH3 , HF, H2S , NO2, etc., and these converted gases pass through a scrubber for final purification.
그런데, 스크러버는 기액 접촉이 원활하지 않아 용량이 크고, 유해가스 포집을 위한 용액을 많이 사용하게 되며, 또한 중화 약품을 사용해야 하는 단점이 있었다.However, scrubbers have the disadvantage of having a large capacity due to poor gas-liquid contact, using a lot of solution to capture harmful gases, and also having to use neutralizing chemicals.
이 때, 스크러버의 용량이 커짐에 따라 공간적 제약이 발생되어 설치가 어렵고, 설치 비용이 많이 들게 되는 단점이 있었다.At this time, as the capacity of the scrubber increased, there was a disadvantage in that it was difficult to install due to spatial constraints and the installation cost was high.
본 발명은 상기와 같은 제반 문제점들에 착안하여 안출된 것으로서, 본 발명이 해결하고자 하는 기술적 과제는, 반도체 제조공정에서 발생되는 배가스의 처리를 위한 장치를 컴팩트화 하여 설치면적을 줄임에 따라 상대적으로 좁은 환경에서도 설치가 쉽고, 설치비용을 줄일 수 있는 반도체 제조공정에서 발생하는 배가스 처리장치를 제공하는 것이다.The present invention has been conceived in consideration of the above-described various problems, and the technical problem that the present invention seeks to solve is to provide a device for treating exhaust gas generated in a semiconductor manufacturing process, which is compact and reduces the installation area, thereby making it easy to install even in a relatively narrow environment and reducing installation costs.
또한, 본 발명이 해결하고자 하는 다른 기술적 과제는, 반도체 제조공정에서 발생하는 배가스 중, 일부의 가스를 회수하여 반도체 제조공정에 재사용할 수 있도록 함으로써, 반도체 제조에 따른 비용을 줄일 수 있는 반도체 제조공정에서 발생하는 배가스 처리장치를 제공하는 것이다. In addition, another technical problem that the present invention seeks to solve is to provide a device for treating exhaust gas generated in a semiconductor manufacturing process, which can reduce the cost of semiconductor manufacturing by recovering some of the exhaust gas generated in the semiconductor manufacturing process and reusing it in the semiconductor manufacturing process.
본 발명의 과제들은 이상에서 언급한 과제로 제한되지 않으며, 언급되지 않은 또 다른 과제들은 아래의 기재로부터 당업자에게 명확하게 이해될 수 있을 것이다.The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.
상기 과제를 해결하기 위한 본 발명의 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치는, 반도체 제조공정에서 발생하는 배가스를 열분해시켜서 수소 대비 물에 대한 용해도가 높은 암모니아(NH3), 플루오린화 수소(HF), 황화수소(H2S), 이산화질소(NO2)로 전환시키는 열분해기; 및 상기 열분해기에 의해 전환된 NH3, HF, H2S, NO2 및 N2와 O2 가스를 공정수와의 막접촉에 의해 NH3, HF, H2S, NO2는 공정수에 의해 용해시킴에 따라 흡수시키고, N2와 O2 만 대기로 배출시키도록 하는 분리막 접촉기를 포함하는 구성으로 이루어질 수 있다.According to an embodiment of the present invention for solving the above problem, a device for treating exhaust gas generated in a semiconductor manufacturing process comprises: a thermal decomposer that thermally decomposes exhaust gas generated in a semiconductor manufacturing process and converts it into ammonia (NH 3 ), hydrogen fluoride (HF), hydrogen sulfide (H 2 S), and nitrogen dioxide (NO 2 ), which have higher solubility in water than hydrogen; and NH 3 , converted by the thermal decomposer. With HF, H2S , NO2 and N2 O 2 gas is converted to NH 3 by membrane contact with process water, HF, H2S , NO2 are absorbed by dissolving in process water, and N2 and It can be configured to include a membrane contactor that allows only O2 to be discharged into the atmosphere.
이 때, 반도체 제조공정에서 발생하는 배가스를 상기 열분해기에 의해 열분해시키기 이전에 열교환에 의해 상기 배가스의 온도를 상승시키기 위한 열교환기를 더 포함하는 구성일 수 있다.At this time, the configuration may further include a heat exchanger for increasing the temperature of the exhaust gas generated in the semiconductor manufacturing process through heat exchange before thermally decomposing the exhaust gas by the thermal decomposer.
한편, 상기 분리막 접촉기는, 배가스가 상기 열교환기와 상기 열분해기를 통과하여 수소 대비 물에 대한 용해도가 높은 NH3, HF, H2S, NO2 가스로 전환되어 N2와 O2 가스와 함께 유입되면, 공정수와의 막 접촉에 의해 공정수에 NH3, HF, H2S, NO2 가스가 용해되도록 하여 흡수시키고, N2와 O2 가스는 대기로 배출시키는 흡기 막 접촉기와, 상기 흡기 막 접촉기에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수를 공급받아 처리수에서 NH3, HF, H2S, NO2 가스를 탈기시키는 탈기 막 접촉기로 구성될 수 있다.Meanwhile, the membrane contactor, when the exhaust gas passes through the heat exchanger and the thermal decomposer, NH 3 , which has a high solubility in water compared to hydrogen, Converted to HF, H2S , NO2 gases and N2 and When introduced with O 2 gas, NH 3 is produced in the process water by membrane contact with the process water. Absorb HF, H2S , NO2 gases by dissolving them, and N2 and O 2 gas is discharged to the atmosphere through an intake membrane contactor, and NH 3 , through the intake membrane contactor Treated water containing HF, H2S , and NO2 gases dissolved in it is supplied, and NH3 , It can be configured with a degassing membrane contactor for degassing HF, H2S , NO2 gases.
또한, 반도체 제조공정에서 발생하는 배가스를 상기 열분해기에 의해 열분해시키기 이전에 상기 배가스의 압력을 상승시키는 압축기를 더 포함하는 구성으로 이루어질 수 있다.In addition, the device may be configured to further include a compressor that increases the pressure of the exhaust gas generated in the semiconductor manufacturing process before thermally decomposing the exhaust gas by the thermal decomposer.
또한, 상기 흡기 막 접촉기에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수를 탈기 막 접촉기로 공급하는 경로 상에 설치되어 상기 NH3, HF, H2S, NO2 가스의 압력을 조절하기 위한 복수의 압력조절밸브와, 상기 흡기 막 접촉기에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수를 탈기 막 접촉기로 공급하는 경로 상에 설치되되, 상기 복수의 압력조절밸브 사이에 배치되어 압력조절에 따른 용해도 차이에 의해 분리된 선택된 가스를 회수하여 저장하는 복수의 회수 탱크를 더 포함하는 구성으로 이루어질 수 있다.In addition, NH 3 , by the above-mentioned intake membrane contactor, It is installed on the path that supplies the treated water containing dissolved HF, H2S , NO2 gases to the degassing membrane contactor, and the NH3 , A plurality of pressure regulating valves for controlling the pressure of HF, H 2 S, NO 2 gases, and NH 3 , by the intake membrane contactor. The method may be configured to include a plurality of recovery tanks installed on a path for supplying treated water in which HF, H2S , and NO2 gases are dissolved to a degassing membrane contactor, and further including a plurality of recovery tanks arranged between the plurality of pressure regulating valves for recovering and storing selected gases separated by the difference in solubility according to pressure regulation.
본 발명의 기타 구체적인 사항들은 상세한 설명 및 도면들에 포함되어 있다.Other specific details of the present invention are included in the detailed description and drawings.
본 발명의 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치에 의하면, 반도체 제조공정에서 발생되는 배가스의 처리를 위한 장치가 컴팩트화 되어 설치면적이 줄게 됨에 따라 상대적으로 좁은 환경에서도 설치가 쉬워지고, 이에 따라 설치비용이 줄어들게 되는 효과가 제공될 수 있다.According to a device for treating exhaust gas generated in a semiconductor manufacturing process according to an embodiment of the present invention, a device for treating exhaust gas generated in a semiconductor manufacturing process is made compact, so that the installation area is reduced, making it easy to install even in a relatively narrow environment, and thus reducing installation costs.
또한, 본 발명의 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치에 의하면, 반도체 제조공정에서 발생하는 배가스 중, 일부의 가스가 회수되어 반도체 제조공정에 재사용 됨으로써, 반도체 제조에 따른 비용도 줄어들게 되는 효과도 제공될 수 있다.In addition, according to the exhaust gas treatment device generated in the semiconductor manufacturing process according to an embodiment of the present invention, some of the exhaust gas generated in the semiconductor manufacturing process is recovered and reused in the semiconductor manufacturing process, thereby providing the effect of reducing the cost of semiconductor manufacturing.
본 발명에 따른 효과는 이상에서 예시된 내용에 의해 제한되지 않으며, 더욱 다양한 효과들이 본 명세서 내에 포함되어 있다.The effects according to the present invention are not limited to those exemplified above, and further diverse effects are included in the present specification.
도 1은 본 발명의 제1 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치의 개념도.
도 2는 본 발명의 제2 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치의 개념도.
도 3은 본 발명의 제3 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치의 개념도.
도 4는 본 발명의 제4 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치의 개념도.Figure 1 is a conceptual diagram of a device for treating exhaust gas generated in a semiconductor manufacturing process according to a first embodiment of the present invention.
Figure 2 is a conceptual diagram of a device for treating exhaust gas generated in a semiconductor manufacturing process according to a second embodiment of the present invention.
Figure 3 is a conceptual diagram of a device for treating exhaust gas generated in a semiconductor manufacturing process according to a third embodiment of the present invention.
Figure 4 is a conceptual diagram of a device for treating exhaust gas generated in a semiconductor manufacturing process according to a fourth embodiment of the present invention.
본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 첨부되는 도면과 함께 상세하게 후술되어 있는 실시 예들을 참조하면 명확해질 것이다. 그러나 본 발명은 이하에서 개시되는 실시 예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시 예들은 본 발명의 개시가 완전하도록 하고, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다. 명세서 전체에 걸쳐 동일 참조 부호는 동일 구성 요소를 지칭한다.The advantages and features of the present invention, and the methods for achieving them, will become clear with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and the present embodiments are provided only to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.
따라서, 몇몇 실시 예에서, 잘 알려진 공정 단계들, 잘 알려진 구조 및 잘 알려진 기술들은 본 발명이 모호하게 해석되는 것을 피하기 위하여 구체적으로 설명되지 않는다.Accordingly, in some embodiments, well-known process steps, well-known structures, and well-known techniques are not specifically described to avoid obscuring the present invention.
본 명세서에서 사용된 용어는 실시 예들을 설명하기 위한 것이며 본 발명을 제한하고자 하는 것은 아니다. 본 명세서에서, 단수형은 문구에서 특별히 언급하지 않는 한 복수형도 포함한다. 명세서에서 사용되는 포함한다(comprises) 및/또는 포함하는(comprising)은 언급된 구성요소, 단계 및/또는 동작 이외의 하나 이상의 다른 구성요소, 단계 및/또는 동작의 존재 또는 추가를 배제하지 않는 의미로 사용한다. 그리고, "및/또는"은 언급된 아이템들의 각각 및 하나 이상의 모든 조합을 포함한다.The terminology used herein is for the purpose of describing embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless the context clearly dictates otherwise. The terms “comprises” and/or “comprising,” as used herein, are used to mean that they do not exclude the presence or addition of one or more other elements, steps, and/or operations other than the mentioned elements, steps, and/or operations. In addition, “and/or” includes each and every combination of one or more of the mentioned items.
또한, 본 명세서에서 기술하는 실시 예들은 본 발명의 이상적인 예시도인 사시도, 단면도, 측면도 및/또는 개략도들을 참고하여 설명될 것이다. 따라서, 제조 기술 및/또는 허용 오차 등에 의해 예시도의 형태가 변형될 수 있다. 따라서, 본 발명의 실시 예들은 도시된 특정 형태로 제한되는 것이 아니라 제조 공정에 따라 생성되는 형태의 변화도 포함되는 것이다. 또한, 본 발명의 실시 예에 도시된 각 도면에 있어서 각 구성 요소들은 설명의 편의를 고려하여 다소 확대 또는 축소되어 도시된 것일 수 있다.In addition, the embodiments described in this specification will be explained with reference to perspective views, cross-sectional views, side views, and/or schematic drawings, which are ideal examples of the present invention. Accordingly, the form of the examples may be modified due to manufacturing techniques and/or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms illustrated, but also include changes in form created according to the manufacturing process. In addition, in each drawing illustrated in the embodiments of the present invention, each component may be illustrated to some extent enlarged or reduced for convenience of explanation.
이하, 본 발명의 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치를 첨부된 예시도면에 의거하여 상세히 설명한다.Hereinafter, a device for treating exhaust gas generated in a semiconductor manufacturing process according to an embodiment of the present invention will be described in detail based on the attached exemplary drawings.
<제1 실시 예><First embodiment>
도 1은 본 발명의 제1 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치의 개념도이다.FIG. 1 is a conceptual diagram of a device for treating exhaust gas generated in a semiconductor manufacturing process according to a first embodiment of the present invention.
도 1을 참조하면, 본 발명의 제1 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치는, 반도체 제조공정에서 발생되는 배가스 즉, 삼불화질소(NF3), 과불화화합물(PFC), 황(S) 화합물을 비롯하여 질소(N2) 및 이산화탄소(O2)를 포함하는 배가스를 열분해시켜서 수소 대비 물에 대한 용해도가 높은 암모니아(NH3), 플루오린화 수소(HF), 황화수소(H2S), 이산화질소(NO2)로 전환시키는 열분해기(10)를 포함할 수 있다.Referring to FIG. 1, a device for treating exhaust gas generated in a semiconductor manufacturing process according to a first embodiment of the present invention may include a pyrolysis device (10) that thermally decomposes exhaust gas generated in a semiconductor manufacturing process, that is, exhaust gas containing nitrogen (N 2 ) and carbon dioxide (O 2 ), including nitrogen trifluoride (NF 3 ), perfluorinated compounds (PFCs), and sulfur (S) compounds, to convert the exhaust gas into ammonia (NH 3 ), hydrogen fluoride (HF), hydrogen sulfide (H 2 S), and nitrogen dioxide (NO 2 ), which have higher solubility in water than hydrogen.
이러한 열분해기(10)는 NF3, PFC, S 화합물 및 N2와 O2를 열분해시켜서 수소 대비 물에 대한 용해도가 높은 NH3, HF, H2S, NO2 및 N2와 O2로 전환시키는 기능을 수행하게 된다.This pyrolysis device (10) is NF 3 , PFC, S compounds and N2 By thermally decomposing O2, NH3 , which has a higher solubility in water than hydrogen, is produced. With HF, H2S , NO2 and N2 It performs the function of converting to O2 .
여기서, 열분해기(10)는 고온 플라즈마, 연소열 열분해, 촉매 열분해 등 다양한 방식이 적용될 수 있다.Here, the pyrolysis device (10) can be applied in various ways, such as high-temperature plasma, combustion heat pyrolysis, and catalytic pyrolysis.
또한, 본 발명의 제1 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치는, 열분해기(10)에 의해 전환된 NH3, HF, H2S, NO2 및 N2와 O2 가스를 공정수와의 막접촉에 의해 NH3, HF, H2S, NO2는 공정수에 의해 용해시킴에 따라 흡수시키고, N2와 O2 만 대기로 배출시키도록 하는 분리막 접촉기(20)를 포함할 수 있다.In addition, the exhaust gas treatment device generated in the semiconductor manufacturing process according to the first embodiment of the present invention converts NH 3 , With HF, H2S , NO2 and N2 O 2 gas is converted to NH 3 by membrane contact with process water, HF, H2S , NO2 are absorbed by dissolving in process water, and N2 and It may include a membrane contactor (20) that allows only O2 to be discharged into the atmosphere.
분리막 접촉기(20)는, 헨리의 법칙(Henry's Law)에 의해 공정수가 NH3, HF, H2S, NO2를 용해시키면서 흡수하는 방식으로 작동될 수 있다.The membrane contactor (20) is a process water NH3 , according to Henry's Law. It can be operated by dissolving and absorbing HF, H2S , and NO2 .
즉, 분리막 접촉기(20)는, 고분자막을 사이에 두고 기체와 액체가 접촉할 수 있는 형태로서, 분리막 접촉기(20)에 물일 수 있는 공정수가 주입되어 분리막 접촉기(20)를 통과하면서 NH3, HF, H2S, NO2를 흡기한 후, 후 공정인 수처리에 의해 배가스가 처리되도록 할 수 있다.That is, the membrane contactor (20) is a type in which gas and liquid can come into contact with each other through a polymer membrane, and process water, which may be water, is injected into the membrane contactor (20) and passes through the membrane contactor (20) to produce NH 3 , After absorbing HF, H2S , and NO2 , the exhaust gas can be treated through a post-process water treatment.
이 때, 분리막 접촉기(20)를 통과하면서 공정수에 용해되지 않은 N2와 O2 가스는 대기로 배출될 수 있다.At this time, N 2 that is not dissolved in the process water passes through the membrane contactor (20). O2 gas can be released into the atmosphere.
배가스 각 성분은 25도씨, 상압에서의 수소 대비 물에 대한 용해도는 아래 표 1과 같으므로, 공정수가 주입되어 분리막 접촉기를 통과한 배가스 중, NH3, HF, H2S, NO2는 공정수에 용해되어 흡기된 후, 후 공정인 수처리 과정을 통해 처리가 이루어지고, N2와 O2 가스는 공정수에 용해되지 않고 대기 중으로 배출이 이루어지게 된다.The solubility of each component of the flue gas in water compared to hydrogen at 25 degrees Celsius and normal pressure is as shown in Table 1 below. Therefore, among the flue gas that passed through the membrane contactor with process water injected, NH3 , HF, H2S , NO2 are dissolved in process water and absorbed, and then treated through the post-process water treatment process, and N2 and O2 gas does not dissolve in process water and is emitted into the atmosphere.
따라서, 본 발명의 제1 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치에 의하면, 반도체 제조공정에서 발생되는 배가스의 처리를 위한 장치가 컴팩트화 되어 설치면적이 줄게 됨에 따라 상대적으로 좁은 환경에서도 설치가 쉬워지고, 이에 따라 설치비용이 줄어들게 되는 효과가 제공될 수 있다.Therefore, according to the device for treating exhaust gas generated in a semiconductor manufacturing process according to the first embodiment of the present invention, the device for treating exhaust gas generated in a semiconductor manufacturing process is made compact, so that the installation area is reduced, making it easy to install even in a relatively narrow environment, and thus reducing the installation cost.
<제2 실시 예><Second embodiment>
도 2는 본 발명의 제2 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치의 개념도이다.FIG. 2 is a conceptual diagram of a device for treating exhaust gas generated in a semiconductor manufacturing process according to a second embodiment of the present invention.
참고로, 본 발명의 제2 실시 예를 설명함에 있어서 앞선 제1 실시 예에서와 동일한 부분에 대해서는 동일부호를 부여하고, 반복되는 설명은 생략하기로 한다.For reference, in describing the second embodiment of the present invention, the same parts as in the first embodiment are given the same reference numerals and repeated descriptions are omitted.
도 2를 참조하면, 본 발명의 제2 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치는, 앞선 제1 실시 예에서의 열분해기(10) 및 분리막 접촉기(20)와 더불어 열교환기(30)를 더 포함하는 구성으로 이루어질 수 있다.Referring to FIG. 2, the exhaust gas treatment device generated in a semiconductor manufacturing process according to the second embodiment of the present invention may be configured to further include a heat exchanger (30) in addition to the pyrolysis device (10) and membrane contactor (20) of the first embodiment.
즉, 반도체 제조공정에서 발생되는 배가스 즉, 삼불화질소(NF3), 과불화화합물(PFC), 황(S) 화합물을 비롯하여 질소(N2) 및 이산화탄소(O2)를 포함하는 배가스를 열분해시키기에 앞서 열교환에 의해 온도를 상승시키기 위한 열교환기(30)를 더 포함하는 구성으로 이루어질 수 있다.That is, it can be configured to further include a heat exchanger ( 30 ) for increasing the temperature through heat exchange prior to thermal decomposition of exhaust gas generated in a semiconductor manufacturing process, that is, exhaust gas containing nitrogen (N 2 ) and carbon dioxide (O 2 ), including nitrogen trifluoride (NF 3 ), perfluorinated compounds (PFCs), and sulfur (S) compounds.
따라서, 반도체 제조공정에서 발생하는 배가스는, 먼저 열교환기(30)를 통과하여 온도가 상승된 상태로 열분해기(10)로 공급이 이루어지게 됨으로써, 열분해기(10)의 작동을 위한 추가 열원 공급을 줄일 수 있게 됨으로써, 보다 에너지 효율이 향상되어 경제적인 운전이 가능하게 된다.Accordingly, the exhaust gas generated in the semiconductor manufacturing process first passes through the heat exchanger (30) and is supplied to the pyrolysis device (10) in a state where its temperature is increased, thereby reducing the additional heat source supply for the operation of the pyrolysis device (10), thereby improving energy efficiency and enabling economical operation.
<제3 실시 예><Third embodiment>
도 3은 본 발명의 제3 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치의 개념도이다.FIG. 3 is a conceptual diagram of a device for treating exhaust gas generated in a semiconductor manufacturing process according to a third embodiment of the present invention.
참고로, 본 발명의 제3 실시 예를 설명함에 있어서 앞선 실시 예들에서와 동일한 부분에 대해서는 동일부호를 부여하고, 반복되는 설명은 생략하기로 한다.For reference, in describing the third embodiment of the present invention, the same parts as in the previous embodiments are given the same reference numerals and repetitive descriptions are omitted.
도 3을 참조하면, 본 발명의 제3 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치는, 앞선 제2 실시 예에 따른 구성과 비교할 때, 분리막 접촉기(20)가 흡기 막 접촉기(20a) 및 탈기 막 접촉기(20b)로 구분되는 구성으로 이루어질 수 있다.Referring to FIG. 3, the exhaust gas treatment device generated in a semiconductor manufacturing process according to the third embodiment of the present invention may be configured such that, compared to the configuration according to the second embodiment, the separation membrane contactor (20) is divided into an intake membrane contactor (20a) and a degassing membrane contactor (20b).
여기서, 흡기 막 접촉기(20a)는 배가스가 열교환기(30)와 열분해기(10)를 통과하여 수소 대비 물에 대한 용해도가 높은 NH3, HF, H2S, NO2 가스로 전환되어 N2와 O2 가스와 함께 유입되면, 공정수와의 막 접촉에 의해 공정수에 NH3, HF, H2S, NO2 가스가 용해되도록 하여 흡수시키고, N2와 O2 가스는 대기로 배출시키는 기능을 수행하게 된다.Here, the intake membrane contactor (20a) passes the exhaust gas through the heat exchanger (30) and the thermal decomposer (10) to produce NH 3 , which has a high solubility in water compared to hydrogen. Converted to HF, H2S , NO2 gases and N2 and When introduced with O 2 gas, NH 3 is produced in the process water by membrane contact with the process water. Absorb HF, H2S , NO2 gases by dissolving them, and N2 and O2 gas performs the function of being released into the atmosphere.
한편, 탈기 막 접촉기(20b)는 흡기 막 접촉기(20a)에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수를 공급받아 처리수에서 NH3, HF, H2S, NO2 가스를 탈기시키는 기능을 수행하게 된다.Meanwhile, the degassing membrane contactor (20b) is used to remove NH 3 from the intake membrane contactor (20a). Treated water containing HF, H2S , and NO2 gases dissolved in it is supplied, and NH3 , It performs the function of degassing HF, H2S , and NO2 gases.
이 때, 탈기된 NH3, HF, H2S, NO2 가스는 진공펌프(40)에 의해 회수될 수 있는데, 이 때 회수되는 NH3, HF, H2S, NO2 가스는 고농축된 상태이므로 중화처리가 용이하고, 또한 이들을 각각 분리하여 회수할 수 있게 된다.At this time, the degassed NH3 , HF, H 2 S, NO 2 gases can be recovered by a vacuum pump (40), and NH 3 , which are recovered at this time, HF, H2S , and NO2 gases are highly concentrated, so they are easy to neutralize, and can be separated and recovered.
또한, 탈기 막 접촉기(20b)에서 NH3, HF, H2S, NO2 가스가 탈기된 공정수(물)은 다시 흡기 막 접촉기(20a)로 재공급이 이루어질 수 있고, 이와 같이 흡기 막 접촉기(20a)로 공급되는 공정수는 열분해기(10)를 통과하여 전환된 NH3, HF, H2S, NO2 가스를 용해시키는 용도로 재사용이 이루어질 수 있게 된다.In addition, NH 3 in the degassing membrane contactor (20b), The process water (water) from which HF, H2S , and NO2 gases have been removed can be re-supplied to the intake membrane contactor (20a), and the process water supplied to the intake membrane contactor (20a) in this way passes through the pyrolysis device (10) to be converted into NH3 , It can be reused for the purpose of dissolving HF, H2S , and NO2 gases.
따라서, 본 발명의 제3 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치에 의하면, 반도체 제조공정에서 발생되는 배가스의 처리를 위한 장치가 컴팩트화 되어 설치면적이 줄게 됨에 따라 상대적으로 좁은 환경에서도 설치가 쉬워지고, 이에 따라 설치비용이 줄어들게 되는 효과가 제공될 수 있다.Therefore, according to the device for treating exhaust gas generated in a semiconductor manufacturing process according to the third embodiment of the present invention, the device for treating exhaust gas generated in a semiconductor manufacturing process is made compact, so that the installation area is reduced, making it easy to install even in a relatively narrow environment, and thus reducing the installation cost.
또한, 본 발명의 제3 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치에 의하면, 반도체 제조공정에서 발생하는 배가스 중, 일부의 가스가 회수되어 반도체 제조공정에 재사용 됨으로써, 반도체 제조에 따른 비용도 줄어들게 되는 효과도 제공될 수 있다.In addition, according to the exhaust gas treatment device generated in the semiconductor manufacturing process according to the third embodiment of the present invention, some of the exhaust gas generated in the semiconductor manufacturing process is recovered and reused in the semiconductor manufacturing process, thereby providing the effect of reducing the cost of semiconductor manufacturing.
<제4 실시 예><Example 4>
도 4는 본 발명의 제4 실시 예에 따른 반도체 제조공정에서 발생되는 배가스 처리장치의 개념도이다.FIG. 4 is a conceptual diagram of a device for treating exhaust gas generated in a semiconductor manufacturing process according to a fourth embodiment of the present invention.
참고로, 본 발명의 제4 실시 예를 설명함에 있어서 앞선 실시 예들에서와 동일한 부분에 대해서는 동일부호를 부여하고, 반복되는 설명은 생략하기로 한다.For reference, in describing the fourth embodiment of the present invention, the same parts as in the previous embodiments are given the same reference numerals and repeated descriptions are omitted.
도 4를 참조하면, 본 발명의 제4 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치는, 앞선 제3 실시 예에 따른 구성과 비교할 때, 압축기(50), 복수의 압력조절밸브(60,62,65), 복수의 회수 탱크(70,80) 및 워터 펌프(90)를 더 포함하는 구성으로 이루어질 수 있다.Referring to FIG. 4, the exhaust gas treatment device generated in a semiconductor manufacturing process according to the fourth embodiment of the present invention may be configured to further include a compressor (50), a plurality of pressure regulating valves (60, 62, 65), a plurality of recovery tanks (70, 80), and a water pump (90), compared to the configuration according to the third embodiment.
압축기(50)는, 반도체 제조공정에서 발생하는 배가스를 승압시킨 후 열교환기로 공급되도록 하는 것이다.The compressor (50) pressurizes exhaust gas generated in a semiconductor manufacturing process and supplies it to a heat exchanger.
통상적으로 배가스의 수소 대비 물에 대한 용해도는 헨리의 법칙에 의해 압력이 높을수록 높아지기 때문에, 반도체 제조공정에서 발생하는 배가스를 압축기(50)에 의해 압축시켜서 압력을 높인 후, 열교환기(30) 및 열분해기(10)를 통과시켜 NH3, HF, H2S, NO2 가스로 전환시키게 되면, 이들 NH3, HF, H2S, NO2 가스는 흡기 막 접촉기(20a)에서 수소 대비 공정수(물)에 대한 용해도가 높아질 수 있게 된다.Normally, the solubility of hydrogen in water in exhaust gas increases as the pressure increases according to Henry's law, so the exhaust gas generated in the semiconductor manufacturing process is compressed by a compressor (50) to increase the pressure, and then passed through a heat exchanger (30) and a pyrolysis device (10) to produce NH3 . When converted to HF, H2S , NO2 gases, these NH3 , HF, H2S , NO2 gases can have higher solubility in process water (water) than hydrogen in the intake membrane contactor (20a).
이 때, 공정수는 기상보다 높은 압력으로 흡기 막 접촉기(20a)에 공급되도록 함으로써, NH3, HF, H2S, NO2 가스가 버블 형태로 흡수되지 않도록 하는 것이 바람직하다.At this time, the process water is supplied to the intake membrane contactor (20a) at a pressure higher than that of the gas phase, thereby NH3 , It is desirable to prevent HF, H2S , and NO2 gases from being absorbed in the form of bubbles.
복수의 압력조절밸브(60,62,64)는, 흡기 막 접촉기(20a)에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수를 탈기 막 접촉기(20b)로 공급하는 경로 상에 설치될 수 있으며, 모두 3개가 설치될 수 있다.Multiple pressure regulating valves (60, 62, 64) are connected to the intake membrane contactor (20a) to control NH3 , It can be installed on the path that supplies the treated water containing HF, H2S , and NO2 gases dissolved therein to the degassing membrane contactor (20b), and a total of three can be installed.
또한, 복수의 회수 탱크(70,80) 또한 흡기 막 접촉기(20a)에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수를 탈기 막 접촉기(20b)로 공급하는 경로 상에 설치될 수 있으며, 모두 2개가 설치될 수 있다.In addition, multiple recovery tanks (70, 80) are also used to collect NH 3 , by means of an intake membrane contactor (20a). It can be installed on the path that supplies the treated water containing HF, H2S , and NO2 gases dissolved therein to the degassing membrane contactor (20b), and two of them can be installed in total.
이 때, 복수의 회수 탱크(70,80)는 각 압력조절밸브(60,62,64)들 사이에 배치되도록 함으로써, 흡기 막 접촉기(20a)로부터 제1 압력조절밸브(60), 제1 회수 탱크(70), 제2 압력조절밸브(62), 제2 회수 탱크(80), 제3 압력조절밸브(64)가 순차적으로 설치될 수 있다.At this time, multiple recovery tanks (70, 80) are arranged between each of the pressure regulating valves (60, 62, 64), so that the first pressure regulating valve (60), the first recovery tank (70), the second pressure regulating valve (62), the second recovery tank (80), and the third pressure regulating valve (64) can be installed sequentially from the intake membrane contactor (20a).
흡기 막 접촉기(20a)에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수는 각 압력조절밸브(60,62,64)들에 의해 압력이 조절되면서 용해도 차이에 의해 분리가 이루어질 수 있게 된다. NH3 by the intake membrane contactor (20a), The treated water containing HF, H2S , and NO2 gases dissolved therein can be separated by the difference in solubility as the pressure is controlled by each pressure regulating valve (60, 62, 64).
즉, 흡기 막 접촉기(20a)에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수는 제1 압력조절밸브(60)에 의해 압력이 조절되면서 용해도가 가장 낮은 H2S가 분리되어 제1 회수 탱크(70)에 포집되고, 제2 압력조절밸브(62)에 의해 다시 압력이 조절되면서 두 번째로 용해도가 낮은 NH3가 분리되어 제2 회수 탱크(64)에 포집되며, 제3 압력조절밸브(64)에 의해 다시 한 번 압력이 조절되면서 HF와 NO2 가스가 용해된 처리수는 탈기 막 접촉기(20b)에서 탈기가 이루어지게 된다.That is, NH 3 by the intake membrane contactor (20a), The treated water containing HF, H2S , and NO2 gases dissolved therein is subjected to pressure control by the first pressure regulating valve (60) so that H2S , which has the lowest solubility, is separated and captured in the first recovery tank (70). The pressure is then controlled again by the second pressure regulating valve (62) so that NH3, which has the second lowest solubility, is separated and captured in the second recovery tank (64). The pressure is then controlled once again by the third pressure regulating valve (64) so that the treated water containing HF and NO2 gases dissolved therein is degassed in the degassing membrane contactor (20b).
따라서, 탈기 막 접촉기(20b)에서 탈기되어 분리된 HF와 NO2 가스는 진공펌프(40)에 의해 회수되며, 이와 같이 회수된 HF와 NO2 가스는 정제과정을 거친 후 반도체 제조공정을 위한 특수가스로 재사용이 이루어질 수 있게 된다.Accordingly, the HF and NO 2 gases separated by degassing in the degassing membrane contactor (20b) are recovered by the vacuum pump (40), and the HF and NO 2 gases recovered in this manner can be reused as special gases for the semiconductor manufacturing process after going through a purification process.
이 때, 탈기 막 접촉기(20b)에서 분리된 공정수(물)는 워터 펌프(90)에 의해 다시 흡기 막 접촉기(20a)로 재공급이 이루어질 수 있고, 이와 같이 흡기 막 접촉기(20a)로 공급되는 공정수는 열분해기(10)를 통과하여 전환된 NH3, HF, H2S, NO2 가스를 용해시키는 용도로 재사용이 이루어질 수 있게 된다.At this time, the process water (water) separated from the degassing membrane contactor (20b) can be re-supplied to the intake membrane contactor (20a) by the water pump (90), and the process water supplied to the intake membrane contactor (20a) in this way passes through the pyrolysis device (10) and is converted into NH 3 , It can be reused for the purpose of dissolving HF, H2S , and NO2 gases.
따라서, 본 발명의 제4 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치에 의하면, 반도체 제조공정에서 발생되는 배가스의 처리를 위한 장치가 컴팩트화 되어 설치면적이 줄게 됨에 따라 상대적으로 좁은 환경에서도 설치가 쉬워지고, 이에 따라 설치비용이 줄어들게 되는 효과가 제공될 수 있다.Therefore, according to the device for treating exhaust gas generated in a semiconductor manufacturing process according to the fourth embodiment of the present invention, the device for treating exhaust gas generated in a semiconductor manufacturing process is made compact, so that the installation area is reduced, making it easy to install even in a relatively narrow environment, and thus reducing the installation cost.
또한, 본 발명의 제4 실시 예에 따른 반도체 제조공정에서 발생하는 배가스 처리장치에 의하면, 반도체 제조공정에서 발생하는 배가스 중, 일부의 가스가 회수되어 반도체 제조공정에 재사용 됨으로써, 반도체 제조에 따른 비용도 줄어들게 되는 효과도 제공될 수 있다.In addition, according to the exhaust gas treatment device generated in the semiconductor manufacturing process according to the fourth embodiment of the present invention, some of the exhaust gas generated in the semiconductor manufacturing process is recovered and reused in the semiconductor manufacturing process, thereby providing the effect of reducing the cost of semiconductor manufacturing.
본 발명이 속하는 기술분야의 통상의 지식을 가진 자는 본 발명이 그 기술적 사상이나 필수적인 특징을 변경하지 않고서 다른 구체적인 형태로 실시될 수 있다는 것을 이해할 수 있을 것이다. 그러므로 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적이 아닌 것으로 이해해야만 한다. 본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구범위에 의하여 나타내어지며, 특허청구범위의 의미 및 범위 그리고 그 균등 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다.A person having ordinary skill in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical idea or essential characteristics thereof. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is indicated by the claims described below rather than the detailed description above, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention.
10 : 열분해기 20 : 분리막 접촉기
20a : 흡기 막 접촉기 20b : 탈기 막 접촉기
30 : 열교환기 40 : 진공펌프
50 : 압축기 60 : 제1 압력조절밸브
62 : 제2 압력조절밸브 64 : 제3 압력조절밸브
70 : 제1 회수 탱크 80 : 제2 회수 탱크
90 : 워터 펌프10: Pyrolysis unit 20: Membrane contactor
20a: Intake membrane contactor 20b: Degassing membrane contactor
30: Heat exchanger 40: Vacuum pump
50: Compressor 60: 1st pressure regulating valve
62: 2nd pressure regulating valve 64: 3rd pressure regulating valve
70: 1st recovery tank 80: 2nd recovery tank
90 : Water pump
Claims (5)
상기 분리막 접촉기는,
배가스가 상기 열교환기와 상기 열분해기를 통과하여 수소 대비 물에 대한 용해도가 높은 NH3, HF, H2S, NO2 가스로 전환되어 N2와 O2 가스와 함께 유입되면, 공정수와의 막 접촉에 의해 공정수에 NH3, HF, H2S, NO2 가스가 용해되도록 하여 흡수시키고, N2와 O2 가스는 대기로 배출시키는 흡기 막 접촉기와,
상기 흡기 막 접촉기에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수를 공급받아 처리수에서 NH3, HF, H2S, NO2 가스를 탈기시키는 탈기 막 접촉기로 구성되고,
상기 흡기 막 접촉기에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수를 상기 탈기 막 접촉기로 공급하는 경로 상에 설치되어 상기 NH3, HF, H2S, NO2 가스의 압력을 조절하기 제1 압력조절밸브, 제2 압력조절밸브, 제3 압력조절밸브와,
상기 흡기 막 접촉기에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수를 상기 탈기 막 접촉기로 공급하는 경로 상에 설치되되, 상기 제1 내지 제3 압력조절밸브 사이에 배치되어 압력조절에 따른 용해도 차이에 의해 분리된 선택된 가스를 회수하여 저장하는 제1 회수 탱크 및 제2 회수 탱크를 더 포함하며,
상기 흡기 막 접촉기에 의해 NH3, HF, H2S, NO2 가스가 용해된 처리수는 상기 제1 압력조절밸브에 의해 압력이 조절되면서 수소 대비 물에 대한 용해도가 가장 낮은 H2S가 분리되어 상기 제1 회수 탱크에 포집되고, 상기 제2 압력조절밸브에 의해 다시 압력이 조절되면서 두 번째로 수소 대비 물에 대한 압력이 낮은 NH3가 분리되어 상기 제2 회수 탱크에 포집되며, 상기 제3 압력조절밸브에 의해 다시 한 번 압력이 조절되면서 HF, NO2 가스가 용해된 처리수는 상기 탈기 막 접촉기에서 탈기가 이루어지되,
상기 탈기 막 접촉기에서 탈기되어 분리된 HF, NO2 가스는 진공 펌프에 의해 회수되어 정제과정을 거친 후 반도체 제조공정을 위한 특수가스로 재사용되고,
상기 탈기 막 접촉기에서 분리된 물은 워터 펌프에 의해 상기 흡기 막 접촉기로 재공급되어, 상기 열분해기를 통과하여 전환된 NH3, HF, H2S, NO2 가스를 용해시키는 용도로 재사용이 이루어지는 것을 특징으로 하는 반도체 제조공정에서 발생하는 배가스 처리장치.A thermal decomposer that thermally decomposes exhaust gas generated in a semiconductor manufacturing process and converts it into ammonia (NH 3 ), hydrogen fluoride (HF), hydrogen sulfide (H 2 S), and nitrogen dioxide (NO 2 ), which have higher solubility in water than hydrogen; NH 3 , converted by the thermal decomposer With HF, H2S , NO2 and N2 O 2 gas is converted to NH 3 by membrane contact with process water, HF, H2S , NO2 are absorbed by dissolving in process water, and N2 and A device for treating exhaust gas generated in a semiconductor manufacturing process, comprising: a membrane contactor for discharging only O2 into the atmosphere; a heat exchanger for increasing the temperature of the exhaust gas generated in a semiconductor manufacturing process by heat exchange before thermally decomposing the exhaust gas generated in the semiconductor manufacturing process by the thermal decomposer; and a compressor for increasing the pressure of the exhaust gas generated in the semiconductor manufacturing process before thermally decomposing the exhaust gas generated in the semiconductor manufacturing process by the thermal decomposer.
The above membrane contactor,
The exhaust gas passes through the heat exchanger and the thermal decomposer to form NH 3 , which has a high solubility in water compared to hydrogen. Converted to HF, H2S , NO2 gases and N2 and When introduced with O 2 gas, NH 3 is produced in the process water by membrane contact with the process water. Absorb HF, H2S , NO2 gases by dissolving them, and N2 and O2 gas is discharged to the atmosphere through an intake membrane contactor,
NH3 by the above intake membrane contactor, Treated water containing HF, H2S , and NO2 gases dissolved in it is supplied, and NH3 , It consists of a degassing membrane contactor for degassing HF, H2S , NO2 gases,
NH3 by the above intake membrane contactor, It is installed on the path that supplies the treated water containing dissolved HF, H2S , NO2 gases to the degassing membrane contactor, and the NH3 , A first pressure regulating valve, a second pressure regulating valve, and a third pressure regulating valve for regulating the pressure of HF, H2S , and NO2 gases,
NH3 by the above intake membrane contactor, A first recovery tank and a second recovery tank are installed on a path for supplying treated water in which HF, H2S , and NO2 gases are dissolved to the degassing membrane contactor, and are arranged between the first to third pressure regulating valves to recover and store selected gases separated by the difference in solubility according to pressure regulation.
NH3 by the above intake membrane contactor, The treated water containing HF, H2S , and NO2 gases dissolved therein is subjected to pressure control by the first pressure regulating valve, and H2S , which has the lowest solubility in water compared to hydrogen, is separated and captured in the first recovery tank. The treated water is subjected to pressure control again by the second pressure regulating valve, and NH3 , which has the second lowest solubility in water compared to hydrogen, is separated and captured in the second recovery tank. The treated water containing HF, NO2 gases dissolved therein is subjected to degassing in the degassing membrane contactor, and the pressure is regulated once more by the third pressure regulating valve.
The HF and NO2 gases separated by degassing in the above-mentioned degassing membrane contactor are recovered by a vacuum pump and, after going through a purification process, are reused as special gases for the semiconductor manufacturing process.
The water separated from the above degassing membrane contactor is re-supplied to the above intake membrane contactor by the water pump and passes through the above thermal decomposition device to convert NH3 , A device for treating exhaust gas generated in a semiconductor manufacturing process, characterized in that it is reused for the purpose of dissolving HF, H2S , and NO2 gases.
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