NL157149B - Halfgeleiderthyristorinrichting. - Google Patents
Halfgeleiderthyristorinrichting.Info
- Publication number
- NL157149B NL157149B NL6606620.A NL6606620A NL157149B NL 157149 B NL157149 B NL 157149B NL 6606620 A NL6606620 A NL 6606620A NL 157149 B NL157149 B NL 157149B
- Authority
- NL
- Netherlands
- Prior art keywords
- thyristor device
- semiconductor thyristor
- semiconductor
- thyristor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US455737A US3360696A (en) | 1965-05-14 | 1965-05-14 | Five-layer symmetrical semiconductor switch |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6606620A NL6606620A (nl) | 1966-11-15 |
NL157149B true NL157149B (nl) | 1978-06-15 |
Family
ID=23810087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6606620.A NL157149B (nl) | 1965-05-14 | 1966-05-13 | Halfgeleiderthyristorinrichting. |
Country Status (7)
Country | Link |
---|---|
US (1) | US3360696A (nl) |
DE (1) | DE1564527B1 (nl) |
ES (1) | ES326632A1 (nl) |
FR (1) | FR1483998A (nl) |
GB (1) | GB1141103A (nl) |
NL (1) | NL157149B (nl) |
SE (1) | SE314442B (nl) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6849918B1 (en) | 1965-09-28 | 2005-02-01 | Chou H. Li | Miniaturized dielectrically isolated solid state device |
US5696402A (en) * | 1965-09-28 | 1997-12-09 | Li; Chou H. | Integrated circuit device |
US7038290B1 (en) | 1965-09-28 | 2006-05-02 | Li Chou H | Integrated circuit device |
US3448354A (en) * | 1967-01-20 | 1969-06-03 | Rca Corp | Semiconductor device having increased resistance to second breakdown |
US3504242A (en) * | 1967-08-11 | 1970-03-31 | Westinghouse Electric Corp | Switching power transistor with thyristor overload capacity |
GB1301193A (en) * | 1970-02-27 | 1972-12-29 | Mullard Ltd | Improvements in semiconductor devices |
US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
FR2128236B1 (nl) * | 1971-03-12 | 1976-06-11 | Gen Electric | |
US3879744A (en) * | 1971-07-06 | 1975-04-22 | Silec Semi Conducteurs | Bidirectional thyristor |
US3967308A (en) * | 1971-10-01 | 1976-06-29 | Hitachi, Ltd. | Semiconductor controlled rectifier |
US3914783A (en) * | 1971-10-01 | 1975-10-21 | Hitachi Ltd | Multi-layer semiconductor device |
JPS4918279A (nl) * | 1972-06-08 | 1974-02-18 | ||
US3934331A (en) * | 1972-03-21 | 1976-01-27 | Hitachi, Ltd. | Method of manufacturing semiconductor devices |
US3787719A (en) * | 1972-11-10 | 1974-01-22 | Westinghouse Brake & Signal | Triac |
JPS541437B2 (nl) * | 1973-04-18 | 1979-01-24 | ||
DE2351783C3 (de) * | 1973-10-16 | 1982-02-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Zweiweg-Halbleiterschalter (Triac) |
US3896477A (en) * | 1973-11-07 | 1975-07-22 | Jearld L Hutson | Multilayer semiconductor switching devices |
US3918082A (en) * | 1973-11-07 | 1975-11-04 | Jearld L Hutson | Semiconductor switching device |
DE2407696C3 (de) * | 1974-02-18 | 1979-02-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
US4190853A (en) * | 1974-07-15 | 1980-02-26 | Hutson Jearld L | Multilayer semiconductor switching devices |
US4187515A (en) * | 1974-08-15 | 1980-02-05 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor controlled rectifier |
US3972014A (en) * | 1974-11-11 | 1976-07-27 | Hutson Jearld L | Four quadrant symmetrical semiconductor switch |
US4063278A (en) * | 1975-01-06 | 1977-12-13 | Hutson Jearld L | Semiconductor switch having sensitive gate characteristics at high temperatures |
JPS52146570A (en) * | 1976-05-31 | 1977-12-06 | Toshiba Corp | Reverse conducting thyristor |
CH594989A5 (nl) * | 1976-09-03 | 1978-01-31 | Bbc Brown Boveri & Cie | |
US4286279A (en) * | 1976-09-20 | 1981-08-25 | Hutson Jearld L | Multilayer semiconductor switching devices |
US4292646A (en) * | 1977-01-07 | 1981-09-29 | Rca Corporation | Semiconductor thyristor device having integral ballast means |
CH622127A5 (nl) * | 1977-12-21 | 1981-03-13 | Bbc Brown Boveri & Cie | |
EP0017860A3 (en) * | 1979-04-11 | 1982-07-21 | Teccor Electronics, Inc. | Semiconductor switching device and method of making same |
DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
DE3019883A1 (de) * | 1980-05-23 | 1981-12-03 | Siemens AG, 1000 Berlin und 8000 München | Zweirichtungsthyristor |
DE3039939A1 (de) * | 1980-10-23 | 1982-06-16 | Brown, Boveri & Cie Ag, 6800 Mannheim | Anordnung zum aufschweissen eines kontaktstueckes auf einen kontakttraeger |
CA1238115A (en) * | 1986-10-29 | 1988-06-14 | Jerzy Borkowicz | Bi-directional overvoltage protection device |
US20040144999A1 (en) * | 1995-06-07 | 2004-07-29 | Li Chou H. | Integrated circuit device |
US20060261346A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same |
US7615801B2 (en) * | 2005-05-18 | 2009-11-10 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
US9741839B1 (en) * | 2016-06-21 | 2017-08-22 | Powerex, Inc. | Gate structure of thyristor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL265766A (nl) * | 1960-06-10 | |||
US3196330A (en) * | 1960-06-10 | 1965-07-20 | Gen Electric | Semiconductor devices and methods of making same |
US3124703A (en) * | 1960-06-13 | 1964-03-10 | Figure | |
DE1166940B (de) * | 1961-03-21 | 1964-04-02 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnden Leitfaehigkeitstyps und Verfahren zum Herstellen |
US3123750A (en) * | 1961-10-31 | 1964-03-03 | Multiple junction semiconductor device | |
US3284639A (en) * | 1963-02-19 | 1966-11-08 | Westinghouse Electric Corp | Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity |
US3275909A (en) * | 1963-12-19 | 1966-09-27 | Gen Electric | Semiconductor switch |
-
0
- FR FR1483998D patent/FR1483998A/fr not_active Expired
-
1965
- 1965-05-14 US US455737A patent/US3360696A/en not_active Expired - Lifetime
-
1966
- 1966-04-29 GB GB19077/66A patent/GB1141103A/en not_active Expired
- 1966-05-12 ES ES0326632A patent/ES326632A1/es not_active Expired
- 1966-05-13 NL NL6606620.A patent/NL157149B/nl not_active IP Right Cessation
- 1966-05-13 DE DE19661564527 patent/DE1564527B1/de active Pending
- 1966-05-13 SE SE6627/66A patent/SE314442B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL6606620A (nl) | 1966-11-15 |
DE1564527B1 (de) | 1972-05-25 |
ES326632A1 (es) | 1967-03-01 |
US3360696A (en) | 1967-12-26 |
FR1483998A (nl) | 1967-09-13 |
SE314442B (nl) | 1969-09-08 |
GB1141103A (en) | 1969-01-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NL80 | Information provided on patent owner name for an already discontinued patent |
Owner name: R C A |
|
V4 | Discontinued because of reaching the maximum lifetime of a patent |