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AT263084B - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
AT263084B
AT263084B AT576966A AT576966A AT263084B AT 263084 B AT263084 B AT 263084B AT 576966 A AT576966 A AT 576966A AT 576966 A AT576966 A AT 576966A AT 263084 B AT263084 B AT 263084B
Authority
AT
Austria
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
AT576966A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT263084B publication Critical patent/AT263084B/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/601Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/221Channel regions of field-effect devices of FETs
    • H10D62/235Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/221Channel regions of field-effect devices of FETs
    • H10D62/235Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/05Etch and refill
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT576966A 1965-06-18 1966-06-16 Halbleitervorrichtung AT263084B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB25874/65A GB1153428A (en) 1965-06-18 1965-06-18 Improvements in Semiconductor Devices.

Publications (1)

Publication Number Publication Date
AT263084B true AT263084B (de) 1968-07-10

Family

ID=10234780

Family Applications (1)

Application Number Title Priority Date Filing Date
AT576966A AT263084B (de) 1965-06-18 1966-06-16 Halbleitervorrichtung

Country Status (10)

Country Link
US (1) US3745425A (de)
AT (1) AT263084B (de)
BE (1) BE682752A (de)
CH (1) CH466434A (de)
DE (2) DE1789206C3 (de)
DK (1) DK119016B (de)
ES (1) ES327989A1 (de)
GB (1) GB1153428A (de)
NL (1) NL156268B (de)
SE (1) SE344656B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2000093A1 (de) * 1970-01-02 1971-07-08 Heinz Dr Rer Nat Prof Beneking Feldeffekttransistor

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
JPS4936514B1 (de) * 1970-05-13 1974-10-01
JPS5123432B2 (de) * 1971-08-26 1976-07-16
US3927418A (en) * 1971-12-11 1975-12-16 Sony Corp Charge transfer device
JPS5024084A (de) * 1973-07-05 1975-03-14
DE2812049C2 (de) * 1974-09-20 1982-05-27 Siemens AG, 1000 Berlin und 8000 München n-Kanal-Speicher-FET
US4011105A (en) * 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits
GB1569897A (en) * 1975-12-31 1980-06-25 Ibm Field effect transistor
JPS52131483A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Mis-type semiconductor device
NL7606483A (nl) * 1976-06-16 1977-12-20 Philips Nv Inrichting voor het mengen van signalen.
US4350991A (en) * 1978-01-06 1982-09-21 International Business Machines Corp. Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance
JPS54125986A (en) * 1978-03-23 1979-09-29 Handotai Kenkyu Shinkokai Semiconductor including insulated gate type transistor
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
JPS55156370A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device
US5348898A (en) * 1979-05-25 1994-09-20 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
JPS56155572A (en) * 1980-04-30 1981-12-01 Sanyo Electric Co Ltd Insulated gate field effect type semiconductor device
DE3208500A1 (de) * 1982-03-09 1983-09-15 Siemens AG, 1000 Berlin und 8000 München Spannungsfester mos-transistor fuer hoechstintegrierte schaltungen
DE3369030D1 (en) * 1983-04-18 1987-02-12 Itt Ind Gmbh Deutsche Method of making a monolithic integrated circuit comprising at least one insulated gate field-effect transistor
JPS60123055A (ja) * 1983-12-07 1985-07-01 Fujitsu Ltd 半導体装置及びその製造方法
EP0436038A4 (en) * 1989-07-14 1991-09-04 Seiko Instruments & Electronics Ltd. Semiconductor device and method of producing the same
KR960002100B1 (ko) * 1993-03-27 1996-02-10 삼성전자주식회사 전하결합소자형 이미지센서
DE4415568C2 (de) * 1994-05-03 1996-03-07 Siemens Ag Herstellungsverfahren für MOSFETs mit LDD
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL202404A (de) * 1955-02-18
US2869055A (en) 1957-09-20 1959-01-13 Beckman Instruments Inc Field effect transistor
NL267831A (de) 1960-08-17
NL297601A (de) 1962-09-07 Rca Corp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2000093A1 (de) * 1970-01-02 1971-07-08 Heinz Dr Rer Nat Prof Beneking Feldeffekttransistor

Also Published As

Publication number Publication date
SE344656B (de) 1972-04-24
DE1564411A1 (de) 1969-07-24
GB1153428A (en) 1969-05-29
ES327989A1 (es) 1967-04-01
NL156268B (nl) 1978-03-15
US3745425A (en) 1973-07-10
CH466434A (de) 1968-12-15
DE1564411C3 (de) 1981-02-05
DE1564411B2 (de) 1973-10-31
NL6608260A (de) 1966-12-19
BE682752A (de) 1966-12-19
DE1789206C3 (de) 1984-02-02
DK119016B (da) 1970-11-02

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