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CH437539A - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
CH437539A
CH437539A CH421266A CH421266A CH437539A CH 437539 A CH437539 A CH 437539A CH 421266 A CH421266 A CH 421266A CH 421266 A CH421266 A CH 421266A CH 437539 A CH437539 A CH 437539A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH421266A
Other languages
English (en)
Inventor
Edqvist Olle
Svedberg Per
Vedin Bengt-Arne
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Publication of CH437539A publication Critical patent/CH437539A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
CH421266A 1965-03-25 1966-03-22 Halbleiteranordnung CH437539A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE384965 1965-03-25

Publications (1)

Publication Number Publication Date
CH437539A true CH437539A (de) 1967-06-15

Family

ID=20262993

Family Applications (1)

Application Number Title Priority Date Filing Date
CH421266A CH437539A (de) 1965-03-25 1966-03-22 Halbleiteranordnung

Country Status (5)

Country Link
US (1) US3437886A (de)
CH (1) CH437539A (de)
DE (1) DE1539636B1 (de)
GB (1) GB1134019A (de)
NL (1) NL6603372A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764326A1 (de) * 1968-05-17 1971-07-01 Bbc Brown Boveri & Cie Verfahren zur Anbringung einer Hohlkehle an einem Halbleiterbauelement
US3628106A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with protective peripheral junction portion
US3742593A (en) * 1970-12-11 1973-07-03 Gen Electric Semiconductor device with positively beveled junctions and process for its manufacture
US3943547A (en) * 1970-12-26 1976-03-09 Hitachi, Ltd. Semiconductor device
US3731159A (en) * 1971-05-19 1973-05-01 Anheuser Busch Microwave diode with low capacitance package
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
DE2340107A1 (de) * 1973-07-06 1975-01-23 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement
DE2340128C3 (de) * 1973-08-08 1982-08-12 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement hoher Sperrfähigkeit
JPS5624972A (en) * 1979-08-07 1981-03-10 Mitsubishi Electric Corp Thyristor
DE3137695A1 (de) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung
DE102019105727B4 (de) * 2019-03-07 2020-10-15 Semikron Elektronik Gmbh & Co. Kg Thyristor oder Diode
EP4006990B1 (de) 2020-11-27 2023-04-05 Hitachi Energy Switzerland AG Halbleiterbauelement mit einer seitenfläche mit unterschiedlichen teilbereichen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US3055776A (en) * 1960-12-12 1962-09-25 Pacific Semiconductors Inc Masking technique
BE628619A (de) * 1962-02-20
GB1052661A (de) * 1963-01-30 1900-01-01
GB1003654A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Semiconductor devices
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor

Also Published As

Publication number Publication date
GB1134019A (en) 1968-11-20
US3437886A (en) 1969-04-08
NL6603372A (de) 1966-09-26
DE1539636B1 (de) 1971-01-14

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