FR1519530A - Dispositif semi-conducteur - Google Patents
Dispositif semi-conducteurInfo
- Publication number
- FR1519530A FR1519530A FR53642A FR53642A FR1519530A FR 1519530 A FR1519530 A FR 1519530A FR 53642 A FR53642 A FR 53642A FR 53642 A FR53642 A FR 53642A FR 1519530 A FR1519530 A FR 1519530A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H10D62/135—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR53642A FR1519530A (fr) | 1965-03-17 | 1966-03-16 | Dispositif semi-conducteur |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44039765A | 1965-03-17 | 1965-03-17 | |
FR53642A FR1519530A (fr) | 1965-03-17 | 1966-03-16 | Dispositif semi-conducteur |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1519530A true FR1519530A (fr) | 1968-04-05 |
Family
ID=26169245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR53642A Expired FR1519530A (fr) | 1965-03-17 | 1966-03-16 | Dispositif semi-conducteur |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1519530A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2417854A1 (fr) * | 1978-02-21 | 1979-09-14 | Radiotechnique Compelec | Transistor comportant une zone resistive integree dans sa region d'emetteur |
FR2438341A1 (fr) * | 1978-07-20 | 1980-04-30 | Gen Electric | Transistor de commutation perfectionne |
EP0064614A2 (fr) * | 1981-04-30 | 1982-11-17 | Kabushiki Kaisha Toshiba | Structure d'émetteur pour dispositifs semiconducteurs |
-
1966
- 1966-03-16 FR FR53642A patent/FR1519530A/fr not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2417854A1 (fr) * | 1978-02-21 | 1979-09-14 | Radiotechnique Compelec | Transistor comportant une zone resistive integree dans sa region d'emetteur |
FR2438341A1 (fr) * | 1978-07-20 | 1980-04-30 | Gen Electric | Transistor de commutation perfectionne |
EP0064614A2 (fr) * | 1981-04-30 | 1982-11-17 | Kabushiki Kaisha Toshiba | Structure d'émetteur pour dispositifs semiconducteurs |
EP0064614A3 (en) * | 1981-04-30 | 1984-11-07 | Kabushiki Kaisha Toshiba | Improved emitter structure for semiconductor devices |
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