FR1505959A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number: FR1505959A
Authority: FR; France
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1965-12-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

FR88473A

Other languages

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1965-12-22

Filing date

1966-12-22

Publication date

1967-12-15

1966-12-22 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1967-12-15 Application granted granted Critical

1967-12-15 Publication of FR1505959A publication Critical patent/FR1505959A/fr

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass

FR88473A 1965-12-22 1966-12-22 Dispositif semi-conducteur Expired FR1505959A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB54333/65A GB1136569A (en)	1965-12-22	1965-12-22	Insulated gate field effect transistors

Publications (1)

Publication Number	Publication Date
FR1505959A true FR1505959A (fr)	1967-12-15

Family

ID=10470665

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR88473A Expired FR1505959A (fr)	1965-12-22	1966-12-22	Dispositif semi-conducteur

Country Status (8)

Country	Link
US (1)	US3436623A (fr)
JP (1)	JPS4931592B1 (fr)
CH (1)	CH470085A (fr)
DE (1)	DE1564475C2 (fr)
FR (1)	FR1505959A (fr)
GB (2)	GB1139170A (fr)
NL (1)	NL155130B (fr)
SE (1)	SE348320B (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2396416A1 (fr) *	1977-06-30	1979-01-26	Siemens Ag	Transistor a effet de champ a canal de courte longueur
FR2396415A1 (fr) *	1977-06-30	1979-01-26	Siemens Ag	Transistor a effet de champ a canal de longueur extremement courte
FR2396414A1 (fr) *	1977-06-30	1979-01-26	Siemens Ag	Transistor a effet de champ a canal de longueur extremement courte
EP0444712A1 (fr) *	1990-03-02	1991-09-04	Nippon Telegraph And Telephone Corporation	Transistor en couche mince multigrille
US5446304A (en) *	1991-09-30	1995-08-29	Sony Corporation	Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3573571A (en) *	1967-10-13	1971-04-06	Gen Electric	Surface-diffused transistor with isolated field plate
US3686544A (en) *	1969-02-10	1972-08-22	Philips Corp	Mosfet with dual dielectric of titanium dioxide on silicon dioxide to prevent surface current migration path
US3577210A (en) *	1969-02-17	1971-05-04	Hughes Aircraft Co	Solid-state storage device
JPS5145438B1 (fr) *	1971-06-25	1976-12-03
JPS5633867B2 (fr) *	1971-12-08	1981-08-06
JPS5535865B2 (fr) *	1972-12-07	1980-09-17
JPS5154789A (fr) *	1974-11-09	1976-05-14	Nippon Electric Co
US4041519A (en) *	1975-02-10	1977-08-09	Melen Roger D	Low transient effect switching device and method
US4057820A (en) *	1976-06-29	1977-11-08	Westinghouse Electric Corporation	Dual gate MNOS transistor
US4245165A (en) *	1978-11-29	1981-01-13	International Business Machines Corporation	Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control
US5187552A (en) *	1979-03-28	1993-02-16	Hendrickson Thomas E	Shielded field-effect transistor devices
US5202574A (en) *	1980-05-02	1993-04-13	Texas Instruments Incorporated	Semiconductor having improved interlevel conductor insulation
FR2499769A1 (fr) *	1981-02-06	1982-08-13	Efcis	Transistor a effet de champ a grille isolee ayant une capacite parasite reduite et procede de fabrication
US4499482A (en) *	1981-12-22	1985-02-12	Levine Michael A	Weak-source for cryogenic semiconductor device
GB2118774B (en) *	1982-02-25	1985-11-27	Sharp Kk	Insulated gate thin film transistor
JPS61120466A (ja) *	1984-11-16	1986-06-07	Fujitsu Ltd	半導体光検出素子
EP0217406B1 (fr) *	1985-10-04	1992-06-10	Hosiden Corporation	Transistor à couche mince et méthode pour sa fabrication
US5012315A (en) *	1989-01-09	1991-04-30	Regents Of University Of Minnesota	Split-gate field effect transistor
US5079620A (en) *	1989-01-09	1992-01-07	Regents Of The University Of Minnesota	Split-gate field effect transistor
JPH03280071A (ja) *	1990-03-29	1991-12-11	Konica Corp	印刷版の形成方法
JP3548237B2 (ja) *	1994-08-29	2004-07-28	シャープ株式会社	薄膜トランジスタ
US7064034B2 (en) *	2002-07-02	2006-06-20	Sandisk Corporation	Technique for fabricating logic elements using multiple gate layers
FI20235826A1 (fi) *	2023-07-14	2025-01-15	Semiqon Tech Oy	Kryogeeninen puolijohderakenne ja menetelmä sen käyttämiseksi

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL301884A (fr) *	1962-12-17
US3339128A (en) *	1964-07-31	1967-08-29	Rca Corp	Insulated offset gate field effect transistor
US3355598A (en) *	1964-11-25	1967-11-28	Rca Corp	Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates

1965
- 1965-12-22 GB GB40362/68A patent/GB1139170A/en not_active Expired
- 1965-12-22 GB GB54333/65A patent/GB1136569A/en not_active Expired
1966
- 1966-12-19 SE SE17363/66A patent/SE348320B/xx unknown
- 1966-12-19 CH CH1815566A patent/CH470085A/de unknown
- 1966-12-20 DE DE1564475A patent/DE1564475C2/de not_active Expired
- 1966-12-20 JP JP41083031A patent/JPS4931592B1/ja active Pending
- 1966-12-21 NL NL666617926A patent/NL155130B/xx not_active IP Right Cessation
- 1966-12-22 FR FR88473A patent/FR1505959A/fr not_active Expired
- 1966-12-22 US US603906A patent/US3436623A/en not_active Expired - Lifetime

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2396416A1 (fr) *	1977-06-30	1979-01-26	Siemens Ag	Transistor a effet de champ a canal de courte longueur
FR2396415A1 (fr) *	1977-06-30	1979-01-26	Siemens Ag	Transistor a effet de champ a canal de longueur extremement courte
FR2396414A1 (fr) *	1977-06-30	1979-01-26	Siemens Ag	Transistor a effet de champ a canal de longueur extremement courte
EP0444712A1 (fr) *	1990-03-02	1991-09-04	Nippon Telegraph And Telephone Corporation	Transistor en couche mince multigrille
US5124769A (en) *	1990-03-02	1992-06-23	Nippon Telegraph And Telephone Corporation	Thin film transistor
US5446304A (en) *	1991-09-30	1995-08-29	Sony Corporation	Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate

Also Published As

Publication number	Publication date
US3436623A (en)	1969-04-01
NL155130B (nl)	1977-11-15
NL6617926A (fr)	1967-06-23
SE348320B (fr)	1972-08-28
CH470085A (de)	1969-03-15
GB1136569A (en)	1968-12-11
JPS4931592B1 (fr)	1974-08-22
DE1564475C2 (de)	1984-01-26
DE1564475A1 (de)	1969-12-11
GB1139170A (en)	1969-01-08

Publication	Publication Date	Title
FR1479917A (fr)	1967-05-05	Dispositif semi-conducteur
FR1516424A (fr)	1968-03-08	Dispositif semi-conducteur
FR1505959A (fr)	1967-12-15	Dispositif semi-conducteur
FR1475436A (fr)	1967-03-31	Dispositif semi-conducteur
AT263084B (de)	1968-07-10	Halbleitervorrichtung
FR1505701A (fr)	1967-12-15	Dispositif semi-conducteur
FR1473738A (fr)	1967-03-17	Dispositif à semi-conducteurs
AT264589B (de)	1968-09-10	Halbleiteranordnung
AT269217B (de)	1969-03-10	Halbleitervorrichtung
CH437539A (de)	1967-06-15	Halbleiteranordnung
FR1517751A (fr)	1968-03-22	Dispositif semi-conducteur
FR1489272A (fr)	1967-07-21	Dispositif semi-conducteur
FR1486215A (fr)	1967-06-23	Dispositif à semi-conducteur
AT273227B (de)	1969-08-11	Halbleitervorrichtung
AT254987B (de)	1967-06-12	Halbleiteranordnung
CH443492A (de)	1967-09-15	Halbleiteranordnung
FR1519530A (fr)	1968-04-05	Dispositif semi-conducteur
FR1518374A (fr)	1968-03-22	Dispositif semi-conducteur
FR1546644A (fr)	1968-11-22	Dispositif semi-conducteur
FR1470898A (fr)	1967-02-24	Dispositif semi-conducteur
FR1471729A (fr)	1967-03-03	Dispositif semi-conducteur
FR1493348A (fr)	1967-08-25	Dispositif semi-conducteur métla-oxyde
FR1475243A (fr)	1967-03-31	Dispositif semiconducteur
FR1504181A (fr)	1967-12-01	Dispositif semi-conducteur
FR1471292A (fr)	1967-03-03	Dispositif semi-conducteur perfectionné