NL265766A - - Google Patents
Info
- Publication number
- NL265766A NL265766A NL265766DA NL265766A NL 265766 A NL265766 A NL 265766A NL 265766D A NL265766D A NL 265766DA NL 265766 A NL265766 A NL 265766A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/645—Combinations of only lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35151A US2993154A (en) | 1960-06-10 | 1960-06-10 | Semiconductor switch |
Publications (1)
Publication Number | Publication Date |
---|---|
NL265766A true NL265766A (nl) |
Family
ID=21880971
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL265766D NL265766A (nl) | 1960-06-10 | ||
NL129185D NL129185C (nl) | 1960-06-10 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL129185D NL129185C (nl) | 1960-06-10 |
Country Status (6)
Country | Link |
---|---|
US (1) | US2993154A (nl) |
BE (1) | BE604729A (nl) |
DE (1) | DE1439922B2 (nl) |
GB (1) | GB909870A (nl) |
NL (2) | NL129185C (nl) |
SE (1) | SE301010B (nl) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3176147A (en) * | 1959-11-17 | 1965-03-30 | Ibm | Parallel connected two-terminal semiconductor devices of different negative resistance characteristics |
NL263771A (nl) * | 1960-04-26 | |||
US3196330A (en) * | 1960-06-10 | 1965-07-20 | Gen Electric | Semiconductor devices and methods of making same |
US3197652A (en) * | 1960-06-17 | 1965-07-27 | Transitron Electronic Corp | Controllable semiconductor devices |
US3196285A (en) * | 1961-05-18 | 1965-07-20 | Cievite Corp | Photoresponsive semiconductor device |
US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
BE623187A (nl) * | 1961-10-06 | |||
US3194699A (en) * | 1961-11-13 | 1965-07-13 | Transitron Electronic Corp | Method of making semiconductive devices |
US3230429A (en) * | 1962-01-09 | 1966-01-18 | Westinghouse Electric Corp | Integrated transistor, diode and resistance semiconductor network |
US3248616A (en) * | 1962-03-08 | 1966-04-26 | Westinghouse Electric Corp | Monolithic bistable flip-flop |
US3244949A (en) * | 1962-03-16 | 1966-04-05 | Fairchild Camera Instr Co | Voltage regulator |
NL290680A (nl) * | 1962-06-19 | |||
US3239728A (en) * | 1962-07-17 | 1966-03-08 | Gen Electric | Semiconductor switch |
BE634737A (nl) * | 1962-07-27 | 1900-01-01 | ||
US3284677A (en) * | 1962-08-23 | 1966-11-08 | Amelco Inc | Transistor with elongated base and collector current paths |
GB1052447A (nl) * | 1962-09-15 | |||
NL297820A (nl) * | 1962-10-05 | |||
US3243602A (en) * | 1962-12-13 | 1966-03-29 | Gen Electric | Silicon controlled gate turn off switch circuit with load connected to interior junction |
US3476618A (en) * | 1963-01-18 | 1969-11-04 | Motorola Inc | Semiconductor device |
NL302113A (nl) * | 1963-02-26 | |||
GB1051720A (nl) * | 1963-03-07 | 1900-01-01 | ||
US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
US3242551A (en) * | 1963-06-04 | 1966-03-29 | Gen Electric | Semiconductor switch |
NL296392A (nl) * | 1963-08-07 | |||
US3265909A (en) * | 1963-09-03 | 1966-08-09 | Gen Electric | Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor |
DE1464960A1 (de) * | 1963-09-03 | 1969-08-28 | Gen Electric | Halbleiter-Schalter |
US3324359A (en) * | 1963-09-30 | 1967-06-06 | Gen Electric | Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction |
US3331000A (en) * | 1963-10-18 | 1967-07-11 | Gen Electric | Gate turn off semiconductor switch having a composite gate region with different impurity concentrations |
US3328651A (en) * | 1963-10-29 | 1967-06-27 | Sylvania Electric Prod | Semiconductor switching device and method of manufacture |
US3337783A (en) * | 1964-01-16 | 1967-08-22 | Westinghouse Electric Corp | Shorted emitter controlled rectifier with improved turn-off gain |
US3343048A (en) * | 1964-02-20 | 1967-09-19 | Westinghouse Electric Corp | Four layer semiconductor switching devices having a shorted emitter and method of making the same |
US3284681A (en) * | 1964-07-01 | 1966-11-08 | Gen Electric | Pnpn semiconductor switching devices with stabilized firing characteristics |
GB1112301A (en) * | 1964-07-27 | 1968-05-01 | Gen Electric | Controlled rectifier with improved turn-on and turn-off characteristics |
FR1483998A (nl) * | 1965-05-14 | 1967-09-13 | ||
US3489962A (en) * | 1966-12-19 | 1970-01-13 | Gen Electric | Semiconductor switching device with emitter gate |
US3504241A (en) * | 1967-03-06 | 1970-03-31 | Anatoly Nikolaevich Dumanevich | Semiconductor bidirectional switch |
US3504242A (en) * | 1967-08-11 | 1970-03-31 | Westinghouse Electric Corp | Switching power transistor with thyristor overload capacity |
US3453508A (en) * | 1967-10-18 | 1969-07-01 | Int Rectifier Corp | Pinch-off shunt for controlled rectifiers |
US3486088A (en) * | 1968-05-22 | 1969-12-23 | Nat Electronics Inc | Regenerative gate thyristor construction |
US3644800A (en) * | 1969-08-04 | 1972-02-22 | Tokyo Shibaura Electric Co | Semiconductor-controlled rectifying device |
DE2211116A1 (de) * | 1972-03-08 | 1973-09-13 | Semikron Gleichrichterbau | Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps |
JPS5758075B2 (nl) * | 1974-10-19 | 1982-12-08 | Sony Corp | |
JPS5341187A (en) * | 1976-09-28 | 1978-04-14 | Toshiba Corp | Thyristor |
CH622127A5 (nl) * | 1977-12-21 | 1981-03-13 | Bbc Brown Boveri & Cie | |
JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
DE3112941A1 (de) * | 1981-03-31 | 1982-10-07 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb |
JPS59213167A (ja) * | 1983-05-19 | 1984-12-03 | Nec Corp | サイリスタ |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2838617A (en) * | 1953-01-13 | 1958-06-10 | Philips Corp | Circuit-arrangement comprising a four-zone transistor |
NL99632C (nl) * | 1955-11-22 |
-
0
- NL NL265766D patent/NL265766A/xx unknown
- NL NL129185D patent/NL129185C/xx active
-
1960
- 1960-06-10 US US35151A patent/US2993154A/en not_active Expired - Lifetime
-
1961
- 1961-05-30 GB GB19470/61A patent/GB909870A/en not_active Expired
- 1961-05-31 SE SE5718/61A patent/SE301010B/xx unknown
- 1961-06-07 BE BE604729A patent/BE604729A/fr unknown
- 1961-06-09 DE DE19611439922 patent/DE1439922B2/de active Pending
Also Published As
Publication number | Publication date |
---|---|
SE301010B (nl) | 1968-05-20 |
BE604729A (fr) | 1961-10-02 |
US2993154A (en) | 1961-07-18 |
NL129185C (nl) | |
GB909870A (en) | 1962-11-07 |
DE1439922A1 (de) | 1968-11-28 |
DE1439922B2 (de) | 1972-02-24 |