KR970070156A - 실리콘 다이 부착용 접착제, 반도체 장치의 제조방법 및 반도체 장치 - Google Patents
실리콘 다이 부착용 접착제, 반도체 장치의 제조방법 및 반도체 장치 Download PDFInfo
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Abstract
Description
Claims (4)
- 분자동 평균 2개 이상의 화학식 (1)의 실리콘 결합된 아크릴 작용성 그룹을 갖는, 아크릴 작용성 그룹 함유 오가노폴리실록산(a) 5내지 95중량%와 분자당 평균 2개 이상의 실리콘 결합되 알케닐 그룹을 갖는, 알케닐 함유 오가노폴리실록산(b) 95 내지 5중량%를 포함하는 오가노폴리실록산 혼합물(A) 100중량부, 분자당 평균 2개 이상의 실리콘 결합된 수소를 갖고 성분(b) 중의 실리콘 결합된 알케닐 1몰당 당해 성분으로부터의 실리콘 결합된 수소가 0.5 내지 20몰 제공되는 양의 실리콘 결합된 수소원자 함유 오가노폴리실록산(B), 감광제(C) 0.01 내지 10중량부 및 경화성 조성물 백만부당 백금 금속을 0.01 내지 1,000중량부 제공하며 경화성 실록산 조성물을 경화시키는 백금 촉매(D)를 포함하는, 실리콘 다이 부착용 접착제로서 사용하기 위한 실록산 조성물[당해 실록산 조성물은 고에너지 복사로의 노출에 의해 유도되는 아크릴 작용성 오가노폴리실록산의 유리 라디칼 반응 및 알케닐 작용성 오가노폴리실록산과 실리콘 결합된 수소 작용성 오가노폴리실록산과의 하이드로실릴화 반응 둘 다를 통해 경화된다].상기 화학식 (1)에서, R1및 R2는 수소원자 또는 1가 탄화수소 그룹이고, R3은 C1-C102가 탄화수소 그룹이다.
- 분자량 평균 2개 이상의 실리콘 결합된 알케닐 그룹을 갖는 알케닐 함유 오가노폴리실록산(A') 100중량부, 분자당 평균 2개 이상의 실리콘 결합된 수소원자를 갖고 성분(A') 중의 실리콘 결합된 알케닐 1몰당 당해성분으로부터 실리콘 결합된 수소가 0.5 내지 20몰 제공되는 양의 실리콘 결합된 수소원자 함유 오가노폴리실록산(B'), 감광제(C) 0.01 내지 10중량부 및 경화성 조성물 백만부당 백금 금속을 0.01 내지 1,000중량부 제공하며 경화성 실록산 조성물을 경화시키는 백금 촉매(D)를 포함하는 실리콘 다이 부착용 접착제로서 사용하기 위한 실록산 조성물[당해 실록산 조성물은 고에너지 복사로의 노출에 의해 유도되는 아크릴 작용성 오가노폴리실록산의 유리 라디칼 반응 및 알케닐 작용성 오가노폴리실록산과 실리콘 결합된 수소 작용성 오가노폴리실록산과의 하이드로실릴화 반응 둘 다를 통해 경화되고, 성분(A') 및 성분(B')로부터 선택되는 하나 이상의 성분은 화학식 (1)의 실리콘 결하된 아크릴 작용성 그룹을 평균 2개 이상 갖는다].상기 화학식에서 (1)에서, R1및 R2는 수소원자 또는 1가 탄화수소 그룹이고, R3은 C1-C102가 탄화수소 그룹이다.
- 반도체 칩, 기판 및 반도체 칩을 기판에 결합시키는 제1항 또는 제2항의 실록산 조성물을 포함하는 반도체 장치.
- 반도체 칩을 제공하는 단계, 기판을 제공하는 단계, 제1항 또는 제2항에 따르는 실록산 조성물을 사용하여 반도체 칩을 기판에 결합시키는 단계, 조성물을 고에너지 복사에 노출시켜 아크릴 작용성 오가노폴리실록산의 아크릴 작용성 그룹의 유리 라디칼 반응을 유도하는 단계 및 조성물을 하이드로실릴화 반응시켜 경화시키는 단계를 포함하여, 반도체 장치를 제조하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12264096A JPH09286971A (ja) | 1996-04-19 | 1996-04-19 | シリコーン系ダイボンディング剤、半導体装置の製造方法および半導体装置 |
JP96-122640 | 1996-04-19 |
Publications (1)
Publication Number | Publication Date |
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KR970070156A true KR970070156A (ko) | 1997-11-07 |
Family
ID=14840979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019970014902A KR970070156A (ko) | 1996-04-19 | 1997-04-19 | 실리콘 다이 부착용 접착제, 반도체 장치의 제조방법 및 반도체 장치 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5982041A (ko) |
EP (1) | EP0802234B1 (ko) |
JP (1) | JPH09286971A (ko) |
KR (1) | KR970070156A (ko) |
DE (1) | DE69727723D1 (ko) |
MY (1) | MY132333A (ko) |
SG (1) | SG75809A1 (ko) |
TW (1) | TW374792B (ko) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5840598A (en) * | 1997-08-14 | 1998-11-24 | Micron Technology, Inc. | LOC semiconductor assembled with room temperature adhesive |
US6140445A (en) * | 1998-04-17 | 2000-10-31 | Crompton Corporation | Silane functional oligomer |
JP2000017031A (ja) * | 1998-06-29 | 2000-01-18 | Shin Etsu Chem Co Ltd | 放射線硬化型樹脂組成物 |
JP2000044688A (ja) * | 1998-07-31 | 2000-02-15 | Shin Etsu Chem Co Ltd | アクリル官能性オルガノポリシロキサン及び放射線硬化性組成物 |
US6369185B1 (en) * | 1999-03-31 | 2002-04-09 | Dow Corning Toray Silicone Co., Ltd. | Curable organopolysiloxane composition, cured products formed therefrom and unified articles |
US6424541B1 (en) * | 1999-04-21 | 2002-07-23 | Conexant Systems, Inc | Electronic device attachment methods and apparatus for forming an assembly |
TW526242B (en) * | 1999-11-17 | 2003-04-01 | Shinetsu Chemical Co | Titanium oxide-filled addition reaction-curable silicone rubber composition and its cured material |
DE10004410A1 (de) * | 2000-02-02 | 2001-08-16 | Infineon Technologies Ag | Halbleiterbauelement mit an der Unterseite befindlichen Kontakten und Verfahren zur Herstellung |
US6426552B1 (en) * | 2000-05-19 | 2002-07-30 | Micron Technology, Inc. | Methods employing hybrid adhesive materials to secure components of semiconductor device assemblies and packages to one another and assemblies and packages including components secured to one another with such hybrid adhesive materials |
US6784555B2 (en) * | 2001-09-17 | 2004-08-31 | Dow Corning Corporation | Die attach adhesives for semiconductor applications utilizing a polymeric base material with inorganic insulator particles of various sizes |
JP4185292B2 (ja) * | 2002-02-15 | 2008-11-26 | 信越化学工業株式会社 | 放射線硬化性シリコーンゴム組成物および接着性シリコーンエラストマーフィルム |
JP4726383B2 (ja) * | 2002-02-15 | 2011-07-20 | 信越化学工業株式会社 | 放射線硬化性シリコーンゴム組成物および接着性シリコーンエラストマーフィルム |
US6940177B2 (en) * | 2002-05-16 | 2005-09-06 | Dow Corning Corporation | Semiconductor package and method of preparing same |
US7176044B2 (en) * | 2002-11-25 | 2007-02-13 | Henkel Corporation | B-stageable die attach adhesives |
JP4185450B2 (ja) * | 2002-12-11 | 2008-11-26 | 信越化学工業株式会社 | 放射線硬化性シリコーンゴム組成物、該組成物からなる接着性シリコーンエラストマーフィルム、並びに該組成物を用いる構造体およびその製造方法 |
US20050038188A1 (en) | 2003-08-14 | 2005-02-17 | Dongchan Ahn | Silicones having improved chemical resistance and curable silicone compositions having improved migration resistance |
US7045586B2 (en) | 2003-08-14 | 2006-05-16 | Dow Corning Corporation | Adhesives having improved chemical resistance and curable silicone compositions for preparing the adhesives |
US7141452B2 (en) * | 2003-12-01 | 2006-11-28 | Intel Corporation | Methods of reducing bleed-out of underfill and adhesive materials |
US20060113683A1 (en) * | 2004-09-07 | 2006-06-01 | Nancy Dean | Doped alloys for electrical interconnects, methods of production and uses thereof |
US7394150B2 (en) * | 2004-11-23 | 2008-07-01 | Siliconix Incorporated | Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys |
US7238551B2 (en) * | 2004-11-23 | 2007-07-03 | Siliconix Incorporated | Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys |
JP4849814B2 (ja) * | 2005-03-29 | 2012-01-11 | 東レ・ダウコーニング株式会社 | ホットメルト型シリコーン系接着剤 |
EP1757979B1 (en) * | 2005-08-26 | 2012-12-12 | Cmet Inc. | Rapid prototyping resin compositions |
US8293810B2 (en) | 2005-08-29 | 2012-10-23 | Cmet Inc. | Rapid prototyping resin compositions |
US20070138442A1 (en) * | 2005-12-19 | 2007-06-21 | Weiser Martin W | Modified and doped solder alloys for electrical interconnects, methods of production and uses thereof |
JP4984573B2 (ja) * | 2006-02-28 | 2012-07-25 | 住友ベークライト株式会社 | ダイアタッチペースト及びダイアタッチペーストを使用して作製した半導体装置 |
WO2007129132A1 (en) * | 2006-05-10 | 2007-11-15 | Infineon Technologies Ag | Semiconductor package and method of assembling a semiconductor package |
US8614278B2 (en) * | 2006-06-06 | 2013-12-24 | Dow Corning Corporation | Silicone acrylate hybrid composition and method of making same |
US8569416B2 (en) | 2006-06-06 | 2013-10-29 | Dow Corning Corporation | Single phase silicone acrylate formulation |
JP5487536B2 (ja) * | 2007-07-02 | 2014-05-07 | バンドー化学株式会社 | ウレタン製のハス歯ベルト |
JP2009132749A (ja) * | 2007-11-28 | 2009-06-18 | Seiko Epson Corp | 接合方法および接合体 |
FR2926082B1 (fr) * | 2008-01-04 | 2010-01-15 | Nexans | Composition photoreticulable comprenant un polyorganosiloxane. |
JP4497218B2 (ja) | 2008-03-06 | 2010-07-07 | セイコーエプソン株式会社 | 接合方法および接合体 |
DE102008043316A1 (de) * | 2008-10-30 | 2010-05-06 | Wacker Chemie Ag | Verfahren zur Herstellung von Siliconformkörpern aus durch Licht vernetzbaren Siliconmischungen |
US9520314B2 (en) * | 2008-12-19 | 2016-12-13 | Applied Materials, Inc. | High temperature electrostatic chuck bonding adhesive |
DE102009002231A1 (de) * | 2009-04-06 | 2010-10-07 | Wacker Chemie Ag | Bei Raumtemperatur selbsthaftende Pt-katalysierte additions-vernetzende Siliconzusammensetzungen |
DE102009026682A1 (de) * | 2009-06-03 | 2010-12-09 | Robert Bosch Gmbh | Bauelement mit einer mikromechanischen Mikrofonstruktur und Verfahren zu dessen Herstellung |
JP5434772B2 (ja) * | 2010-04-27 | 2014-03-05 | セイコーエプソン株式会社 | 接合方法 |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
CN110072697B (zh) * | 2016-10-31 | 2022-05-03 | 陶氏东丽株式会社 | 层压体和电子组件制造方法 |
JP7067398B2 (ja) * | 2018-10-02 | 2022-05-16 | 信越化学工業株式会社 | 紫外線硬化型シリコーン接着剤組成物および積層体の製造方法 |
WO2021140862A1 (ja) * | 2020-01-10 | 2021-07-15 | 信越化学工業株式会社 | 硬化性組成物およびインクジェット用インク |
JP2023526745A (ja) * | 2020-05-07 | 2023-06-23 | ダウ シリコーンズ コーポレーション | シリコーンハイブリッド感圧接着剤、並びにその調製及び凸凹の表面における使用方法 |
TW202210558A (zh) * | 2020-09-01 | 2022-03-16 | 美商陶氏全球科技公司 | 增強基板黏著力的uv/水分雙重固化組合物 |
EP4217435B1 (en) | 2020-09-22 | 2024-09-11 | Dow Silicones Corporation | Methods for the preparation of a curable silicone-(meth)acrylate composition |
US20240158673A1 (en) * | 2021-03-05 | 2024-05-16 | Dow Toray Co., Ltd. | Co-modified organopolysiloxane and curable organopolysiloxane composition including same |
CN114752347A (zh) * | 2022-05-16 | 2022-07-15 | 江苏至昕新材料有限公司 | UV-Pt双固化体系有机硅液态光学透明胶及其制备方法和应用 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2940917A1 (de) * | 1979-10-09 | 1981-04-23 | Wacker-Chemie GmbH, 8000 München | Klebstoffe |
JPS62215658A (ja) * | 1986-03-17 | 1987-09-22 | Shin Etsu Chem Co Ltd | 光硬化性オルガノポリシロキサン組成物 |
JPH02163166A (ja) * | 1988-12-15 | 1990-06-22 | Toray Dow Corning Silicone Co Ltd | オルガノポリシロキサン系重合体の製造方法および放射線硬化性組成物 |
JP2882823B2 (ja) * | 1989-11-15 | 1999-04-12 | 東レ・ダウコーニング・シリコーン株式会社 | 接着剤 |
JP2974700B2 (ja) * | 1989-11-30 | 1999-11-10 | 東レ・ダウコーニング・シリコーン株式会社 | 導電性接着剤 |
US6376569B1 (en) * | 1990-12-13 | 2002-04-23 | 3M Innovative Properties Company | Hydrosilation reaction utilizing a (cyclopentadiene)(sigma-aliphatic) platinum complex and a free radical photoinitiator |
JP2819444B2 (ja) * | 1993-11-08 | 1998-10-30 | 東レ・ダウコーニング・シリコーン株式会社 | 導電性シリコーンゴム組成物 |
TW334469B (en) * | 1995-08-04 | 1998-06-21 | Doconitele Silicon Kk | Curable organosiloxane compositions and semiconductor devices |
US5789516A (en) * | 1997-04-07 | 1998-08-04 | Dow Corning Corporation | Method of making silicone-organic block copolymers |
-
1996
- 1996-04-19 JP JP12264096A patent/JPH09286971A/ja not_active Withdrawn
-
1997
- 1997-04-09 US US08/835,287 patent/US5982041A/en not_active Expired - Fee Related
- 1997-04-14 SG SG1997001196A patent/SG75809A1/en unknown
- 1997-04-17 EP EP19970302636 patent/EP0802234B1/en not_active Expired - Lifetime
- 1997-04-17 MY MYPI97001691A patent/MY132333A/en unknown
- 1997-04-17 DE DE69727723T patent/DE69727723D1/de not_active Expired - Lifetime
- 1997-04-17 TW TW086104987A patent/TW374792B/zh active
- 1997-04-19 KR KR1019970014902A patent/KR970070156A/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP0802234B1 (en) | 2004-02-25 |
SG75809A1 (en) | 2000-10-24 |
EP0802234A3 (en) | 1998-06-24 |
JPH09286971A (ja) | 1997-11-04 |
MY132333A (en) | 2007-10-31 |
EP0802234A2 (en) | 1997-10-22 |
US5982041A (en) | 1999-11-09 |
DE69727723D1 (de) | 2004-04-01 |
TW374792B (en) | 1999-11-21 |
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