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KR970067910A - 실리콘 온 인슐레이터(soi)구조를 갖는 입력/출력 보호회로 - Google Patents

실리콘 온 인슐레이터(soi)구조를 갖는 입력/출력 보호회로 Download PDF

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Publication number
KR970067910A
KR970067910A KR1019970000189A KR19970000189A KR970067910A KR 970067910 A KR970067910 A KR 970067910A KR 1019970000189 A KR1019970000189 A KR 1019970000189A KR 19970000189 A KR19970000189 A KR 19970000189A KR 970067910 A KR970067910 A KR 970067910A
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KR
South Korea
Prior art keywords
input
protection circuit
semiconductor film
output protection
insulating layer
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KR1019970000189A
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English (en)
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KR100294412B1 (ko
Inventor
야스오 야마구치
히로토시 사토
야스오 이노우에
토시아키 이와마츠
Original Assignee
키타오카 타카시
미쓰비시 덴키 가부시끼 가이샤
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Publication of KR970067910A publication Critical patent/KR970067910A/ko
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Publication of KR100294412B1 publication Critical patent/KR100294412B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Abstract

입력/출력 보호회로는 입력단자(30)와 전원선(32)과의 사이에 접속된 P 채널 MOS 트랜지스터(34)와 입력단자(30)와 접지선(33)과의 사이에 접속된 N 채널 MOS 트랜지스터(35)를 구비한다. 트랜지스터(34,35)의 게이트 전극(34a,35a)은 함께 플로팅 상태로 된다. 다른 실시예에서는 트랜지스터(34,35) 대신에 게이트 다이소드(38,39)가 사용된다. 또 다른 실시예에서는 게이트 전극(34f,f35)이 필드 실드용의 게이트 전극과 같은 층에 형성된다.

Description

실리콘 온 인슐레이터(SOI)구조를 갖는 입력/출력 보호회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도 3은 도 2의 Ⅲ-Ⅲ선에 따라 절단한 단면도.

Claims (3)

  1. 입력/출력단자(30)와 복수의 MOS트랜지스터(44,45)를 포함하는 내부회로(31)와의 사이에 접속되고 절연층(2)상에 형성되는 입력/출력보호회로에 있어서 상기 절연층상에 형성되고 상기 입력/출력단자와 제1 전원선(32)와의 사이에 접속된 제1 반도체막(3)과 상기 제1 반도체막상에 형성된 제1 게이트 절연막(34d,38d,34g)과 상기 제1 게이트 절연막상에 형성되고 플로팅 상태에 있는 제1 게이트 전극(34a,38a,34f)을 구비한 제1 MOS소자(34,38)를 포함하는 입력/출력보호회로.
  2. 입력/출력단자(30)와 복수의 MOS트랜지스터(44,45)를 포함하는 내부회로와의 사이에 접속되고 절연층상에 형성되는 입력/출력보호회로에 상기 복수의 MOS트랜지스터가 서로 필드 실드법에 의해 분리되어 있는 상기 입력/출력보호회로에 있어서 상기 절연층상에 형성되고 상기 입력/출력단자와 전원선(32,33)과의 사이에 접속된 반도체막(3)과 상기 반도체막상에 형성된 게이트 절연막(34g,35g)과 상기 게이트 절연막상에서상기 플드 실드법에 의한 분리용의 게이트 전극(16)과 동일한 층에 형성된 게이트 전극(34f,35f)을 구비한 MOS소자를 포함하는 입력/출력보호회로.
  3. 입력/출력단자(30)와 내부회로(31)와의 사이에 접속되고 절연층(2)상에 형성되는 입력/출력보호회로에 있어서 상기 절연층상에 형성된 제1 도전형의 반도체막(3)과 상기 반도체막내에 형성되고 상기 입력/출력단자에 접속된 제1도전형의 복수의 제1도전 영역(62,61)과 상기 반도체막내에 형성되고 전원선(32,33)에 접속된 제2도전형의 복수의 제2 도전 영역(61,62)을 포함하는 입력/출력보호회로.
KR1019970000189A 1996-03-29 1997-01-07 실리콘온인슐레이터(soi)구조를갖는입/출력보호회로 KR100294412B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9676305 1996-03-29
JP07630596A JP3717227B2 (ja) 1996-03-29 1996-03-29 入力／出力保護回路
JP96-76305 1996-03-29

Publications (2)

Publication Number Publication Date
KR970067910A true KR970067910A (ko) 1997-10-13
KR100294412B1 KR100294412B1 (ko) 2001-07-12

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KR1019970000189A KR100294412B1 (ko) 1996-03-29 1997-01-07 실리콘온인슐레이터(soi)구조를갖는입/출력보호회로

Country Status (6)

Country Link
US (1) US6118154A (ko)
JP (1) JP3717227B2 (ko)
KR (1) KR100294412B1 (ko)
DE (1) DE19651247C2 (ko)
FR (1) FR2746963B1 (ko)
TW (1) TW312052B (ko)

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Publication number Publication date
KR100294412B1 (ko) 2001-07-12
JPH09270492A (ja) 1997-10-14
FR2746963B1 (fr) 2001-01-05
TW312052B (en) 1997-08-01
JP3717227B2 (ja) 2005-11-16
DE19651247A1 (de) 1997-10-02
FR2746963A1 (fr) 1997-10-03
DE19651247C2 (de) 2002-01-10
US6118154A (en) 2000-09-12

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