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KR970043341A - 단결정인상장치 - Google Patents

단결정인상장치 Download PDF

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Publication number
KR970043341A
KR970043341A KR1019960067573A KR19960067573A KR970043341A KR 970043341 A KR970043341 A KR 970043341A KR 1019960067573 A KR1019960067573 A KR 1019960067573A KR 19960067573 A KR19960067573 A KR 19960067573A KR 970043341 A KR970043341 A KR 970043341A
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KR
South Korea
Prior art keywords
cable
seed crystal
holding
members
seed
Prior art date
Application number
KR1019960067573A
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English (en)
Other versions
KR100523342B1 (ko
Inventor
미즈이시 교우지
마에다 시게마루
Original Assignee
와다 다다시
신에쯔 한도타이 콤파니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 와다 다다시, 신에쯔 한도타이 콤파니 리미티드 filed Critical 와다 다다시
Publication of KR970043341A publication Critical patent/KR970043341A/ko
Application granted granted Critical
Publication of KR100523342B1 publication Critical patent/KR100523342B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

케이블을 이용하여 경정재료용액으로부터 단결정 잉고트를 인상하는 결정인상장치가 제공된다. 체결부 및 그 체결부에 의해 지지된 구성부가 케이블의 선단부근에 제공된다. 2개의 분할된 커를링이 시드쳐크(seed chuck)의 본체에 나합된다. 상기 커플링은 케이블과 구상부를 수납하기 위한 내부 수납공간을 갖고 수납공간의 숄더부로서의 역할을 하는 원추공부가 구상부를 접촉지지 한다. 이 구조는 결정인상동안 케이블이 회전할 수 있게 하고 시드쳐크를 케이블에 취부하기가 요이하며 케이블로부터 시드쳐크를 제거하는 것도 용이하다.

Description

단결정인상장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 종자결정을 보지하는 종자결정 보지구; 결정재료 용액위에서 상하이동가능하며 상기 종자결정 보지구에 연결되어 있으며, 상기 종자 결정이 상기 융액과 접촉되게 하방으로 이동된 후 상기 결정재료의 단결정을 성장하도록 인상되는 케이블; 상기 케이블의 선단 부근에서 케이블에 취부되며 그 회전대칭축이 상기 케이블의 중심선과 일치하는 회전 곡면을 갖는 취부부재; 및 복수의 부재로 이루어지고 상기 종자 결정 보지구에 탈착가능하게 취부되며, 상기 케이블과 상기 취부부재를 내부에 수납하도록 수납공간을 갖고, 그 수납공간의 숄더부가 상기 취부부재와 접촉. 보지하는 지지부재; 를 포함하는 단결정인상장치.
  2. 제1항에 있어서, 상기 취부부재는 상기 케이블의 선단부근에서 체결을 통해 상기 케이블에 고정되는 체결부 및 그 체결부를 통해 상기 케이블에 취부되는 구상부(球狀部)를 갖고, 상기 지지부재는 2개의 부재로 구성되며 상기 종자 결정 보지구의 상부에 나합(스크류 결합)을 통해 탈착 가능하게 취부되며 상기 수납공간의 숄더부는 원추형상(truncated cone)의 형상을 갖는 공간을 이룸을 특징으로 하는 장치.
  3. 제2항에 있어서 상기 종자 결정 보지구는 제1 및 제2부재로 구성되며, 상기제1부재는 상기 종자 결정을 보지하게 되어 있으며, 상기 제2부재는 나합(스크류 결합)을 통해 상기 제1부재의 상부면에 탈착가능하게 취부되며, 상기 지지부재는 나합을 통해 상기 제2부재의 상부면에 탈착가능하게 취부되어 있음을 특징으로 하는 장치.
KR1019960067573A 1995-12-25 1996-12-18 단결정인상장치 KR100523342B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35003895A JP3402038B2 (ja) 1995-12-25 1995-12-25 単結晶引上げ装置
JP350038/1995 1995-12-25

Publications (2)

Publication Number Publication Date
KR970043341A true KR970043341A (ko) 1997-07-26
KR100523342B1 KR100523342B1 (ko) 2006-02-01

Family

ID=18407815

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960067573A KR100523342B1 (ko) 1995-12-25 1996-12-18 단결정인상장치

Country Status (5)

Country Link
US (1) US5833750A (ko)
EP (1) EP0783047B1 (ko)
JP (1) JP3402038B2 (ko)
KR (1) KR100523342B1 (ko)
DE (1) DE69603149T2 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69802864T2 (de) * 1997-05-21 2002-08-29 Shin-Etsu Handotai Co., Ltd. Silizium-Impfkristall, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Silizium-Einkristalls unter Verwendung des Silizium-Impfkristalls
US6015461A (en) * 1997-09-12 2000-01-18 Sumitomo Sitix Corporation Seed crystal holders, for pulling a single crystal
DE19758833B4 (de) * 1997-09-12 2007-08-30 Sumitomo Metal Industries, Ltd. Impfkristallhalter
DE19740257B4 (de) * 1997-09-12 2006-01-26 Sumitomo Mitsubishi Silicon Corp. Impfkristallhalter
US6139632A (en) * 1997-09-15 2000-10-31 Sumitomo Sitix Corporation Seed crystals, seed crystal holders, and a method for pulling a single crystal
JPH11292686A (ja) * 1998-04-07 1999-10-26 Mitsubishi Materials Corp シードチャック
US6183556B1 (en) * 1998-10-06 2001-02-06 Seh-America, Inc. Insulating and warming shield for a seed crystal and seed chuck
US6203614B1 (en) * 1999-05-28 2001-03-20 Memc Electronic Materials, Inc. Cable assembly for crystal puller
US6238483B1 (en) 1999-08-31 2001-05-29 Memc Electronic Materials, Inc. Apparatus for supporting a semiconductor ingot during growth
US6835247B2 (en) * 2000-10-31 2004-12-28 Advanced Silicon Materials Llc Rod replenishment system for use in single crystal silicon production
JP4135405B2 (ja) * 2002-06-12 2008-08-20 信越半導体株式会社 種結晶保持治具及び単結晶の製造方法
JP4683184B2 (ja) * 2004-11-04 2011-05-11 信越半導体株式会社 単結晶引上げ装置のシードチャック
JP4626291B2 (ja) * 2004-12-15 2011-02-02 信越半導体株式会社 単結晶引上げ装置
KR101203969B1 (ko) * 2010-01-29 2012-11-22 주식회사 코원이노텍 실리콘 단결정 잉곳 형성장치
KR101211613B1 (ko) 2010-12-30 2012-12-12 웅진에너지 주식회사 시드척 유닛 및 이를 이용한 잉곳 성장 장치
JP5682821B2 (ja) * 2011-03-15 2015-03-11 株式会社Sumco シード軸とシードホルダとの連結構造及び単結晶インゴットの製造方法
CN104471117B (zh) * 2012-07-19 2016-10-05 新日铁住金株式会社 SiC单晶体的制造装置和SiC单晶体的制造方法
CN103484932B (zh) * 2013-09-13 2016-02-17 沃德盛光伏科技（苏州）有限公司 一种单晶晶体双重防护重锤装置
CN107779947A (zh) * 2017-11-28 2018-03-09 浙江晶盛机电股份有限公司 一种单晶炉籽晶夹头结构

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DE3414290A1 (de) * 1984-04-14 1985-10-24 Leybold-Heraeus GmbH, 5000 Köln Kristallhalter
JPS6364992A (ja) * 1986-09-08 1988-03-23 Fujitsu Ltd 単結晶成長装置
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JPH0489558U (ko) * 1990-11-20 1992-08-05

Also Published As

Publication number Publication date
JPH09175894A (ja) 1997-07-08
EP0783047A1 (en) 1997-07-09
DE69603149T2 (de) 1999-12-30
KR100523342B1 (ko) 2006-02-01
JP3402038B2 (ja) 2003-04-28
DE69603149D1 (de) 1999-08-12
US5833750A (en) 1998-11-10
EP0783047B1 (en) 1999-07-07

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