KR100523342B1 - 단결정인상장치 - Google Patents
단결정인상장치 Download PDFInfo
- Publication number
- KR100523342B1 KR100523342B1 KR1019960067573A KR19960067573A KR100523342B1 KR 100523342 B1 KR100523342 B1 KR 100523342B1 KR 1019960067573 A KR1019960067573 A KR 1019960067573A KR 19960067573 A KR19960067573 A KR 19960067573A KR 100523342 B1 KR100523342 B1 KR 100523342B1
- Authority
- KR
- South Korea
- Prior art keywords
- cable
- seed
- single crystal
- seed crystal
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
- 종자결정을 지지하는 종자결정 지지구;결정재료 융액위에서 상하이동가능하며 상기 종자결정 지지구에 연결되어 있으며, 상기 종자 결정이 상기 융액과 접촉되게 하방으로 이동된후 상기 결정재료의 단결정을 성장하도록 인상되는 케이블;상기 케이블의 선단 부근에서 케이블에 취부되며 그 회전대칭축이 상기 케이블의 중심선과 일치하는 회전 곡면을 갖는 취부부재; 및복수의 부재로 이루어지고 상기 종자 결정 지지구에 탈착가능하게 취부되며, 상기 케이블과 상기 취부 부재를 내부에 수납하도록 수납공간을 갖고, 그 수납공간의 숄더부(shoulder portion)가 상기 취부부재와 접촉.지지하는 지지부재;를 포함하는 단결정인상장치
- 제1항에 있어서, 상기 취부부재는 상기 케이블의 선단부근에서 체결을 통해 상기 케이블에 고정되는 체결부 및 그 체결부를 통해 상기 케이블에 취부되는 구상부(球狀部)를 갖고,상기 지지부재는 2개의 부재로 구성되며 상기 종자 결정 지지구의 상부에 나사결합을 통해 탈착가능하게 취부되며,상기 수납공간의 숄더부는 원추형상(truncated cone)의 형상을 갖는 공간을 이룸,을 특징으로 하는 단결정인상장치
- 제2항에 있어서, 상기 종자 결정 지지구는 제1 및 제2 부재로 구성되며, 상기 제1 부재는 상기 종자 결정을 지지하게 되어 있으며, 상기 제2 부재는 나사결합을 통해 상기 제1 부재의 상부면에 탈착가능하게 취부되며, 상기 지지부재는 나사결합을 통해 상기 제2 부재의 상부면에 탈착가능하게 취부되어 있음을 특징으로 하는 단결정인상장치
- 제 1항 내지 제 3항 중 어느 한 항에 있어서, 상기 지지부재는 2분할된 커플링인 것을 특징으로 하는 단결정인상장치
- 제 4항에 있어서, 상기 커플링의 상부에 캡을 끼워 커플링의 상부를 고정시키는 것을 특징으로 하는 단결정인상장치
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP350038/1995 | 1995-12-25 | ||
JP35003895A JP3402038B2 (ja) | 1995-12-25 | 1995-12-25 | 単結晶引上げ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970043341A KR970043341A (ko) | 1997-07-26 |
KR100523342B1 true KR100523342B1 (ko) | 2006-02-01 |
Family
ID=18407815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960067573A Expired - Lifetime KR100523342B1 (ko) | 1995-12-25 | 1996-12-18 | 단결정인상장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5833750A (ko) |
EP (1) | EP0783047B1 (ko) |
JP (1) | JP3402038B2 (ko) |
KR (1) | KR100523342B1 (ko) |
DE (1) | DE69603149T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101203969B1 (ko) * | 2010-01-29 | 2012-11-22 | 주식회사 코원이노텍 | 실리콘 단결정 잉곳 형성장치 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69802864T2 (de) * | 1997-05-21 | 2002-08-29 | Shin-Etsu Handotai Co., Ltd. | Silizium-Impfkristall, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Silizium-Einkristalls unter Verwendung des Silizium-Impfkristalls |
DE19740257B4 (de) * | 1997-09-12 | 2006-01-26 | Sumitomo Mitsubishi Silicon Corp. | Impfkristallhalter |
US6015461A (en) * | 1997-09-12 | 2000-01-18 | Sumitomo Sitix Corporation | Seed crystal holders, for pulling a single crystal |
DE19758833B4 (de) * | 1997-09-12 | 2007-08-30 | Sumitomo Metal Industries, Ltd. | Impfkristallhalter |
US6139632A (en) * | 1997-09-15 | 2000-10-31 | Sumitomo Sitix Corporation | Seed crystals, seed crystal holders, and a method for pulling a single crystal |
JPH11292686A (ja) * | 1998-04-07 | 1999-10-26 | Mitsubishi Materials Corp | シードチャック |
US6183556B1 (en) * | 1998-10-06 | 2001-02-06 | Seh-America, Inc. | Insulating and warming shield for a seed crystal and seed chuck |
US6203614B1 (en) * | 1999-05-28 | 2001-03-20 | Memc Electronic Materials, Inc. | Cable assembly for crystal puller |
US6238483B1 (en) | 1999-08-31 | 2001-05-29 | Memc Electronic Materials, Inc. | Apparatus for supporting a semiconductor ingot during growth |
US6835247B2 (en) * | 2000-10-31 | 2004-12-28 | Advanced Silicon Materials Llc | Rod replenishment system for use in single crystal silicon production |
JP4135405B2 (ja) * | 2002-06-12 | 2008-08-20 | 信越半導体株式会社 | 種結晶保持治具及び単結晶の製造方法 |
JP4683184B2 (ja) * | 2004-11-04 | 2011-05-11 | 信越半導体株式会社 | 単結晶引上げ装置のシードチャック |
JP4626291B2 (ja) * | 2004-12-15 | 2011-02-02 | 信越半導体株式会社 | 単結晶引上げ装置 |
KR101211613B1 (ko) | 2010-12-30 | 2012-12-12 | 웅진에너지 주식회사 | 시드척 유닛 및 이를 이용한 잉곳 성장 장치 |
JP5682821B2 (ja) * | 2011-03-15 | 2015-03-11 | 株式会社Sumco | シード軸とシードホルダとの連結構造及び単結晶インゴットの製造方法 |
KR101657018B1 (ko) * | 2012-07-19 | 2016-09-12 | 신닛테츠스미킨 카부시키카이샤 | SiC 단결정의 제조 장치 및 SiC 단결정의 제조 방법 |
CN103484932B (zh) * | 2013-09-13 | 2016-02-17 | 沃德盛光伏科技(苏州)有限公司 | 一种单晶晶体双重防护重锤装置 |
CN107779947A (zh) * | 2017-11-28 | 2018-03-09 | 浙江晶盛机电股份有限公司 | 一种单晶炉籽晶夹头结构 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03103389A (ja) * | 1989-09-14 | 1991-04-30 | Toshiba Ceramics Co Ltd | 半導体単結晶引上用玉鎖 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3206286A (en) * | 1959-07-23 | 1965-09-14 | Westinghouse Electric Corp | Apparatus for growing crystals |
DE1114171B (de) * | 1959-12-31 | 1961-09-28 | Siemens Ag | Halterung fuer stabfoermiges Halbleitermaterial in Vorrichtungen zum tiegelfreien Zonenschmelzen |
US3159408A (en) * | 1961-10-05 | 1964-12-01 | Grace W R & Co | Chuck |
JPS4739477Y1 (ko) * | 1967-07-17 | 1972-11-29 | ||
US4284605A (en) * | 1980-05-14 | 1981-08-18 | Ferrofluidics Corporation | Linear drive shaft seal |
DE3414290A1 (de) * | 1984-04-14 | 1985-10-24 | Leybold-Heraeus GmbH, 5000 Köln | Kristallhalter |
JPS6364992A (ja) * | 1986-09-08 | 1988-03-23 | Fujitsu Ltd | 単結晶成長装置 |
JPS63206382A (ja) * | 1987-02-20 | 1988-08-25 | Fujitsu Ltd | 結晶引き上げ装置 |
JPH04182381A (ja) * | 1990-11-15 | 1992-06-29 | Toshiba Ceramics Co Ltd | 結晶引上げ用シードチャック |
JPH0489558U (ko) * | 1990-11-20 | 1992-08-05 |
-
1995
- 1995-12-25 JP JP35003895A patent/JP3402038B2/ja not_active Expired - Lifetime
-
1996
- 1996-12-05 US US08/760,984 patent/US5833750A/en not_active Expired - Lifetime
- 1996-12-13 EP EP96309097A patent/EP0783047B1/en not_active Expired - Lifetime
- 1996-12-13 DE DE69603149T patent/DE69603149T2/de not_active Expired - Lifetime
- 1996-12-18 KR KR1019960067573A patent/KR100523342B1/ko not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03103389A (ja) * | 1989-09-14 | 1991-04-30 | Toshiba Ceramics Co Ltd | 半導体単結晶引上用玉鎖 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101203969B1 (ko) * | 2010-01-29 | 2012-11-22 | 주식회사 코원이노텍 | 실리콘 단결정 잉곳 형성장치 |
Also Published As
Publication number | Publication date |
---|---|
KR970043341A (ko) | 1997-07-26 |
DE69603149D1 (de) | 1999-08-12 |
DE69603149T2 (de) | 1999-12-30 |
US5833750A (en) | 1998-11-10 |
JP3402038B2 (ja) | 2003-04-28 |
JPH09175894A (ja) | 1997-07-08 |
EP0783047A1 (en) | 1997-07-09 |
EP0783047B1 (en) | 1999-07-07 |
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